TEMIC BUD600 User Manual
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查询BUD600供应商
Silicon NPN High Voltage Switching Transistor
Features
D
Simple-sWitch-Off Transistor (SWOT)
D
HIGH SPEED technology
D
Planar passivation
D
100 kHz switching rate
D
Very low switching losses
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
D
Very low dynamic saturation
D
Very low operating temperature
D
Optimized RBSOA
D
High reverse voltage
BUD600
1
1
2
3
BUD600
1 Base 2 Collector 3 Emitter
94 8964
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
V
Emitter-base voltage V
Collector current I
Collector peak current I
Base current I
Base peak current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60°C P
case
3
BUD600 –SMD
CEO
CEW
V
CES
EBO
C
CM
B
BM
tot
j
stg
2
94 8965
250 V
300 V
600 V
11 V
2 A
3 A
0.75 A
1 A
12 W
150
–65 to +150
°
C
°
C
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
1 (9)
BUD600
g
yg
Maximum Thermal Resistance
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Value Unit
Junction case R
Electrical Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current V
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage IE = 1 mA V
Collector-emitter saturation IC = 0.3 A; IB = 0.1 A V
voltage
Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA h
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A;
Dynamic saturation voltage IC = 1 A; IB = 0.2 A, t = 1 ms V
Gain bandwidth product IC = 200 mA; VCE = 10 V;
= 600 V I
CES
V
= 600 V; T
CES
IC = 300 mA; L = 125 mH;
measure
= 100 mA
I
= 150°C I
case
V
(BR)CEO
(BR)EBO
IC = 1 A; IB = 0.3 A V
IC = 1 A; IB = 0.3 A V
VCE = 2 V; IC = 0.3 A h
VCE = 2 V; IC = 1 A h
VCE = 5 V; IC = 2 A h
V
= 0.7 A; –IB2 = 0.2 A;
I
B1
= 5 V
–V
BB
CEsatdyn
IC = 1 A; IB = 0.2 A, t = 3 ms V
CEsatdyn
f = 1 MHz
thJC
CES
CES
CEsat
CEsat
BEsat
BEsat
FE
FE
FE
FE
CEW
f
T
7.5 K/W
50
m
0.5 mA
250 V
11 V
0.1 0.2 V
0.25 0.4 V
0.9 1 V
1 1.2 V
15 22
15 20
7 9
4 6
300 V
4 6 V
0.8 1.5 V
4 MHz
A
2 (9)
TELEFUNKEN Semiconductors
Rev . B2, 18-Jul-97
BUD600
C
;
B1
;
B2
;
C
;
B1
;
B2
;
C
;
B1
;
B2
;
C
;
B1
;
B2
;
Switching Characteristics
T
= 25°C, unless otherwise specified
case
Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 0.3 A; IB1 = 0.1 A; –IB2 = 0.2 A; t
Storage time
VS = 250 V
Fall time t
Turn on time IC = 1 A; IB1 = 0.2 A; –IB2 = 0.5 A; t
Storage time
VS = 250 V
Fall time t
Inductive load (figure 3)
Storage time IC = 0.3 A; IB1 = 0.1 A; –IB2 = 0.2 A; t
V
= 300 V; L = 200 mH
Fall time
clamp
Storage time IC = 1 A; IB1 = 0.2 A; –IB2 = 0.5 A; t
V
= 300 V; L = 200 mH
Fall time
clamp
on
t
on
t
t
t
s
f
s
f
s
f
s
f
0.15 0.3
1.6 2
0.5 0.6
0.25 0.5
0.8 1
0.15 0.25
1.6 2
0.3 0.45
0.8 1
0.1 0.15
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
3 Pulses
t
p
+
T
t
+
p
V
S2
0.1
10 ms
+
10 V
I
C
w
I
B
5
0to30V
I
Figure 1. Test circuit for V
ICL
VS1+
V
(BR)CEO
(BR)R
C
+
100 m
(BR)CE0
I
C
I
measure
V
CE
V
(BR)CEO
W
TELEFUNKEN Semiconductors
3 (9)
Rev . B2, 18-Jul-97
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