LINEAR BUILDING BLOCK –
PRELIMINARY INFORMATION
VOL TAGE REFERENCE, DUAL OP AMP,
DUAL COMPARATOR WITH SHUTDOWN MODE
EVALUATION
KIT
AVAILABLE
TC43
TC43
LINEAR BUILDING BLOCK – VOL TAGE REFERENCE, DUAL OP AMP,
DUAL COMPARATOR WITH SHUTDOWN MODE
FEATURES
■ Combines Two Op Amps, Two Comparators and a
Voltage Reference into a Single Package
■ Optimized for Single Supply Operation
■ Small Package .......... 16-Pin SOIC or DIP (Narrow)
■ Ultra Low Input Bias Current ...... Less than 100pA
■ Low Quiescent
Current.....................10µA, 5µA in Shutdown Mode
■ Reference and One Comparator Remain Active in
Shutdown to Provide Supervisory Functions
APPLICATIONS
■ Power Supply Circuits
■ Embedded Systems
■ Instrumentation
■ Portable Equipment
■ Consumer Products
■ Replacements for Discrete Components
FUNCTIONAL BLOCK DIAGRAM
C1
A1
A1
A2
A2
IN
IN
IN
IN
OUT
+
–
+
–
+
AMP 1
–
+
AMP 2
–
CMPTR 1
+
–
V
A1
A2
C1
C1
DD
OUT
OUT
IN
IN
+
–
GENERAL DESCRIPTION
The TC43 is a mixed-function device combining two
general purpose op amps, two general purpose comparators and a voltage reference in a single 16-pin package.
This increased integration allows the user to replace
two or three packages, saving space, lowering supply
current, and increasing system performance. A Shutdown
input, SHDN, disables the op amps and one of the comparators, placing their outputs in a high-impedance state. The
reference and one comparator stay active in Shutdown
Mode. Standby power consumption is typically 5µA.
The TC43 is designed specifically for operation from a
single supply, however, operation from dual supplies is also
possible, and the power supply current drain is independent
of the magnitude of the power supply voltage.
Packaged in a 16-pin narrow SOIC (0.150 wide) or
16-pin DIP, the TC43 is ideal for applications requiring high
integration, small size and low power.
PIN CONFIGURATIONS (DIP and SOIC)
A1
A1
A2
A2
C1
OUT
C2
OUT
SHDN
V
+
1
IN
–
2
IN
+
IN
3
–
IN
4
TC43CPR
TC43EPR
5
6
7
8
SS
16
15
14
13
12
11
10
V
DD
A1
OUT
A2
OUT
C1
IN
C1
IN
C2
IN
C2
IN
V
9
REF
A1
1
+
IN
A1
2
–
IN
A2
+
3
IN
A2
–
4
C1
OUT
C2
OUT
SHDN
V
IN
SS
5
6
7
8
TC43COR
TC43EOR
+
–
+
–
16
15
14
13
12
11
10
V
DD
A1
OUT
A2
OUT
C1
+
IN
C1
–
IN
C2
+
IN
C2
–
IN
V
9
REF
ORDERING INFORMATION
C2
OUT
SHDN
+
CMPTR 2
–
C2
C2
+
IN
–
IN
Part No. Package Temp. Range
TC43COR 16-Pin SOIC (Narrow) 0°C to +70°C
TC43CPR 16-Pin Plastic DIP (Narrow) 0°C to +70°C
TC43EOR 16-Pin SOIC (Narrow) – 40°C to +85°C
V
SS
TC43-1 3/12/97 TelCom Semiconductor reserves the right to make changes in the circuitry and specifications of its devices.
V
REF
+
TC43EPR 16-Pin Plastic DIP (Narrow) – 40°C to +85°C
TC43EV Evaluation Kit for TC43
1
PRELIMINARY INFORMATION
TC43
LINEAR BUILDING BLOCK –
VOL TAGE REFERENCE, DUAL OP AMP,
DUAL COMP ARATOR WITH SHUTDOWN MODE
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ..............................................................6V
Package Power Dissipation (
PDIP ..............................................................840mW
SOIC (Narrow)................................................700mW
Voltage on Any Pin:
(With Respect to GND)........
Operating Temperature Range:
C Suffix ................................................. 0°C to +70°C
TA ≤ 70°C)
(V
SS
– 0.3V) to (VDD +0.3V)
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
E Suffix ............................................– 40°C to + 85°C
ELECTRICAL CHARACTERISTICS: T
= Over Operating Temperature Range, V
A
= 5.0V ±10%, V
DD
SS
= 0V,
SHDN = VDD, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
V
DD
I
Q
I
SHDN
Supply Voltage 1.8 — 5.5 V
Supply Current, Operating All Outputs Open — 10 15 µA
Supply Current, Shutdown Mode All Outputs Open — 5 8 µA
(Note 1)
Shutdown Input
V
IH
V
IL
I
IL
Input High Voltage 80% V
DD
Input Low Voltage — — 20% V
——V
DD
V
Input Current — — 1 µA
Op Amps
T
SEL
T
DESEL
A
VOL
V
ICMR
V
OS
I
B
V
OS (DRIFT)
GBWP Gain-Bandwidth Product 4 7 — kHz
SR Slew Rate Gain = 1, VIN = 4.0
V
OUT
CMRR Common Mode Rejection Ratio — 80 — dB
PSRR Power Supply Rejection Ratio (4.5V to 5.5V) — 80 — dB
R
(SD) Output Resistance in Shutdown SHDN = V
OUT
C
(SD) Output Capacitance in Shutdown SHDN = V
OUT
I
SRC
I
SINK
Select Time (V
from SHDN = VIH) — 2 — msec
OUT
Deselect Time (HI-Z from SHDN = VIL)—5—µsec
Large Signal Voltage Gain
Common Mode Input Voltage Range 1.8 < VDD < 5.5V V
CL = 100pF, RL = 47kΩ
— 100 — dB
SS
—VDD – 1.0 V
Input Offset Voltage VCM = (VDD – VSS)/2 –10 ±1.0 +10 mV
Input Bias Current — 50 — pA
Average Input Offset Voltage Drift — 30 — µV/°C
— 2 — V/msec
= 100pF, RL = 1MΩ
C
L
to V
SS
P-P
Output Signal Swing RL = 47kΩ VSS + .20 — VDD – .15 V
20 — — MΩ
3820mA
DC Output Source Current VIN = V
Output Shorted to V
SS
(Note 5) — 40 55 pF
SS
DD
SS
(Note 2)
DC Output Sink Current VIN = V
Output Shorted to V
SS
DD
0.6 1.2 5 mA
(Note 2)
Comparators
T
SEL
CMPTR1 Select Time — 5 — µsec
(V
from SHDN = VIH)
OUT
2