Telefunken VN66AFD, VN0606L, TN0601L Datasheet

PRODUCT SUMMARY

TN0601L, VN0606L, VN66AFD

Vishay Siliconix

N-Channel 60-V (D-S) MOSFETs

Part Number V

TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47
VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33

VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46

(BR)DSS

Min (V)

r

DS(on)

Max (W)

V

(V) ID (A)

GS(th)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage

TO-226AA

(TO-92)

S

G

D

1

2

3

Top View

TN0601L
VN0606L

D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage

Device Marking

Front View

TN0601L

“S” TN

0601L

xxyy

VN0606L

“S” VN

0606L

xxyy

“S” = Siliconix Logo
xxyy = Date Code

D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems
D Solid-State Relays

TO-220SD

(Tab Drain)

1

S

G

2

D

3

Top View

VN66AFD

Device Marking

Front View

VN66AFD

VN66AFD

“S” xxyy

“S” = Siliconix Logo
xxyy = Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol TN0601L VN0606L VN66AFD

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current

Continuous Drain Current
(T

= 150_C)

J

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R
Thermal Resistance, Junction-to-Case R
Operating Junction and Storage Temperature Range TJ, T

Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.

Document Number: 70201
S-04279—Rev. E, 16-Jul-01

a

TA= 25_C

TA= 100_C

TA= 25_C

TA= 100_C

I

P

DS
GS

I

D

DM

D

thJA
thJC

stg

60 60 60

"20 "30 "30

0.47 0.33 1.46

0.29 0.21 0.92

1.5 1.6 3

0.8 0.8 15

0.32 0.32 6
156 156

–55 to 150

8.3

b

Unit

V

A

W

_

_C/W

_C

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11-1

TN0601L, VN0606L, VN66AFD

m

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Drain-Source Breakdown Voltage V

(BR)DSS

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate VoltageDrain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Common Source Output Conductance

b

b

b

b

r

Dynamic

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Switching

c

GS(th)

GSS

GSS

DSS

DSS

I

D(on)

DS(on)

g

fs

g

os

iss
oss
rss

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 0.25 mA 1.6 0.5 2 V

VDS = VGS, ID = 1 mA 1.7 0.8 2 0.8 2.5

VDS = 0 V, VGS = "30 V "100 "100

TC = 125_C

VDS = 0 V, VGS = "20 V "10

VDS = 60 V, VGS = 0 V 10

T

= 125_C

J

VDS = 48 V, VGS = 0 V 1 1

T

= 125_C

J

TC = 125_C
VDS = 10 V, VGS = 4.5 V 0.5 0.25
VDS = 10 V, VGS = 10 V 2.4 1 1.5 1.5

VGS = 3.5 V, ID = 0.04 A 4 5
VGS = 4.5 V, ID = 0.25 A 2 3

T

= 125_C

J

VGS = 5 V, ID = 0.3 A 2.3 5

VGS = 10 V, ID = 0.5 A 1.2 3

T

= 125_C

J

VGS = 10 V, ID = 1 A 1.3 1.8 3

TC = 125_C

VDS = 10 V, ID = 0.5 A 350 200 170 170
VDS = 10 V, ID = 0.1 A 0.3

VDS = 25 V, VGS = 0 V,

f = 1 MHz

f = 1 MHz

Limits

TN0601L VN0606L VN66AFD

70 60 60 60

"500

500

100

10

3.8 6

2.3 6

2.5 6

35 60 50 50
25 50 40 40 pF

6 10 10 10

nA

mA

A

W

mS

Turn-On Time t
Turn-Off Time t

Notes
a. For DESIGN AID ONLY, not subject to production testing.. VNDQ06
b. Pulse test: PW v 300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

ON

OFF

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11-2

VDD = 25 V, RL = 23 W
ID ^ 1 A, V

R

G

GEN

= 25 W

= 10 V

8 15 10 15
9 15 10 15

Document Number: 70201

S-04279—Rev. E, 16-Jul-01

ns