TelCom Semiconductor Inc TC4405EOA, TC4405CPA, TC4405COA, TC4404MJA, TC4404EPA Datasheet

...
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

FEATURES

GENERAL DESCRIPTION

1
TC4404 TC4405
2
Independently-Programmable Rise and Fall Times
Low Output Impedance ................................ 7 Typ
High Speed tR, tF....... <30 nsec with 1000 pF Load
Short Delay Times ....................................< 30 nsec
Wide Operating Range ..........................4.5V to 18V
Latch-Up Protected ......... Will Withstand >500 mA
Reverse Current (Either Polarity)
Input Withstands Negative Swings Up to –5V

APPLICATIONS

Motor Controls
Driving Bipolar Transistors
Driver for Nonoverlapping Totem Poles
Reach-Up/Reach-Down Driver

ORDERING INFORMATION

Part No. Package Temperature
Range
TC4404COA 8-Pin SOIC 0°C to +70°C TC4404CPA 8-Pin PDIP 0°C to +70°C TC4404EOA 8-Pin SOIC – 40°C to +85°C TC4404EPA 8-Pin PDIP – 40°C to +85°C TC4404MJA 8-Pin CerDIP – 55°C to +125°C
TC4405COA 8-Pin SOIC 0°C to +70°C TC4405CPA 8-Pin PDIP 0°C to +70°C TC4405EOA 8-Pin SOIC – 40°C to +85°C TC4405EPA 8-Pin PDIP – 40°C to +85°C TC4405MJA 8-Pin CerDIP – 55°C to +125°C

FUNCTIONAL BLOCK DIAGRAM

The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull­down sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000-pF load. There is no upper limit.
For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these de­vices are superior to the previously-used technique of add­ing a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device.
When used to drive bipolar transistors, these drivers maintain the high speeds common to other TelCom driv­ers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transis­tors can be driven.
For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets.
Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device,
1
V
DD
3
4
5
6
2 (3)
INPUT
4.7V
4
GND
TELCOM SEMICONDUCTOR, INC.
INPUT
C 12 pF
300 mV
TC4404
INVERTING
TC4405
NONINVERTING
A (B)
8 (6)
7 (5)
PULL UP
PULL DOWN
7
8
TC4404/5-6 10/21/96
4-219
TC4404 TC4405
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
thus minimizing chip count. Unused open drains should be retur ned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity.
These devices are built to operate in the most de­manding electrical environments. They will not latch up under any conditions within their power and voltage rat­ings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 1/2 amp of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ......................................................... +22V
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................– 65°C to +150°C
Package Thermal Resistance
CerDIP R CerDIP R PDIP R PDIP R SOIC R SOIC R
............................................... 150°C/W
θJ-A
................................................. 55°C/W
θJ-C
.................................................. 125°C/W
θJ-A
.................................................... 45°C/W
θJ-C
.................................................. 155°C/W
θJ-A
.................................................... 45°C/W
θJ-C
Operating Temperature Range
C Version...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version .......................................– 55°C to +125°C
Package Power Dissipation (TA 70°C)
Plastic .............................................................730mW
CerDP.............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
Lead Temperature (Soldering, 10 sec) .................+300°C
ELECTRICAL CHARACTERISTICS:
Specifications measured at TA = +25°C with 4.5V VDD 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage 2.4 V Logic 0 Low Input Voltage 0.8 V Input Current – 0V V
IN
V
DD
– 1 1 µA
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
High Output Voltage V Low Output Voltage 0.025 V Output Resistance I Peak Output Current (Any Drain) Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain)
Withstand Reverse Current
= 1 0 mA, VDD = 18V; Any Drain 7 10
OUT
Duty cycle < 2%, t 300µsec 1.5 A
Duty cycle < 2%, t 300µsec > 500 mA
– 0.025 V
DD
100 mA
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1000 pF 25 30 nsec Fall Time Figure 1, CL = 1000 pF 25 30 nsec Delay Time Figure 1, CL = 1000 pF 15 30 nsec Delay Time Figure 1, CL = 1000 pF 32 50 nsec
Power Supply
I
S
NOTE: 1. Switching times guaranteed by design.
Power Supply Current VIN = 3V (Both Inputs) 4.5 mA
VIN = 0V (Both Inputs) 0.4
4-220
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
TC4404 TC4405

ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range

with 4.5V VDD 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
NOTE 1. Switching times guaranteed by design.
Logic 1 High Input Voltage 2.4 V Logic 0 Low Input Voltage 0.8 V Input Current – 0V V
High Output Voltage V Low Output Voltage 0.025 V Output Resistance I Peak Output Current (Any Drain) Duty cycle <2%, t 300µsec Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain) Duty cycle <2%, t 300µsec
Withstand Reverse Current
Rise Time Figure 1, CL = 1000 pF 40 nsec Fall Time Figure 1, CL = 1000 pF 40 nsec Delay Time Figure 1, CL = 1000 pF 40 nsec Delay Time Figure 1, CL = 1000 pF 60 nsec
Power Supply Current VIN = 3V (Both Inputs) 8 mA
OUT
VIN = 0V (Both Inputs) 0.6
V
IN
DD
= 10 mA, VDD = 18V; Any Drain 9 12
– 10 10 µA
– 0.025 V
DD
1.5 A — 100 mA
>500 mA
1
2
3
4
5

