TelCom Semiconductor Inc TC911BCPA, TC911BCOA, TC911ACPA, TC911ACOA Datasheet

AUTO-ZEROED OPERATIONAL AMPLIFIERS

FEATURES

First Monolithic Chopper-Stabilized Amplifier
Offset Voltage .................................................... 5µV
Offset Voltage Drift .................................. 0.05µV/°C
Low Supply Current ...................................... 350µA
High Common-Mode Rejection .................... 116dB
Single Supply Operation.......................4.5V to 16V
High Slew Rate............................................. 2.5V/µs
Wide Bandwidth............................................1.5MHz
High Open-Loop Voltage Gain
(RL = 10 k) .................................................... 120dB
Low Input Voltage Noise
(0.1 Hz to 1 Hz).......................................... 0.65µV
P-P
Pin Compatible With ICL7650
Lower System Parts Count

ORDERING INFORMATION

Maximum
Temperature Offset
Part No. Package Range Voltage
TC911ACOA 8-Pin SOIC 0°C to +70°C15µV TC911ACPA 8-Pin 0°C to +70°C15µV
Plastic DIP TC911BCOA 8-Pin SOIC 0°C to +70°C30µV TC911BCPA 8-Pin 0°C to +70°C30µV
Plastic DIP

FUNCTIONAL BLOCK DIAGRAM

V
SS
V CORRECTION AMPLIFIER
OS
*
*
MAIN AMPLIFIER
–INPUT
+INPUT
V
DD
47
2
A
3
+
+

GENERAL DESCRIPTION

The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and LTC1052 require user-supplied, external offset compensa­tion storage capacitors. External capacitors are not re- quired with the TC911. Just as easy to use as the conven­tional OP07 type amplifier, the TC911 significantly reduces offset voltage errors. Pinout matches the OP07/741/7650 8-pin mini-DIP configuration.
Several system benefits arise by eliminating the exter­nal chopper capacitors: lower system parts count, reduced assembly time and cost, greater system reliability, reduced PC board layout effort and greater board area utilization. Space savings can be significant in multiple-amplifier de­signs.
Electrical specifications include 15µV maximum offset voltage, 0.15µV/°C maximum offset voltage temperature coefficient. Offset voltage error is five times lower than the premium OP07E bipolar device. The TC911 improves off­set drift performance by eight times.
The TC911 operates from dual or single power sup­plies. Supply current is typically 350µA. Single 4.5V to 16V supply operation is possible, making single 9V battery operation possible. The TC911 is available in 2 package types: 8-pin plastic DIP and SOIC.

PIN CONFIGURATION (SOIC and DIP)

1
NC
2
– INPUT
3
+ INPUT
A
B
B
+
TC911ACPA TC911BCPA
V
4
SS
INTERNAL
OSCILLATOR
(f 200 Hz)
OSC
TC911
LOW IMPEDANCE OUTPUT BUFFER
1
8
NC V
7
DD
6
OUTPUT NC
5
NC = NO INTERNAL CONNECTION
6
OUTPUT
NC – INPUT + INPUT
V
2 3
SS
4
TC911A TC911B
TC911ACOA TC911BCOA
8 7 6 5
NC V
DD
OUTPUT NC
1
2
3
4
5
6
7
*
NOTE: Internal capacitors. No external capacitors required.
TELCOM SEMICONDUCTOR, INC.
8
TC911/A/B-7 9/11/96
3-263
TC911A TC911B
AUTO-ZEROED MONOLITHIC
OPERA TIONAL AMPLIFIERS
ABSOLUTE MAXIMUM RATINGS*
Package Power Dissipation (TA = 70°C)
Plastic DIP ......................................................730mW
Total Supply Voltage (VDD to VSS) ........................... +18V
Input Voltage ........................ (V
+ 0.3V) to (VSS – 0.3V)
DD
Current into Any Pin .................................................10mA
While Operating................................................100µA
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Operating Temperature Range
Plastic SOIC ...................................................470mW
*Static-sensitive device. Unused devices should be stored in conductive material. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
C Device ................................................ 0°C to +70°C
ELECTRICAL CHARACTERISTICS: V
= ±5V, TA = +25°C, unless otherwise indicated.
S
TC911A TC911B
Symbol Parameter Test Conditions
V
OS
TCV
I
B
IOSAverage Input TA = +25°C 5 20 10 40 pA
e
N
CMRR Common-Mode VSS VCM VDD – 2.2 110 116 105 110 dB
CMVR Common-Mode V
A
OL
V
OUT
BW Closed Loop Closed Loop Gain = +1 1.5 1.5 MHz
SR Slew Rate RL = 10 k, CL = 50 pF 2.5 2.5 V/µs PSRR Power Supply ±3.3V to ±5.5V 112 105 dB
V
S
I
S
NOTES: 1. Characterized; not 100% tested.
Input Offset Voltage TA = +25°C 5 15 15 30 µV Average Temperature 0°C TA +70°C 0.05 0.15 0.1 0.25 µV/°C
OS
Coefficient of Input –25°C T
+85°C 0.05 0.15 0.1 0.25 µV/°C
A
Offset Voltage (Note 1) Average Input Bias TA = +25°C 70 120 pA
Current 0°C T
+70°C—3—4nA
A
–25°C TA +85°C——4 ——6nA
Offset Current TA = +85°C—11nA Input Voltage Noise 0.1 to 1 Hz, RS 100 0.65 0.65 µV
0.1 to 10 Hz, RS 100 —11— — 11—µV
Rejection Ratio
Voltage Range Open-Loop Voltage
RL = 10 k, V
OUT
= ±4V
Gain Output Voltage Swing RL = 10 k VSS + 0.3 VDD – 0.9 VSS + 0.3 VDD – 0.9 V
Bandwidth
Rejection Ratio Operating Supply Split Supply ±3.3 ± 8 ±3.3 ±8V
Voltage Range Single Supply 6.5 16 6.5 16 V Quiescent Supply VS = ±5V 350 600 800 µA
Current
Min Typ Max Min Typ Max Unit
P-P P-P
SS
—V
115 120 110 120 dB
– 2 V
DD
SS
—V
DD
– 2 V
3-264
TELCOM SEMICONDUCTOR, INC.
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