TelCom Semiconductor Inc TC4426MJA, TC4426EPA, TC4426EOA, TC4428COA, TC4427CPA Datasheet

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

FEATURES

GENERAL DESCRIPTION

TC4426

1

TC4427
TC4428

2

■ High Peak Output Current ............................... 1.5A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability ........................ 1000 pF in 25 nsec

■ Short Delay Time ................................ <40nsec Typ

■ Consistent Delay Times With Changes in

Supply Voltage

■ Low Supply Current

— With Logic “1” Input .................................... 4mA

— With Logic “0” Input ................................. 400µA

■ Low Output Impedance ....................................... 7Ω

■ Latch-Up Protected: Will Withstand >0.5A

Reverse Current................................. Down to – 5V

■ Input Will Withstand Negative Inputs

■ ESD Protected.....................................................4kV

■ Pinout Same as TC426/TC427/TC428

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4426COA 8-Pin SOIC 0°C to +70°C
TC4426CPA 8-Pin Plastic DIP 0°C to +70°C
TC4426EOA 8-Pin SOIC – 40°C to +85°C
TC4426EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4426MJA 8-Pin CerDIP – 55°C to +125°C

TC4427COA 8-Pin SOIC 0°C to +70°C
TC4427CPA 8-Pin Plastic DIP 0°C to +70°C
TC4427EOA 8-Pin SOIC – 40°C to +85°C
TC4427EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4427MJA 8-Pin CerDIP – 55°C to +125°C

TC4428COA 8-Pin SOIC 0°C to +70°C
TC4428CPA 8-Pin Plastic DIP 0°C to +70°C
TC4428EOA 8-Pin SOIC – 40°C to +85°C
TC4428EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4428MJA 8-Pin CerDIP – 55°C to +125°C

The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.

As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000 pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.

Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
compatible with the TC4426/27/28.

FUNCTIONAL BLOCK DIAGRAM

V

INVERTING

OUTPUTS

300 mV

NONINVERTING

OUTPUTS

INPUT

GND

EFFECTIVE INPUT

C = 12 pF

NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.

2. TC4428 has one inverting and one noninverting driver.

3. Ground any unused driver input.

4.7V

TC4426/TC4427/TC4428

DD

OUTPUT

3

4

5

6

7

TELCOM SEMICONDUCTOR, INC.

8

TC4426/7/8-8 10/21/96

4-245

TC4426
TC4427
TC4428

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B. (VDD + 0.3V) to (GND – 5.0V)

Maximum Chip Temperature................................. +150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

PIN CONFIGURATIONS

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 45°C/W

θJ-C

1

NC

2

IN A

GND

IN B

NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.

TC4426

3
4

2,4 7,5

INVERTING

8
7
6
5

NC
OUT A

V

DD

OUT B

NC

IN A

GND

IN B

1
2
3
4

2,4 7,5

NONINVERTING

Operating Temperature Range

C Version............................................... 0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

NC

8

OUT A

7

V

6

DD

5

OUT B

7

5

TC4427

8
7
6
5

NC
OUT A
V

DD

OUT B

NC

IN A

GND

IN B

1
2

TC4428

3
4

2

4

DIFFERENTIAL

ELECTRICAL CHARACTERISTICS: T

= +25°C with 4.5V ≤ V

A

≤ 18V, unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 1 — 1 µA

Output

V
V
R
I

PK

I

REV

OH
OL
O

High Output Voltage VDD – 0.025 — — V
Low Output Voltage — — 0.025 V
Output Resistance VDD = 18V, IO = 10 mA — 7 10 Ω
Peak Output Current Duty Cycle ≤ 2%, t ≤ 30 µsec — 1.5 — A
Latch-Up Protection Duty Cycle ≤ 2% > 0.5 — — A

Withstand Reverse Current t ≤ 30 µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 — 19 30 nsec
Fall Time Figure 1 — 19 30 nsec
Delay Time Figure 1 — 20 30 nsec
Delay Time Figure 1 — 40 50 nsec

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) — — 4.5 mA

VIN = 0V (Both Inputs) — — 0.4 mA

4-246

TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

1

TC4426
TC4427
TC4428

ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature

range with 4.5V ≤ V

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

Output

V
V
R
I

PK

I

REV

OH
OL
O

High Output Voltage V
Low Output Voltage — — 0.025 V
Output Resistance VDD = 18V, IO = 10 mA — 9 12 Ω
Peak Output Current Duty Cycle ≤ 2%, t ≤ 300µsec — 1.5 — A
Latch-Up Protection Duty Cycle≤ 2% > 0.5 — — A

Withstand Reverse Current t ≤ 300µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 — — 40 nsec
Fall Time Figure 1 — — 40 nsec
Delay Time Figure 1 — — 40 nsec
Delay Time Figure 1 — — 60 nsec

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) — — 8 mA

VIN = 0V (Both Inputs) — — 0.6

≤ 18V, unless otherwise specified.

