1N5400 - 1N5408
Features
•
3.0 ampere operation at TA = 75°C
with no thermal runaway.
• High current capability.
• Low leakage.
General Purpose Rectifiers
DO-201AD
COLOR BAND DENOTES CATHODE
1N5400-1N5408
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
Maximum Repetitive Reverse
RRM
Voltage
I
Average Rectified Forward Current,
F(AV)
I
Non-repetitive Peak Forward Surge
FSM
T
stg
TJ Operating Junction Temperature -55 to +150
.375 " lead length @ T
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -55 to +150
= 75°C
A
5400 5401 5402 5403 5404 5405 5406 5407 5408
50 100 200 300 400 500 600 800 1000 V
3.0 A
200
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 6.25 W
R
Thermal Resistance, Junction to Ambient 20
JA
.
Electrical Characteristics T
Symbol Parameter Device Units
VF Forward Voltage @ 3.0 A 1.2 V
Irr Maximum Full Load Reverse
Current, Full Cycle T
IR
CT Toatal Capacitance
Reverse Current @ rated V
TA = 25°C
T
= 100°C
A
V
= 4.0 V, f = 1.0 MHz
R
Parameter
= 105°C
A
R
Value
= 25°C unless otherwise noted
A
5400 5401 5402 5403 5404 5405 5406 5407 5408
0.5
5.0
500
30 pF
Units
C/W
°
mA
A
u
A
u
. 2001 Fairchild Semiconductor Corporation 1N5400-1N5408, Rev C1, June 2006
T ypical Characteristics
1N5400-1N5408
General Purpose Rectifiers
(continued)
4
[A]
F
3
9.5mm LEAD LENGTH
2
1
0
25 50 75 100 125 150 175 200
Average Rectified Forward Current, I
Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
200
[A]
FSM
160
120
80
40
0
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
º
T = 105 C
A
100
10
[A]
F
5
1
0.1
Forward Current, I
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage, VF [V]
Pulse Width = 200
º
T = 25 C
J
1% Duty Cycl e
∝∝∝∝
S
Figure 2. Forward Voltage Characteristics
100
10
[uA]
R
T = 25 C
º
1
Reverse Current, I
0.1
0 20406080100120140
Percent of Rated Peak Reverse Voltage [%]
A
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
100
50
[pF]
T
10
5
Total Capacitance, C
1
0.1 1 5 10 50 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
. 2001 Fairchild Semiconductor Corporation 1N5400-1N5408, Rev C1, June 2006
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Definition of Terms
Datasheet Identif ica tion Product Stat us Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
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supplementary data will be published at a later date.
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Rev. I19
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