TELEFUNKEN BY 203/20S TEL Datasheet
Silicon Mesa Rectifiers
R
Crest working reverse voltage
RWM
Junction ambient
R
K/W
R
m
(BR)
g
R
m
(BR)
Features
D
Glass passivated junction
D
Hermetically sealed package
Applications
BY203/..S
Vishay Telefunken
Fast rectifier and switch for TV–line output
circuits and switch mode power supply
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
everse voltage=
BY203/12S 1200
BY203/16S V
BY203/20S
Average forward current I
Peak forward surge current tp=10ms half sinewave I
Junction and storage tempera-
ture range
Non reptitive reverse avalanche
energy
I
=0.4A E
(BR)R
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
l=10mm, TL=constant
maximum lead length
Tj=T
thJA
RWM
FAV
FSM
stg
R
94 9539
1600 V
2000
250 mA
20 A
–55...+150
10 mJ
45
100
°
C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA, tp/T=0.01, tp=0.3ms V
Reverse current VR=1000V BY203/16S I
Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms BY203/16S V
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86002
Rev. 4 27-Sep-00
F
2.4 V
VR=700V BY203/12S 2
R
VR=1200V BY203/20S
BY203/12S 1200
1600 V
BY203/20S
2000
rr
300 ns
www.vishay.com
2
m
A
2
1 (4)
BY203/..S
g
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
240
200
°
160
120
80
j
40
T – Junction Temperature ( C )
BY203/12
BY203/16
V
RRM
V
R
BY203/20
0
94 9080
0 400 800 1200
VR,V
– Reverse / Repetitive Peak Reverse
RRM
Volta
e ( V )
Figure 1. Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
10.000
1.000
Tj=175°C
0.100
0.010
F
I – Forward Current ( A)
Tj=25°C
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VF – Forward Voltage ( V )16397
Figure 2. Forward Current vs. Forward Voltage
1600
1000
VR = V
RRM
m
100
10
R
I – Reverse Current ( A )
1
25 50 75 100 125 150
Tj – Junction Temperature ( °C )16399
Figure 4. Reverse Current vs. Junction Temperature
500
400
300
200
PR–Limit
@80%V
100
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150
Tj – Junction Temperature ( °C )16400
VR = V
PR–Limit
@100%V
R
RRM
R
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
0.30
0.25
R
thJA
l=10mm
=45K/W
0.20
R
=100K/W
0.15
thJA
PCB: d=25mm
0.10
0.05
FAV
I – Average Forward Current ( A )
VR=V
RRM
half sinewave
0
0 30 60 90 120 150
T
– Ambient Temperature ( °C )16398
amb
Figure 3. Max. Average Forward Current vs.
18
16
f=1MHz
14
12
10
8
6
4
D
C – Diode Capacitance ( pF )
2
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )16401
Figure 6. Diode Capacitance vs. Reverse Voltage
Ambient Temperature
www.vishay.com Document Number 86002
2 (4) Rev. 4, 27-Sep-00
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