TEMIC BZT55C. User Manual

查询BZT55C10供应商

TELEFUNKEN Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

 Very sharp reverse characteristic
 Low reverse current level
 Very high stability
 Low noise
 Available with tighter tolerances

BZT55C...

Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation R
Z–current I
Junction temperature T
Storage temperature range T

300K/W P

thJA

Maximum Thermal Resistance

Tj = 25C

Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R

V
Z

j

stg

thJA

94 9373

500 mW

PV/V

Z

175 C

–65...+175 C

500 K/W

mA

Characteristics

Tj = 25C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=200mA V

Rev . A1: 12.12.1994

F

1.5 V

1

BZT55C...

TELEFUNKEN Semiconductors

Type V

ZnormIZT

for VZT

1)

and r

zjT

r

zjk

at I

ZK

I

R

and I

2)

at V

R

R

TK

BZT55C... V mA V   mA A A V %/K

2 V 4 2.4 5 2.28 to 2.56 < 85 < 600 1 < 100 < 50 1 –0.09 to –0.06
2 V 7 2.7 5 2.5 to 2.9 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3 V 0 3.0 5 2.8 to 3.2 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05
3 V 3 3.3 5 3.1 to 3.5 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3 V 6 3.6 5 3.4 to 3.8 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3 V 9 3.9 5 3.7 to 4.1 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
4 V 3 4.3 5 4.0 to 4.6 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03
4 V 7 4.7 5 4.4 to 5.0 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5 V 1 5.1 5 4.8 to 5.4 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5 V 6 5.6 5 5.2 to 6.0 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0,05
6 V 2 6.2 5 5.8 to 6.6 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6 V 8 6.8 5 6.4 to 7.2 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7 V 5 7.5 5 7.0 to 7.9 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8 V 2 8.2 5 7.7 to 8.7 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9 V 1 9.1 5 8.5 to 9.6 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09

10 10 5 9.4 to 10.6 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.4 to 11.6 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.4 to 12.7 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.4 to 14.1 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 13.8 to 15.6 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.11
16 16 5 15.3 to 17.1 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 16.8 to 19.1 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 18.8 to 21.2 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 20.8 to 23.3 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 22.8 to 25.6 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0.12
27 27 5 25.1 to 28.9 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 28 to 32 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 31 to 35 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 34 to 38 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 37 to 41 < 90 < 500 1 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12

1)

tp/T ≤ 100 ms, tighter tolerances available on request.

2)

at Tj = 150°C

VZ

2

Rev . A1: 12.12.1994

TELEFUNKEN Semiconductors

)

)

Typical Characteristics (Tj = 25C unless otherwise specified)

BZT55C...

600

500

400

300

200

100

tot

P – Total Power Dissipation ( mW )

0

200

95 9602

0 40 80 120 160

T

– Ambient Temperature ( °C

Figure 1 : Total Power Dissipation vs. Ambient Temperature

1.3

1.2

1.1

1.0

Ztn

0.9

V – Relative Voltage Change

V

Ztn=VZt/VZ

(25°C)

TKVZ=10 10–4/K

8 10–4/K

–4

6 10
4 10–4/K

–4

2 10

0

–2 10

–4 10

/K

/K

–4

/K

–4

/K

1000

Tj=25°C

100

IZ=5mA

10

Z

V – Voltage Change ( mV )



1

25

95 9598

0 5 10 15 20

V

– Z-Voltage ( V

Figure 2 : Typical Change of Working Voltage under Operating

Conditions at T

15

–4

Z

amb

=25C

10

5

IZ=5mA

0

0.8
–60 0 60 120 180

95 9599

Tj – Junction Temperature ( °C )

Figure 3 : Typical Change of Working Voltage vs. Junction

Temperature

200

150

VR=2V

Tj=25°C

100

50

D

C – Diode Capacitance ( pF )

0

95 9601

0 5 10 15

VZ – Z-Voltage ( V )

20

Figure 5 : Diode Capacitance vs. Z–Voltage

Rev . A1: 12.12.1994

240

25

VZ

–5

TK – Temperature Coefficient of V ( 10 /K )

95 9600

0102030

VZ – Z-Voltage ( V )

40

Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage

100

10

Tj=25°C

1

0.1

F

I – Forward Current ( mA )

0.01

0.001
0 0.2 0.4 0.6 0.8

95 9605

VF – Forward Voltage ( V )

Figure 6 : Forward Current vs. Forward Voltage

50

1.0

3

BZT55C...

TELEFUNKEN Semiconductors

Z

I – Z-Current ( mA )

95 9604

W

100

80

P

T

60

40

20

0

04 81216

VZ – Z-Voltage ( V )

Figure 7 : Z–Current vs. Z–Voltage

1000

IZ=1mA

100

=500mW

tot

=25°C

amb

50

P

=500mW

40

tot

T

=25°C

amb

30

20

Z

I – Z-Current ( mA )

10

0

20

95 9607

15 20 25 30

VZ – Z-Voltage ( V )

35

Figure 8 : Z–Current vs. Z–Voltage

5mA

10mA

10

Z

r – Differential Z-Resistance ( )

1

0 5 10 15 20

95 9606

VZ – Z-Voltage ( V )

Figure 9 : Differential Z–Resistance vs. Z–Voltage

1000

tp/T=0.5

100

tp/T=0.2

10

tp/T=0.1

tp/T=0.02

tp/T=0.05

1

thp

Z – Thermal Resistance for Pulse Cond. (K/W)

–1

10

0

10

Tj=25°C

tp/T=0.01

25

Single Pulse

1

10

iZM=(–VZ+(V

2

+4rzjDT/Z

Z

R

=300K/W

thJA

DT=T

jmax–Tamb

1/2

)

)/(2rzj)

thp

2

10

tp – Pulse Length ( ms )95 9603

Figure 10 : Thermal Response

4

Rev . A1: 12.12.1994

TELEFUNKEN Semiconductors

Dimensions in mm

technical drawings
according to DIN
specifications

94 9372

BZT55C...

Cathode Identification

Quadro MELF

Glass Case similar to

JEDEC DO 213 AA

0.35

0.30

3.7

3.3

0.35

0.30

 1.5

1.3

Rev . A1: 12.12.1994

5

BZT55C...

TELEFUNKEN Semiconductors

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements and

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the
environment.

Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known
as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) will soon severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous
improvements to eliminate the use of any ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection
Agency (EPA) in the USA and

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively .

TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.

We reserve the right to make changes to improve technical design without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,

the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax Number: 49 (0)7131 67 2423

6

Rev . A1: 12.12.1994

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