TelCom Semiconductor Inc TC4626COE, TC4627COE, TC4626MJA, TC4626EPA, TC4626EOE Datasheet

POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

FEATURES

■ Power driver with on Board Voltage Booster

■ Low IDD ......................................................... < 4 mA

■ Small Package ........................................ 8-Pin PDIP

■ Under-Voltage Circuitry

■ Fast Rise-Fall Time..................< 40nsec @ 1000pF

■ Below-Rail Input Protection

APPLICATIONS

■ Raises 5V to drive higher-Vgs (ON) MOSFETs

■ Eliminates one system power supply

PIN CONFIGURATIONS

8-Pin Plastic DIP
/CerDIP

–

C1

1

+

2

C1

TC4626

3

C2

TC4627

4

GND

8
7
6
5

V

DD

IN
V

BOOST

OUT

16-Pin SOIC (Wide)

–

C1

NC

C1

NC

C2
NC
NC

GND

1
2

+

3
4

TC4626

5

TC4627

6
7
8

16
15
14
13
12
11
10

9

V

DD

NC
NC
IN
NC
V

BOOST

NC
OUT

GENERAL DESCRIPTION

The TC4626/4627 are single CMOS high speed drivers
with an on-board voltage boost circuit. These parts work with
an input supply voltage from 4 to 6 volts. The internal voltage
booster will produce a V
VIN. This V

is not regulated, so its voltage is dependent

BOOST

on the input VDD voltage and output drive loading require­ments. An internal undervoltage lockout circuit keeps the
output in a low state when V
Output is enabled when V

ORDERING INFORMATION

Part No. Package Temp. Range

TC4626COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4626CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4626EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4626EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4626MJA 8-Pin CerDIP – 0°C to +70°C

TC4627COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4627CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4627EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4627EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4627MJA 8-Pin CerDIP – 0°C to +70°C

potential up to 12 volts above

BOOST

drops below 7.8 volts.

BOOST

is above 11.3 volts.

BOOST

1

TC4626
TC4627

2

3

4

5

FUNCTIONAL BLOCK DIAGRAM

DD

IN

2

1

3

V = 2 x V

8

7

4

DD

+

EXT

C

1

+

EXT

C

2

NOTE: Pin numbers correspond to 8-pin package

C1+

C1-

C2

V

GND

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VOLTAGE
BOOSTER

CLOCK

V

BOOST

NON-

INVERTING

4627

INVERTING

4626

(UNREGULATED 3 x VDD)

UV LOCK

5

6

EXT

+

C

3

OUTPUT

6

7

8

TC4626/7-7 10/21/96

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TC4626
TC4627

POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

ABSOLUTE MAXIMUM RATINGS

Package Power Dissipation (TA ≤ 70°C)

PDIP .................................................................730mW

CerDIP ..............................................................800mW

SOIC .................................................................760mW

Derating Factor

PDIP ....................................... 5.6 mW/°C Above 36°C

CerDIP ........................................................ 6.0 mW/°C

ELECTRICAL CHARACTERISTICS: T

= 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.

A

Supply Voltage ...........................................................6.2V

Input Voltage, Any Terminal......VS + 0.3V to GND – 0.3V

Operating Temperature: M Version ......– 55°C to +125°C

E Version.........– 40°C to +85°C

C Version..............0°C to +70°C

Maximum Chip Temperature.................................+150°C

Storage Temperature ............................– 65°C to +150°C

Lead Temperature (10 sec)...................................+300°C

Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input

V

IH

V

IL

I

IN

Logic 1, Input Voltage 2.4 — — V
Logic 0, Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DRIVE

– 1 — 1 µA

Driver Output

V

OH

V

OL

R

O

R

O

I

PK

High Output Voltage V

– 0.025 — — V

BOOST

Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 5V — 10 15 Ω

OUT

= 10 mA, VDD = 5V — 8 10 Ω

OUT

Peak Output Current — 1.5 — A

Switching Time

t
t
t
t
F

R
F
D1
D2

MAX

Rise Time Test Figure 1,2 — 33 40 nsec
Fall Time Test Figure 1,2 — 27 35 nsec
Delay Time Test Figure 1,2 — 35 45 nsec
Delay Time Test Figure 1,2 — 45 55 nsec
Maximum Switching Frequency Test Figure 1 1.0 — — MHz

