TELEFUNKEN CNY 74-4 TEL Datasheet

CNY74-2H, CNY74-4H

Vishay Semiconductors

Optocoupler, Phototransistor Output (Multichannel)

Dual Channel

Quad Channel

i179015-1

A

C

C

A

A

C

C

A

A

C

C

A

i179015-2

1

2

3

4

1

2

3

4

5

6

7

8

8

E

7

C

C

6

E

5

16

E

15

C

C

14

13

E

12

E

C

11

C

10

E

9

DESCRIPTION

The CNY74-2H, CNY74-4H is an optically coupled pair with
a GaAIAs infrared LED and a silicon NPN phototransistor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output.
The CNY74-2H, CNY74-4H is especially for driving
medium-speed logic, where it may be used to eliminate
troublesome ground loop and noise problems. Also it can be
used to replace relays and transformers in many digital
interface applications, as well as analog applications such as
CTR modulation.
The CNY74-2H has two isolated channels in a single DIP
package; the CNY74-4H has four isolated channels per
package.

FEATURES

• CNY74-2H, CNY74-4H TTL compatible

• Transfer ratio, 35 % typical

• Coupling capacitance, 0.5 pF

• Dual and quad channel

• Industry standard DIP packages

• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC

AGENCY APPROVALS

• UL1577, file no. E52744 system code H, double protection

• UL1577, file no. E52744, equivalent to CSA bulletin 5A

ORDER INFORMATION

PART REMARKS

CNY74-2H CTR 50 % to 600 %, dual channel DIP-8

CNY74-4H CTR 50 % to 600 %, quad channel DIP-16

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

INPUT

Peak reverse voltage V
Forward continuous current I
Power dissipation P

R

F

diss

Derate linearly from 55 % 1.33 mW/°C

Document Number: 83526 For technical questions, contact: [e-mail]
Rev. 1.9, 20-Oct-09 1

3V

60 mA

100 mW

www.vishay.com

CNY74-2H, CNY74-4H

Vishay Semiconductors

Optocoupler, Phototransistor Output

(Multichannel)

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

OUTPUT

Collector emitter breakdown voltage BV
Emitter collector breakdown voltage BV
Power dissipation P

CEO

ECO

diss

Derate linearly from 25 °C 2mW/°C

COUPLER

Isolation test voltage t = 1 s V

V

Isolation resistance

Total package dissipation

Derate linearly from 25 °C

= 500 V, T

IO

V

= 500 V, T

IO

= 25 °C R

amb

= 100 °C R

amb

CNY74-2H P
CNY74-4H P
CNY74-2H 5.33 mW/°C
CNY74-4H 6.67 mW/°C

ISO

IO

IO

tot

tot

Creepage distance ≥ 7mm

Clearance distance ≥ 7mm

Storage temperature T

Operating temperature T

stg

amb

Lead soldering time at 260 °C 10 s

Note

T

= 25 °C, unless otherwise specified.

amb

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.

70 V

7V

150 mW

5300 V

12

≥ 10

11

≥ 10

RMS

Ω

Ω

400 mW
500 mW

- 55 to + 150 °C

- 55 to + 100 °C

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage I

Reverse current V

Capacitance V

= 20 mA V

F

= 3 V I

R

= 0 V C

R

F

R

O

1.3 1.5 V

0.1 100 µA

25 pF

OUTPUT

Collector emitter breakdown voltage I

Collector emitter leakage current V

Capacitance collector emitter V

= 1 mA BV

C

= 5 V, IF = 0 A I

CE

= 0 V, f = 1 Hz C

CE

CEO

CEO

CE

70 V

100 nA

10 pF

COUPLER

Saturation voltage, collector emitter I

= 2 mA, IF = 16 mA V

C

Resistance (input to output) R

Capacitance (input to output) C

CEsat

IO

IO

0.3 0.5 V

100 GΩ

0.5 pF

Note

T

= 25 °C, unless otherwise specified.

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

DC current transfer ratio I

DC current transfer ratio I

= 5 mA, VCE = 5 V CTR 50 600 %

F

= 10 mA, VCE = 5 V CTR 60 %

F

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 83526

2 Rev. 1.9, 20-Oct-09

CNY74-2H, CNY74-4H

Optocoupler, Phototransistor Output

Vishay Semiconductors

(Multichannel)

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

I

I

F

F

50 Ω 100 Ω

95 10804

0

RG = 50 Ω

t

p

= 0.01

T

tp = 50 µs

Fig. 1 - Test Circuit, Non-Saturated Operation

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t

S

= 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) t

S

= 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) t

S

+ 5 V

IC = 2 mA; adjusted through

Channel I

Channel II

input amplitude

Oscilloscope
R

= 1 MΩ

L

= 20 pF

C

L

d

r

f

s

on

off

on

off

I

F

0

I

C

100 %

90 %

10 %

0

t

t

d

t

t

p

t

d

t

r

(= td + tr) Turn-on time

t

on

on

Pulse duration
Delay time
Rise time

Fig. 3 - Switching Times

3µs

3µs

4.7 µs

0.3 µs

6µs

5µs

9µs

18 µs

t

p

r

t

f

t

s

t

off

t

s

t

f

t

(= ts + tf)Turn-off time

off

t

t

Storage time
Fall time

96 11698

1 kΩ

+ 5 V

I

C

Channel I

Channel II

Oscilloscope

R

1 MΩ

≥

L

C

20 pF

≤

L

0

RG= 50 Ω

t

p

= 0.01

T

tp= 50 µs

95 10843

I

= 10 mA

I

F

F

50 Ω

Fig. 2 - Test Circuit, Saturated Operation

Document Number: 83526 For technical questions, contact: [e-mail]

www.vishay.com

Rev. 1.9, 20-Oct-09 3