TEMIC BFR90A Datasheet
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR90A
94 9308
1
BFR90A Marking: BFR90A
Plastic case (TO 50)
1= Collector; 2= Emitter; 3= Base
Absolute Maximum Ratings
Parameters Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60°C P
amb
Maximum Thermal Resistance
Parameters Symbol Value Unit
Junction ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35 mm Cu R
CBO
CEO
EBO
C
tot
j
stg
thJA
20 V
15 V
2 V
30 mA
300 mW
150 °C
–65 to +150 °C
300 K/W
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
1 (6)
BFR90A
Electrical DC Characteristics
Tj = 25°C, unless otherwise specified
Parameters / T est Conditions Symbol Min. Typ. Max. Unit
Collector-emitter cut-off current
V
= 20 V, VBE = 0 I
CE
Collector-base cut-off current
V
= 15 V, I
CB
Emitter-base cut-off current
V
= 2 V, I
EB
Collector-emitter breakdown voltage
I
= 1 mA, I
C
DC forward current transfer ratio
V
= 10 V, IC = 14 mA h
CE
Electrical AC Characteristics
T
= 25°C
amb
Transition frequency
V
= 10 V, IC = 14 mA, f = 500 MHz f
CE
Collector-emitter capacitance
V
= 10 V, f = 1 MHz C
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz C
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz C
EB
Noise figure
V
= 10 V, IC = 2 mA, f = 800 MHz, ZS = 50
CE
Power gain
V
= 10 V, IC = 14 mA, ZL = Z
CE
Linear output voltage – two tone intermodulation test
V
= 10 V, IC = 14 mA, dIM = 60 dB,
CE
Z
= ZL = 50
S
Third order intercept point
V
= 10 V, IC = 14 mA, f = 800 MHz IP
CE
= 0 I
E
= 0 I
C
= 0 V
B
Parameters / T est Conditions Symbol Min. Typ. Max. Unit
, f = 800 MHz G
Lopt
f1 = 806 MHz, f2 = 810 MHz V
CES
CBO
EBO
(BR)CEO
FE
T
ce
cb
eb
F 1.8 dB
pe
= V
1
2
3
15 V
50 100 150
6 GHz
0.25 pF
0.3 pF
0.9 pF
16 dB
120 mV
24 dBm
100
100 nA
10
m
A
m
A
2 (6)
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
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