VDD = 5V, V

BOOST

> 8.5V

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV Undervoltage Threshold 7.0 7.8 8.5 V
@ V

BOOST

V

START

@ V

BOOST

V

BOOST

Voltage Tripler Output IL = 10 mA, VDD = 5V — 300 400 Ω
Source Resistance

Voltage Doubler Output — 120 200 Ω
Source Resistance

Oscillator Frequency 12 — 28 kHz
Oscillator Amplitude R

= 10kΩ 4.5 — 10 V

LOAD

Measured at C1-

Start Up Voltage 10.5 11.3 12 V

@V

= 5V No Load 14.6 — — V

DD

Power Supply

I
V

DD

DD

Power Supply Current VIN = LOW or HIGH — — 2.5 mA
Supply Voltage 4.0 — 6.0 V

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POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

1

TC4626
TC4627

ELECTRICAL CHARACTERISTICS: T

unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input

V

IH

V

IL

I

IN

Driver Output

V

OH

V

OL

R

O

R

O

I

PK

Switching Time

t

R

t

F

t

D1

t

D2

F

MAX

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV Undervoltage Threshold 7.0 7.8 8.5 V
@ V

BOOST

V

START

@ V

BOOST

V

BOOST

Power Supply

I

DD

V

DD

Logic 1, Input Voltage 2.4 — — V
Logic 0, Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

High Output Voltage V
Low Output Voltage — — 0.025 V
Output Resistance, High I

Output Resistance, Low I

Peak Output Current — 1.5 — A

Rise Time Test Figure 1,2 — — 55 nsec
Fall Time Test Figure 1,2 — — 50 nsec
Delay Time Test Figure 1,2 — — 60 nsec
Delay Time Test Figure 1,2 — — 70 nsec
Maximum Switching Frequency Test Figure 1 750 — — kHz

Voltage Boost Output IL = 10 mA, VDD = 5V — 400 500 Ω
Source Resistance

Voltage Doubler Output — 170 300 Ω
Source Resistance

Oscillator Frequency 5 — 50 kHz
Oscillator Amplitude R

Measured at C1-

Start Up Voltage 10.5 11.3 12 V

@V

= 5V No Load 14.6 — — V

DD

Power Supply Current VIN = LOW or HIGH — — 4 mA
Supply Voltage 4.0 — 6.0 V

= Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF

A

BOOST

= 10 mA, VDD = 5V

OUT

C & E Version (T
M Version (TA = 125°C) — 15 25

= 10 mA, VDD = 5V

OUT

C & E Version (T
M Version (TA = 125°C) — 10 15

VDD = 5V, V

= 10kΩ 4.5 — 10 V

LOAD

= 70°C or 85°C) — 15 20 Ω

A

= 70°C or 85°C) — 10 13 Ω

A

> 8.5V

BOOST

– 10 — 10 µA

– 0.025 — — V

DRIVE

2

3

4

5

6

7

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TC4626
TC4627

SWITCHING TIME TEST CIRCUITS

POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

V

BOOST

C

6

INPUT

C

1

10 µF

C

2

10 µF

+5V

INPUT*

0V

V

BOOST

OUTPUT

0V

* 100kHz SQUARE WAVE, tr = tf < 10nsec

7

2

C1+

C1-

1

38

TC4626

C

2

10%

t

D1

t

90%

10%

10 µF

4

F

3

5

0.1 µF
Ceramic

OUTPUT

CL = 1000 pF

V

= 5V

DD

90%

t

D2

t

R

10%

90%

V

BOOST

6

2

1

3

t

7

D1

C1+

C1-

C

2

90%

TC4627

4

10%

t

R

INPUT

C

1

10 µF

C

2

10 µF

+5V

INPUT*

0V

V

BOOST

OUTPUT

0V

* 100kHz SQUARE WAVE, tr = tf < 10nsec

10%

C

3

10 µF

5

CL = 1000 pF

8

90%

t

D2

0.1µF
Ceramic

OUTPUT

V

DD

90%

10%

= 5V

t

F

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Figure 1. Inverting Driver Switching Time

