TelCom Semiconductor Inc TC4425MJA, TC4425EPA, TC4425EOE, TC4425CPA, TC4425COE Datasheet

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425

1

FEATURES

■ High Peak Output Current .................................. 3A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability ......................... 1800 pF in 25nsec

■ Short Delay Times ............................. < 40nsec Typ

■ Matched Rise/Fall Times

■ Low Supply Current

— With Logic "1" Input ................................ 3.5 mA

— With Logic "0" Input ................................ 350 µA

■ Low Output Impedance ............................. 3.5Ω Typ

■ Latch-Up Protected . Will Withstand 1.5A Reverse

Current

■ Logic Input Will Withstand Negative Swing Up

to 5V

■ ESD Protected....................................................4 kV

■ Pinouts Same as TC1426/27/28; TC4426/27/28

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4423COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4423CPA 8-Pin Plastic DIP 0°C to +70°C
TC4423EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4423MJA 8-Pin CerDIP – 55°C to +125°C

TC4424COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4424CPA 8-Pin Plastic DIP 0°C to +70°C
TC4424EOE 16-Pin SO Wide – 40°C to +85°C

GENERAL DESCRIPTION

The TC4423/4424/4425 are higher output current ver­sions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their ante­cedents.

Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transduc­ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa­tion limits of the package.

Temperature

Part No Package Range

TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4424MJA 8-Pin CerDIP – 55°C to +125°C

TC4425COE 16-Pin SO Wide 0°C to +70°C
TC4425CPA 8-Pin Plastic DIP 0°C to +70°C
TC4425EOE 16-Pin SO Wide – 40°C to +85°C
TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C

TC4425MJA 8-Pin CerDIP – 55°C to +125°C

2

3

4

5

FUNCTIONAL BLOCK DIAGRAM

INPUT

GND

EFFECTIVE

INPUT C = 20 pF

(EACH INPUT)

TELCOM SEMICONDUCTOR, INC.

4.7V

V

INVERTING

300 mV

NONINVERTING

TC4423
TC4424
TC4425

NOTES:

1. TC4425 has one inverting and one noninverting driver.

2. Ground any unused driver input.

DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.

DD

OUTPUT

6

7

8

TC4423/4/5-6 10/21/96

4-237

TC4423
TC4424
TC4425

3A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R

PIN CONFIGURATIONS

................................................ 150°C/W

θJ-A

.................................................. 55°C/W

θJ-C

................................................... 125°C/W

θJ-A

16-Pin SO Wide

1

NC

IN A

GND
GND

IN B

2

NC

3
4

TC4423

5

TC4424

NC

NC

NC = NO CONNECTION

NOTE: Duplicate pins must both be connected for proper operation.

TC4425

6
7
8

4423 4424 4425

16
15
14
13
12
11
10
9

NC
OUT A

OUT A
V

DD

V

DD
OUT B
OUT B
NC

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

PDIP R
SOIC R
SOIC R

..................................................... 45°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 75°C/W

θJ-C

Operating Temperature Range

C Version...............................................0°C to +70°C

I Version ............................................- 25°C to +85°C

E Version ...........................................- 40°C to +85°C

M Version ........................................- 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP ......................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

NC

IN A

GND

IN B

1
2
3
4

8-Pin DIP

TC4423
TC4424
TC4425

4423 4424 4425

8

NC

NC
OUT A

OUT A

7
6
5

V

DD

OUT B

V

DD

OUT B

NC
OUT A

V

DD

OUT B

ELECTRICAL CHARACTERISTICS: T

= +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

A

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

OH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 1 — 1 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL
O
O

High Output Voltage V

– 0.025 — — V

DD

Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 2.8 5 Ω

OUT

= 10 mA, VDD = 18V — 3.5 5 Ω

OUT

Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800 pF — 23 35 nsec
Fall Time Figure 1, CL = 1800 pF — 25 35 nsec
Delay Time Figure 1, CL = 1800 pF — 33 75 nsec
Delay Time Figure 1, CL = 1800 pF — 38 75 nsec

Power Supply

I

S

Power Supply Current VIN = 3V (Both Inputs) — 1.5 2.5 mA

VIN = 0V (Both Inputs) — 0.15 0.25 mA

4-238

TELCOM SEMICONDUCTOR, INC.

