TC4423COE16-Pin SOIC (Wide)0°C to +70°C
TC4423CPA8-Pin Plastic DIP0°C to +70°C
TC4423EOE16-Pin SOIC (Wide)– 40°C to +85°C
TC4423EPA8-Pin Plastic DIP– 40°C to +85°C
TC4423MJA8-Pin CerDIP– 55°C to +125°C
TC4424COE16-Pin SOIC (Wide)0°C to +70°C
TC4424CPA8-Pin Plastic DIP0°C to +70°C
TC4424EOE16-Pin SO Wide– 40°C to +85°C
GENERAL DESCRIPTION
The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their antecedents.
Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipation limits of the package.
Temperature
Part NoPackageRange
TC4424EPA8-Pin Plastic DIP– 40°C to +85°C
TC4424MJA8-Pin CerDIP– 55°C to +125°C
TC4425COE16-Pin SO Wide0°C to +70°C
TC4425CPA8-Pin Plastic DIP0°C to +70°C
TC4425EOE16-Pin SO Wide– 40°C to +85°C
TC4425EPA8-Pin Plastic DIP– 40°C to +85°C
TC4425MJA8-Pin CerDIP– 55°C to +125°C
2
3
4
5
FUNCTIONAL BLOCK DIAGRAM
INPUT
GND
EFFECTIVE
INPUT C = 20 pF
(EACH INPUT)
TELCOM SEMICONDUCTOR, INC.
4.7V
V
INVERTING
300 mV
NONINVERTING
TC4423
TC4424
TC4425
NOTES:
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.
DD
OUTPUT
6
7
8
TC4423/4/5-6 10/21/96
4-237
TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
3A DUAL HIGH-SPEED
MOSFET DRIVERS
Supply Current vs. Capacitive Load
60
V = 18V
DD
50
634 kHz
40
(mA)
30
355 kHz
SUPPLY
I
20
200 kHz
112.5 kHz
10
0
100100010,000
C
LOAD
(pF)
Supply Current vs. Capacitive Load
90
V = 12V
80
70
60
(mA)
50
40
SUPPLY
I
30
20
10
DD
2 MHz
1.125 MHz
634 kHz
355 kHz
0
100100010,000
C
LOAD
(pF)
63.4 kHz
35.5 kHz
20 kHz
200 kHz
112.5 kHz
63.4 kHz
20 kHz
Supply Current vs. Frequency
60
V = 18V
DD
50
40
(mA)
30
SUPPLY
I
20
10
0
101001000
3300 pF
1000 pF
10,000 pF
100 pF
FREQUENCY (kHz)
Supply Current vs. Frequency
90
V = 12V
80
70
60
(mA)I
50
40
SUPPLY
I
30
20
10
DD
0
101001000
3300 pF
1000 pF
10,000 pF
FREQUENCY (kHz)
100 pF
4-242
Supply Current vs. Capacitive Load
120
V = 6V
DD
100
80
(mA)
60
3.55 MHz
SUPPLY
40
I
2 MHz
20
0
100100010,000
C
LOAD
(pF)
1.125 MHz
634 kHz
355 kHz
112.5 kHz
20 kHz
Supply Current vs. Frequency
120
V = 6V
100
80
(mA)
60
SUPPLY
40
20
DD
0
101001000
FREQUENCY (kHz)
TELCOM SEMICONDUCTOR, INC.
4700 pF
10,000 pF
2200 pF
1000 pF
100 pF
3A DUAL HIGH-SPEED
MOSFET DRIVERS
1
TC4423
TC4424
TC4425
–8
10
8
6
4
2
–9
10
8
A • sec
6
4
2
–10
10
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
TC4423 Crossover Energy
024681012141618
V
IN
NOTE: The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by
2. For a single transition of a single driver,
divide the stated value by 4.
1400
1200
1000
800
600
MAX. POWER (mW)
400
200
16 Pin SOIC
8 Pin CerDIP
0
020406080
Thermal Derating Curves
8 Pin DIP
AMBIENT TEMPERATURE (°C)
100
2
3
120140
4
5
TELCOM SEMICONDUCTOR, INC.
6
7
8
4-243
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