Datasheet TC4427ACPA, TC4427ACOA, TC4426ACPA, TC4426ACOA, TC4428AMJA Datasheet (TelCom Semiconductor)

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

FEATURES

■ High Peak Output Current ............................... 1.5A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability .................1000 pF in 25 nsec Typ

■ Short Delay Time ................................. 30 nsec Typ

■ Matched Rise, Fall and Delay Times

■ Low Supply Current

— With Logic “1” Input ............................ 1 mA Typ

— With Logic “0” Input ......................... 100 µA Typ

■ Low Output Impedance ................................ 7Ω Typ

■ Latch-Up Protected: Will Withstand 0.5A

Reverse Current

■ Input Will Withstand Negative Inputs Up to 5V

■ ESD Protected....................................................4 kV

■ Pinout Same as TC426/TC427/TC428

GENERAL DESCRIPTION

The TC4426A/4427A/4428A are improved versions of
the earlier TC426/427/428 family of buffer/drivers (with
which they are pin compatible). They will not latch up under
any conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4 kV
of electrostatic discharge.

As MOSFET drivers, the TC4426A/4427A/4428A can
easily switch 1000 pF gate capacitances in under 30 ns, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.

TC4426A

1

TC4427A
TC4428A

2

3

4

PIN CONFIGURATIONS

1

NC

2

IN A

TC4426A

3

GND

4

IN B

2,4 7,5

INVERTING

NC = NO INTERNAL CONNECTION

8
7
6
5

NC
OUT A

V

DD

OUT B

NC

1
2

IN A

TC4427A

3

GND

4

IN B

2,4 7,5

NONINVERTING

NOTE: SOIC pinout is identical to DIP.

8
7
6
5

NC
OUT A
V

DD

OUT B

NC

IN A

GND

IN B

1
2

TC4428A

3
4

2

4

DIFFERENTIAL

7

5

FUNCTIONAL BLOCK DIAGRAM

V

INVERTING

OUTPUTS

2 mA

300 mV

NONINVERTING

INPUT

GND

EFFECTIVE INPUT

C = 12 pF

NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers.

2. TC4428A has one inverting and one noninverting driver.

3. Ground any unused driver input.

4.7V

OUTPUTS

TC4426A/TC4427A/TC4428A

DD

OUTPUT

TELCOM SEMICONDUCTOR, INC.

8
7
6
5

NC
OUT A

V

DD

OUT B

ORDERING INFORMATION

Part No. Package Temp. Range

TC4426ACOA 8-Pin SOIC 0°C to +70°C
TC4426ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4426AEOA 8-Pin SOIC – 40°C to +85°C
TC4426AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4426AMJA 8-Pin CerDIP – 55°C to +125°C

TC4427ACOA 8-Pin SOIC 0°C to +70°C
TC4427ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4427AEOA 8-Pin SOIC – 40°C to +85°C
TC4427AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4427AMJA 8-Pin CerDIP – 55°C to +125°C

TC4428ACOA 8-Pin SOIC 0°C to +70°C
TC4428ACPA 8-Pin Plastic DIP 0°C to +70°C
TC4428AEOA 8-Pin SOIC – 40°C to +85°C
TC4428AEPA 8-Pin Plastic DIP – 40°C to +85°C
TC4428AMJA 8-Pin CerDIP – 55°C to +125°C

TC4426A/7A/8A-9 10/21/96

4-251

5

6

7

8

TC4426A
TC4427A
TC4428A

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B..

(V

+ 0.3V) to (GND – 5.0V)

DD

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 45°C/W

θJ-C

ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V

Operating Temperature Range

C Version............................................... 0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 18V, unless

DD

otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current – 0V ≤ VIN ≤ V

DD

TA = 25°C– 1—1µA
– 40°C ≤ TA ≤ 85°C – 10 — 10

Output

V

OH

V

OL

R

O

IPKPeak Output Current VDD = 18V — 1.5 — A
I

REV

High Output Voltage DC Test V
Low Output Voltage DC Test — — 0.025 V
Output Resistance VDD = 18V, IO = 10mA TA = 25°C—79Ω

0°C ≤ T
– 40° ≤ TA ≤ 85°C— 811

Latch-Up Protection Duty Cycle ≤ 2% VDD = 18V 0.5 — — A
Withstand Reverse Current t ≤ 300µsec

≤ 70°C—710

A

– 0.025 — — V

DD

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C — 29 40

Fall Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C — 29 40

Delay Time Figure 1 TA = 25°C — 30 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C — 35 45

Delay Time Figure 1 TA = 25°C — 30 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C — 35 45

≤ 70°C — 27 40

A

≤ 70°C — 27 40

A

≤ 70°C — 33 40

A

≤ 70°C — 33 40

A

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) VDD = 18V — 1.0 2.0 mA

VIN = 0V (Both Inputs) — 0.1 0.2

4-252

TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

1

TC4426A
TC4427A
TC4428A

INPUT

2

4

INPUT: 100 kHz, square wave,

t

= t

RISE

FALL

VDD= 18V

4.7 µF

6

3

≤ 10nsec

7

5

0.1 µF

OUTPUT

CL = 1000 pF

+5V

INPUT

V

DD

OUTPUT

+5V

INPUT

0V

V

DD

OUTPUT

0V

0V

0V

10%

10%

t

D1

90%

t

D1

t

F

10%

Inverting Driver

90%

t

R

10%

t

D2

90%

90%

t

D2

90%

10%

t

R

10%

90%

t

2

3

4

F

Figure 1. Switching Time Test Circuit

Noninverting Driver

5

6

7

TELCOM SEMICONDUCTOR, INC.

