TelCom Semiconductor Inc TC4429MJA, TC4429IJA, TC4429EPA, TC4429EOA, TC4429CPA Datasheet

6A HIGH-SPEED MOSFET DRIVERS

FEATURES

1

TC4420
TC4429

2

GENERAL DESCRIPTION

■ Latch-Up Protected ............. Will Withstand > 1.5A

Reverse Output Current

■ Logic Input Will Withstand Negative Swing Up

to 5V

■ ESD Protected.....................................................4kV

■ Matched Rise and Fall Times ......................25nsec

■ High Peak Output Current ......................... 6A Peak

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load Drive .....................10,000 pF

■ Short Delay Time .................................. 55nsec Typ

■ Logic High Input, Any Voltage .............2.4V to V

DD

■ Low Supply Current With Logic "1" Input ... 450µA

■ Low Output Impedance .................................... 2.5Ω

■ Output Voltage Swing to Within 25mV of Ground

or V

DD

APPLICATIONS

■ Switch-Mode Power Supplies

■ Motor Controls

■ Pulse Transformer Driver

■ Class D Switching Amplifiers

FUNCTIONAL BLOCK DIAGRAM

V

DD

500 µA

300 mV

INPUT

GND

4.7V

EFFECTIVE

INPUT

C = 38 pF

PIN CONFIGURATIONS

TO-220-5

TC4420
TC4429

DD

V

GND

INPUT

Tab is
Connected
to V

GND

OUTPUT

INPUT

DD

8-Pin DIP

V

18

DD

27

TC4420

36

NC

TC4429

45

NOTE: Duplicate pins must

TC4429

TC4420

V

OUTPUT
OUTPUT
GNDGND

V

DD

both

be connected for proper operation.

18

DD

27

INPUT

36

NC

45

8-Pin SOIC

TC4420
TC4429

OUTPUT

V

DD

OUTPUT
OUTPUT
GNDGND

The TC4420/4429 are 6A (peak), single output MOSFET
drivers. The TC4429 is an inverting driver (pin-compatible
with the TC429), while the TC4420 is a non-inverting driver.
These drivers are fabricated in CMOS for lower power, more
efficient operation versus bipolar drivers.

Both devices have TTL-compatible inputs, which can be
driven as high as VDD + 0.3V or as low as – 5V without upset
or damage to the device. This eliminates the need for
external level shifting circuitry and its associated cost and
size. The output swing is rail-to-rail ensuring better drive
voltage margin, especially during power up/power down
sequencing. Propagational delay time is only 55nsec (typ.)
and the output rise and fall times are only 25nsec (typ.) into
2500pF across the usable power supply range.

Unlike other drivers, the TC4420/4429 are virtually
latch-up proof. They replace three or more discrete compo­nents saving PCB area, parts and improving overall system
reliability.

ORDERING INFORMATION

Temp.

Part No. Logic Package Range

TC4420CAT Noninverting 5-Pin TO-220 0°C to +70°C
TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C
TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C
TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C
TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C
TC4420IJA Noninverting 8-Pin CerDIP –25°C to +85°C
TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C

TC4429CAT Inverting 5-Pin TO-220 0°C to +70°C
TC4429COA Inverting 8-Pin SOIC 0°C to +70°C
TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C
TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C
TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C
TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C
TC4429MJA Inverting 8-Pin CerDIP – 55°C to +125°C

TC4420/9-6 10/18/96

3

4

5

6

7

8

TELCOM SEMICONDUCTOR, INC.

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TC4420
TC4429

ABSOLUTE MAXIMUM RATINGS*

6A HIGH-SPEED MOSFET DRIVERS

Supply Voltage ......................................................... +20V

Input Voltage ............................................... – 5V to > V

Input Current (VIN > VDD) .........................................50mA

Power Dissipation, TA ≤ 70°C

PDIP ...............................................................730mW

SOIC...............................................................470mW

CerDIP............................................................800mW

5-Pin TO-220 ......................................................1.6W

Package Power Dissipation (TA ≤ 70°C)

5-Pin TO-220 (With Heat Sink).........................1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/°C

SOIC............................................................. 4mW/°C

CerDIP....................................................... 6.4mW/°C

5-Pin TO-220 .............................................. 12mW/°C

Storage Temperature Range ................– 65°C to +150°C

Operating Temperature (Chip) ..............................+150°C

DD

Operating Temperature Range (Ambient)

C Version............................................... 0°C to +70°C

I Version ...........................................– 25°C to +85°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Lead Temperature (Soldering, 10 sec) .................+300°C

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

Thermal Impedances (To Case)

5-Pin TO-220 R

ELECTRICAL CHARACTERISTICS: T

........................................ 10°C/W

θJ-C

A

= +25°C with 4.5V ≤ V

≤ 18V, unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

VIN (Max) Input Voltage Range –5 — VDD+0.3 V
I

IN

Logic 1 High Input Voltage 2.4 1.8 — V
Logic 0 Low Input Voltage — 1.3 0.8 V

Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL
O
O

High Output Voltage See Figure 1 V

– 0.025 — — V

DD

Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 2.1 2.8 Ω

OUT

= 10 mA, VDD = 18V — 1.5 2.5 Ω

OUT

Peak Output Current VDD = 18V (See Figure 5) — 6 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µs

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 2500 pF — 25 35 nsec
Fall Time Figure 1, CL = 2500 pF — 25 35 nsec
Delay Time Figure 1 — 55 75 nsec
Delay Time Figure 1 — 55 75 nsec

Power Supply

I

S

V

DD

Power Supply Current VIN = 3V — 0.45 1.5 mA

VIN = 0V — 55 150 µA

Operating Input Voltage 4.5 — 18 V

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TELCOM SEMICONDUCTOR, INC.

