TelCom Semiconductor Inc TC4425MJA, TC4425EPA, TC4425EOE, TC4425CPA, TC4425COE Datasheet

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425

1

FEATURES

■ High Peak Output Current .................................. 3A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability ......................... 1800 pF in 25nsec

■ Short Delay Times ............................. < 40nsec Typ

■ Matched Rise/Fall Times

■ Low Supply Current

— With Logic "1" Input ................................ 3.5 mA

— With Logic "0" Input ................................ 350 µA

■ Low Output Impedance ............................. 3.5Ω Typ

■ Latch-Up Protected . Will Withstand 1.5A Reverse

Current

■ Logic Input Will Withstand Negative Swing Up

to 5V

■ ESD Protected....................................................4 kV

■ Pinouts Same as TC1426/27/28; TC4426/27/28

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4423COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4423CPA 8-Pin Plastic DIP 0°C to +70°C
TC4423EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4423MJA 8-Pin CerDIP – 55°C to +125°C

TC4424COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4424CPA 8-Pin Plastic DIP 0°C to +70°C
TC4424EOE 16-Pin SO Wide – 40°C to +85°C

GENERAL DESCRIPTION

The TC4423/4424/4425 are higher output current ver­sions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their ante­cedents.

Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transduc­ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa­tion limits of the package.

Temperature

Part No Package Range

TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4424MJA 8-Pin CerDIP – 55°C to +125°C

TC4425COE 16-Pin SO Wide 0°C to +70°C
TC4425CPA 8-Pin Plastic DIP 0°C to +70°C
TC4425EOE 16-Pin SO Wide – 40°C to +85°C
TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C

TC4425MJA 8-Pin CerDIP – 55°C to +125°C

2

3

4

5

FUNCTIONAL BLOCK DIAGRAM

INPUT

GND

EFFECTIVE

INPUT C = 20 pF

(EACH INPUT)

TELCOM SEMICONDUCTOR, INC.

4.7V

V

INVERTING

300 mV

NONINVERTING

TC4423
TC4424
TC4425

NOTES:

1. TC4425 has one inverting and one noninverting driver.

2. Ground any unused driver input.

DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.

DD

OUTPUT

6

7

8

TC4423/4/5-6 10/21/96

4-237

TC4423
TC4424
TC4425

3A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R

PIN CONFIGURATIONS

................................................ 150°C/W

θJ-A

.................................................. 55°C/W

θJ-C

................................................... 125°C/W

θJ-A

16-Pin SO Wide

1

NC

IN A

GND
GND

IN B

2

NC

3
4

TC4423

5

TC4424

NC

NC

NC = NO CONNECTION

NOTE: Duplicate pins must both be connected for proper operation.

TC4425

6
7
8

4423 4424 4425

16
15
14
13
12
11
10
9

NC
OUT A

OUT A
V

DD

V

DD
OUT B
OUT B
NC

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

PDIP R
SOIC R
SOIC R

..................................................... 45°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 75°C/W

θJ-C

Operating Temperature Range

C Version...............................................0°C to +70°C

I Version ............................................- 25°C to +85°C

E Version ...........................................- 40°C to +85°C

M Version ........................................- 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP ......................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

NC

IN A

GND

IN B

1
2
3
4

8-Pin DIP

TC4423
TC4424
TC4425

4423 4424 4425

8

NC

NC
OUT A

OUT A

7
6
5

V

DD

OUT B

V

DD

OUT B

NC
OUT A

V

DD

OUT B

ELECTRICAL CHARACTERISTICS: T

= +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

A

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

OH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 1 — 1 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL
O
O

High Output Voltage V

– 0.025 — — V

DD

Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 2.8 5 Ω

OUT

= 10 mA, VDD = 18V — 3.5 5 Ω

OUT

Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800 pF — 23 35 nsec
Fall Time Figure 1, CL = 1800 pF — 25 35 nsec
Delay Time Figure 1, CL = 1800 pF — 33 75 nsec
Delay Time Figure 1, CL = 1800 pF — 38 75 nsec

Power Supply

I

S

Power Supply Current VIN = 3V (Both Inputs) — 1.5 2.5 mA

VIN = 0V (Both Inputs) — 0.15 0.25 mA

4-238

TELCOM SEMICONDUCTOR, INC.

3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS

ELECTRICAL CHARACTERISTICS (Cont.):

1

TC4423
TC4424
TC4425

Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL

O
O

High Output Voltage V
Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I
Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µsec

= 10 mA, VDD = 18V — 3.7 8 Ω

OUT

= 10 mA, VDD = 18V — 4.3 8 Ω

OUT

– 0.025 — — V

DD

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800 pF — 28 60 nsec
Fall Time Figure 1, CL = 1800 pF — 32 60 nsec
Delay Time Figure 1, CL = 1800 pF — 32 100 nsec
Delay Time Figure 1, CL = 1800 pF — 38 100 nsec

Power Supply

I

S

NOTE: 1. Switching times guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) — 2 3.5 mA

VIN = 0V (Both Inputs) — 0.2 0.3

2

3

4

5

Test Circuit

INPUT

INPUT: 100 kHz,

square wave,

t

= t

RISE

FALL

≤ 10 nsec

+5V

INPUT

10%

0V

16V

OUTPUT

0V

Figure 1. Inverting Driver Switching Time

t

D1

90%

10%

V

DD

1

2

TC4423

(1/2 TC4425)

t

F

TELCOM SEMICONDUCTOR, INC.

= 16V

1 µF
WIMA
MKS-2

0.1 µF CERAMIC

OUTPUT

C = 1800pF

L

90%

t

D2

t

R

10%

90%

Test Circuit

INPUT: 100 kHz,

square wave,

t

= t

RISE

≤ 10 nsec

+5V

INPUT

0V

16V

OUTPUT

0V

V

= 16V

DD

1 µF
WIMA
MKS-2

INPUT

FALL

10%

t

D1

Figure 2. Noninverting Driver Switching Time

1

2

(1/2 TC4425)

90%

10%

TC4424

t

R

0.1 µF CERAMIC

OUTPUT

C = 1800pF

L

90%

t

D2

10%

90%

t

F

4-239

6

7

8