TelCom Semiconductor Inc TC4626COE, TC4627COE, TC4626MJA, TC4626EPA, TC4626EOE Datasheet
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POWER CMOS DRIVERS WITH VOL T AGE TRIPLER
FEATURES
■ Power driver with on Board Voltage Booster
■ Low IDD ......................................................... < 4 mA
■ Small Package ........................................ 8-Pin PDIP
■ Under-Voltage Circuitry
■ Fast Rise-Fall Time..................< 40nsec @ 1000pF
■ Below-Rail Input Protection
APPLICATIONS
■ Raises 5V to drive higher-Vgs (ON) MOSFETs
■ Eliminates one system power supply
PIN CONFIGURATIONS
8-Pin Plastic DIP
/CerDIP
–
C1
1
+
2
C1
TC4626
3
C2
TC4627
4
GND
8
7
6
5
V
DD
IN
V
BOOST
OUT
16-Pin SOIC (Wide)
–
C1
NC
C1
NC
C2
NC
NC
GND
1
2
+
3
4
TC4626
5
TC4627
6
7
8
16
15
14
13
12
11
10
9
V
DD
NC
NC
IN
NC
V
BOOST
NC
OUT
GENERAL DESCRIPTION
The TC4626/4627 are single CMOS high speed drivers
with an on-board voltage boost circuit. These parts work with
an input supply voltage from 4 to 6 volts. The internal voltage
booster will produce a V
VIN. This V
is not regulated, so its voltage is dependent
BOOST
on the input VDD voltage and output drive loading requirements. An internal undervoltage lockout circuit keeps the
output in a low state when V
Output is enabled when V
ORDERING INFORMATION
Part No. Package Temp. Range
TC4626COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4626CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4626EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4626EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4626MJA 8-Pin CerDIP – 0°C to +70°C
TC4627COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4627CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4627EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4627EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4627MJA 8-Pin CerDIP – 0°C to +70°C
potential up to 12 volts above
BOOST
drops below 7.8 volts.
BOOST
is above 11.3 volts.
BOOST
1
TC4626
TC4627
2
3
4
5
FUNCTIONAL BLOCK DIAGRAM
DD
IN
2
1
3
V = 2 x V
8
7
4
DD
+
EXT
C
1
+
EXT
C
2
NOTE: Pin numbers correspond to 8-pin package
C1+
C1-
C2
V
GND
TELCOM SEMICONDUCTOR, INC.
VOLTAGE
BOOSTER
CLOCK
V
BOOST
NON-
INVERTING
4627
INVERTING
4626
(UNREGULATED 3 x VDD)
UV LOCK
5
6
EXT
+
C
3
OUTPUT
6
7
8
TC4626/7-7 10/21/96
4-271
TC4626
TC4627
POWER CMOS DRIVERS WITH VOL T AGE TRIPLER
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (TA ≤ 70°C)
PDIP .................................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................760mW
Derating Factor
PDIP ....................................... 5.6 mW/°C Above 36°C
CerDIP ........................................................ 6.0 mW/°C
ELECTRICAL CHARACTERISTICS: T
= 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.
A
Supply Voltage ...........................................................6.2V
Input Voltage, Any Terminal......VS + 0.3V to GND – 0.3V
Operating Temperature: M Version ......– 55°C to +125°C
E Version.........– 40°C to +85°C
C Version..............0°C to +70°C
Maximum Chip Temperature.................................+150°C
Storage Temperature ............................– 65°C to +150°C
Lead Temperature (10 sec)...................................+300°C
Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input
V
IH
V
IL
I
IN
Logic 1, Input Voltage 2.4 — — V
Logic 0, Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V
DRIVE
– 1 — 1 µA
Driver Output
V
OH
V
OL
R
O
R
O
I
PK
High Output Voltage V
– 0.025 — — V
BOOST
Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I
= 10 mA, VDD = 5V — 10 15 Ω
OUT
= 10 mA, VDD = 5V — 8 10 Ω
OUT
Peak Output Current — 1.5 — A
Switching Time
t
t
t
t
F
R
F
D1
D2
MAX
Rise Time Test Figure 1,2 — 33 40 nsec
Fall Time Test Figure 1,2 — 27 35 nsec
Delay Time Test Figure 1,2 — 35 45 nsec
Delay Time Test Figure 1,2 — 45 55 nsec
Maximum Switching Frequency Test Figure 1 1.0 — — MHz
VDD = 5V, V
BOOST
> 8.5V
Voltage Booster
R
3
R
2
F
OSC
V
OSC
UV Undervoltage Threshold 7.0 7.8 8.5 V
@ V
BOOST
V
START
@ V
BOOST
V
BOOST
Voltage Tripler Output IL = 10 mA, VDD = 5V — 300 400 Ω
Source Resistance
Voltage Doubler Output — 120 200 Ω
Source Resistance
Oscillator Frequency 12 — 28 kHz
Oscillator Amplitude R
= 10kΩ 4.5 — 10 V
LOAD
Measured at C1-
Start Up Voltage 10.5 11.3 12 V
@V
= 5V No Load 14.6 — — V
DD
Power Supply
I
V
DD
DD
Power Supply Current VIN = LOW or HIGH — — 2.5 mA
Supply Voltage 4.0 — 6.0 V
4-272
TELCOM SEMICONDUCTOR, INC.
POWER CMOS DRIVERS WITH VOL T AGE TRIPLER
1
TC4626
TC4627
ELECTRICAL CHARACTERISTICS: T
unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input
V
IH
V
IL
I
IN
Driver Output
V
OH
V
OL
R
O
R
O
I
PK
Switching Time
t
R
t
F
t
D1
t
D2
F
MAX
Voltage Booster
R
3
R
2
F
OSC
V
OSC
UV Undervoltage Threshold 7.0 7.8 8.5 V
@ V
BOOST
V
START
@ V
BOOST
V
BOOST
Power Supply
I
DD
V
DD
Logic 1, Input Voltage 2.4 — — V
Logic 0, Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V
High Output Voltage V
Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I
Peak Output Current — 1.5 — A
Rise Time Test Figure 1,2 — — 55 nsec
Fall Time Test Figure 1,2 — — 50 nsec
Delay Time Test Figure 1,2 — — 60 nsec
Delay Time Test Figure 1,2 — — 70 nsec
Maximum Switching Frequency Test Figure 1 750 — — kHz
Voltage Boost Output IL = 10 mA, VDD = 5V — 400 500 Ω
Source Resistance
Voltage Doubler Output — 170 300 Ω
Source Resistance
Oscillator Frequency 5 — 50 kHz
Oscillator Amplitude R
Measured at C1-
Start Up Voltage 10.5 11.3 12 V
@V
= 5V No Load 14.6 — — V
DD
Power Supply Current VIN = LOW or HIGH — — 4 mA
Supply Voltage 4.0 — 6.0 V
= Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF
A
BOOST
= 10 mA, VDD = 5V
OUT
C & E Version (T
M Version (TA = 125°C) — 15 25
= 10 mA, VDD = 5V
OUT
C & E Version (T
M Version (TA = 125°C) — 10 15
VDD = 5V, V
= 10kΩ 4.5 — 10 V
LOAD
= 70°C or 85°C) — 15 20 Ω
A
= 70°C or 85°C) — 10 13 Ω
A
> 8.5V
BOOST
– 10 — 10 µA
– 0.025 — — V
DRIVE
2
3
4
5
6
7
TELCOM SEMICONDUCTOR, INC.
8
4-273
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