Datasheet TC1413NEPA, TC1413NEOA, TC1413NCPA, TC1413NCOA, TC1413EPA Datasheet (TelCom Semiconductor)

3A HIGH-SPEED MOSFET DRIVERS

FEATURES

1

TC1413

TC1413N

2

GENERAL DESCRIPTION

■ Latch-Up Protected: Will Withstand 500mA

Reverse Current

■ Input Will Withstand Negative Inputs Up to 5V

■ ESD Protected.....................................................4kV

■ High Peak Output Current .................................. 3A

■ Wide Operating Range ..........................4.5V to 16V

■ High Capacitive Load

Drive Capability ........................... 180 pF in 20nsec

■ Short Delay Time .................................. 35nsec Typ

■ Consistent Delay Times With Changes in

Supply Voltage

■ Matched Delay Times

■ Low Supply Current

— With Logic “1” Input ................................... 50µA

— With Logic “0” Input ................................. 150µA

■ Low Output Impedance .................................... 2.7Ω

■ Pinout Same as TC1410/11/12

PIN CONFIGURATIONS

V

NC

GND

1

DD

2

IN

TC1413

3
4

8

V

DD

OUT

7
6

OUT

5

GND

V

NC

GND

DD

IN

1
2

TC1413N

3
4

8

V

DD

OUT

7
6

OUT

5

GND

The TC1413/1413N are 3A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity that occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500 mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1413/1413N can easily
switch 1800pF gate capacitance in 20 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater output accuracy.

ORDERING INFORMATION

Part No. Package Temp.Range

TC1413COA 8-Pin SOIC 0°C to +70°C
TC1413CPA 8-Pin Plastic DIP 0°C to +70°C
TC1413EOA 8-Pin SOIC – 40°C to +85°C
TC1413EPA 8-Pin Plastic DIP – 40°C to +85°C

3

4

5

2 6, 7

INVERTING

NC = NO INTERNAL CONNECTION

NOTE: SOIC pinout is identical to DIP.

FUNCTIONAL BLOCK DIAGRAM

INPUT

GND

EFFECTIVE

INPUT

C = 10pF

TELCOM SEMICONDUCTOR, INC.

2 6, 7

NONINVERTING

4.7V

300mV

TC1413NCOA 8-Pin SOIC 0°C to +70°C
TC1413NCPA 8-Pin Plastic DIP 0°C to +70°C
TC1413NEOA 8-Pin SOIC – 40°C to +85°C
TC1413NEPA 8-Pin Plastic DIP – 40°C to +85°C

V

TC1413

INVERTING

OUTPUTS

NONINVERTING

OUTPUTS

TC1413N

DD

OUTPUT

TC1413/N-8 10/14/96

6

7

8

4-201

TC1413
TC1413N

3A HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, IN A or IN B ..(V

+ 0.3V) to (GND – 5.0V)

DD

Maximum Chip Temperature................................. +150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 45°C/W

θJ-C

ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V

wise specified. Typical values are measured at TA = 25°C; V

Operating Temperature Range

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

Power Dissipation (TA ≤ 70°C)

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 16V, unless other-

DD

=16V.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.0 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current – 5V ≤ VIN ≤ V

DD

TA = 25°C– 1—1µA
– 40°C ≤ TA ≤ 85°C

– 10 — 10

Output

V
V
R

I

PK

I

REV

OH
OL
O

High Output Voltage DC Test V

– 0.025 — — V

DD

Low Output Voltage DC Test — — 0.025 V
Output Resistance VDD = 16V, IO = 10 mA TA = 25°C — 2.7 4 Ω

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 3.3 5

A

— 3.3 5
Peak Output Current VDD = 16V — 3.0 — A
Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A

Withstand Reverse Current t ≤ 300 µsec

V

DD

= 16V

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 TA = 25°C — 20 28 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 22 33

A

—2433
Fall Time Figure 1 TA = 25°C — 20 28 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 22 33

A

—2433
Delay Time Figure 1 TA = 25°C — 35 45 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 40 50

A

—4050
Delay Time Figure 1 TA = 25°C — 35 45 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 40 50

A

—4050

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Power Supply Current VIN = 3V — 0.5 1.0 mA

VIN = 0V — 0.1 0.15

VDD = 16V

4-202

TELCOM SEMICONDUCTOR, INC.

