■Low Output Impedance ................................ 7Ω Typ
■High Speed tR, tF....... <30 nsec with 1000 pF Load
■Short Delay Times ....................................< 30 nsec
■Wide Operating Range ..........................4.5V to 18V
■Latch-Up Protected ......... Will Withstand >500 mA
Reverse Current (Either Polarity)
■Input Withstands Negative Swings Up to –5V
APPLICATIONS
■Motor Controls
■Driving Bipolar Transistors
■Driver for Nonoverlapping Totem Poles
■Reach-Up/Reach-Down Driver
ORDERING INFORMATION
Part No.PackageTemperature
Range
TC4404COA8-Pin SOIC0°C to +70°C
TC4404CPA8-Pin PDIP0°C to +70°C
TC4404EOA8-Pin SOIC– 40°C to +85°C
TC4404EPA8-Pin PDIP– 40°C to +85°C
TC4404MJA8-Pin CerDIP– 55°C to +125°C
TC4405COA8-Pin SOIC0°C to +70°C
TC4405CPA8-Pin PDIP0°C to +70°C
TC4405EOA8-Pin SOIC– 40°C to +85°C
TC4405EPA8-Pin PDIP– 40°C to +85°C
TC4405MJA8-Pin CerDIP– 55°C to +125°C
FUNCTIONAL BLOCK DIAGRAM
The TC4404 and TC4405 are CMOS buffer-drivers
constructed with complementary MOS outputs, where the
drains of the totem-pole output have been left separated so
that individual connections can be made to the pull-up and
pull-down sections of the output. This allows the insertion
of drain-current-limiting resistors in the pull-up and/or pulldown sections, allowing the user to define the rates of rise
and fall for a capacitive load; or a reduced output swing, if
driving a resistive load, or to limit base current, when
driving a bipolar transistor. Minimum rise and fall times,
with no resistors, will be less than 30 nsec for a 1000-pF
load. There is no upper limit.
For driving MOSFETs in motor-control applications,
where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output
and the MOSFET, because they allow accurate control of
turn-ON, while maintaining fast turn-OFF and maximum
noise immunity for an OFF device.
When used to drive bipolar transistors, these drivers
maintain the high speeds common to other TelCom drivers. They allow insertion of a base current-limiting resistor,
while providing a separate half-output for fast turn-OFF. By
proper positioning of the resistor, either npn or pnp transistors can be driven.
For driving many loads in low-power regimes, these
drivers, because they eliminate shoot-through currents in
the output stage, require significantly less power at higher
frequencies, and can be helpful in meeting low-power
budgets.
Because neither drain in an output is dependent on
the other, these devices can also be used as open-drain
buffer/drivers where both drains are available in one device,
1
V
DD
3
4
5
6
2 (3)
INPUT
4.7V
4
GND
TELCOM SEMICONDUCTOR, INC.
EFFECTIVE
INPUT
C 12 pF
300 mV
TC4404
INVERTING
TC4405
NONINVERTING
A (B)
8 (6)
7 (5)
PULL UP
PULL DOWN
7
8
TC4404/5-6 10/21/96
4-219
TC4404
TC4405
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
thus minimizing chip count. Unused open drains should be
retur ned to the supply rail that their device sources are
connected to (pull-downs to ground, pull-ups to VDD), to
prevent static damage. In addition, in situations where
timing resistors or other means of limiting crossover currents
are used, like drains may be paralleled for greater current
carrying capacity.
These devices are built to operate in the most demanding electrical environments. They will not latch up
under any conditions within their power and voltage ratings; they are not subject to damage when up to 5V of
noise spiking of either polarity occurs on their ground pin;
and they can accept, without damage or logic upset, up to
1/2 amp of reverse current (of either polarity) being forced
back into their outputs. All terminals are fully protected
against up to 2 kV of electrostatic discharge.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................– 65°C to +150°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
Lead Temperature (Soldering, 10 sec) .................+300°C
ELECTRICAL CHARACTERISTICS:
Specifications measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
SymbolParameter Test ConditionsMinTypMaxUnit
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage2.4——V
Logic 0 Low Input Voltage——0.8V
Input Current – 0V ≤ V
IN
≤ V
DD
– 1—1µA
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
High Output VoltageV
Low Output Voltage——0.025V
Output Resistance I
Peak Output Current (Any Drain)
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain)
Withstand Reverse Current
= 1 0 mA, VDD = 18V; Any Drain—710Ω
OUT
Duty cycle < 2%, t ≤ 300µsec—1.5—A
Duty cycle < 2%, t ≤ 300µsec> 500——mA
– 0.025——V
DD
——100mA
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1, CL = 1000 pF—2530nsec
Fall Time Figure 1, CL = 1000 pF—2530nsec
Delay Time Figure 1, CL = 1000 pF—1530nsec
Delay Time Figure 1, CL = 1000 pF—3250nsec
Power Supply
I
S
NOTE:1. Switching times guaranteed by design.
Power Supply Current VIN = 3V (Both Inputs)——4.5mA
VIN = 0V (Both Inputs)——0.4
4-220
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TC4404
TC4405
ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range
with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
SymbolParameterTest ConditionsMinTypMaxUnit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
NOTE1. Switching times guaranteed by design.
