Datasheet TC428EOA, TC428CPA, TC428COA, TC427MJA, TC427IJA Datasheet (TelCom Semiconductor)
...
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC426
1
TC427
TC428
FEATURES
■ High-Speed Switching (CL = 1000pF)...........30nsec
■ High Peak Output Current................................. 1.5A
■ High Output Voltage Swing .................. V
■ Low Input Current (Logic "0" or "1") ................ 1µA
■ TTL/CMOS Input Compatible
■ Available in Inverting and Noninverting
Configurations
■ Wide Operating Supply Voltage ............4.5V to 18V
■ Current Consumption
— Inputs Low .................................................. 0.4mA
— Inputs High .................................................... 8mA
■ Single Supply Operation
■ Low Output Impedance ........................................ 6Ω
■ Pinout Equivalent of DS0026 and MMH0026
■ Latch-Up Resistant: Withstands > 500mA
Reverse Current
■ ESD Protected......................................................2kV
PIN CONFIGURATIONS (DIP and SOIC)
1
NC
2
IN A
3
NC
NC
TC426
4
1
2
3
TC427
4
1
2
TC428
3
4
GND
IN B
IN A
GND
IN B
IN A
GND
IN B
NC = NO INTERNAL CONNECTION
8
NC
OUT A
7
V
6
5
OUT B
8
NC
OUT A
7
V
6
5
OUT B
8
NC
OUT A
7
V
6
5
OUT B
DD
DD
DD
2, 4 7, 5
INVERTING
2, 4 7, 5
NONINVERTING
27
45
COMPLEMENTARY
FUNCTIONAL BLOCK DIAGRAM
+
V
TC426
500µA
2.5mA
INPUT
Note: The TC428 has one inverting and one noninverting
driver. Ground any unused driver input.
TC427
TC428
NONINVERTING
OUTPUT
TELCOM SEMICONDUCTOR, INC.
– 25mV
DD
GND + 25mV
INVERTING
OUTPUT
(TC426)(TC427)
GENERAL DESCRIPTION
The TC426/TC427/TC428 are dual CMOS high-speed
drivers. A TTL/CMOS input voltage level is translated into
a rail-to-rail output voltage level swing. The CMOS output
is within 25 mV of ground or positive supply.
The low impedance, high-current driver outputs swing
a 1000pF load 18V in 30nsec. The unique current and
voltage drive qualities make the TC426/TC427/TC428 ideal
power MOSFET drivers, line drivers, and DC-to-DC
converter building blocks.
Input logic signals may equal the power supply voltage. Input current is a low 1µA, making direct interface to
CMOS/bipolar switch-mode power supply control ICs possible, as well as open-collector analog comparators.
Quiescent power supply current is 8mA maximum. The
TC426 requires 1/5 the current of the pin-compatible bipolar DS0026 device. This is important in DC-to-DC converter applications with power efficiency constraints and
high-frequency switch-mode power supply applications. Quiescent current is typically 6mA when driving a 1000pF load
18V at 100kHz.
The inverting TC426 driver is pin-compatible with the
bipolar DS0026 and MMH0026 devices. The TC427 is
noninverting; the TC428 contains an inverting and noninverting driver.
Other pin compatible driver families are the TC1426/
27/28, TC4426/27/28, and TC4426A/27A/28A.