6A HIGH-SPEED MOSFET DRIVERS

1

TC4420
TC4429

ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ V

DD

≤ 18V,

unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

VIN (Max) Input Voltage Range – 5 — V
I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V

+ 0.3 V

DD

Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V

OH

V

OL

R

O

R

O

High Output Voltage See Figure 1 V
Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 3 5 Ω

OUT

= 10 mA, VDD = 18V — 2.3 5 Ω

OUT

– 0.025 — — V

DD

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 2500 pF — 32 60 nsec
Fall Time Figure 1, CL = 2500 pF — 34 60 nsec
Delay Time Figure 1 — 50 100 nsec
Delay Time Figure 1 — 65 100 nsec

Power Supply

I

S

V

DD

Power Supply Current VIN = 3V — 0.45 3 mA

VIN = 0V — 60 400 µA

Operating Input Voltage 4.5 — 18 V

2

3

4

NOTE: 1. Switching times guaranteed by design.

V

= 18V

DD

18

0.1µF 0.1µF

INPUT

26

7

TC4429

54

1µF

+5V

INPUT

0V

OUTPUT

CL= 2500pF

Figure 1. Switching Time Test Circuit

+18V

OUTPUT

0V

10%

INPUT: 100 kHz, square wave,
t

t

90%

D1

t

F

10%

RISE = tFALL

≤ 10 nsec

t

D2

90%

10%

t

5

6

R

90%

7

TELCOM SEMICONDUCTOR, INC.

8

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TC4420
TC4429

TYPICAL CHARACTERISTICS

1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS

Rise Time vs. Supply Voltage

120

100

C = 10,000 pF

V (V)

DD

L

C = 4700 pF

L

C = 2200 pF

L

80

60

TIME (nsec)

40

20

0

579111315

Rise Time vs. Capacitive Load

100

80

60

V = 5V

40

TIME (nsec)

20

DD

V = 12V

DD

V = 18V

DD

Fall Time vs. Supply Voltage

100

80

C = 10,000 pF

DD

L

C = 4700 pF

L

C = 2200 pF

L

60

40

TIME (nsec)

20

0

579111315

V (V)

Fall Time vs. Capacitive Load

100

80

60

40

TIME (nsec)

20

V = 5V

DD

V = 12V

DD

V = 18V

DD

Rise and Fall Times vs. Temperature

50

C = 2200 pF

L

V = 18V

DD

40

30

20

TIME (nsec)

10

0

–60 –20 20 60 100

t

FALL

t

RISE

TA (°C)

140

Propagation Delay Time

vs. Supply Voltage

65

60

55

t

50

45

DELAY TIME (nsec)

40

D2

t

D1

10

1000

CAPACITIVE LOAD (pF)

Propagation Delay Time

vs. Temperature

50

C = 2200 pF

L

V = 18V

DD

40

t

D2

30

20

DELAY TIME (nsec)

10

0

–60 –20 20 60 100

4-228

t

D1

TA (°C)

10

10,000

1000

CAPACITIVE LOAD (pF)

Supply Current vs. Capacitive Load

84

V = 15V

DD

70

56

42

28

SUPPLY CURRENT (mA)

14

0

140

0 100 1000

CAPACITIVE LOAD (pF)

500 kHz

200 kHz

20 kHz

10,000

10,000

35

4 6 8 1012141618

SUPPLY VOLTAGE (V)

Supply Current vs. Frequency

1000

SUPPLY CURRENT (mA)

C = 2200 pF

L

100

10

0

0 100 1000

FREQUENCY (kHz)

TELCOM SEMICONDUCTOR, INC.

18V

10V
5V

10,000

1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

1

TC4420
TC4429

High-State Output Resistance

5

100 mA

4

10 mA

OUT

R ( )Ω

3

2

5913

71115

Effect of Input Amplitude

on Propagation Delay

200

LOAD = 2200 pF

160

120

INPUT 2.4V

80

DELAY TIME (nsec)

40

INPUT 3V

INPUT 5V

50 mA

V (V)

DD

INPUT 8V AND 10V

Low-State Output Resistance

2.5

2

OUT

R ( )Ω

1.5

1

5913

71115

Total nA•S Crossover*

4

-9

3

2

1

Crossover Area (A•S) x 10

V (V)

DD

100 mA

50 mA

10 mA

2

3

4

5

0

567 11 13

TELCOM SEMICONDUCTOR, INC.

8 9 10 12 14

V (V)

DD

15

0

567 11 13

*

8 9 10 12 14

SUPPLY VOLTAGE (V)

The values on this graph represent
the loss seen by the driver during
one complete cycle. For a single
transition, divide the value by 2.

15

6

7

8

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