Datasheet TC1426CPA, TC1426COA, TC142CPA, TC1428COA, TC1427CPA Datasheet (TelCom Semiconductor)
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TELCOM SEMICONDUCTOR, INC.
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TC1426
TC1427
TC1428
GENERAL DESCRIPTION
The TC1426/27/28 are a family of 1.2A dual high- speed
drivers. CMOS fabrication is used for low power consumption and high efficiency.
These devices are fabricated using an epitaxial layer to
effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other
design and process refinements to increase their long-term
reliability.
The TC1426 is compatible with the bipolar DS0026, but
only draws 1/5 of the quiescent current. The TC1426/27/28
are also compatible with the TC426/27/28, but with 1.2A
peak output current rather than the 1.5A of the TC426/27/28
devices.
Other compatible drivers are the TC4426/27/28 and the
TC4426A/27A/28A. The TC4426/27/28 have the added
feature that the inputs can withstand negative voltage up to
5V with diode protection circuits. The TC4426A/27A/28A
have matched input to output leading edge and falling edge
delays, tD1 and tD2, for processing short duration pulses in
the 25 nanoseconds range. All of the above drivers are pin
compatible.
The high-input impedance TC1426/27/28 drivers are
CMOS/TTL input-compatible, do not require the speed-up
needed by the bipolar devices, and can be directly driven by
most PWM ICs.
This family of devices is available in inverting and noninverting versions. Specifications have been optimized to
achieve low-cost and high-performance devices, well-suited
for the high-volume manufacturer.
FEATURES
■ Low Cost
■ Latch-Up Protected: Will Withstand 500 mA Reverse
Output Current
■ ESD Protected...................................................±2 kV
■ High Peak Output Current........................ 1.2A Peak
■ High Capacitive Load Drive
Capability...................................... 1000pF in 38nsec
■ Wide Operating Range ...........................4.5V to 16V
■ Low Delay Time......................................75nsec Max
■ Logic Input Threshold Independent of
Supply Voltage
■ Output Voltage Swing to Within 25mV of
Ground or V
DD
■ Low Output Impedance ........................................ 8Ω
APPLICATIONS
■ Power MOSFET Drivers
■ Switched Mode Power Supplies
■ Pulse Transformer Drive
■ Small Motor Controls
■ Print Head Drive
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
ORDERING INFORMATION
Part No. Package Temp. Range
TC1426COA 8-Pin SOIC 0°C to +70°C
TC1426CPA 8-Pin Plastic DIP 0°C to +70°C
TC1427COA 8-Pin SOIC 0°C to +70°C
TC1427CPA 8-Pin Plastic DIP 0°C to +70°C
TC1428COA 8-Pin SOIC 0°C to +70°C
TC1428CPA 8-Pin Plastic DIP 0°C to +70°C
TC1426CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO CONNECTION
2, 4 7, 5
INVERTING
TC1427CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2, 4 7, 5
NON-INVERTING
TC1428CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
27
45
V
DD
V
DD
TC1426COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO CONNECTION
2, 4 7, 5
INVERTING
TC1427COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2, 4 7, 5
NON-INVERTING
TC1428COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
27
45
V
DD
V
DD
PIN CONFIGURATIONS
INPUT
V
+
'
2.5mA
'
500µA
NOTE: TC1428 has one inverting and one noninverting driver.
Ground any unused driver input.
