TelCom Semiconductor Inc TC1426CPA, TC1426COA, TC142CPA, TC1428COA, TC1427CPA Datasheet
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4-207
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
TC1426
TC1427
TC1428
GENERAL DESCRIPTION
The TC1426/27/28 are a family of 1.2A dual high- speed
drivers. CMOS fabrication is used for low power consumption and high efficiency.
These devices are fabricated using an epitaxial layer to
effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other
design and process refinements to increase their long-term
reliability.
The TC1426 is compatible with the bipolar DS0026, but
only draws 1/5 of the quiescent current. The TC1426/27/28
are also compatible with the TC426/27/28, but with 1.2A
peak output current rather than the 1.5A of the TC426/27/28
devices.
Other compatible drivers are the TC4426/27/28 and the
TC4426A/27A/28A. The TC4426/27/28 have the added
feature that the inputs can withstand negative voltage up to
5V with diode protection circuits. The TC4426A/27A/28A
have matched input to output leading edge and falling edge
delays, tD1 and tD2, for processing short duration pulses in
the 25 nanoseconds range. All of the above drivers are pin
compatible.
The high-input impedance TC1426/27/28 drivers are
CMOS/TTL input-compatible, do not require the speed-up
needed by the bipolar devices, and can be directly driven by
most PWM ICs.
This family of devices is available in inverting and noninverting versions. Specifications have been optimized to
achieve low-cost and high-performance devices, well-suited
for the high-volume manufacturer.
FEATURES
■ Low Cost
■ Latch-Up Protected: Will Withstand 500 mA Reverse
Output Current
■ ESD Protected...................................................±2 kV
■ High Peak Output Current........................ 1.2A Peak
■ High Capacitive Load Drive
Capability...................................... 1000pF in 38nsec
■ Wide Operating Range ...........................4.5V to 16V
■ Low Delay Time......................................75nsec Max
■ Logic Input Threshold Independent of
Supply Voltage
■ Output Voltage Swing to Within 25mV of
Ground or V
DD
■ Low Output Impedance ........................................ 8Ω
APPLICATIONS
■ Power MOSFET Drivers
■ Switched Mode Power Supplies
■ Pulse Transformer Drive
■ Small Motor Controls
■ Print Head Drive
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
ORDERING INFORMATION
Part No. Package Temp. Range
TC1426COA 8-Pin SOIC 0°C to +70°C
TC1426CPA 8-Pin Plastic DIP 0°C to +70°C
TC1427COA 8-Pin SOIC 0°C to +70°C
TC1427CPA 8-Pin Plastic DIP 0°C to +70°C
TC1428COA 8-Pin SOIC 0°C to +70°C
TC1428CPA 8-Pin Plastic DIP 0°C to +70°C
TC1426CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO CONNECTION
2, 4 7, 5
INVERTING
TC1427CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2, 4 7, 5
NON-INVERTING
TC1428CPA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
27
45
V
DD
V
DD
TC1426COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO CONNECTION
2, 4 7, 5
INVERTING
TC1427COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2, 4 7, 5
NON-INVERTING
TC1428COA
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
27
45
V
DD
V
DD
PIN CONFIGURATIONS
INPUT
V
+
'
2.5mA
'
500µA
NOTE: TC1428 has one inverting and one noninverting driver.
Ground any unused driver input.
INVERTING
OUTPUT
NONINVERTING
OUTPUT
(TC1426)(TC1427)
GND
TC1426 INVERTING
TC1427 NONINVERTING
TC1428 INVERTING/NONINVERTING
FUNCTIONAL BLOCK DIAGRAM
TC1426/7/8-8 10/11/96
4-208
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ELECTRICAL CHARACTERISTICS: T
A
= 25°C with 4.5V ≤ V
DD
+
≤ 16V unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
Logic 1, Input Voltage 3 — — V
V
IL
Logic 0, Input Voltage — — 0.8 V
I
IN
Input Current 0V ≤ VIN ≤ V
DD
– 1 — 1 µA
Output
V
OH
High Output Voltage Test Figures 1 and 2 V
DD
– 0.025 — — V
V
OL
Low Output Voltage Test Figures 1 and 2 — — 0.025 V
R
O
Output Resistance VIN = 0.8V, — 12 18 Ω
I
OUT
= 10 mA, VDD = 16V
VIN = 3V, — 8 12
I
OUT
= 10 mA, VDD = 16V
I
PK
Peak Output Current — 1.2 — A
I Latch-Up Current Withstand Reverse Current > 500 — — mA
Switching Time (Note 1)
t
R
Rise Time Test Figures 1 and 2 — — 35 nsec
t
F
Fall Time Test Figures 1 and 2 — — 25 nsec
t
D1
Delay Time Test Figures 1 and 2 — — 75 nsec
t
D2
Delay Time Test Figures 1 and 2 — — 75 nsec
Power Supply
I
S
Power Supply Current VIN = 3V (Both Inputs) — — 9 mA
VIN = 0V (Both Inputs) — — 0.5
Note: 1. Switching times guaranteed by design.
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (T
A
≤ 70°C)
Plastic DIP ...........................................................730W
SOIC ................................................................470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/°C
SOIC .............................................................. 4 mW/°C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal..
(VDD + 0.3V) to (GND – 0.3V)
Operating Temperature: C Version..............0°C to +70°C
E Version.........– 40°C to +85°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Maximum Chip Temperature.................................+150°C
Storage Temperature .............................+65°C to +150°C
Lead Temperature (Soldering ,10 sec) ................. +300°C
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