TelCom Semiconductor Inc TC682EPA, TC682EOA, TC682COA, TC682CPA Datasheet
INVERTING VOL T AGE DOUBLER
EVALUATION
KIT
AVAILABLE
FEATURES
1
TC682
2
GENERAL DESCRIPTION
■ 99.9% Voltage Conversion Efficiency
■ 92% Power Conversion Efficiency
■ Wide Input Voltage Range ...............+2.4V to +5.5V
■ Only 3 External Capacitors Required
■ 185µA Supply Current
■ Space-Saving 8-Pin SOIC and 8-Pin Plastic DIP
Packages
APPLICATIONS
■ – 10V from +5V Logic Supply
■ – 6V from a Single 3V Lithium Cell
■ Portable Handheld Instruments
■ Cellular Phones
■ LCD Display Bias Generator
■ Panel Meters
■ Operational Amplifier Power Supplies
TYPICAL OPERATING CIRCUIT
+2.4V < VIN < +5.5V
V
IN
The TC682 is a CMOS charge pump converter that
provides an inverted doubled output from a single positive
supply. An on-board 12kHz (typical) oscillator provides the
clock and only 3 external capacitors are required for full
circuit implementation.
Low output source impedance (typically 140Ω), provides output current up to 10mA. The TC682 features low
quiescent current and high efficiency, making it the ideal
choice for a wide variety of applications that require a
negative voltage derived from a single positive supply (for
example: generation of – 6V from a 3V lithium cell or – 10V
generated from a +5V logic supply).
The minimum external parts count and small physical
size of the TC682 make it useful in many medium-current,
dual voltage analog power supplies.
ORDERING INFORMATION
Part No. Package Temp. Range
T
C682COA 8-Pin SOIC 0°C to +70°C
TC682CPA 8-Pin Plastic DIP 0°C to +70°C
T
C682EOA 8-Pin SOIC – 40°C to +85°C
TC682EPA 8-Pin Plastic DIP – 40°C to +85°C
TC7660EV Evaluation Kit for
Charge Pump Family
PIN CONFIGURATIONS
3
4
5
GND
TELCOM SEMICONDUCTOR, INC.
V
IN
+
+
C
1
–
+
C
2
–
C
1
–
C
1
TC682
+
C
2
–
2
GND
V
OUT
C
All Caps = 3.3µF
V = – (2 x V )
OUT
C
OUT
+
V
IN
OUT
V
V
C
1
C
2
C
2
OUT
C
C
C
OUT
–
+
–
–
1
+
2
–
2
8-Pin DIP
6
18
27
36
45
18
27
36
45
TC682CPA
TC682EPA
8-Pin SOIC
TC682COA
TC682EOA
NC
+
C
1
V
IN
GND
NC
C
1
V
IN
GND
7
+
8
TC682-2 8/21/96
4-21
V
GND
GND
C
2
+
C
2
–
R
L
C
1
+
C
1
C
2
C
1
–
IN
V
IN
V
OUT
C
All Caps = 3.3µF
OUT
TC682
(+5V)
V
OUT
–
–
6
7
1
2
3
5
4
–
+
+
–
+
TC682
INVERTING VOL T AGE DOUBLER
ABSOLUTE MAXIMUM RATINGS*
VIN.......................................................................... +5.8V
VIN dV/dT ............................................................. 1V/µsec
V
......................................................................– 11.6V
OUT
V
Short-Circuit Duration ............................Continuous
OUT
*This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to Absolute Maximum Rating
Conditions for extended periods may affect device reliability.
Power Dissipation (TA ≤ 70°C)
Plastic DIP
...........................................................
730mW
SOIC...............................................................470mW
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range, V
= +5V, test circuit Figure 1,
IN
unless otherwise indicated.
Symbol Parameter Test Conditions Min Typ Max Unit
V
IN
I
IN
R
OUT
F
OSC
P
EFF
V
OUT EFF
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use
of any circuits described herein and makes no representations that they are free from patent infringement.
Supply Voltage Range RL = 2kΩ 2.4 — 5.5 V
Supply Current RL = ∞, TA = 25°C — 185 300 µA
RL = ∞ — — 400
V
Source Resistance I
OUT
Source Resistance I
–
= 10mA, TA = 25°C — 140 180 Ω
L
–
= 10mA — — 230
L
–
I
= 5mA, VIN = 2.8V — 170 320
L
Oscillator Frequency — 12 — kHz
Power Efficiency RL = 2kΩ, TA = 25°C9092—%
Voltage Conversion Efficiency V
, RL = ∞ 99 99.9 — %
OUT
PIN DESCRIPTION
Pin No.
8-Pin DIP/SOIC Symbol Description
–
Input. Capacitor C1 negative
1
terminal.
+
Input. Capacitor C2 positive
2
terminal.
–
Input. Capacitor C2 negative
2
terminal
OUT
Output. Negative output voltage
(– 2VIN)
Input. Power supply voltage.
IN
+
Input. Capacitor C1 positive
1
terminal
4-22
1C
2C
3C
4V
5 GND Input. Device ground.
6V
7C
8 N/C No Connection
Figure 1. TC682 Test Circuit
TELCOM SEMICONDUCTOR, INC.
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