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TC4424EOE
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Datasheet (TelCom Semiconductor)
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Datasheet TC4425MJA, TC4425EPA, TC4425EOE, TC4425CPA, TC4425COE Datasheet (TelCom Semiconductor)

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3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423 TC4424 TC4425
1

FEATURES

■ High Peak Output Current .................................. 3A
■ Wide Operating Range ..........................4.5V to 18V
■ High Capacitive Load
Drive Capability ......................... 1800 pF in 25nsec
■ Short Delay Times ............................. < 40nsec Typ
■ Matched Rise/Fall Times
■ Low Supply Current
— With Logic "1" Input ................................ 3.5 mA
— With Logic "0" Input ................................ 350 µA
■ Low Output Impedance ............................. 3.5Ω Typ
■ Latch-Up Protected . Will Withstand 1.5A Reverse
Current
■ Logic Input Will Withstand Negative Swing Up
to 5V
■ ESD Protected....................................................4 kV
■ Pinouts Same as TC1426/27/28; TC4426/27/28

ORDERING INFORMATION

Temperature
Part No. Package Range

GENERAL DESCRIPTION

The TC4423/4424/4425 are higher output current ver­sions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/ 4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their ante­cedents.
Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transduc­ers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipa­tion limits of the package.
Temperature
Part No Package Range
TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C TC4424MJA 8-Pin CerDIP – 55°C to +125°C
TC4425COE 16-Pin SO Wide 0°C to +70°C TC4425CPA 8-Pin Plastic DIP 0°C to +70°C TC4425EOE 16-Pin SO Wide – 40°C to +85°C TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4425MJA 8-Pin CerDIP – 55°C to +125°C
2
3
4
5

FUNCTIONAL BLOCK DIAGRAM

INPUT
GND
EFFECTIVE
INPUT C = 20 pF
(EACH INPUT)
TELCOM SEMICONDUCTOR, INC.
4.7V
V
INVERTING
300 mV
NONINVERTING
TC4423 TC4424 TC4425
NOTES:
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
DUAL INVERTING DUAL NONINVERTING ONE INV., ONE NONINV.
DD
OUTPUT
6
7
8
TC4423/4/5-6 10/21/96
4-237
TC4423 TC4424 TC4425
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP R CerDIP R PDIP R