Circuit Layout Guidelines

Avoid long power supply and ground traces (added inductance causes unwanted voltage transients). Use power and ground planes wherever possible. In addition, it is advisable that low ESR bypass capacitors (4.7µF or 10µF

PIN CONFIGURATIONS (DIP AND SOIC)

V
18
DD
27
IN A
36
IN B
45
V
18
DD
27
IN A
36
IN B
45
TC4404
TC4405
A TOP A BOTTOM B TOP B BOTTOMCOM
A TOP A BOTTOM B TOP B BOTTOMCOM
tantalum) be placed as close to the driver as possible. The driver should be physically located as close to the device it is driving as possible to minimize the length of the output trace.
V
18
DD
27
IN A
36
IN B
45
V
18
DD
27
IN A
36
IN B
45
TC4404
TC4405
A TOP A BOTTOM B TOP B BOTTOMCOM
A TOP A BOTTOM B TOP B BOTTOMCOM
6
7
8
TELCOM SEMICONDUCTOR, INC.
4-221
TC4404 TC4405
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
INPUT
2,3 8,7
INPUT: 100 kHz, square wave,
t
= t
RISE
FALL
V
DD
1
1
2
4
10 nsec
= 18V
4.7 µF
0.1 µF
OUTPUT
C = 1000 pF
L
+5V
INPUT
0V
18V
OUTPUT
0V
+5V
INPUT
0V
18V
OUTPUT
0V
10%
10%
t
D1
t
F
90%
10%
INVERTING DRIVER
90%
t
D1
NONINVERTING DRIVER
10%
t
R
t
D2
90%
t
D2
90%
10%
t
R
10%
90%
90%
t
F
Figure 1. Switching Time Test Circuit
4-222
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

TYPICAL CHARACTERISTICS

1
TC4404 TC4405
100
80
60
(nsec)
40
RISE
t
20
2200 pF
1500 pF
1000 pF
470 pF
100 pF
0
4681012
V
DD
TA = +25°C
14 16 18
Fall Time vs. Capacitive Load
100
TA = +25
80
60
(nsec)
40
FALL
t
20
0
100 1000 10,000
°C
C
LOAD
(pF)
V
DD
10V 15V
Effect of Input Amplitude
on Delay Time
60
C
= 1000 pF
LOAD
50
40
30
DELAY TIME (nsec)
20
t
D1
VDD = 10V TA= +25
t
D2
°C
= 5V
Fall Time vs. Supply VoltageRise Time vs. Supply Voltage
100
2200 pF
80
60
(nsec)
1000 pF
40
FALL
t
470 pF
20
100 pF
0
4681012
1500 pF
Rise and Fall Times
vs. Temperature
60
C
50
40
30
TIME (nsec)
20
10
–55 –35 5 25 45 65 85 105 125–15
= 1000 pF
LOAD
V
= 17.5V
DD
t
FALL
TEMPERATURE (°C)
Propagation Delay Time
vs. Temperature
60
VDD = 17.5V
50
V
= 1000 pF
LOAD
40 30 20 10
DELAY TIME (nsec)
Rise TIme vs. Capacitive Load
100
TA = +25°C
V
14 16 18
DD
TA = +25
80
60
(nsec)
40
RISE
t
20
0
100 1000 10,000
°C
C
LOAD
(pF)
V
DD
10V 15V
= 5V
Propagation Delay
2
3
4
vs. Supply Voltage
60
50
40
C TA = +25°C
t
D2
LOAD
= 1000 pF
5
30
DD
t
D1
14 16 18
6
7
t
RISE
DELAY TIME (nsec)
20
10
4681012
V
Quiescent Supply Current
vs. Voltage
10
TA = +25
t
D2
BOTH INPUTS = 1
(mA)
1
QUIESCENT
I
t
D1
BOTH INPUTS = 0
°C
10
0246810
V
DRIVE
(V)
TELCOM SEMICONDUCTOR, INC.
–55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
0.1 4
VDD
186 8 10 12 14 16
8
4-223
TC4404 TC4405
TYPICAL CHARACTERISTICS (Cont.)
Quiescent Supply Current
vs. Temperature
4.0 VDD = 18V BOTH INPUTS = 1
3.5
(mA)
3.0
QUIESCENT
I
2.5
25
20
()
15
(DS(ON)
R
10
8
Pull-Up Output Resistance
WORST CASE
@ TJ = +150°C
TYP @ +25°C
1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
Pull-Down Output Resistance
25
20
()
15
DS(ON)
R
10
8
WORST CASE
@ TJ = +150
TYP @ +25°C
°C
2.0 –55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
5
4681012
V
DD
14 16 18
5
4681012
TYPICAL APPLICATIONS
Zero Crossover Current Totem-Pole Switch Driving Bipolar Transistors
V
DD
(4.5V – 18V)
R
FROM TTL
TC4405
IB
R
IB
GND
REACH-UP AND REACH-DOWN DRIVING
+12V
+5V
(4.5V–18V)
FROM TTL
+24V
+12V
DIRECTION
(TTL LEVEL)
V
DD
GND
TC4404
R
T
R
T
Servo Motor Control
47 k
15V
V
OUT
47 k
0.1 µF 0.1 µF
15V
V
DD
14 16 18
+12V
SWITCHED +12V
+5V
4-224
SPEED
(PWM)
GND
R
T
R
T
I
TC4404TC4469
SENSE
MOTOR
FROM TTL
GND
–12V
TC4404
GND
SWITCHED –12V
–12V
TELCOM SEMICONDUCTOR, INC.
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