ORDERING INFORMATION
Temperature
Part No. Package Configuration Range
TC426COA 8-Pin SOIC Inverting 0°C to +70°C
TC426CPA 8-Pin PDIP Inverting 0°C to +70°C
TC426EOA 8-Pin SOIC Inverting –40°C to +85°C
TC426EPA 8-Pin SOIC Complementary –40°C to +85°C
TC426IJA 8-Pin CerDIP Inverting –25°C to +85°C
TC426MJA 8-Pin CerDIP Inverting –55°C to +125°C
TC427COA 8-Pin SOIC Noninverting 0°C to +70°C
TC427CPA 8-Pin PDIP Noninverting 0°C to +70°C
TC427EOA 8-Pin SOIC Noninverting –40°C to +85°C
TC427EPA 8-Pin SOIC Complementary –40°C to +85°C
TC427IJA 8-Pin CerDIP Noninverting –25°C to +85°C
TC427MJA 8-Pin CerDIP Noninverting –55°C to +125°C
TC428COA 8-Pin SOIC Complementary 0°C to +70°C
TC428CPA 8-Pin PDIP Complementary 0°C to +70°C
TC428EOA 8-Pin SOIC Complementary –40°C to +85°C
TC428EPA 8-Pin SOIC Complementary –40°C to +85°C
TC428IJA 8-Pin CerDIP Complementary –25°C to +85°C
TC428MJA 8-Pin CerDIP Complementary –55°C to +125°C
TC426/7/8-7 10/11/96
4-169
2
3
4
5
6
7
8
TC426
TC427
TC428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal.... V
Power Dissipation (TA ≤ 70°C)
Plastic ...............................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................470mW
Derating Factor
Plastic ............................................................. 8mW/°C
ELECTRICAL CHARACTERISTICS: T
+ 0.3V to GND – 0.3V
DD
= +25°C with 4.5V ≤ V
A
CerDIP ......................................................... 6.4mW/°C
SOIC ............................................................... 4mW/°C
Operating Temperature Range
C Version .................................................0°C to +70°C
I Version..............................................– 25°C to +85°C
E Version ............................................ – 40°C to +85°C
M Version..........................................– 55°C to +125°C
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
≤ 18V, unless otherwise specified.
DD
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V
DD
–1 — 1 µA
Output
V
OH
V
OL
R
OH
R
OL
I
PK
High Output Voltage V
– 0.025 — — V
DD
Low Output Voltage — — 0.025 V
High Output Resistance I
Low Output Resistance I
= 10 mA, VDD = 18V — 10 15 Ω
OUT
= 10 mA, VDD = 18V — 6 10 Ω
OUT
Peak Output Current — 1.5 — A
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Test Figure 1/2 — — 30 nsec
Fall Time Test Figure 1/2 — — 30 nsec
Delay Time Test Figure 1/2 — — 50 nsec
Delay Time Test Figure 1/2 — — 75 nsec
Power Supply
I
S
Power Supply Current VIN = 3V (Both Inputs) — — 8 mA
VIN = 0V (Both Inputs) — — 0.4 mA
ELECTRICAL CHARACTERISTICS:
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
OH
R
OL
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
NOTE: 1. Switching times guaranteed by design.
4-170
Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V
High Output Voltage V
Low Output Voltage — — 0.025 V
High Output Resistance I
Low Output Resistance I
Rise Time Test Figure 1/2 — — 60 nsec
Fall Time Test Figure 1/2 — — 30 nsec
Delay Time Test Figure 1/2 — — 75 nsec
Delay Time Test Figure 1/2 — — 120 nsec
Power Supply Current VIN = 3V (Both Inputs) — — 12 mA
Over Operating Temperature Range with 4.5V ≤ V
DD
= 10 mA, VDD = 18V — 13 20 Ω
OUT
= 10 mA, VDD = 18V — 8 15 Ω
OUT
–10 — 10 µA
– 0.025 — — V
DD
≤ 18V, unless otherwise specified.
DD
VIN = 0V (Both Inputs) — — 0.6 mA
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
1
TC426
TC427
TC428
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
SUPPLY BYPASSING
Charging and discharging large capacitive loads quickly
requires large currents. For example, charging a 1000-pF
load to18V in 25nsec requires an 0.72A current from the
device power supply.
To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic
disk capacitors with short lead lengths (< 0.5 in.) should be
used. A 1 µF film capacitor in parallel with one or two
0.1 µF ceramic disk capacitors normally provides adequate
bypassing.
