TEMIC BZT55C. User Manual

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TELEFUNKEN Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

 Very sharp reverse characteristic
 Low reverse current level
 Very high stability
 Low noise
 Available with tighter tolerances

BZT55C...

Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation R
Z–current I
Junction temperature T
Storage temperature range T

300K/W P

thJA

Maximum Thermal Resistance

Tj = 25C

Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R

V
Z

j

stg

thJA

94 9373

500 mW

PV/V

Z

175 C

–65...+175 C

500 K/W

mA

Characteristics

Tj = 25C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=200mA V

Rev . A1: 12.12.1994

F

1.5 V

1

BZT55C...

TELEFUNKEN Semiconductors

Type V

ZnormIZT

for VZT

1)

and r

zjT

r

zjk

at I

ZK

I

R

and I

2)

at V

R

R

TK

BZT55C... V mA V   mA A A V %/K

2 V 4 2.4 5 2.28 to 2.56 < 85 < 600 1 < 100 < 50 1 –0.09 to –0.06
2 V 7 2.7 5 2.5 to 2.9 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3 V 0 3.0 5 2.8 to 3.2 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05
3 V 3 3.3 5 3.1 to 3.5 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3 V 6 3.6 5 3.4 to 3.8 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3 V 9 3.9 5 3.7 to 4.1 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
4 V 3 4.3 5 4.0 to 4.6 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03
4 V 7 4.7 5 4.4 to 5.0 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5 V 1 5.1 5 4.8 to 5.4 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5 V 6 5.6 5 5.2 to 6.0 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0,05
6 V 2 6.2 5 5.8 to 6.6 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6 V 8 6.8 5 6.4 to 7.2 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7 V 5 7.5 5 7.0 to 7.9 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8 V 2 8.2 5 7.7 to 8.7 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9 V 1 9.1 5 8.5 to 9.6 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09

10 10 5 9.4 to 10.6 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.4 to 11.6 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.4 to 12.7 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.4 to 14.1 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 13.8 to 15.6 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.11
16 16 5 15.3 to 17.1 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 16.8 to 19.1 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 18.8 to 21.2 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 20.8 to 23.3 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 22.8 to 25.6 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0.12
27 27 5 25.1 to 28.9 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 28 to 32 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 31 to 35 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 34 to 38 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 37 to 41 < 90 < 500 1 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12

1)

tp/T ≤ 100 ms, tighter tolerances available on request.

2)

at Tj = 150°C

VZ

2

Rev . A1: 12.12.1994

TELEFUNKEN Semiconductors

)

)

Typical Characteristics (Tj = 25C unless otherwise specified)

BZT55C...

600

500

400

300

200

100

tot

P – Total Power Dissipation ( mW )

0

200

95 9602

0 40 80 120 160

T

– Ambient Temperature ( °C

Figure 1 : Total Power Dissipation vs. Ambient Temperature

1.3

1.2

1.1

1.0

Ztn

0.9

V – Relative Voltage Change

V

Ztn=VZt/VZ

(25°C)

TKVZ=10 10–4/K

8 10–4/K

–4

6 10
4 10–4/K

–4

2 10

0

–2 10

–4 10

/K

/K

–4

/K

–4

/K

1000

Tj=25°C

100

IZ=5mA

10

Z

V – Voltage Change ( mV )



1

25

95 9598

0 5 10 15 20

V

– Z-Voltage ( V

Figure 2 : Typical Change of Working Voltage under Operating

Conditions at T

15

–4

Z

amb

=25C

10

5

IZ=5mA

0

0.8
–60 0 60 120 180

95 9599

Tj – Junction Temperature ( °C )

Figure 3 : Typical Change of Working Voltage vs. Junction

Temperature

200

150

VR=2V

Tj=25°C

100

50

D

C – Diode Capacitance ( pF )

0

95 9601

0 5 10 15

VZ – Z-Voltage ( V )

20

Figure 5 : Diode Capacitance vs. Z–Voltage

Rev . A1: 12.12.1994

240

25

VZ

–5

TK – Temperature Coefficient of V ( 10 /K )

95 9600

0102030

VZ – Z-Voltage ( V )

40

Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage

100

10

Tj=25°C

1

0.1

F

I – Forward Current ( mA )

0.01

0.001
0 0.2 0.4 0.6 0.8

95 9605

VF – Forward Voltage ( V )

Figure 6 : Forward Current vs. Forward Voltage

50

1.0

3