3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS

ELECTRICAL CHARACTERISTICS (Cont.):

1

TC4423
TC4424
TC4425

Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL

O
O

High Output Voltage V
Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I
Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µsec

= 10 mA, VDD = 18V — 3.7 8 Ω

OUT

= 10 mA, VDD = 18V — 4.3 8 Ω

OUT

– 0.025 — — V

DD

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800 pF — 28 60 nsec
Fall Time Figure 1, CL = 1800 pF — 32 60 nsec
Delay Time Figure 1, CL = 1800 pF — 32 100 nsec
Delay Time Figure 1, CL = 1800 pF — 38 100 nsec

Power Supply

I

S

NOTE: 1. Switching times guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) — 2 3.5 mA

VIN = 0V (Both Inputs) — 0.2 0.3

2

3

4

5

Test Circuit

INPUT

INPUT: 100 kHz,

square wave,

t

= t

RISE

FALL

≤ 10 nsec

+5V

INPUT

10%

0V

16V

OUTPUT

0V

Figure 1. Inverting Driver Switching Time

t

D1

90%

10%

V

DD

1

2

TC4423

(1/2 TC4425)

t

F

TELCOM SEMICONDUCTOR, INC.

= 16V

1 µF
WIMA
MKS-2

0.1 µF CERAMIC

OUTPUT

C = 1800pF

L

90%

t

D2

t

R

10%

90%

Test Circuit

INPUT: 100 kHz,

square wave,

t

= t

RISE

≤ 10 nsec

+5V

INPUT

0V

16V

OUTPUT

0V

V

= 16V

DD

1 µF
WIMA
MKS-2

INPUT

FALL

10%

t

D1

Figure 2. Noninverting Driver Switching Time

1

2

(1/2 TC4425)

90%

10%

TC4424

t

R

0.1 µF CERAMIC

OUTPUT

C = 1800pF

L

90%

t

D2

10%

90%

t

F

4-239

6

7

8

TC4423
TC4424
TC4425

TYPICAL CHARACTERISTICS

3A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

Rise Time vs. Supply Voltage

100

4700 pF

80

3300 pF

60

(nsec)

2200 pF

RISE

40

t

20

470 pF

0

4681012

V

Rise TIme vs. Capacitive Load

100

80

60

(nsec)

RISE

40

t

DD

14 16 18

5V

10V
15V

1500 pF

1000 pF

Fall Time vs. Supply Voltage

100

4700 pF

80

3300 pF

60

(nsec)

2200 pF

FALL

t

40

20

470 pF

0

4681012

V

Fall TIme vs. Capacitive Load

100

80

60

(nsec)

FALL

40

t

DD

14 16 18

5V

10V

15V

1500 pF
1000 pF

4-240

20

0

100 1000 10,000

C (pF)

LOAD

Rise and Fall Times vs. Temperature

32

C = 2200 pF

30

28

26

24

TIME (nsec)

22

20

18

–55 –35 5 25 45 65 85 105 125–15

t

RISE

t

FALL

LOAD

TA (°C)

t

FALL

t

RISE

20

0

100 1000 10,000

C

LOAD (pF)

Propagation Delay vs. Input Amplitude

100

C = 2200 pF

LOAD

V = 10V

80

60

40

DELAY TIME (nsec)

20

0123456789101112

t

D1

INPUT (V)

DD

t

D2

TELCOM SEMICONDUCTOR, INC.

