The TSOP18..SI3V – series are miniaturized
receivers for infrared remote control systems. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
16124
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
TTL and CMOS compatibility
D
Output active low
D
Improved shielding against electrical field
disturbance
D
Suitable burst length ≥6 cycles/burst
Block Diagram
Input
PIN
AGC
Special Features
D
Small size package
D
Supply voltage 3–6 Volt
D
Enhanced immunity against all kinds of
disturbance light
D
No occurrence of disturbance pulses at
the output
D
Short settling time after power on (<200ms)
Control
Circuit
Band
Pass
Demodu-
lator
80 k
3
V
S
W
1
OUT
2
GND
Document Number 82134
16249
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1 (7)Rev. 1, 26-Jun-00
TSOP18..SI3V
y()
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
ParameterTest ConditionsSymbolValueUnit
Supply Voltage(Pin 3)V
Supply Current(Pin 3)I
Output Voltage(Pin 1)V
Output Current(Pin 1)I
Junction TemperatureT
Storage Temperature RangeT
Operating Temperature RangeT
Power Consumption(T
Soldering Temperaturet x 10 s, 1 mm from caseT
Basic Characteristics
T
= 25_C
amb
ParameterTest ConditionsSymbolMinTypMaxUnit
Supply Current (Pin 3)VS = 3 V, Ev = 0I
VS = 3 V, Ev = 40 klx, sunlightI
Supply Voltage (Pin 3)V
Transmission DistanceEv = 0, test signal see fig.6,
IrradianceE
DirectivityAngle of half transmission distanceϕ
= 0.5 mA,
OSL
Ee = 0.7 mW/m2, f = f
tpo < tpi + 5/fo, test signal see fig.6
t
< tpi + 5/fo, test signal see fig.6
po
x 85 °C)P
amb
= 300 mA
F
o
SD
SH
S
d35m
V
OSL
E
e min
E
e min
e max
1/2
S
S
O
O
j
stg
amb
tot
sd
–0.3...6.0V
5mA
–0.3...6.0V
5mA
100
–25...+85
–25...+85
50mW
260
0.50.751.0mA
1.0mA
3.06.0V
250mV
0.30.5mW/m
0.40.7mW/m
30W/m
±45deg
°
C
°
C
°
C
°
C
2
2
2
Application Circuit
TSAL62..
15803
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2 (7)
TSOP18..SI3V
330
W
3
1
4.7 mF *)
*)
>10 k
W
recomm.
m
C
+3 V **)
2
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 3V<V
<6V
S
Document Number 82134
Rev. 1, 26-Jun-00
Suitable Data Format
The circuit of the TSOP18..SI3V is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal ( not
suppressed) and disturbance signal (supressed) are
carrier frequency, burst length and Signal Gap Time
(see diagram below).
TSOP18..SI3V
Vishay Telefunken
Some examples for suitable data format are:
NEC Code (repetitive pulse), NEC Code (repetitive
data), Toshiba Micom Format, Sharp Code, RC5
Code, RECS–80 Code, R–2000 Code.
When a disturbance signal is applied to the
TSOP18..SI3V it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
The data signal should fullfill the following condition:
• Carrier frequency should be close to center
Some examples for such disturbance signals which
are suppressed by the TSOP18..SI3V are:
frequency of the bandpass (e.g. 38kHz).
• DC light (e.g. from tungsten bulb or sunlight),
• Burst length should be 6 cycles/burst or longer.
• After each burst a gap time of at least 9 cycles is
neccessary.
