TelCom Semiconductor Inc TC7660HEPA, TC7660HEOA, TC7660HCPA, TC7660HCOA Datasheet

HIGH FREQUENCY 7660 DC-TO-DC VOLT AGE CONVERTER
EVALUATION
KIT
AVAILABLE

FEATURES

Pin Compatible with 7660, High Frequency
Low Cost, Two Low Value External Capacitors
Required ........................................................ (1.0µF)
Converts +5V Logic Supply to ±5V System
Wide Input Voltage Range ....................1.5V to 10V
Voltage Conversion........................................ 99.7%
Power Efficiency................................................ 85%
Available in 8-Pin SOIC and 8-Pin PDIP Packages

FUNCTIONAL BLOCK DIAGRAM

+
V+CAP
82
OSC
7
RC
OSCILLATOR
6
LV
INTERNAL VOLTAGE
REGULATOR
TC7660H
÷ 2
VOLTAGE–
LEVEL
TRANSLATOR
3
GND
LOGIC
NETWORK
4
CAP
5
V
OUT

GENERAL DESCRIPTION

The TC7660H is a pin-compatible, high frequency up­grade to the Industry standard TC7660 charge pump volt­age converter. It converts a +1.5V to +10V input to a corresponding – 1.5V to -10V output using only two low-cost capacitors, eliminating inductors and their associated cost, size and EMI.
The TC7660H operates at a frequency of 120kHz (ver­sus 10kHz for the TC7660), allowing the use of 1.0µF external capacitors. Oscillator frequency can be reduced (for lower supply current applications) by connecting an external capacitor from OSC to ground.
The TC7660H is available in 8-pin DIP and small outline (SOIC) packages in commercial and extended temperature ranges.

ORDERING INFORMATION

Part No. Package Range
TC7660HCOA 8-Pin SOIC 0°C to +70°C TC7660HCPA 8-Pin Plastic DIP 0°C to +70°C TC7660HEOA 8-Pin SOIC – 40°C to +85°C TC7660HEPA 8-Pin Plastic DIP – 40°C to +85°C
TC7660EV Evaluation Kit for
Charge Pump Family
1
TC7660H
2
3
4
Temperature
5

PIN CONFIGURATION (DIP and SOIC)

NC
1
+
CAP
2 3 4
1 2 3 4
TC7660HCPA TC7660HEPA
TC7660HCOA TC7660HEOA
TELCOM SEMICONDUCTOR, INC.
GND
CAP
NC
+
CAP
GND
CAP
NC = NO INTERNAL CONNECTION
+
8
V
OSC
7
LOW
6
VOLTAGE (LV)
V
5
OUT
+
V
8
OSC
7
LOW
6
VOLTAGE (LV)
5
V
OUT
6
7
8
TC7660H-2 10/1/96
4-63
TC7660H
HIGH FREQUENCY 7660 DC-TO-DC
VOLTAGE CONVERTER
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ...................................................... +10.5V
LV and OSC Inputs
Voltage (Note 1) ........................ – 0.3V to (V+ + 0.3V)
for V+ < 5.5V
(V+ – 5.5V) to (V+ + 0.3V)
for V+ > 5.5V
Current Into LV (Note 1)......................20µA for V+ > 3.5V
Output Short Duration (V
5.5V) .........Continuous
SUPPLY
Power Dissipation (TA 70°C) (Note 2)
SOIC...............................................................470mW
Plastic DIP ......................................................730mW
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with V
Operating Temperature Range
C Suffix ..................................................0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
+
= 5V, CI = C2 = 1µF,C
OSC
= 0,
Test Circuit (Figure 1), unless otherwise indicated.
Symbol Parameter Test Conditions Min Typ Max Unit
+
I
+
V
H
+
V
L
R
OUT
F
OSC
P
EFF
V
EFF
NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no
Supply Current RL = 0.46 1.0 mA Supply Voltage Range, High Min TA Max, 3 10 V
RL = 5k, LV Open
Supply Voltage Range, Low Min TA Max, 1.5 3.5 V
RL = 5k, LV to GND
Output Source Resistance I
= 20mA, TA = 25°C 55 80
OUT
I
= 20mA, 0°C TA +70°C—95
OUT
(C Device) I
= 20mA, – 40°C TA +85°C 110
OUT
(E Device)
+
V
= 2V, I
= 3mA, LV to GND 150 250
OUT
0°C TA +70°C Oscillator Frequency 120 kHz Power Efficiency I
= 10mA, Min TA ≤ Max 81 85 %
OUT
Voltage Efficiency RL = 99 99.7 %
inputs from sources operating from external supplies be applied prior to "power up" of the TC7660H.
2. Derate linearly above 50°C by 5.5 mW/°C.
4-64
TELCOM SEMICONDUCTOR, INC.
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