TEMIC U2893B Technical data
查询U2893B供应商
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2893B is a monolithic integrated circuit. It is
realized using TEMIC’s advanced silicon bipolar UHF5S
technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two
synchronous-programmable dividers, and a charge pump.
The U2893B is designed for cellular phones such as GSM,
DCS1800, and PCS1900, applying a transmitter-archi-
tecture where the VCO is operated at the TX output
frequency.
U2893B exhibits low power consumption, and the powerdown function extends battery life.
The IC is available in a shrinked small-outline 28–pin
package (SSO28).
U2893B
Features
D
Supply voltage down to 2.7 V
D
Current consumption 40 mA
D
Power-down function
D
Low-current standby mode
D
High-speed PFD and charge pump
D
Integrated dividers
Block Diagram
MDO
NMDO
+
MDLO
I
NI
90
grd
I/Q modulator
NQ PU
Q
Benefits
D
High-level RF integration
D
TX architecture saves filter costs
D
Low external part count
D
Small SSO28 package
D
One device for various applications
PUMIX
MIXO
Voltage
reference
Mixer
MIXLO
RF
NRF
ND
NND
RD
NRD
MC
TELEFUNKEN Semiconductors
Rev . A1, 29-Jan-97
N : 1
divider
R : 1
divider
Mode
control
MUX
PFD
GND
Figure 1. Block diagram
CPC
GNDP
Preliminary Information
VSP
CPO
VS1
VS2
VS3
12494
1 (14)
U2893B
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
ББББББББББ
Pin Description
NI
MDLO
GND
MDO
NMDO
VS1
VSP
CPO
GNDP
CPC
PUMIX
RD
NRD
Pin Symbol Function
1
I
2
3
4
5
6
7
8
9
10
11
12
13
14
12495
Figure 2. Pinning
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Q
NQ
VS3
MIXO
GND
NRF
RF
VS2
MIXLO
PU
GND
NND
ND
MC
1
2
3
4
5
6
7
8
9
10
I
NI
MDLO
GND
MDO
NMDO
VS1
VSP
CPO
GNDP
CPC
Á11ÁÁÁ
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
1)
PUMIX
RD
NRD
MC
ND
NND
GND
PU
MIXLO
VS2
RF
NRF
GND
MIXO
VS3
NQ
Q
All GND pins must be connected to GND
In-phase baseband input
Complementary to I
I/Q-modulator LO input
1)
Negative supply
I/Q-modulator output
Complementary to MDO
3)
Positive supply (I/Q MOD)
Pos. supply charge-pump
Charge-pump output
2)
Neg. supply charge pump
Charge-pump current control
(input)
БББББББББ
Power-up, mixer only
R-divider input
Complementary to RD
Mode control
N-divider input
Complementary to ND
1)
Negative supply
Power-up, whole chip except
mixer
Mixer LO input
3)
Positive supply (MISC.)
Mixer RF-input
Complementary to RF
1)
Negative supply
Mixer output
3)
Positive supply (mixer)
Complementary to Q
Quad.-phase baseband input
potential. No DC voltage between GND pins!
2)
3)
Max. voltage between GNDP and GND pins
v
200 mV
The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is 200 mV.
2 (14)
TELEFUNKEN Semiconductors
Rev . A1, 29-Jan-76
Preliminary Information
Absolute Maximum Ratings
Á
Á
Á
Á
ÁÁÁ
Á
Á
Á
ÁÁÁ
Á
Á
ÁÁÁ
pp y
VS1
ÁÁÁ
ÁÁÁ
pp y
VS2
ÁÁÁ
ÁÁÁ
pp y
VS3
ÁÁÁ
Á
Á
Á
Á
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
Parameters Symbol Value Unit
Supply voltage VS1, VS2, VS3
Supply voltage charge pump VSP