PIN CONFIGURATIONS

................................................ 150°C/W
θJ-A
.................................................. 55°C/W
θJ-C
................................................... 125°C/W
θJ-A
16-Pin SO Wide
1
NC
IN A
GND GND
IN B
2
NC
3 4
TC4423
5
TC4424
NC
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
TC4425
6 7 8
4423 4424 4425
16 15 14 13 12 11 10 9
NC OUT A
OUT A V
DD
V
DD OUT B OUT B NC
NC OUT A OUT A
V
DD
V
DD OUT B OUT B NC
PDIP R SOIC R SOIC R
..................................................... 45°C/W
θJ-C
................................................... 155°C/W
θJ-A
..................................................... 75°C/W
θJ-C
Operating Temperature Range
C Version...............................................0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
NC OUT A OUT A
V
DD
V
DD OUT B OUT B NC
NC
IN A
GND
IN B
1 2 3 4
8-Pin DIP
TC4423 TC4424 TC4425
4423 4424 4425
8
NC
NC OUT A
OUT A
7 6 5
V
DD
OUT B
V
DD
OUT B
NC OUT A
V
DD
OUT B
ELECTRICAL CHARACTERISTICS: T
= +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
A
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
OH
V
IL
I
IN
Logic 1 High Input Voltage 2.4 — — V Logic 0 Low Input Voltage — — 0.8 V Input Current 0V ≤ VIN ≤ V
DD
– 1 — 1 µA
Output
V V R R I
PK
I
REV
OH OL O O
High Output Voltage V
– 0.025 — — V
DD
Low Output Voltage — — 0.025 V Output Resistance, High I Output Resistance, Low I
= 10 mA, VDD = 18V — 2.8 5 Ω
OUT
= 10 mA, VDD = 18V — 3.5 5 Ω
OUT
Peak Output Current — 3 — A Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A
Withstand Reverse Current t ≤ 300 µsec
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1800 pF — 23 35 nsec Fall Time Figure 1, CL = 1800 pF — 25 35 nsec Delay Time Figure 1, CL = 1800 pF — 33 75 nsec Delay Time Figure 1, CL = 1800 pF — 38 75 nsec
Power Supply
I
S
Power Supply Current VIN = 3V (Both Inputs) — 1.5 2.5 mA
VIN = 0V (Both Inputs) — 0.15 0.25 mA
4-238
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED POWER --MOSFET DRIVERS
ELECTRICAL CHARACTERISTICS (Cont.):
1
TC4423 TC4424 TC4425
Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage 2.4 — — V Logic 0 Low Input Voltage — — 0.8 V Input Current 0V ≤ VIN ≤ V
DD
– 10 — 10 µA
Output
V V R R I
PK
I
REV
OH OL
O O
High Output Voltage V Low Output Voltage — — 0.025 V Output Resistance, High I Output Resistance, Low I Peak Output Current — 3 — A Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A
Withstand Reverse Current t ≤ 300 µsec
= 10 mA, VDD = 18V — 3.7 8 Ω
OUT
= 10 mA, VDD = 18V — 4.3 8 Ω
OUT
– 0.025 — — V
DD
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1800 pF — 28 60 nsec Fall Time Figure 1, CL = 1800 pF — 32 60 nsec Delay Time Figure 1, CL = 1800 pF — 32 100 nsec Delay Time Figure 1, CL = 1800 pF — 38 100 nsec
Power Supply
I
S
NOTE: 1. Switching times guaranteed by design.
Power Supply Current VIN = 3V (Both Inputs) — 2 3.5 mA
VIN = 0V (Both Inputs) — 0.2 0.3
2
3
4
5
Test Circuit
INPUT
INPUT: 100 kHz,
square wave,
t
= t
RISE
FALL
≤ 10 nsec
+5V
INPUT
10%
0V
16V
OUTPUT
0V
Figure 1. Inverting Driver Switching Time
t
D1
90%
10%
V
DD
1
2
TC4423
(1/2 TC4425)
t
F
TELCOM SEMICONDUCTOR, INC.
= 16V
1 µF WIMA MKS-2
0.1 µF CERAMIC
OUTPUT
C = 1800pF
L
90%
t
D2
t
R
10%
90%
Test Circuit
INPUT: 100 kHz,
square wave,
t
= t
RISE
≤ 10 nsec
+5V
INPUT
0V
16V
OUTPUT
0V
V
= 16V
DD
1 µF WIMA MKS-2
INPUT
FALL
10%
t
D1
Figure 2. Noninverting Driver Switching Time
1
2
(1/2 TC4425)
90%
10%
TC4424
t
R
0.1 µF CERAMIC
OUTPUT
C = 1800pF
L
90%
t
D2
10%
90%
t
F
4-239
6
7
8
TC4423 TC4424 TC4425

