TelCom Semiconductor Inc TC96C555EOA, TC96C555EPA, TC96C555CPA, TC96C555COA, TC96C555MJA Datasheet
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
1
TC96C55
FEATURES
■ Controllable Duty Cycle
■ Wide Operating Range .............................5V to 18V
■ High Peak Output Current .................................. 3A
■ High Capacitive Load Drive
Capability .................................... 1800pF in 20nsec
■ Short Delay Time ............................. < 150nsec Typ
APPLICATIONS
■ Fixed Frequency Power Oscillator
■ Voltage Controlled Oscillator
■ Low Power Buck Regulator Supply
■ MOSFET Driver
■ Simple diode inverters and doublers
ORDERING INFORMATION
Operating
Part No. Package Temp Range
TC96C555COA 8-Pin SOIC 0°C to +70°C
TC96C555CPA 8-Pin Plastic DIP 0°C to +70°C
TC96C555EOA 8-Pin SOIC – 40°C to +85°C
TC96C555EPA 8-Pin Plastic DIP – 40°C to +85°C
TC96C555MJA 8-Pin CerDIP – 55°C to +125°C
GENERAL DESCRIPTION
The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power
supplies, diode doublers and inverters, and similar circuits
where high-current pulses are needed in an economical
form.
The TC96C555 uses TelCom Semiconductors' new
Tough CMOS™ process. The output drive capability is
similar to the TC4423/4/5 MOSFET Drivers, which can
switch in 25nsec into a capacitive load of 1,800pF. The
TC96C555 will not latch up under any conditions within their
power and voltage ratings. They can accept, without damage, up to 1.5A of reverse current (of either polarity) being
forced back into the output. All terminals are also fully
protected against up to 4kV of electrostatic discharge. The
peak output is rated at 3A. Split outputs permits driving of an
external pair of MOSFETS, with controllable cross conduction between upper and lower devices.
PIN CONFIGURATIONS (DIP and SOIC)
V
V
V
18
R2
27
V
IN
TC96C555CPA
36
REF
V
R1
TC96C555EPA
45
R2
GND
OUT
OUT
V
DD
18
V
IN
2
V
REF
36
V
R1
45
TC96C555COA
TC96C555EOA
GND
7
OUT
OUT
V
DD
2
3
4
5
FUNCTIONAL BLOCK DIAGRAM
V
REF
3
4
V
R1
V
IN
V
R2
3V
2
1
3V
I
SOURCE
I
SINK
TELCOM SEMICONDUCTOR, INC.
V
DD
+4V
2V
1V
Q
3
V
REF
1V 2V 3V
8
Q
1
7
OUTPUT A
OUTPUT B
Q
2
6
GND
5
6
7
8
TC96C555-7 10/21/96
4-159
TC96C555
3A OUTPUT PROGRAMMABLE
POWER OSCILLA TOR
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +20V
Input Voltage, Pin 1 or 4.................V
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Package Thermal Resistance
CerDIP R
CerDIP R
PDIP R
PDIP R
................................................................ 150°C/W
ΘJ-A
...................................................................50°C/W
ΘJ-C
.................................................................... 125°C/W
ΘJ-A
.......................................................................42°C/W
ΘJ-C
+0.3 to GND –0.3
DD
SOIC R
SOIC R
Operating Temperature Range
C Version...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version .......................................– 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
ELECTRICAL CHARACTERISTICS: unless otherwise specified T
.................................................................... 155°C/W
ΘJ-A
.......................................................................45°C/W
ΘJ-C
= +25°C with 5V ≤ VDD ≤ 18V.
