TelCom Semiconductor Inc TC660EPA, TC660EOA, TC660CPA, TC660COA Datasheet

100mA CHARGE PUMP DC-TO-DC VOLT AGE CONVERTER

EVALUATION

KIT

AVAILABLE

FEATURES

■ Pin Compatible with TC7660

■ High Output Current ..................................... 100mA

■ Converts (+1.5V to 5.5V) to (– 1.5V to – 5.5V)

■ Power Efficiency @100mA......................... 88% typ

■ Low Power Consumption ................200µA @ 5 V

■ Low Cost and Easy to Use

— Only Two External Capacitors Required

■ Selectable Oscillator Frequency ....... 10kHz/90kHz

■ ESD Protection ...................................................4kV

APPLICATIONS

■ Laptop Computers

■ µP Based Controllers

■ Process Instrumentation

■ Automotive Instruments

PIN CONFIGURATION (DIP and SOIC)

GENERAL DESCRIPTION

The TC660 DC-to-DC voltage converter generates a
negative voltage supply, that can support a 100mA maxi­mum load, from a positive voltage input of 1.5V to 5.5V. Only
two external capacitors are required.

IN

Power supply voltage is stored on an undedicated
capacitor then inverted and transferred to an output reser­voir capacitor. The on-board oscillator normally runs at a
frequency of 10kHz with V+ at 5V. This frequency can be
lowered by the addition of an external capacitor from OSC
(pin 7) to ground, or raised to 90kHz by connecting the
frequency control pin (FC) to V+, in order to optimize capaci­tor size, quiescent current, and output voltage ripple
frequency. Operation using input voltage between 1.5V and

3.0V is accommodated by grounding the LV input (pin 6).
Operation at higher input voltages (3.0V to 5.5V) is accom­plished by leaving LV open.

The TC660 open circuit output voltage is within 0.1% of
the input voltage with the output open-circuited. Power
conversion efficiency is 98% when output load is between
2mA and 5mA.

1

TC660

2

3

4

+

8

V

7

OSC

6

LV

5

V

OUT

FC

CAP

GND

CAP

CAP

GND

CAP

FC

1

+

2
3

–

4

TC660CPA
TC660EPA

FUNCTIONAL BLOCK DIAGRAM

1

FC

OSC

LV

7

6

RC

OSCILLATOR

TC660

1

+

2

TC660COA

3

TC660EOA

–

4

INTERNAL
VOLTAGE

REGULATOR

÷ 2

+

8

V

7

OSC

6

LV

5

V

OUT

VOLTAGE–

LEVEL

TRANSLATOR

ORDERING INFORMATION

Part No. Package Temp. Range

TC660COA 8-Pin SOIC 0°C to +70°C
TC660CPA 8-Pin Plastic DIP 0°C to +70°C
TC660EOA 8-Pin SOIC – 40°C to +85°C
TC660EPA 8-Pin Plastic DIP – 40°C to +85°C

TC7660EV Evaluation Kit for

Charge Pump Family

+

V+CAP

82

4

–

CAP

5

V

OUT

LOGIC

NETWORK

5

6

7

TELCOM SEMICONDUCTOR, INC.

3

GND

8

TC660-2 9/10/96

4-5

TC660

100mA CHARGE PUMP DC-TO-DC

VOLTAGE CONVERTER

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ........................................................... +6V

LV, FC, OSC Input

Voltage (Note 1) .......................V

Current Into LV (Note 1)...................... 20 µA for V+ >3.5V

Output Short Duration (V

SUPPLY

– 0.3V to (V+ +0.3V)

OUT

≤ 5.5V) (Note 3) ..10 Sec

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

Power Dissipation (Note 2) (TA ≤ 70°C)

SOIC...............................................................470mW

Plastic DIP ......................................................730mW

Operating Temperature Range

C Suffix ..................................................0°C to +70°C

E Suffix .............................................– 40°C to +85°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,

V+ = 5V, C
(Figure 1), unless otherwise indicated.