INVERTING
OUTPUT
NONINVERTING
OUTPUT
(TC1426)(TC1427)
GND
TC1426 INVERTING
TC1427 NONINVERTING
TC1428 INVERTING/NONINVERTING
FUNCTIONAL BLOCK DIAGRAM
TC1426/7/8-8 10/11/96
4-208
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ELECTRICAL CHARACTERISTICS: T
A
= 25°C with 4.5V ≤ V
DD
+
≤ 16V unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
Logic 1, Input Voltage 3 — — V
V
IL
Logic 0, Input Voltage — — 0.8 V
I
IN
Input Current 0V ≤ VIN ≤ V
DD
– 1 — 1 µA
Output
V
OH
High Output Voltage Test Figures 1 and 2 V
DD
– 0.025 — — V
V
OL
Low Output Voltage Test Figures 1 and 2 — — 0.025 V
R
O
Output Resistance VIN = 0.8V, — 12 18 Ω
I
OUT
= 10 mA, VDD = 16V
VIN = 3V, — 8 12
I
OUT
= 10 mA, VDD = 16V
I
PK
Peak Output Current — 1.2 — A
I Latch-Up Current Withstand Reverse Current > 500 — — mA
Switching Time (Note 1)
t
R
Rise Time Test Figures 1 and 2 — — 35 nsec
t
F
Fall Time Test Figures 1 and 2 — — 25 nsec
t
D1
Delay Time Test Figures 1 and 2 — — 75 nsec
t
D2
Delay Time Test Figures 1 and 2 — — 75 nsec
Power Supply
I
S
Power Supply Current VIN = 3V (Both Inputs) — — 9 mA
VIN = 0V (Both Inputs) — — 0.5
Note: 1. Switching times guaranteed by design.
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (T
A
≤ 70°C)
Plastic DIP ...........................................................730W
SOIC ................................................................470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/°C
SOIC .............................................................. 4 mW/°C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal..
(VDD + 0.3V) to (GND – 0.3V)
Operating Temperature: C Version..............0°C to +70°C
E Version.........– 40°C to +85°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Maximum Chip Temperature.................................+150°C
Storage Temperature .............................+65°C to +150°C
Lead Temperature (Soldering ,10 sec) ................. +300°C
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1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V
DD
+ ≤ 16V unless
otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
Logic 1, Input Voltage 3 — — V
V
IL
Logic 0, Input Voltage — — 0.8 V
I
IN
Input Current 0V ≤ VIN ≤ V
DD
– 10 — 10 µA
Output
V
OH
High Output Voltage Test Figures 1 and 2 V
DD
– 0.025 — — V
V
OL
Low Output Voltage Test Figures 1 and 2 — — 0.025 V
R
O
Output Resistance VIN = 0.8V, — 15 23 Ω
I
OUT
= 10mA, VDD = 16V
VIN = 3V, — 10 18
I
OUT
= 10mA, VDD = 16V
I Latch-Up Current Withstand Reverse Current > 500 — — mA
Switching Time (Note 1)
t
R
Rise Time Test Figures 1 and 2 — — 60 nsec
t
F
Fall Time Test Figures 1 and 2 — — 40 nsec
t
D1
Delay Time Test Figures 1 and 2 — — 125 nsec
t
D2
Delay Time Test Figures 1 and 2 — — 125 nsec
Power Supply
I
S
Power Supply Current VIN = 3V (Both Inputs) — — 13 mA
VIN = 0V (Both Inputs) — — 0.7
Note: 1. Switching times guaranteed by design.
SUPPLY BYPASSING
Large currents are required to charge and discharge
capacitive loads quickly. For example, charging a 1000-pF
load to 16V in 25nsec requires an 0.8A current from the
device power supply.
To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic
MLC capacitors with short lead lengths (< 0.5-in.) should
be used. A 1.0-µF film capacitor in parallel with one or two
0.1-µF ceramic MLC capacitors normally provides adequate
bypassing.
GROUNDING
The TC1426 and TC1428 contain inverting drivers.
Individual ground returns for the input and output circuits or
a ground plane should be used. This will reduce negative
feedback that causes degradation in switching speed characteristics.
INPUT STAGE
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage
transistor drives a 2.5 mA current source load. With a logic
"1" input, the maximum quiescent supply current is 9mA.
Logic "0" input level signals reduce quiescent current to 500
µA maximum. Unused driver inputs must be connected
to VDD or GND. Minimum power dissipation occurs for logic
"0" inputs for the TC1426/27/28.
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output stage
current spiking when changing states. Input voltage thresholds are approximately 1.5V, making logic "1" input any
voltage greater than 1.5V up to VDD. Input current is less
than 1µA over this range.
The TC1426/27/28 may be directly driven by the TL494,
SG1526/27, TC38C42, TC170 and similar switch-mode
power supply integrated circuits.