Figure 2. Non-Inverting Driver Switching Time

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POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

PIN 2

VOLTAGE

PIN 1

VOLTAGE

3 x V

DD

2 x V

DD

V

DD

2 x V

DD

V

DD

0

ON
OFF

S1

ON
OFF

S2

ON

OFF

S3

BOOSTER FUNCTION

The voltage booster is an unregulated voltage tripler
circuit. The tripler consists of three sets of internal switches
and three external capacitors. S1a and S1b charge capaci­tor C1 to VDD potential. S2a and S2b add C1 potential to V

DD

input to charge C2 to 2 x VDD. S3a and S3b add C1 potential
to C2 to charge C3 to 3 x VDD. The position of the switches
is controlled by the internal 4 phase clock.

Pin 1 & 2 Waveforms

1

TC4626
TC4627

2

C3

C2

C1

(4 To 6V)

V

GND

3 x VDD, V

6

3

8

DD

2

1

4

2 x V

S1a

S1b

BOOST

DD

S2a

S2b

Voltage Booster

6

S3a

S3b

Position of Switches

3

4

5

6

7

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8

TC4626
TC4627

TYPICAL CHARACTERISTICS

POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

16

470pF

14

12

10

Hi (Volts)

8

OUT

6

V

4

2

0

5

14

12

10

8

TC4626 VOH vs. Frequency

VS = 5V, Temperature = –55°C

2200pF

500 1,000 1,500 2,000 2,500 3,000 3,500

1000pF

FREQUENCY (kHz)

TC4626 VOH vs. Frequency

VS = 5V, Temperature = 125°C

470pF

14

12

10

8

Hi (Volts)

6

OUT

V

4

2

0

10

100

80

60

TC4626 VOH vs. Frequency

VS = 5V, Temperature = 25°C

470pF

2200pF

500 1,000 1,500 2,000 2,500 3,000 3,500

1000pF

FREQUENCY (kHz)

Delay Time vs. Temperature

VS = 4V, C

LOAD

= 1000pF

Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz

TD2

Hi (Volts)

6

2200pF 1000pF

OUT

V

4

2

0

5

60

50

40

TD2

30

TR

Time (nsec)

20

TF

10

0

500 1,000 1,500 2,000 2,500 3,000 3,500

FREQUENCY (kHz)

Delay Time vs. Temperature

VS = 5V, C

TD1

LOAD

= 1000 pF

Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz

120

-40 -20 0 20

TEMPERATURE (°C)

40 60 80

100

Time (nsec)

TD1

40

TR

20

TF

0

50

40

TD2

30

TD1

20

Time (nsec)

TF

10

0

-40 -20 0 20

40 60 80

TEMPERATURE (°C)

Delay Time vs. Temperature

VS = 6V, C

TR

LOAD

= 1000 pF

Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz

-40 -20 0 20

TEMPERATURE (°C)

40 60 80

100

100

120

120

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POWER CMOS DRIVERS WITH VOL T AGE TRIPLER

TYPICAL CHARACTERISTICS (Cont.)

1

TC4626
TC4627

16

15

14
13
12

HI (Volts)

11

OUT

V

10

9
8

16

15

14
13
12

HI (Volts)

11

OUT

V

10

9
8

TC4626 VOH vs. Frequency

VS = 5V, Temperature = 25°C

2,200 pF

1

VS = 5V, Temperature = 125°C

1

34

2

FREQUENCY x 100 kHz

TC4626 VOH vs. Frequency

34

2

FREQUENCY x 100 kHz

567

1,000 pF

2,200 pF

567

470 pF

1,000 pF

8

9

470 pF

8

9

TC4626 VOH vs. Frequency

VS = 5V, Temperature = -55°C

16

15

14
13
12

HI (Volts)

11

OUT

V

10

9
8

100

1

34

2

FREQUENCY x 100 kHz

567

470 pF

1,000 pF

2,200 pF

8

9

100

2

3

4

5

100

6

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8

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