DD

– 10 — 10 µA

– 0.025 — — V

DD

2

3

4

–8

10

9
8
7
6

5
4

A • sec

3

2

–9

10

4

1600

1400

1200

1000

800

600

MAX. POWER (mW)

400
200

0

0

8 Pin CerDIP

8 Pin SOIC

10 20

Crossover Energy Loss

V

DD

Thermal Derating Curves

8 Pin DIP

30 40

50 60

AMBIENT TEMPERATURE (°C)

70

80 90 100 110 120

5

+5V

INPUT

10%

V

OUTPUT

+5V

INPUT

0V

V

DD

OUTPUT

0V

0V

DD

0V

VDD= 18V

4.7 µF

0.1 µF

6

3

≤ 10ns

5,7

OUTPUT

CL = 1000 pF

2,4

INPUT

186 8 10 12 14 16

INPUT: 100 kHz, square wave,

t

= t

RISE

FALL

10%

t

D1

t

F

90%

10%

Inverting Driver

90%

t

D1

10%

Noninverting Driver

t

Figure 1. Switching Time Test Circuit

NOTE: The values on this graph represent the loss seen by both drivers in a package

during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.

90%

t

D2

t

R

90%

10%

6

90%

90%

t

D2

R

10%

t

F

7

8

TELCOM SEMICONDUCTOR, INC.

4-247

TC4426
TC4427
TC4428

TYPICAL CHARACTERISTICS

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

Rise Time vs. Supply Voltage

100

2200 pF

80

1500 pF

60

1000 pF

(nsec)

RISE

40

t

470 pF

20

100 pF

0

4681012

Rise TIme vs. Capacitive Load

100

T

= 25°C TA = 25°C

A

80

60

(nsec)

RISE

40

t

V

DD

TA = 25°C

14 16 18

5V

10V

15V

Fall Time vs. Supply Voltage

100

2200 pF

80

1500 pF

60

(nsec)

1000 pF

FALL

t

40

470 pF

20

100 pF

0

4681012

Fall TIme vs. Capacitive Load

100

80

60

(nsec)

FALL

40

t

TA = 25°C

14 16 18

V

DD

5V

10V

15V

4-248

20

0

100 1000 10,000

C (pF)

LOAD

Rise and Fall Times vs. Temperature

60

C = 1000 pF

LOAD

V = 17.5V

50

40

30

TIME (nsec)

20

10

DD

–55 –35 5 25 45 65 85 105 125–15

t

FALL

t

RISE

TEMPERATURE (°C)

20

0

100 1000 10,000

C (pF)

LOAD

Propagation Delay vs. Supply Voltage

60

C = 1000 pF

D2

50

40

30

DELAY TIME (nsec)

20

10

4681012

t

LOAD

TA = 25°C

t

D1

V

DD

14 16 18

TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

1

TC4426
TC4427
TC4428

Effect of Input Amplitude on Delay Time Propagation Delay Time vs. Temperature

60

C = 1000 pF

LOAD

t

D2

t

D1

V

DRIVE

V = 10V

DD

(V)

50

40

30

DELAY TIME (nsec)

20

10

0246810

Quiescent Supply Current vs. Voltage

T = +25°C

A

BOTH INPUTS = 1

60

V = 18V

DD

V = 1000 pF

LOAD

50

t

D2

40

t

30

DELAY TIME (nsec)

20

10

–55 –35 –15 5 25 45 65 85 105 125

Quiescent Supply Current vs. Temperature

4.0
V = 18V

DD

3.5

(mA)

D1

TA (°C)

2

3

4

1

QUIESCENT

I (mA)

BOTH INPUTS = 0

0.1
4

High-State Output Resistance

25

20

(Ω)

15

DS(ON)

R

10

8

5

4681012

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

V

DD

V

DD

186 8 10 12 14 16

14 16 18

3.0

QUIESCENT

I

2.5

2.0

–55 –35 –15 5 25 45 65 85 105 125

Low-State Output Resistance

25

20

(Ω)

15

DS(ON)

R

10

8

5

4681012

BOTH INPUTS = 1

°C)

TA (

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

14 16 18

V

DD

5

6

7

8

TELCOM SEMICONDUCTOR, INC.

4-249

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS
TC4426
TC4427
TC4428

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

Supply Current vs. Capacitive Load

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

100 1000 10,000

2 MHz

C (pF)

LOAD

900 kHz

600 kHz

200 kHz

20 kHz

Supply Current vs. Capacitive Load

60

2 MHz

900 kHz

600 kHz

50

40

(mA)

30

SUPPLY

I

20

V = 12V

DD

Supply Current vs. Frequency

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

10 100 1000

FREQUENCY (kHz)

Supply Current vs. Frequency

60

V = 12V

50

40

(mA)

30

SUPPLY

20

I

DD

1000 pF

2200 pF

100 pF

2200 pF

1000 pF

100 pF

4-250

10

0

100 1000 10,000

C (pF)

LOAD

200 kHz
20 kHz

Supply Current vs. Capacitive Load

60

V = 6V

50

40

(mA)

30

SUPPLY

I

20

10

DD

2 MHz

900 kHz
600 kHz
200 kHz

0

100 1000 10,000

C (pF)

LOAD

20 kHz

10

0

10 100 1000

FREQUENCY (kHz)

Supply Current vs. Frequency

60

V = 6V

50

40

(mA)

30

SUPPLY

I

20

10

DD

1000 pF

0

10 100 1000

FREQUENCY (kHz)

TELCOM SEMICONDUCTOR, INC.

2200 pF

100 pF