3A HIGH SPEED MOSFET DRIVERS

1

TC1413

TC1413N

INPUT

VDD= 16V

4.7µF

1,8

2

6,7

TC1413

TC1413N

4,5

INPUT: 100kHz, square wave,

t

RISE

= t

FALL

≤ 10nsec

0.1µF

OUTPUT

CL = 1800pF

+5V

INPUT

0V

V

DD

OUTPUT

0V

+5V

INPUT

0V

V

DD

OUTPUT

0V

10%

10%

t

D1

90%

t

D1

t

F

10%

Inverting Driver

TC1413

90%

t

R

10%

t

D2

90%

90%

t

D2

90%

10%

t

R

10%

90%

t

F

2

3

4

1600
1400
1200

1000

800

600

400

MAX. POWER (mV)

200

0

0

8 Pin CerDIP

8 Pin SOIC

10 20

Figure 1. Switching Time Test Circuit

Thermal Derating Curves

8 Pin DIP

30 40

50 60

AMBIENT TEMPERATURE (°C)

70

80 90 100 110 120

Noninverting Driver

TC1413N

5

6

7

TELCOM SEMICONDUCTOR, INC.

8

4-203

TC1413
TC1413N

TYPICAL CHARACTERISTICS

3A HIGH-SPEED MOSFET DRIVERS

500

400

300

(µA)

200

SUPPLY

I

100

0

1.6

1.5

1.4

(VOLTS)

Quiescent Supply Current

vs. Supply Voltage

TA = 25°C

VIN = 3V

VDD (VOLTS)

Input Threshold

vs. Supply Voltage

TA = 25°C

V

IH

VIN = 0V

Quiescent Supply Current

vs. Temperature

500

VIN = 3V

V

400

300

(µA)

200

SUPPLY

I

100

VIN = 0V

16141210864

0

-40 -20 0 20 40 60 80

TEMPERATURE (°C)

SUPPLY

= 16V

Input Threshold

vs. Temperature

1.6

V

1.5

1.4

(VOLTS)

SUPPLY

V

IH

= 16V

1.3

1.2

THRESHOLD

V

1.1

9

8

7

6

(ON) W

5

ds

R

4

3

2

1

V

IL

VDD (VOLTS)

High-State Output Resistance

T

A

= 85°C

T

= 25°C

A

T

= –40°C

A

VDD (VOLTS)

1.3

V

1.2

THRESHOLD

V

16141210864

1.1

-40 -20 0 20 40 60 80

IL

TEMPERATURE (°C)

Low-State Output Resistance

9

8

7

6

5

T

(ON) W

4

ds

R

3

2
1

16141210864

A

= 85°C

T

= 25°C

A

VDD (VOLTS)

T

A

= –40°C

16141210864

4-204

TELCOM SEMICONDUCTOR, INC.

3A HIGH SPEED MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

Rise Time vs. Supply Voltage

C

= 1800pF

LOAD

70

70

TC1413N

Fall Time vs. Supply Voltage

C

= 1800pF

LOAD

1

TC1413

2

60

50

(nsec)

RISE

T

40

30

20

10

TA = 85°C

TA = 25°C

TA = –40°C

VDD (VOLTS)

TD1 Propagation Delay vs. Supply Voltage

C

= 1800pF

LOAD

110
100

90
80
70
60

(nsec)

50

D1

T

40
30
20

TA = 85°C

TA = 25°C

TA = –40°C

VDD (VOLTS)

60

50

40

(nsec)

30

FALL

T

20

16141210864

10

TA = 85°C

TA = 25°C

TA = –40°C

VDD (VOLTS)

TD2 Propagation Delay vs. Supply Voltage

C

= 1800pF

LOAD

100

90
80
70
60

(nsec)

50

D2

T

40
30

16141210864

20

TA = 85°C

TA = 25°C

TA = –40°C

VDD (VOLTS)

3

16141210864

4

5

16141210864

6

Rise and Fall Times vs. Capacitive Load

TA = 25°C, VDD = 16V

40

T

RISE

30

(nsec)

20

FALL

, T

10

RISE

T

0

0 1000 2000 3000 4000 5000

C

(pF)

LOAD

TELCOM SEMICONDUCTOR, INC.

T

FALL

Propagation Delays vs. Capacitive Load

TA = 25°C, VDD = 16V

35

34

33

32

31

30

29

28

PROPAGATION DELAYS (nsec)

0 1000 2000 3000 4000 5000

C

(pF)

LOAD

T

D2

T

D1

7

8

4-205