3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

1

TC4423
TC4424
TC4425

Propagation Delay Time vs. Supply Voltage

50

C = 2200 pF

45

40

35

30

DELAY TIME (nsec)

25

20

4 6 8 1012141618

Quiescent Current vs. Supply Voltage

TA = +25°C

1

(mA)

0.1

QUIESCENT

I

LOAD

t

D2

t

D2

V

DD

BOTH INPUTS = 1

BOTH INPUTS = 0

Delay Time vs. Temperature

50

C = 2200 pF

45

40

35

30

DELAY TIME (nsec)

25

20

1.4

1.2

1.0

(mA)

0.8

0.6

QUIESCENT

I

0.4

LOAD

t

D2

t

D2

–55 –35 –15 5 25 45 65 85 105 125

TA (°C)

Quiescent Current vs. Temperature

INPUTS = 1

2

3

4

5

0.01
4 6 8 10 12 14 16 18

V

DD

Output Resistance (Output High)

14

12

10

(Ω)

8

DS(ON)

R

6

4

2

4 6 8 10 12 14 16 18

vs. Supply Voltage

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

V

DD

TELCOM SEMICONDUCTOR, INC.

0.2

0.0
–55 –35 –15 5 25 45 65 85 105 125

Output Resistance (Output Low)

14

12

10

(Ω)

8

DS(ON)

R

6

4

2

4 6 8 10 12 14 16 18

INPUTS = 0

TA (°C)

vs. Supply Voltage

WORST CASE @ TJ = +150°C

TYP @ TA = +25°C

V

DD

6

7

8

4-241

TC4423
TC4424
TC4425

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

3A DUAL HIGH-SPEED

MOSFET DRIVERS

Supply Current vs. Capacitive Load

60

V = 18V

DD

50

634 kHz

40

(mA)

30

355 kHz

SUPPLY

I

20

200 kHz

112.5 kHz

10

0

100 1000 10,000

C

LOAD

(pF)

Supply Current vs. Capacitive Load

90

V = 12V

80
70
60

(mA)

50
40

SUPPLY

I

30
20
10

DD

2 MHz

1.125 MHz

634 kHz
355 kHz

0

100 1000 10,000

C

LOAD

(pF)

63.4 kHz

35.5 kHz
20 kHz

200 kHz

112.5 kHz

63.4 kHz
20 kHz

Supply Current vs. Frequency

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

10 100 1000

3300 pF

1000 pF

10,000 pF

100 pF

FREQUENCY (kHz)

Supply Current vs. Frequency

90

V = 12V

80
70
60

(mA)I

50
40

SUPPLY

I

30
20
10

DD

0

10 100 1000

3300 pF

1000 pF

10,000 pF

FREQUENCY (kHz)

100 pF

4-242

Supply Current vs. Capacitive Load

120

V = 6V

DD

100

80

(mA)

60

3.55 MHz

SUPPLY

40

I

2 MHz

20

0

100 1000 10,000

C

LOAD

(pF)

1.125 MHz

634 kHz

355 kHz

112.5 kHz
20 kHz

Supply Current vs. Frequency

120

V = 6V

100

80

(mA)

60

SUPPLY

40

20

DD

0

10 100 1000

FREQUENCY (kHz)

TELCOM SEMICONDUCTOR, INC.

4700 pF

10,000 pF

2200 pF

1000 pF

100 pF

3A DUAL HIGH-SPEED
MOSFET DRIVERS

1

TC4423
TC4424
TC4425

–8

10

8
6

4

2

–9

10

8

A • sec

6
4

2

–10

10

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.

TC4423 Crossover Energy

024681012141618

V

IN

NOTE: The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by

2. For a single transition of a single driver,
divide the stated value by 4.

1400

1200

1000

800

600

MAX. POWER (mW)

400
200

16 Pin SOIC

8 Pin CerDIP

0

020406080

Thermal Derating Curves

8 Pin DIP

AMBIENT TEMPERATURE (°C)

100

2

3

120 140

4

5

TELCOM SEMICONDUCTOR, INC.

6

7

8

4-243