• The data format should not make a continuous
• Continuous signal at 38kHz or at any other
frequency,
• Signals from fluorescent lamps (see figure B).
signal transmission. There must be a Signal Gap Time
(longer than 25ms) at least each 150ms (see Figure A)
Signal Gap Time
020406080100120140
time [ms]
• Continuous IR signal (e.g. 1ms burst, 2ms pause)
Figure A: Data Signal (Output of IR Receiver) with a Signal Gap Time of 45ms
Signal Gap Time
0 2 4 6 8101214161820
time [ms]
Figure B: Disturbance Signal from Fluorescent Lamp with Signal Gap Time of 7ms (suppressed by TSOP18..SI3V)
Document Number 82134
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3 (7)Rev. 1, 26-Jun-00
TSOP18..SI3V
Vishay Telefunken
Typical Characteristics (T
amb
1.0
0.8
0.6
0.4
e
0.2
E / E – Rel. Responsitivity
e min
f = f0"
D
f ( 3dB ) = f
5%
/7
0
0.0
94 9102
0.70.80.91.01.1
f/f0 – Relative Frequency
1.2
Figure 1. Frequency Dependence of Responsivity
4.5
2
E – Threshold Irradiance (mW/m )
e min
Correlation with ambient light sources
4.0
(Disturbance effect):10W/m2^1.4klx
(Stand.illum.A,T=2855K)^8.2klx
3.5
3.0
(Daylight,T=5900K)
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0
0.010.101.0010.00100.00
E – DC Irradiance (W/m2)96 12214
= 25_C unless otherwise specified)
100.0
2
f = f
o
1.3
10.0
1.0
e min
E – Threshold Irradiance (mW/m )
0.1
0.11.010.0100.01000.0
96 12215
D
V
AC Voltage on DC Supply Voltage (mV)
sRMS –
Figure 4. Sensitivity vs. Supply Voltage Disturbances
1.0
2
E – Threshold Irradiance (mW/m )
e min
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Sensitivity in dark ambient
0
2.53.03.54.04.55.05.56.0
VS – Supply Voltage ( V )96 12216
10 kHz
1 kHz
100 Hz
Figure 2. Sensitivity in Bright Ambient
2
2.0
f(E)=f
0
1.6
1.2
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
0.00.40.81.21.6
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 3. Sensitivity vs. Electric Field Disturbances
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4 (7)
2.0
Figure 5. Sensitivity vs. Supply Voltage
Optical Test Signal
E
e
600 ms600 ms
TD*
T
=100 ms
* T
rep–TD
Output Signal, ( see Fig.7 )
V
O
V
OH
V
OL
rep
> 25 ms is recommended for optimal function
T
on
Figure 6.
t
16177
T
off
t
Document Number 82134
Rev. 1, 26-Jun-00
TSOP18..SI3V
Vishay Telefunken
0.8
T
0.7
on
0.6
0.5
T
off
0.4
0.3
0.2
0.1
on off
T ,T – Output Pulse Length (ms)
0
0.11.010.0100.0 1000.0 10000.0
Ee – Irradiance (mW/m2)16043
Figure 7. Output Pulse Diagram
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
s
0.2
I – Supply Current ( mA )
0.1
0
–30 –150153045607590
T
– Ambient Temperature ( °C )16044
amb
Vs = 3 V
1.7
1.6
Supply current in dark ambient
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
s
I – Supply Current ( mA )
0.7
0.6
0.5
2.53.03.54.04.55.05.56.0
VS – Supply Voltage ( V )96 12222
Figure 10. Supply Current vs. Supply Voltage
1.2
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
7508509501050
l
94 8408
– Wavelength ( nm )
1150
Figure 8. Supply Current vs. Ambient Temperature
1.0
2
0.9
0.8
Sensitivity in dark ambient
0.7
0.6
0.5
0.4
0.3
0.2
0.1
e min
E – Threshold Irradiance (mW/m )
0
–30 –150153045607590
T
– Ambient Temperature ( °C )96 12221
amb
Figure 9. Sensitivity vs. Ambient Temperature
Document Number 82134
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°20°
30°
40°
1.0
50°
60°
70°
80°
0.6
96 12223p2
0.9
0.8
0.7
0.40.200.20.4
0.6
d
– Relative Transmission Distance
rel
Figure 12. Directivity
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5 (7)Rev. 1, 26-Jun-00
TSOP18..SI3V
Vishay Telefunken
Dimensions in mm
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6 (7)
15844
Document Number 82134
Rev. 1, 26-Jun-00
TSOP18..SI3V
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.