TelCom Semiconductor Inc TC428EOA, TC428CPA, TC428COA, TC427MJA, TC427IJA Datasheet

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC426

1

TC427
TC428

FEATURES

■ High-Speed Switching (CL = 1000pF)...........30nsec

■ High Peak Output Current................................. 1.5A

■ High Output Voltage Swing .................. V

■ Low Input Current (Logic "0" or "1") ................ 1µA

■ TTL/CMOS Input Compatible

■ Available in Inverting and Noninverting

Configurations

■ Wide Operating Supply Voltage ............4.5V to 18V

■ Current Consumption

— Inputs Low .................................................. 0.4mA

— Inputs High .................................................... 8mA

■ Single Supply Operation

■ Low Output Impedance ........................................ 6Ω

■ Pinout Equivalent of DS0026 and MMH0026

■ Latch-Up Resistant: Withstands > 500mA

Reverse Current

■ ESD Protected......................................................2kV

PIN CONFIGURATIONS (DIP and SOIC)

1

NC

2

IN A

3

NC

NC

TC426

4

1
2
3

TC427

4

1
2

TC428

3
4

GND

IN B

IN A

GND

IN B

IN A

GND

IN B

NC = NO INTERNAL CONNECTION

8

NC
OUT A

7

V

6
5

OUT B

8

NC
OUT A

7

V

6
5

OUT B

8

NC
OUT A

7

V

6
5

OUT B

DD

DD

DD

2, 4 7, 5

INVERTING

2, 4 7, 5

NONINVERTING

27

45

COMPLEMENTARY

FUNCTIONAL BLOCK DIAGRAM

+

V

TC426

500µA

2.5mA

INPUT

Note: The TC428 has one inverting and one noninverting

driver. Ground any unused driver input.

TC427
TC428

NONINVERTING

OUTPUT

TELCOM SEMICONDUCTOR, INC.

– 25mV

DD

GND + 25mV

INVERTING

OUTPUT

(TC426)(TC427)

GENERAL DESCRIPTION

The TC426/TC427/TC428 are dual CMOS high-speed
drivers. A TTL/CMOS input voltage level is translated into
a rail-to-rail output voltage level swing. The CMOS output
is within 25 mV of ground or positive supply.

The low impedance, high-current driver outputs swing
a 1000pF load 18V in 30nsec. The unique current and
voltage drive qualities make the TC426/TC427/TC428 ideal
power MOSFET drivers, line drivers, and DC-to-DC
converter building blocks.

Input logic signals may equal the power supply volt­age. Input current is a low 1µA, making direct interface to
CMOS/bipolar switch-mode power supply control ICs pos­sible, as well as open-collector analog comparators.

Quiescent power supply current is 8mA maximum. The
TC426 requires 1/5 the current of the pin-compatible bipo­lar DS0026 device. This is important in DC-to-DC con­verter applications with power efficiency constraints and
high-frequency switch-mode power supply applications. Qui­escent current is typically 6mA when driving a 1000pF load
18V at 100kHz.

The inverting TC426 driver is pin-compatible with the
bipolar DS0026 and MMH0026 devices. The TC427 is
noninverting; the TC428 contains an inverting and non­inverting driver.

Other pin compatible driver families are the TC1426/
27/28, TC4426/27/28, and TC4426A/27A/28A.

ORDERING INFORMATION

Temperature

Part No. Package Configuration Range

TC426COA 8-Pin SOIC Inverting 0°C to +70°C
TC426CPA 8-Pin PDIP Inverting 0°C to +70°C
TC426EOA 8-Pin SOIC Inverting –40°C to +85°C
TC426EPA 8-Pin SOIC Complementary –40°C to +85°C
TC426IJA 8-Pin CerDIP Inverting –25°C to +85°C
TC426MJA 8-Pin CerDIP Inverting –55°C to +125°C
TC427COA 8-Pin SOIC Noninverting 0°C to +70°C
TC427CPA 8-Pin PDIP Noninverting 0°C to +70°C
TC427EOA 8-Pin SOIC Noninverting –40°C to +85°C
TC427EPA 8-Pin SOIC Complementary –40°C to +85°C
TC427IJA 8-Pin CerDIP Noninverting –25°C to +85°C
TC427MJA 8-Pin CerDIP Noninverting –55°C to +125°C
TC428COA 8-Pin SOIC Complementary 0°C to +70°C
TC428CPA 8-Pin PDIP Complementary 0°C to +70°C
TC428EOA 8-Pin SOIC Complementary –40°C to +85°C
TC428EPA 8-Pin SOIC Complementary –40°C to +85°C
TC428IJA 8-Pin CerDIP Complementary –25°C to +85°C
TC428MJA 8-Pin CerDIP Complementary –55°C to +125°C

TC426/7/8-7 10/11/96

4-169

2

3

4

5

6

7

8

TC426
TC427
TC428

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, Any Terminal.... V

Power Dissipation (TA ≤ 70°C)

Plastic ...............................................................730mW

CerDIP ..............................................................800mW

SOIC .................................................................470mW

Derating Factor

Plastic ............................................................. 8mW/°C

ELECTRICAL CHARACTERISTICS: T

+ 0.3V to GND – 0.3V

DD

= +25°C with 4.5V ≤ V

A

CerDIP ......................................................... 6.4mW/°C

SOIC ............................................................... 4mW/°C

Operating Temperature Range

C Version .................................................0°C to +70°C

I Version..............................................– 25°C to +85°C

E Version ............................................ – 40°C to +85°C

M Version..........................................– 55°C to +125°C

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

≤ 18V, unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit

Input

V

IH

V

IL

I

IN

Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

–1 — 1 µA

Output

V

OH

V

OL

R

OH

R

OL

I

PK

High Output Voltage V

– 0.025 — — V

DD

Low Output Voltage — — 0.025 V
High Output Resistance I
Low Output Resistance I

= 10 mA, VDD = 18V — 10 15 Ω

OUT

= 10 mA, VDD = 18V — 6 10 Ω

OUT

Peak Output Current — 1.5 — A

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Test Figure 1/2 — — 30 nsec
Fall Time Test Figure 1/2 — — 30 nsec
Delay Time Test Figure 1/2 — — 50 nsec
Delay Time Test Figure 1/2 — — 75 nsec

Power Supply

I

S

Power Supply Current VIN = 3V (Both Inputs) — — 8 mA

VIN = 0V (Both Inputs) — — 0.4 mA

ELECTRICAL CHARACTERISTICS:

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

OH

R

OL

Switching Time (Note 1)
t

R

t

F

t

D1

t

D2

Power Supply

I

S

NOTE: 1. Switching times guaranteed by design.

4-170

Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

High Output Voltage V
Low Output Voltage — — 0.025 V
High Output Resistance I
Low Output Resistance I

Rise Time Test Figure 1/2 — — 60 nsec
Fall Time Test Figure 1/2 — — 30 nsec
Delay Time Test Figure 1/2 — — 75 nsec
Delay Time Test Figure 1/2 — — 120 nsec

Power Supply Current VIN = 3V (Both Inputs) — — 12 mA

Over Operating Temperature Range with 4.5V ≤ V

DD

= 10 mA, VDD = 18V — 13 20 Ω

OUT

= 10 mA, VDD = 18V — 8 15 Ω

OUT

–10 — 10 µA

– 0.025 — — V

DD

≤ 18V, unless otherwise specified.

DD

VIN = 0V (Both Inputs) — — 0.6 mA

TELCOM SEMICONDUCTOR, INC.