Page 1
g
查询BUD600供应商
Silicon NPN High Voltage Switching Transistor
Features
D
Simple-sWitch-Off Transistor (SWOT)
D
HIGH SPEED technology
D
Planar passivation
D
100 kHz switching rate
D
Very low switching losses
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
D
Very low dynamic saturation
D
Very low operating temperature
D
Optimized RBSOA
D
High reverse voltage
BUD600
1
1
2
3
BUD600
1 Base 2 Collector 3 Emitter
94 8964
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
V
Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60°C P
case
3
BUD600 –SMD
CEO
CEW
V
CES
EBO
C
CM
B
BM
tot
j
stg
2
94 8965
250 V
300 V
600 V
11 V
2 A
3 A
0.75 A
1 A
12 W
150
–65 to +150
°
C
°
C
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
1 (9)
Page 2
BUD600
g
yg
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current V
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation IC = 0.3 A; IB = 0.1 A V
voltage
Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A;
Dynamic saturation voltage IC = 1 A; IB = 0.2 A, t = 1 ms V
Gain bandwidth product IC = 200 mA; VCE = 10 V;
= 600 V I
CES
V
= 600 V; T
CES
IC = 300 mA; L = 125 mH;
measure
= 100 mA
I
= 150°C I
case
V
(BR)CEO
(BR)EBO
IC = 1 A; IB = 0.3 A V
IC = 1 A; IB = 0.3 A V
VCE = 2 V; IC = 0.3 A h
VCE = 2 V; IC = 1 A h
VCE = 5 V; IC = 2 A h
V
= 0.7 A; –IB2 = 0.2 A;
I
B1
= 5 V
–V
BB
CEsatdyn
IC = 1 A; IB = 0.2 A, t = 3 ms V
CEsatdyn
f = 1 MHz
thJC
CES
CES
CEsat
CEsat
BEsat
BEsat
FE
FE
FE
FE
CEW
f
T
7.5 K/W
50
m
0.5 mA
250 V
11 V
0.1 0.2 V
0.25 0.4 V
0.9 1 V
1 1.2 V
15 22
15 20
7 9
4 6
300 V
4 6 V
0.8 1.5 V
4 MHz
A
2 (9)
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
Page 3
BUD600
C
;
B1
;
B2
;
C
;
B1
;
B2
;
C
;
B1
;
B2
;
C
;
B1
;
B2
;
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.3 A; IB1 = 0.1 A; –IB2 = 0.2 A; t
Storage time
VS = 250 V
Fall time t
Turn on time IC = 1 A; IB1 = 0.2 A; –IB2 = 0.5 A; t
Storage time
VS = 250 V
Fall time t
Inductive load (figure 3)
Storage time IC = 0.3 A; IB1 = 0.1 A; –IB2 = 0.2 A; t
V
= 300 V; L = 200 mH
Fall time
clamp
Storage time IC = 1 A; IB1 = 0.2 A; –IB2 = 0.5 A; t
V
= 300 V; L = 200 mH
Fall time
clamp
on
t
on
t
t
t
s
f
s
f
s
f
s
f
0.15 0.3
1.6 2
0.5 0.6
0.25 0.5
0.8 1
0.15 0.25
1.6 2
0.3 0.45
0.8 1
0.1 0.15
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T
t
+
p
V
S2
0.1
10 ms
+
10 V
I
C
w
I
B
5
0to30V
I
Figure 1. Test circuit for V
ICL
VS1+
V
(BR)CEO
(BR)R
C
+
100 m
(BR)CE0
I
C
I
measure
V
CE
V
(BR)CEO
W
TELEFUNKEN Semiconductors
3 (9)
Rev . B2, 18-Jul-97
Page 4
BUD600
94 8852
I
B
I
B1
I
B1
94 8853
0
t
–I
R
C
I
C
B2
(1)
I
V
I
B
R
B
V
BB
+
CE
V
CC
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
C
0.9 I
0.1 I
I
B
I
B1
C
C
t
r
t
d
t
on
t
s
t
off
t
t
f
–I
I
0.9 I