4-210
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
OUTPUT
INPUT
0.1
µF MLC
V
DD
90%
10%
10%
10%
t
D1
t
R
t
D2
t
F
90%
C = 1000pF
L
1 µF
WIMA
MKS-2
= 16V
TC1427
(1/2 TC1428)
+5V
INPUT
V
DD
OUTPUT
0V
0V
90%
Test Circuit
1
2
OUTPUT
INPUT
0.1
µF MLC
V
DD
+5V
INPUT
10%
90%
10%
90%
10%
90
%
V
DD
OUTPUT
t
D1
t
F
t
R
t
D2
C = 1000pF
L
1µF
WIMA
MKS-2
= 16V
0V
0V
TC1426
(1/2 TC1428)
1
2
Test Circuit
Figure 2. Non-Inverting Driver Switching Time
Figure 1. Inverting Driver Switching Time
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TYPICAL CHARACTERISTICS
550
440
330
220
110
0
579111315
TIME (nsec)
V
DD
10,000pF
4700pF
2200pF
Rise Time vs. Supply Voltage
330
264
198
132
66
0
TIME (ns)
10,000pF
2200pF
4700pF
579111315
V
DD
Fall Time vs. Supply Voltage
C = 1000pF
L
t
D1
TIME (nsec)
5
7
9
11
13 15
V
DD
80
70
60
50
40
30
Delay Time vs. Supply Voltage
t
D2
40
32
24
16
8
0
25 45 65 85 105
125
TEMPERATURE (°C)
TIME (nsec)
RISE
t
FALL
t
C = 1000pF
L
V = +15V
DD
Rise and Fall Times vs. Temperature
C = 1000pF
L
V = +15V
DD
60
54
48
42
36
0
25 45 65 85 105 125
TEMPERATURE (°C)
TIME (nsec)
D1
t
t
D2
Delay Time vs. Temperature
30
24
18
12
6
0
100 520 940 1360 1780 2200
SUPPLY CURRENT (mA)
CAPACITIVE LOAD (pF)
500kHz
200kHz
20kHz
C = 1000pF
L
V = 15V
DD
Supply Current vs. Capacitive Load
CAPACITIVE LOAD (pF)
100
1000
10,000
1000
100
10
10 V
DD
TIME (nsec)
5 V
DD
15 V
DD
Rise Time vs. Capacitive Load
1000
100
10
100
1000
10,000
CAPACITIVE LOAD (pF)
TIME (nsec)
5V
DD
10V
DD
Fall Time vs. Capacitive Load
15V
DD
C = 1000pF
L
100
80
60
40
20
0
10
100 1000
10,000
V = 15V
DD
V = 10V
DD
V = 5V
DD
FREQUENCY (kHz)
SUPPLY CURRENT (mA)
Supply Current vs. Frequency
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
(V)
(V)
(V)
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
4-212
TELCOM SEMICONDUCTOR, INC.
TYPICAL CHARACTERISTIC (Cont.)
100mA
50mA
10mA
15
13
11
9
7
5
5
79
11
13 15
V
DD
OUT
ΩR ( )
Low-State Output Resistance
T
A
= +25°C
(V)
50
42
34
26
18
10
5
7 9 11 13 15
V
DD
100mA
50mA
10mA
High-State Output Resistance
T
A
= +25°C
(V)
R
OUT
(Ω)
200
0
400
600
800
1000
1200
1400
1600
0
10 20
30 40
50 60
70
80 90 100 110 120
AMBIENT TEMPERATURE (°C)
MAX. POWER (mV)
8 Pin DIP
Thermal Derating Curves
8 Pin CerDIP
8 Pin SOIC
10
A (sec)
-8
10
-9
10
-10
4681012141618
V
DD
(V)
Crossover Energy Loss
T
A
= +25°C
20
15
10
5
0
1
23456
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
BOTH INPUTS LOGIC “1”
Quiescent Power Supply
Current vs. Supply Voltage
0
20
15
10
5
0
SUPPLY VOLTAGE (V)
50 100 150 200 300 400
SUPPLY CURRENT (µA)
Quiescent Power Supply
Current vs. Supply Voltage
BOTH INPUTS LOGIC “0”
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
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