GROUNDING
The TC426 and TC428 contain inverting drivers. Ground
potential drops developed in common ground impedances
from input to output will appear as negative feedback and
degrade switching speed characteristics.
Individual ground returns for the input and output
circuits or a ground plane should be used.
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
effect device reliability.
The TC426/427/428 CMOS drivers have greatly reduced quiescent DC power consumption. Maximum quiescent current is 8 mA compared to the DS0026 40 mA
specification. For a 15V supply, power dissipation is typically 40 mW.
Two other power dissipation components are:
• Output stage AC and DC load power.
• Transition state power.
Output stage power is:
Po = PDC + PAC
= Vo (IDC) + f CL V
Where:
Vo = DC output voltage
IDC = DC output load current
f = Switching frequency
Vs = Supply voltage
S
2
3
4
INPUT STAGE
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage
transistor drives a 2.5mA current source load. With a logic
"1" input, the maximum quiescent supply current is 8 mA.
Logic "0" input level signals reduce quiescent current to
0.4 mA maximum. Minimum power dissipation occurs for
logic "0" inputs for the TC426/427/428. Unused driver
inputs must be connected to VDD or GND.
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output stage
current spiking when changing states. Input voltage thresholds are approximately 1.5V, making the device TTL compatible over the 4.5V to 18V supply operating range. Input
current is less than 1 µA over this range.
The TC426/427/428 may be directly driven by the
TL494, SG1526/1527, SG1524, SE5560, and similar switchmode power supply integrated circuits.
POWER DISSIPATION
The supply current vs frequency and supply current vs
capacitive load characteristic curves will aid in determining
power dissipation calculations.
In power MOSFET drive applications the PDC term is
negligible. MOSFET power transistors are high impedance, capacitive input devices. In applications where resistive loads or relays are driven, the PDC component will
normally dominate.
The magnitude of PAC is readily estimated for several
cases:
A. B.
1. f = 20kHZ 1. f = 200kHz
2. CL=1000pf 2. CL=1000pf
3. Vs = 18V 3. VS =15V
4. PAC= 65mW 4. PAC= 45mW
During output level state changes, a current surge will
flow through the series connected N and P channel output
MOSFETS as one device is turning "ON" while the other is
turning "OFF". The current spike flows only during output
transitions. The input levels should not be maintained between the logic "0" and logic "1" levels. Unused driver
inputs must be tied to ground and not be allowed to
float. Average power dissipation will be reduced by mini-
mizing input rise times. As shown in the characteristic
curves, average supply current is frequency dependent.
5
6
7
TELCOM SEMICONDUCTOR, INC.
8
4-171
TC426
TC427
TC428
TYPICAL CHARACTERISTICS