0.1 I
0
t
B2
C
C
C
L
C
(2)
I
C
(1)
I
B1
V
BB
I
B
R
B
+
V
CE
V
clamp
V
CC
t
(1) Fast electronic switch
t
r
s
t
(2) Fast recovery rectifier
Figure 3. Test circuit for switching characteristics – inductive load
4 (9)
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
Page 5
BUD600
Typical Characteristics (T
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
C
CEsat
CEsat
< I
< 2V
< 2V
< 0.5 x I
B2
CEW
C
– Diagram
C
C
I – Collector Current ( A )
I – Collector Current ( A )
95 10482
95 10482
C
I – Collector Current ( A )
0.1 x I
1.0
1.0
V
V
0.5
0.5
0
0
0 100 200 300
0 100 200 300
VCE – Collector Emitter Voltage ( V )
VCE – Collector Emitter Voltage ( V )
Figure 4. V
2.0
1.6
1.2
0.8
0.4
= 25_C unless otherwise specified)
case
100
10
1
0.1
tot
P – Total Power Dissipation ( W )
95 10483
0.01
0 25 50 75 100
T
case
400
400
Figure 7. P
IB = 190 mA
150 mA
88 mA
49 mA
24 mA
10
IC = 0.2 A
1
0.1
R
= 7.5 K/W
thJA
25 K/W
– Case Temperature ( °C )
vs.T
tot
0.4 A
12.5 K/W
50 K/W
135 K/W
125
case
1.0 A
1.5 A
150
0.6 A
0
02468
95 10487
VCE – Collector Emitter Voltage ( V )
Figure 5. IC vs. V
100
10
FE
h – Forward DC Current Transfer Ratio
1
0.01 0.1 1
95 10484
IC – Collector Current ( A )
Figure 6. hFE vs. I
CE
VCE = 2V
C
10V
5V
10
10
0.01
0.001 0.01 0.1
CEsat
V – Collector Emitter Saturation Voltage ( V )
95 10486
IB – Base Current ( A )
Figure 8. V
100
Tj = 125°C
75°C
10
FE
h – Forward DC Current Transfer Ratio
1
0.01 0.1 1
95 10485
IC – Collector Current ( A )
Figure 9. hFE vs. I
25°C
CEsat
vs. I
B
C
1
10
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
5 (9)
Page 6
BUD600
m
s
t – Storage Time ( s )
95 10490
m
s
t – Storage Time ( s )
95 10488
6
saturated switching
5
R-load
I
= 0.3A, IB1 = 0.05A
C
4
3
2
T
=125°C
1
0
case
25°C
024 6
–IB2/I
B1
Figure 10. ts vs. –IB2/I
B1
6
saturated switching
5
R-load
I
= 0.3A, IB1 = 0.1A
C
4
T
=125°C
3
case
2
1
25°C
0
0 0.8 1.6 2.4
–IB2/I
B1
8
3.2
m
f
t – Fall Time ( s )
95 10491
m
f
t – Fall Time ( s )
95 10489
1.0
saturated switching
R-load
I
0.8
= 0.3A, IB1 = 0.05A
C
0.6
T
=125°C
0.4
case
0.2
25°C
0
02 4 6
–IB2/I
B1
Figure 12. tf vs. –IB2/I
B1
0.5
T
=125°C
0.4
0.3
case
25°C
0.2
0.1
saturated switching
R-load
I
= 0.3A, IB1 = 0.1A
C
0
0 0.8 1.6 2.4
–IB2/I
B1
8
3.2
6 (9)
Figure 11. ts vs. –IB2/I
B1
Figure 13. tf vs. –IB2/I
B1
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
Page 7
Dimensions in mm
BUD600
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
14292
7 (9)
Page 8
BUD600
For ordering TO 252 add SMD to the type number (i.e. BUD600 –SMD)
8 (9)
14293
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
Page 9
BUD600
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
9 (9)
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