Voltage at any input
Current at any input / output pin
ББББББББББ
except CPC
CPC output currents
Ambient temperature
Storage temperature
Operating Range
Parameters Symbol Value Unit
Supply voltage
Ambient temperature
Thermal Resistance
V
VS#
V
VSP
V
Vi#
| II# | | IO# |
БББББББ
| I
|
CPC
T
amb
T
stg
V
, V
VS#
VSP
T
amb
U2893B
v
V
VSP
5.5
–0.5 v V
БББББББ
+0.5 v 5.5
VS
2
5
–20 to +85
–40 to +125
2.7 to 5.5
–20 to +85
V
V
V
mA
ÁÁ
mA
°C
°C
V
°C
Parameters Symbol Value Unit
Junction ambient SSO28
R
thJA
Electrical Characteristics: General Data
T
= 25°C, VS = 2.7 to 5.5 V
amb
Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit
DC supply
Supply voltages VS#
Supply voltage VSP
ББББББ
Supply current I
Supply current I
Supply current I
Supply current I
ББББББ
VS1
VS2
VS3
VSP
1)
N & R divider inputs ND, NND & RD, NRD
N:1 divider frequency
R:1 divider frequency
Input impedance
Input sensitivity
V
= V
VS1
БББББББÁÁÁÁÁ
VS2
= V
VS3
Active (VPU = VS)
Standby (VPU = 0)
Active (VPU = VS)
Standby (VPU = 0)
Active (V
Standby (V
PUMIX
PUMIX
= VS)
= 0)
Active
БББББББ
= VS, CPO open)
(V
PU
Standby (VPU = 0)
50-W source
50-W source
Active & standby
50-W source
V
VS#
V
VSP
I
VS1A
I
VS1Y
I
VS2A
I
VS2Y
I
VS3A
I
VS3Y
I
VSPA
ÁÁÁÁ
I
VSPY
F
ND
F
RD
ZRD, Z
ND
V
, V
RDeff
NDeff
2.7
V
VS#
ÁÁ
– 0.3
ÁÁ
100
100
1 kΩ
30
130
5.5
5.5
ÁÁÁÁÁ
16
20
21
20
11
30
2)
ÁÁ
20
ÁÁ
20
650
400
2 pF
200
K/W
V
V
ÁÁ
mA
m
A
mA
m
A
mA
m
A
mA
ÁÁ
m
A
MHz
MHz
–
mV
1) 100-MHz PFD operation, pump current set to 4 mA, zero phase difference (steady state)
2)
See chapter “Supply Current of the Charge Pump i(VSP) vs. Time”, page 6.
TELEFUNKEN Semiconductors
Rev . A1, 29-Jan-97
Preliminary Information
3 (14)
U2893B
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Á
Electrical Characteristics: General Data (continued)
T
= 25°C, VS = 2.7 to 5.5 V
amb
Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit
Phase-frequency detector (PFD)
PFD operation
ББББББ
Frequency comparison
ББББББ
only
I/Q modulator baseband inputs I, NI & Q, NQ
DC voltage
ББББББ
MD_IQ
AC voltage
ББББББ
3)
I/Q modulator LO input MDLO
MDLO
Input impedance
Input level
I/Q modulator outputs MDO, NMDO
DC current
Voltage compliance
MDO output level
ББББББ
(differential)
Carrier suppression
Sideband suppression
IF spurious
Noise
4)
4)
Frequency range
Mixer (900 MHz)
RF input level
LO-spurious at
RF/NRF port
MIXLO input level
MIXO (100-W load)
... Output level
5)
... Carrier suppression
FND = 650 MHz, n = 5
= 300 MHz, r = 2
F
RD
ББББББ
FND = 650 MHz, n = 5
ББББББ
= 300 MHz, r = 2
F
RD
Referred to GND
ББББББ
Frequency range
Referred to GND
ББББББ
Differential (preferres)
Frequency range
Active & standby
50-W source
V
MDO
V
MDO
500 W to VS
ББББББ
4)
4)
f_LO +/– 3 f_mod
@ 400 kHz off carrier
900 MHz
@ P9
MIXLO
@ P9
RF
0.05 to 2 GHz
Frequency range
@ P9
MIXLO
@ P9
MIXLO
, V
NMDO
, V
NMDO
4)
= –10 dBm
= –15 dBm
= –15 dBm
= –15 dBm
= VS
= VC
FM
PFD
БББББ
FM
V
I,
AC
AC
AC
I
MDO
MDO
P9
P9
CS9
FD
V
NI,
FR
IO
AC
I,
Q, ACNQ
AC
