TelCom Semiconductor Inc TC43EPR, TC43CPR, TC43EOR, TC43COR Datasheet

LINEAR BUILDING BLOCK –
PRELIMINARY INFORMATION
VOL TAGE REFERENCE, DUAL OP AMP, DUAL COMPARATOR WITH SHUTDOWN MODE
EVALUATION
KIT
AVAILABLE
TC43
TC43
LINEAR BUILDING BLOCK – VOL TAGE REFERENCE, DUAL OP AMP, DUAL COMPARATOR WITH SHUTDOWN MODE

FEATURES

Combines Two Op Amps, Two Comparators and a
Voltage Reference into a Single Package
Optimized for Single Supply Operation
Small Package .......... 16-Pin SOIC or DIP (Narrow)
Ultra Low Input Bias Current ...... Less than 100pA
Low Quiescent
Current.....................10µA, 5µA in Shutdown Mode
Reference and One Comparator Remain Active in
Shutdown to Provide Supervisory Functions

APPLICATIONS

Power Supply Circuits
Embedded Systems
Instrumentation
Portable Equipment
Consumer Products
Replacements for Discrete Components

FUNCTIONAL BLOCK DIAGRAM

C1
A1
A1
A2
A2
IN
IN
IN
IN
OUT
+
+
+
AMP 1
+
AMP 2
CMPTR 1
+
V
A1
A2
C1
C1
DD
OUT
OUT
IN
IN
+

GENERAL DESCRIPTION

The TC43 is a mixed-function device combining two general purpose op amps, two general purpose compara­tors and a voltage reference in a single 16-pin package.
This increased integration allows the user to replace two or three packages, saving space, lowering supply current, and increasing system performance. A Shutdown input, SHDN, disables the op amps and one of the compara­tors, placing their outputs in a high-impedance state. The reference and one comparator stay active in Shutdown Mode. Standby power consumption is typically 5µA.
The TC43 is designed specifically for operation from a single supply, however, operation from dual supplies is also possible, and the power supply current drain is independent of the magnitude of the power supply voltage.
Packaged in a 16-pin narrow SOIC (0.150 wide) or 16-pin DIP, the TC43 is ideal for applications requiring high integration, small size and low power.

PIN CONFIGURATIONS (DIP and SOIC)

A1
A1 A2 A2
C1
OUT
C2
OUT
SHDN
V
+
1
IN
2
IN
+
IN
3
IN
4
TC43CPR TC43EPR
5 6 7 8
SS
16 15 14 13 12 11 10
V
DD
A1
OUT
A2
OUT
C1
IN
C1
IN
C2
IN
C2
IN
V
9
REF
A1
1
+
IN
A1
2
IN
A2
+
3
IN
A2
4
C1
OUT
C2
OUT
SHDN
V
IN
SS
5 6 7
8
TC43COR TC43EOR
+ – + –
16 15 14 13 12 11 10
V
DD
A1
OUT
A2
OUT
C1
+
IN
C1
IN
C2
+
IN
C2
IN
V
9
REF

ORDERING INFORMATION

C2
OUT
SHDN
+
CMPTR 2
C2
C2
+
IN
IN
Part No. Package Temp. Range
TC43COR 16-Pin SOIC (Narrow) 0°C to +70°C TC43CPR 16-Pin Plastic DIP (Narrow) 0°C to +70°C TC43EOR 16-Pin SOIC (Narrow) – 40°C to +85°C
V
SS
TC43-1 3/12/97 TelCom Semiconductor reserves the right to make changes in the circuitry and specifications of its devices.
V
REF
+
TC43EPR 16-Pin Plastic DIP (Narrow) – 40°C to +85°C
TC43EV Evaluation Kit for TC43
1
PRELIMINARY INFORMATION
TC43
LINEAR BUILDING BLOCK –
VOL TAGE REFERENCE, DUAL OP AMP,
DUAL COMP ARATOR WITH SHUTDOWN MODE
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ..............................................................6V
Package Power Dissipation (
PDIP ..............................................................840mW
SOIC (Narrow)................................................700mW
Voltage on Any Pin:
(With Respect to GND)........
Operating Temperature Range:
C Suffix ................................................. 0°C to +70°C
TA 70°C)
(V
SS
– 0.3V) to (VDD +0.3V)
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
* Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
E Suffix ............................................– 40°C to + 85°C
ELECTRICAL CHARACTERISTICS: T
= Over Operating Temperature Range, V
A
= 5.0V ±10%, V
DD
SS
= 0V,
SHDN = VDD, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
V
DD
I
Q
I
SHDN
Supply Voltage 1.8 5.5 V Supply Current, Operating All Outputs Open 10 15 µA Supply Current, Shutdown Mode All Outputs Open 5 8 µA
(Note 1)
Shutdown Input
V
IH
V
IL
I
IL
Input High Voltage 80% V
DD
Input Low Voltage 20% V
——V
DD
V
Input Current 1 µA
Op Amps
T
SEL
T
DESEL
A
VOL
V
ICMR
V
OS
I
B
V
OS (DRIFT)
GBWP Gain-Bandwidth Product 4 7 kHz SR Slew Rate Gain = 1, VIN = 4.0
V
OUT
CMRR Common Mode Rejection Ratio 80 dB PSRR Power Supply Rejection Ratio (4.5V to 5.5V) 80 dB
R
(SD) Output Resistance in Shutdown SHDN = V
OUT
C
(SD) Output Capacitance in Shutdown SHDN = V
OUT
I
SRC
I
SINK
Select Time (V
from SHDN = VIH) 2 msec
OUT
Deselect Time (HI-Z from SHDN = VIL)—5µsec Large Signal Voltage Gain Common Mode Input Voltage Range 1.8 < VDD < 5.5V V
CL = 100pF, RL = 47k
100 dB
SS
—VDD – 1.0 V Input Offset Voltage VCM = (VDD – VSS)/2 –10 ±1.0 +10 mV Input Bias Current 50 pA Average Input Offset Voltage Drift 30 µV/°C
2 V/msec
= 100pF, RL = 1M
C
L
to V
SS
P-P
Output Signal Swing RL = 47k VSS + .20 VDD – .15 V
20 M
3820mA
DC Output Source Current VIN = V
Output Shorted to V
SS
(Note 5) 40 55 pF
SS
DD
SS
(Note 2)
DC Output Sink Current VIN = V
Output Shorted to V
SS
DD
0.6 1.2 5 mA
(Note 2)
Comparators
T
SEL
CMPTR1 Select Time 5 µsec (V
from SHDN = VIH)
OUT
2
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