Logic 1 High Input Voltage2.4——V
Logic 0 Low Input Voltage——0.8V
Input Current– 0V ≤ V
High Output VoltageV
Low Output Voltage——0.025V
Output ResistanceI
Peak Output Current (Any Drain) Duty cycle <2%, t ≤ 300µsec
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain)Duty cycle <2%, t ≤ 300µsec
Avoid long power supply and ground traces (added
inductance causes unwanted voltage transients). Use power
and ground planes wherever possible. In addition, it is
advisable that low ESR bypass capacitors (4.7µF or 10µF
PIN CONFIGURATIONS (DIP AND SOIC)
V
18
DD
27
IN A
36
IN B
45
V
18
DD
27
IN A
36
IN B
45
TC4404
TC4405
A TOP
A BOTTOM
B TOP
B BOTTOMCOM
A TOP
A BOTTOM
B TOP
B BOTTOMCOM
tantalum) be placed as close to the driver as possible. The
driver should be physically located as close to the device it
is driving as possible to minimize the length of the output
trace.
V
18
DD
27
IN A
36
IN B
45
V
18
DD
27
IN A
36
IN B
45
TC4404
TC4405
A TOP
A BOTTOM
B TOP
B BOTTOMCOM
A TOP
A BOTTOM
B TOP
B BOTTOMCOM
6
7
8
TELCOM SEMICONDUCTOR, INC.
4-221
TC4404
TC4405
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
INPUT
2,38,7
INPUT: 100 kHz, square wave,
t
= t
RISE
FALL
V
DD
1
1
2
4
≤ 10 nsec
= 18V
4.7 µF
0.1 µF
OUTPUT
C = 1000 pF
L
+5V
INPUT
0V
18V
OUTPUT
0V
+5V
INPUT
0V
18V
OUTPUT
0V
10%
10%
t
D1
t
F
90%
10%
INVERTING DRIVER
90%
t
D1
NONINVERTING DRIVER
10%
t
R
t
D2
90%
t
D2
90%
10%
t
R
10%
90%
90%
t
F
Figure 1. Switching Time Test Circuit
4-222
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TYPICAL CHARACTERISTICS
1
TC4404
TC4405
100
80
60
(nsec)
40
RISE
t
20
2200 pF
1500 pF
1000 pF
470 pF
100 pF
0
4681012
V
DD
TA = +25°C
141618
Fall Time vs. Capacitive Load
100
TA = +25
80
60
(nsec)
40
FALL
t
20
0
100100010,000
°C
C
LOAD
(pF)
V
DD
10V
15V
Effect of Input Amplitude
on Delay Time
60
C
= 1000 pF
LOAD
50
40
30
DELAY TIME (nsec)
20
t
D1
VDD = 10V
TA= +25
t
D2
°C
= 5V
Fall Time vs. Supply VoltageRise Time vs. Supply Voltage
100
2200 pF
80
60
(nsec)
1000 pF
40
FALL
t
470 pF
20
100 pF
0
4681012
1500 pF
Rise and Fall Times
vs. Temperature
60
C
50
40
30
TIME (nsec)
20
10
–55 –35525 45 65 85 105 125–15
= 1000 pF
LOAD
V
= 17.5V
DD
t
FALL
TEMPERATURE (°C)
Propagation Delay Time
vs. Temperature
60
VDD = 17.5V
50
V
= 1000 pF
LOAD
40
30
20
10
DELAY TIME (nsec)
Rise TIme vs. Capacitive Load
100
TA = +25°C
V
141618
DD
TA = +25
80
60
(nsec)
40
RISE
t
20
0
100100010,000
°C
C
LOAD
(pF)
V
DD
10V
15V
= 5V
Propagation Delay
2
3
4
vs. Supply Voltage
60
50
40
C
TA = +25°C
t
D2
LOAD
= 1000 pF
5
30
DD
t
D1
141618
6
7
t
RISE
DELAY TIME (nsec)
20
10
4681012
V
Quiescent Supply Current
vs. Voltage
10
TA = +25
t
D2
BOTH INPUTS = 1
(mA)
1
QUIESCENT
I
t
D1
BOTH INPUTS = 0
°C
10
0246810
V
DRIVE
(V)
TELCOM SEMICONDUCTOR, INC.
–55 –35 –15 525 45 65 85 105 125
TEMPERATURE (°C)
0.1
4
VDD
186810121416
8
4-223
TC4404
TC4405
TYPICAL CHARACTERISTICS (Cont.)
Quiescent Supply Current
vs. Temperature
4.0
VDD = 18V
BOTH INPUTS = 1
3.5
(mA)
3.0
QUIESCENT
I
2.5
25
20
(Ω)
15
(DS(ON)
R
10
8
Pull-Up Output Resistance
WORST CASE
@ TJ = +150°C
TYP @ +25°C
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
Pull-Down Output Resistance
25
20
(Ω)
15
DS(ON)
R
10
8
WORST CASE
@ TJ = +150
TYP @ +25°C
°C
2.0
–55 –35 –15 5 25 45 65 85 105 125
TEMPERATURE (°C)
5
4681012
V
DD
141618
5
4681012
TYPICAL APPLICATIONS
Zero Crossover Current Totem-Pole SwitchDriving Bipolar Transistors
V
DD
(4.5V – 18V)
R
FROM TTL
TC4405
IB
R
IB
GND
REACH-UP AND REACH-DOWN DRIVING
+12V
+5V
(4.5V–18V)
FROM TTL
+24V
+12V
DIRECTION
(TTL LEVEL)
V
DD
GND
TC4404
R
T
R
T
Servo Motor Control
47 kΩ
15V
V
OUT
47 kΩ
0.1 µF0.1 µF
15V
V
DD
141618
+12V
SWITCHED
+12V
+5V
4-224
SPEED
(PWM)
GND
R
T
R
T
I
TC4404TC4469
SENSE
MOTOR
FROM TTL
GND
–12V
TC4404
GND
SWITCHED
–12V
–12V
TELCOM SEMICONDUCTOR, INC.
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