TEMIC BPW14NC, BPW14NB Datasheet

Silicon NPN Phototransistor

Description

BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of ±12° makes it
insensible to ambient straylight. A base terminal is avail­able to enable biasing and sensitivity control.

Features

D

Hermetically sealed case

D

Lens window

D

Narrow viewing angle ϕ = ± 10

D

Exact central chip alignment

D

Base terminal available

D

High photo sensitivity

D

Fast response times

D

Suitable for visible and near infrared radiation

D

Selected into sensitivity groups

°

BPW14N

94 8486

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current tp/T = 0.5, tp x 10 ms I
Total Power Dissipation T
Junction T emperature T
Storage T emperature Range T
Soldering T emperature t x 5 s T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R

x 25 °C P

amb

CBO
CEO
EBO

C

CM

tot

j

stg

sd
thJA
thJC

32 V
32 V

5 V

50 mA
100 mA
310 mW
150

–55...+150

260
400 K/W
150 K/W

°

C

°

C

°

C

TELEFUNKEN Semiconductors

Rev . A2, 15-Jul-96

1 (6)

BPW14N

ge,

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Base Capacitance VCB = 5 V, f = 1 MHz, E=0 C
Angle of Half Sensitivity ϕ ±10 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS=5V, IC=5mA, RL=100
Turn–Off Time VS=5V, IC=5mA, RL=100
Cut–Off Frequency VS=5V, IC=5mA, RL=100

Type Dedicated Characteristics

T

= 25_C

amb

IC = 1 mA V

IC = 1 mA, IB = 100 mA V

W
W
W

(BR)CEO

CEO

CEO
CBO

l

p

l

0.5

CEsat

t

on

t

off

f

c

32 V

1 100 nA

5.7 pF

6.5 pF

780 nm

520...950 nm

0.3 V

3.2

2.7

170 kHz

m

s

m

s

Parameter Test Conditions T ype Symbol Min Typ Max Unit

Collector Light Current Ee=1mW/cm2,

l

=950nm, VCE=5V

BPW14NB I
BPW14NC I

ca
ca

1.0 1.5 2.0 mA

1.7 3.0 mA

2 (6)

TELEFUNKEN Semiconductors

Rev . A2, 15-Jul-96