Rise and Fall Times vs
70
60
50
40
30
TIME (nsec)
20
10
0
100
90
80
70
60
50
DELAY TIME (nsec)
40
30
–25 50 100 150
30
20
10
SUPPLY CURRENT (mA)
Supply Voltage
C
= 1000pF
L
T
= +25
°C
A
5
10 15 20
SUPPLY VOLTAGE (V)
Delay Times vs Temperature
C
= 1000pF
L
V
= 18V
DD
25 75 125
0
TEMPERATURE (°C)
t
D2
t
D1
Supply Current vs Frequency
T
= +25
A
C
L
°C
= 1000pF
V
= 18V
DD
10V
t
R
t
F
5V
Delay Times vs Supply Voltage
90
80
70
60
50
40
DELAY TIME (nsec)
30
0
5101520
SUPPLY VOLTAGE (V)
Supply Current vs
Capacitive Load
80
T
= +25°C
A
70
V
= 18V
DD
60
50
40
30
20
SUPPLY CURRENT (mA)
10
0
10
100 1000 10K
CAPACITIVE LOAD (pF)
200kHz
High Output vs Voltage
2.20
T
= +25
°C
A
1.76
1.32
0.88
DD OUT
V – V (V)
0.44
C
L
T
= +25
A
V
DD
= 1000pF
°C
t
D2
t
D1
400kHz
20kHz
= 8V
13V
18V
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
Rise and Fall Times vs
Temperature
40
C
= 1000 pF
L
V
= 18V
35
DD
30
25
20
TIME (nsec)
15
10
0
–25 0 25 150
Rise and Fall Times vs
1K
T
= +25°C
A
V
DD
100
10
TIME (nsec)
1
10
Low Output vs Voltage
1.20
T
= +25
A
0.96
0.72
0.48
OUTPUT VOLTAGE (V)
0.24
50 75 100 125
TEMPERATURE (
°C)
Capacitive Load
= 18V
100
CAPACITIVE LOAD (pF)
°C
1000 10K
V
= 5V
DD
15V
t
t
10V
R
F
t
R
t
F
4-172
0
1
10 100 1000
FREQUENCY (kHz)
Supply Voltage vs
Quiescent Supply Current
20
NO LOAD
BOTH INPUTS LOGIC "1"
T = +25°C
A
15
10
5
SUPPLY VOLTAGE (V)
0
123456
SUPPLY CURRENT (mA)
10
0
20 30 40 50 60 708090 100
CURRENT SOURCED (mA)
Supply Voltage vs
Quiescent Supply Current
20
NO LOAD
BOTH INPUTS LOGIC "0"
T = +25°C
A
15
10
5
SUPPLY VOLTAGE (V)
0
0
50 100 150 200 250 300
SUPPLY CURRENT (µA)
10
0
20 30 40 50 60 70 80 90 100
CURRENT SUNK (mA)
1600
1400
1200
1000
800
600
MAX. POWER (mW)
400
200
0
0
8 Pin CerDIP
8 Pin SOIC
10 20
Thermal Derating Curves
8 Pin DIP
30 40
50 60
AMBIENT TEMPERATURE (°C)
70
80 90 100 110 120
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
V
= 18V
DD
1
TC426
TC427
TC428
= 18V
V
DD
1µF
INPUT
INPUT: 100kHz,
square wave,
t
RISE
OUTPUT
Test Figure 1. Inverting Driver Switching Time Test Circuit Test Figure 2. Noninverting Driver Switching Time Test Circuit
= tF
ALL
+5V
INPUT
0V
18V
0V
≤ 10nsec
10%
(1/2 TC428)
t
D1
90%
10%
1
2
TC426
t
F
µF
0.1
OUTPUT
C = 1000pF
L
90%
t
D2
t
R
10%
90%
INPUT: 100kHz,
square wave,
t
= tF
RISE
+5V
INPUT
0V
18V
OUTPUT
0V
ALL
INPUT
≤ 10nsec
10%
TC427
(1/2 TC428)
90%
t
D1
1
2
10%
1µF
t
R
0.1
µF
OUTPUT
C = 1000pF
L
90%
t
D2
10%
VOLTAGE DOUBLER
0.1µF
f = 10kHz
IN
2
+ 15V
1/2
TC426
+
4.7µF
–
6
7
3
–
10µF
+
1N4001
1N4001
V
OUT
+
47µF
–
30.
29.
28.
27.
26.
OUT
25.
V (V)
24.
23.
22.
0
10 20 30 40 50 60 70 80 90
I (mA)
OUT
90%
100
2
3
4
t
F
5
6
VOLTAGE INVERTER
+ 15V
+–
0.1µF 4.7µF
6
2
1/2
TC426
f = 10kHz
IN
TELCOM SEMICONDUCTOR, INC.
7
3
+–
10µF
1N4001
1N4001
-5
-6
-7
-8
-9
OUT
-10
V (V)
V
OUT
–
47µF
+
-11
-12
-13
-14
10 20 30 40 50 60 70 80 90
0
I (mA)
OUT
100
4-173
7
8
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