TYPICAL CHARACTERISTICS

3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
Rise Time vs. Supply Voltage
100
4700 pF
80
3300 pF
60
(nsec)
2200 pF
RISE
40
t
20
470 pF
0
4681012
V
Rise TIme vs. Capacitive Load
100
80
60
(nsec)
RISE
40
t
DD
14 16 18
5V
10V 15V
1500 pF
1000 pF
Fall Time vs. Supply Voltage
100
4700 pF
80
3300 pF
60
(nsec)
2200 pF
FALL
t
40
20
470 pF
0
4681012
V
Fall TIme vs. Capacitive Load
100
80
60
(nsec)
FALL
40
t
DD
14 16 18
5V
10V
15V
1500 pF 1000 pF
4-240
20
0
100 1000 10,000
C (pF)
LOAD
Rise and Fall Times vs. Temperature
32
C = 2200 pF
30
28
26
24
TIME (nsec)
22
20
18
–55 –35 5 25 45 65 85 105 125–15
t
RISE
t
FALL
LOAD
TA (°C)
t
FALL
t
RISE
20
0
100 1000 10,000
C
LOAD (pF)
Propagation Delay vs. Input Amplitude
100
C = 2200 pF
LOAD
V = 10V
80
60
40
DELAY TIME (nsec)
20
0123456789101112
t
D1
INPUT (V)
DD
t
D2
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
1
TC4423 TC4424 TC4425
Propagation Delay Time vs. Supply Voltage
50
C = 2200 pF
45
40
35
30
DELAY TIME (nsec)
25
20
4 6 8 1012141618
Quiescent Current vs. Supply Voltage
TA = +25°C
1
(mA)
0.1
QUIESCENT
I
LOAD
t
D2
t
D2
V
DD
BOTH INPUTS = 1
BOTH INPUTS = 0
Delay Time vs. Temperature
50
C = 2200 pF
45
40
35
30
DELAY TIME (nsec)
25
20
1.4
1.2
1.0
(mA)
0.8
0.6
QUIESCENT
I
0.4
LOAD
t
D2
t
D2
–55 –35 –15 5 25 45 65 85 105 125
TA (°C)
Quiescent Current vs. Temperature
INPUTS = 1
2
3
4
5
0.01 4 6 8 10 12 14 16 18
V
DD
Output Resistance (Output High)
14
12
10
(Ω)
8
DS(ON)
R
6
4
2
4 6 8 10 12 14 16 18
vs. Supply Voltage
WORST CASE @ TJ = +150°C
TYP @ TA = +25°C
V
DD
TELCOM SEMICONDUCTOR, INC.
0.2
0.0 –55 –35 –15 5 25 45 65 85 105 125
Output Resistance (Output Low)
14
12
10
(Ω)
8
DS(ON)
R
6
4
2
4 6 8 10 12 14 16 18
INPUTS = 0
TA (°C)
vs. Supply Voltage
WORST CASE @ TJ = +150°C
TYP @ TA = +25°C
V
DD
6
7
8
4-241
TC4423 TC4424 TC4425

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

3A DUAL HIGH-SPEED
MOSFET DRIVERS
Supply Current vs. Capacitive Load
60
V = 18V
DD
50
634 kHz
40
(mA)
30
355 kHz
SUPPLY
I
20
200 kHz
112.5 kHz
10
0
100 1000 10,000
C
LOAD
(pF)
Supply Current vs. Capacitive Load
90
V = 12V
80 70 60
(mA)
50 40
SUPPLY
I
30 20 10
DD
2 MHz
1.125 MHz
634 kHz 355 kHz
0
100 1000 10,000
C
LOAD
(pF)
63.4 kHz
35.5 kHz 20 kHz
200 kHz
112.5 kHz
63.4 kHz 20 kHz
Supply Current vs. Frequency
60
V = 18V
DD
50
40
(mA)
30
SUPPLY
I
20
10
0
10 100 1000
3300 pF
1000 pF
10,000 pF
100 pF
FREQUENCY (kHz)
Supply Current vs. Frequency
90
V = 12V
80 70 60
(mA)I
50 40
SUPPLY
I
30 20 10
DD
0
10 100 1000
3300 pF
1000 pF
10,000 pF
FREQUENCY (kHz)
100 pF
4-242
Supply Current vs. Capacitive Load
120
V = 6V
DD
100
80
(mA)
60
3.55 MHz
SUPPLY
40
I
2 MHz
20
0
100 1000 10,000
C
LOAD
(pF)
1.125 MHz
634 kHz
355 kHz
112.5 kHz 20 kHz
Supply Current vs. Frequency
120
V = 6V
100
80
(mA)
60
SUPPLY
40
20
DD
0
10 100 1000
FREQUENCY (kHz)
TELCOM SEMICONDUCTOR, INC.
4700 pF
10,000 pF
2200 pF
1000 pF
100 pF
3A DUAL HIGH-SPEED MOSFET DRIVERS
1
TC4423 TC4424 TC4425
–8
10
8 6
4
2
–9
10
8
A • sec
6 4
2
–10
10
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
TC4423 Crossover Energy
024681012141618
V
IN
NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by
2. For a single transition of a single driver, divide the stated value by 4.
1400
1200
1000
800
600
MAX. POWER (mW)
400 200
16 Pin SOIC
8 Pin CerDIP
0
020406080
Thermal Derating Curves
8 Pin DIP
AMBIENT TEMPERATURE (°C)
100
2
3
120 140
4
5
TELCOM SEMICONDUCTOR, INC.
6
7
8
4-243
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