Symbol Parameter Test Conditions Min Typ Max Unit

+

I

+

V

R

OUT

I

OUT

F

OSC

I

OSC

P

EFF

V

OUT EFF

NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

Supply Current RL = ∞

FC pin = OPEN or GND — 200 500 µA
FC pin = V

Supply Voltage Range LV = HIGH, RL = 1 kΩ 3 — 5.5 V

LV = GND, RL = 1 kΩ 1.5 — 5.5

LV = OUT, RL = 1 kΩ (Figure 9) 2.5 — 5.5
Output Source Resistance I
Output Current V

= 100mA — 6.5 10 Ω

OUT

< – 4V 100 — — mA

OUT

Oscillator Frequency Pin 7 open; Pin 1 open or GND — 10 — kHz

Pin 1 = V

+

Input Current Pin 1 open —

Pin 1 = V

+

Power Efficiency (Note 4) RL = 1 kΩ connected between V+ & V

= 500Ω connected between V

R

L

IL = 100mA to GND — 88 —
Voltage Conversion Efficiency RL = ∞ 99 99.9 — %

inputs from sources operating from external supplies be applied prior to "power up" of the TC660.

2. Derate linearly above 50°C by 5.5 mW/°C.

3. To prevent damaging the device, do not short V

4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2.

OUT

to V+.

= Open, C1, C2 = 150µF, FC = Open, Test Circuit

OSC

+

—1 3mA

—90—

+

1.1 — µA

—

OUT

& GND 92 96 —

OUT

96 98 — %

+

5—

4-6

TELCOM SEMICONDUCTOR, INC.

100mA CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER

TYPICAL CHARACTERISTICS

1

TC660

All curves are generated using the test circuit of Figure 1 with V+ = 5V, LV = GND, FC = open, and TA = +25°C, unless
otherwise noted.

1)

600

500

400

300

200

SUPPLY CURRENT (µA)

100

4)

2.0

1.6

1.2

0.8

0.4

OUTPUT VOLTAGE DROP

FROM SUPPLY VOLTAGE (V)

Supply Current vs.

Supply Voltage

DOUBLER MODE

LV = OUT

LV = OPEN

0

1.5 2.52.0 3.5 5.04.54.03.0 5.5

LV = GND

SUPPLY VOLTAGE (V)

Output Voltage Drop

vs. Load Current

V+ = 3.5V

V+ = 1.5V

V+ = 2.5V

0

04020 1008060

LOAD CURRENT (mA)

V+ = 4.5V

V+ = 5.5V

2) 3)

Supply Current vs.

Oscillator Frequency

10,000

1000

100

SUPPLY CURRENT (µA)

5)

DOUBLER MODE

10

1

0.01 0.1 1 10 100

OSCILLATOR FREQUENCY (kHz)

INVERTING MODE

Output Voltage vs.

Oscillator Frequency

-5.0

I

= 10mA

-4.5
I

= 1mA

LOAD

-4.0

-3.5

OUTPUT VOLTAGE (V)

-3.0

0.1 0.2 0.4 1 4 10 20 402 100

OSCILLATOR FREQUENCY (kHz)

LOAD

I

LOAD

= 80mA

Efficiency vs.
Load Current

100

92

84

76

EFFICIENCY (%)

68

60

04020 1008060

6)

V+ = 3.5V

V+ = 2.5V

V+ = 1.5V

LOAD CURRENT (mA)

Efficiency vs.

Oscillator Frequency

100

96
92

88
84
80
76
72

POWER EFFICIENCY (%)

68
64
60

0.1 0.2 0.4 1 4 10 20 402 100

OSCILLATOR FREQUENCY (kHz)

I

LOAD

I

LOAD

= 1mA

V+ = 5.5V

V+ = 4.5V

= 10mA

I

LOAD

80mA

=

2

3

4

5

6

Output Source Resistance

7)
vs. Supply Voltage

15

12

9

6

3

OUTPUT SOURCE RESISTANCE (Ω)

0

0.5 1.51.0 2.0 3.0 3.5 4.02.5 5.55.04.5

SUPPLY VOLTAGE (V)

TELCOM SEMICONDUCTOR, INC.

Output Source Resistance

8)
vs. Temperature

16

14

12

10

8

6

OUTPUT SOURCE RESISTANCE (Ω)

4

V+ = 1.5VDC

V+ = 3VDC

0

-20-40

20 40

TEMPERATURE (°C)

V+ = 5VDC

8060 100

9)

Oscillator Frequency

vs. Supply Voltage

12

10

8

6

4

2

OSCILLATOR FREQUENCY (kHz)

0

1.0 2.01.5 2.5 3.0 3.5 4.0 4.5 5.0 5.5

LV GROUNDED

FC = OPEN, OSC = OPEN

SUPPLY VOLTAGE (V)

LV OPEN

7

8

4-7