8

4-253

TC4426A
TC4427A
TC4428A

TYPICAL CHARACTERISTICS

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

Rise Time vs. Supply Voltage

100

CL= 2200pF

80

CL= 1500pF

60

CL= 1000pF

(nsec)

40

R

t

CL= 470pF

20

CL= 100pF

0

5.0

7.5 10.0 12.5 15.0 17.5

Effect of Input Amplitude on Delay

110

100

90
80
70
60
50
40

Delay Time (nsec)

30
20

t

D1

t

D2

1

2

Temperature = 25°C

VDD (Volts)

V

= 10V CL = 1000pF

DD

4567

3

VDD (Volts)

8

9

Fall Time vs. Supply Voltage

Temperature = 25°C

100

CL= 2200pF

80

CL= 1500pF

60

CL= 1000pF

(nsec)

40

F

t

CL= 470pF

20

CL= 100pF

0

5.0

7.5 10.0 12.5 15.0 17.5

VDD (Volts)

Propagation Delay Time vs. Supply Voltage

CL = 1000pF

60

55
50
45

40

35

30

Delay Time (nsec)

25

20

0

t

D1

t

D2

5

10

VDD (Volts)

15 20

28
26
24
22
20

Time (nsec)

18
16

14

-100

30

TA = 125°C

25

20

T

A

= 125°C

15
10

Rds(on)ohms

5
0

0

Rise and Fall Times vs. Temperature

V

= 18V CL = 1000pF

DD

t

R

t

F

-50 0

TEMPERATURE (°C)

50

100

150

Propagation Delay Time vs.Temperature

VDD = 18V CL = 1000pF

40
35

30

25

t

20
15

-100

D2

t

D1

-50 0

TEMPERATURE (°C)

50

Delay Time (nsec)

High-State Output Resistance Low State Output Resistance

30
25

TA = 125°C

20
15

T

A

= 125°C

10

Rds(on)ohms

5

5

10

VDD (Volts)

15 20

0

0

5

10

VDD (Volts)

15 20

100

150

4-254

TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

Supply Current vs. Frequency

= 18v

V

DD

60
50

40
30
20

I Supply (mA)

10

0

0

CL= 2200pF

500 1000 1500 2000 2500

CL= 1500pF

CL= 1000pF

FREQUENCY (KHz)

CL= 100pF

Supply Current vs. Capacitance Load

= 18v

V

60

50

40
30

20

I Supply (mA)

10

0

0

500 1000 1500 2000 2500

DD

2MHz

CL (pF)

900MHz

600MHz

200MHz

20MHz

1

TC4426A
TC4427A
TC4428A

2

3

80
70

60
50
40
30

I Supply (mA)

20

10

0

0

40
35
30

25

20
15

I Supply (mA)

10

5
0

0

Supply Current vs. Frequency

V

= 12v

DD

500

1000

FREQUENCY (KHz)

1500 2000 2500

Supply Current vs. Frequency

= 6v

V

DD

500

FREQUENCY (KHz)

1000

1500 2000 2500

CL= 2200pF

CL= 1500pF

CL= 1000pF

CL= 100pF

CL= 2200pF

CL= 1500pF

CL= 1000pF

CL= 100pF

Supply Current vs.Capacitance Load

V

= 12v

1000

DD

1500 2000 2500

C

(pF)

L

80
70

60

50
40
30

I Supply (mA)

20
10

0

0

500

Supply Current vs. Capacitance Load

= 6v

V

1000

DD

1500 2000 2500

40

35

30
25
15

I Supply (mA)

10

5

0

0

500

CL (pF)

2MHz

900MHz
600MHz

200MHz

20MHz

2MHz

900MHz
600MHz

200MHz

20MHz

4

5

6

Quiescent Supply Current vs. Voltage

TEMPERATURE = 25°C

5

10

VDD (Volts)

I Quiescent (µA)

900
800

700

600

500

400
300
200
100

0

Both inputs = 1

Both inputs = 0

0

TELCOM SEMICONDUCTOR, INC.

15 20

Quiescent Supply Current vs. Temperature

= 18v

V

1100
1000

I Quiescent (µA)

900
800

700

600
500
400
300
200
100

0

-100

Both inputs = 0

Both inputs = 0

-50

DD

0

TEMPERATURE = (°C)

50 100 150

7

8

4-255