A
Symbol Parameter Test Condition Min Typ Max Unit
Programmable Current Range
Pin 4 Input Current for I
Pin 1 Input Current for I
Control (V
SOURCE
Control (V
SINK
REF
REF
- VR1) / R
- VR2) / R
CHG
Fig. 2
DIS
Fig. 2
5.0 — 150 µA
5.0 — 150 µA
Reference Section
V
REF
V
DRIFT
TCV
V
R1, VR2
V
REF
V
ih
V
il
V
ih
I
REF
REF
- V
- V
Line Regulation of V
Load Regulation of V
V
Drift Over Lifetime — — 5 %
REF
V
Tempco
REF
Voltage at Pin 1 & 4 2.85 3.0 3.15 V
R
Voltage Across R
Pin 2, High Switching Threshold
Pin 2, Low Switching Threshold
il
Delta High to Low Threshold
V
Pin 3 Short to GND Pin 5
REF
CHG
REF
REF
and R
DIS
ELECTRICAL CHARACTERISTICS: unless otherwise specified T
VDD = 15V, I
REF
= 10µA
3.8 4 4.2 V
VDD = 7V to 18V — 0.6 1 %/V
I
= 0 to 1mA — 0.1 0.2 %/mA
REF
– 55 ≤ Temp ≤ 125°C
— 1100 2000 ppm/°C
0.85 1 1.15 V
VDD = 15V 1.8 2 2.2 V
VDD = 15V 0.8 1 1.2 V
VDD = 15V 0.9 1.0 1.1 V
VDD = 15V — 8 15 mA
= +25°C with 10V ≤ V
A
DD
≤ 18V:
Symbol Parameter Test Condition Min Typ Max Unit
Oscillator
Voltage Stability VDD = 7 to 18V – 1 5 %/V
Temperature Stability – 55 ≤ Temp ≤ 125°C – 0.4 – %/°C
Power Supply
Power Supply Current IDD0 ≤ VIN ≤ 3V – 2 3 mA
Switching Time
t
R
t
F
t
D1
t
D2
1
Rise Time C1 = 1800pF – 23 30 nsec
Fall Time C1 = 1800pF – 20 30 nsec
Delay Time C1 = 1800pF – 140 180 nsec
Delay Time C1 = 1800pF – 100 140 nsec
Output
V
OH
V
OL
R
O
R
O
I
PK
4-160
High Output Voltage
V
DD
– 0.025
–– V
Low Output Voltage – – 0.025 V
Output Res Hi State VDD = 15V – 3.5 5 Ω
Output Res Lo State V
= 15V – 2.5 5 Ω
DD
Peak Output Current VDD = 18V – 3 – A
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE
POWER OSCILLA TOR
TC96C555
ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise
specified 5.0V < V
Symbol Parameter Test Condition Min Typ Max Unit
Programmable Current Range
Pin 4 Input Current for I
Pin 1 Input Current for I
Control (V
SOURCE
Control (V
SINK
REF-VR1
REF-VR2
Reference Section
V
REF
VDD = 7 to 18V Line Regulation of V
I
= 0 to 1mA Load Regulation of V
REF
V
DRIFT
TCV
REF
V
R1, VR2
V
REF-VR
V
ih
V
il
V
to V
ih
il
I
REF
VDD = 15V I
REF
REF
V
Drift Over Lifetime – – 5 %
REF
V
Tempco – 55 ≤ Temp ≤ 125°C – 1100 2000 ppm/°C
REF
Voltage Pin at 1 and 4 VDD = 15V 2.7 3 3.3 V
Voltage Across R
Pin 2, High Switching Threshold VDD = 15V 1.75 2 2.25 V
Pin 2, Low Switching Threshold VDD = 15V 0.75 1 1.25 V
Delta High to Low Threshold VDD = 15V 0.9 1.0 1.1 V
V
Pin 3 Short to GND Pin 5 VDD = 15V – – 18 mA
REF
CHG
and R
DIS
= 10µA 3.6 4 4.4 V
REF
Oscillator
Voltage Stability VDD = 7V to 18V – 1 8 %/V
Temperature Stability – 55 ≤ Temp ≤ 125°C – 0.4 – %/°C
Power Supply
I
DD
Switching Time
t
R
t
F
t
D1
t
D2
Power Supply Current 0 ≤ VIN ≤ 3V – – 4 mA
1
Rise Time C1 = 180pF, Fig. 1 – 33 40 nsec
Fall Time C1 = 1800pF, Fig. 1 – 30 40 nsec
Delay Time Fg. 1 – 180 220 nsec
Delay Time Fig. 1 – 160 200 nsec
Output
V
OH
V
OL
R
O
R
O
I
PK
NOTE :1Switching times guaranteed by design.
The typical values are from 125°C measurements.
Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those
listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating
Conditions may affect device reliability.
High Output Voltage
Low Output Voltage – – 0.025 V
Output Res Hi State V
Output Res Lo State VDD = 15V – 3.4 6 Ω
Peak Output Current VDD = 18V – 2 – A
= 15V – 4.5 6 Ω
DD
DD
) / R
) / R
<18V.
Fig. 2
CHG
Fig. 2
DIS
5.0 – 100 µA
5.0 – 100 µA
– 0.9 1.5 %/V
– 0.1 0.4 %/mA
0.8 1 1.2 V
V
– 0.025
DD
–– V
1
2
3
4
5
6
7
TELCOM SEMICONDUCTOR, INC.
8
4-161
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