DI,
F
MDLO
Z
MDLO
P
MDLO
, I
NMDO
, VC
P
MDOeff
CS
MDO
SS
MDO
SP
MDO
N
MDO
FR
MDO
P9
RF
SP9
RF
MIXLO
FR
MIXO
MIXOeff
MIXO
Q,
NI,
DQ
NMDO
V
NQ
БББББ
V
БББББ
БББББ
VC
БББББ
150
Á
ÁÁ
200
Á
ÁÁÁÁÁÁÁÁ
1.35
Á
VS1/2
ÁÁ
DC
ÁÁÁÁ
200
400
50
250
–12
2.4
120
Á
ÁÁÁÁÁ
–30
–35
–45
–35
–40
–50
–115
50
tbd
tbd
–15
–10
50
70
–20
MHz
ÁÁ
ÁÁ
MHz
VS1/2
+ 0.1
ÁÁ
1
ÁÁÁÁÁ
V
ÁÁ
MHz
mVpp
mVpp
350
MHz
W
–5
dBm
mA
150
mV
ÁÁ
dBc
dBc
dBc
dBc/Hz
350
MHz
dBm
–40
dBm
dBm
350
MHz
mV
dBc
3)
4)
5)
4 (14)
Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity degrading
suppression of odd harmonics
With typical drive levels at MDLO- & I/Q-inputs
–1 dB compression point (CP-1)
TELEFUNKEN Semiconductors
Rev . A1, 29-Jan-76
Preliminary Information
Electrical Characteristics: General Data (continued)
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
pp
ÁÁÁ
ÁÁÁ
Á
Á
Á
Á
Á
Á
Á
Á
ÁÁÁ
Á
Á
Á
Á
Á
Á
Á
Á
Á
ÁÁÁ
Á
Á
ÁÁÁ
ÁÁÁ
ÁÁÁ
Á
Á
Á
Á
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
Á
Á
Á
Á
Á
Á
Á
Á
ÁÁÁ
Á
Á
Á
Á
Á
Á
ÁÁÁ
ÁÁÁ
ÁÁÁ
Á
Á
Á
Á
ÁÁÁ
Á
Á
T
= 25°C, VS = 2.7 to 5.5 V
amb
Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit
Mixer (1900 MHz)
RF input level
LO-spurious at
RF/NRF ports
MIXLO input level
MIXO (100 W load)
... Output level
5)
... Carrier suppression
Charge pump output CPO
Pump current pulse
TK pump current
Mismatch source / sink
ББББББ
current
ББББББ
Sensivity to VSP
ББББББ
Charge pump control input CPC
Compensation capacitor
Short circuit current
Mode control
Sink current
Power-up input PU (power-up for all functions, except mixer)
Settling time
ББББББ
High level
Low level
High-level current
Low-level current
Power-up input PUMIX (power-up for mixer only)
Settling time
ББББББ
ББББББ
High level
Low level
High-level current
Low-level current
ББББББ
0.5 to 2 GHz
@ P19
MIXLO
@ P19
= –15 dBm
RF
0.05 to 2 GHz
@ P19
MIXLO
@ P19
MIXLO
CPC open
2.23 kΩ CPC to GND
760 Ω CPC to GND
(I
– I
CPOSI
БББББББ
I
CPOSO
I
БББББББ
CPOSI
D
|
I
6)
CPC grounded
CPOSO
= I
sourc
= I
sink
I
CPO
||
CPO
VMC = VS
Output power within
10% of steady state
БББББББ
values
Active
Standby
Active, V
PUH
Standby, V
Output power within
БББББББ
10% of steady state
БББББББ
values
Active
Standby
Active, V
Standby ,
БББББББ
V
PUMIXL
PUMIXH
= 0.4 V
= –10 dBm
= –17 dBm
= –17 dBm
)/I
D
VSP
= 2.7 V
= 0.4 V
PUL
= 2.7 V
CPOSI
VSP
ÁÁÁÁ
ÁÁÁÁ
|
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
P19
SP19
P19
P19
CS19
| I
| I
CPO 2
| I
CPO_4
Tk_| I
M
S
C
| I
CPCK
I
S
V
V
I
I
V
PUMIXH
V
PUMIXL
I
PUMIXH
I
PUMIXL
RF
RF
MIXLO
MIXO
MIXO
|
CPO
|
CPC
ICPO
ICPO
CPC
|
MC
PU
PUH
PUL
PUH
PUL
|
|
–20
0.8
1.6
3.6
ÁÁ
ÁÁ
ÁÁ
500
2
ÁÁ
2.5
0
0.1
–10
ÁÁ
ÁÁ
2.5
0
0.1
–10
ÁÁ
U2893B
–17
–40
–8
55
1
2
4
ÁÁ
ÁÁ
ÁÁÁÁÁ
2.7
20
5
ÁÁ
5
ÁÁ
ÁÁ
ÁÁÁÁÁ
1.2
2.4
4.4
15
10
ÁÁ
ÁÁ
0.1
3.7
10
ÁÁ
0.4
0.6
0
10
ÁÁ
ÁÁ
0.4
0.6
0
dBm
dBm
dBm
mVeff
dBc
mA
mA
mA
%/100 k
%
ÁÁ
ÁÁ
–
ÁÁ
pF
mA
m
A
m
s
ÁÁ
V
V
mA
mA
m
s
ÁÁ
ÁÁ
V
V
mA
mA
ÁÁ
6)
See figures 6 and 14.
TELEFUNKEN Semiconductors
Rev . A1, 29-Jan-97
5 (14)
Preliminary Information
Loading...