TelCom Semiconductor Inc TC1411NCPA, TC1411NCOA, TC1411EPA, TC1411EOA, TC1411CPA Datasheet

1A HIGH-SPEED MOSFET DRIVERS

1

TC1411

TC1411N

FEATURES

■ Latch-Up Protected: Will Withstand 500mA

Reverse Current

■ Input Will Withstand Negative Inputs Up to 5V

■ ESD Protected....................................................4 kV

■ High Peak Output Current .................................. 1A

■ Wide Operating Range ..........................4.5V to 16V

■ High Capacitive Load

Drive Capability .......................... 1000pF in 25nsec

■ Short Delay Time .................................. 30nsec Typ

■ Consistent Delay Times With Changes in

Supply Voltage

■ Matched Delay Times

■ Low Supply Current

— With Logic “1” Input ................................. 500µA

— With Logic “0” Input ................................. 150µA

■ Low Output Impedance ....................................... 8Ω

■ Pinout Same as TC1410/12/13

PIN CONFIGURATIONS

V

DD

IN

NC

GND

1
2

TC1411

3
4

2 6, 7

INVERTING

8

V

DD

OUT

7
6

OUT

5

GND

NC = NO INTERNAL CONNECTION

NOTE: SOIC pinout is identical to DIP.

FUNCTIONAL BLOCK DIAGRAM

V

NC

GND

1

DD

2

IN

3
4

TC1411N

2 6, 7

NONINVERTING

8

V

DD

OUT

7
6

OUT

5

GND

GENERAL DESCRIPTION

The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.

As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.

ORDERING INFORMATION

Part No. Package Temp. Range

TC1411COA 8-Pin SOIC 0°C to +70°C
TC1411CPA 8-Pin Plastic DIP 0°C to +70°C
TC1411EOA 8-Pin SOIC – 40°C to +85°C
TC1411EPA 8-Pin Plastic DIP – 40°C to +85°C

TC1411NCOA 8-Pin SOIC 0°C to +70°C
TC1411NCPA 8-Pin Plastic DIP 0°C to +70°C
TC1411NEOA 8-Pin SOIC – 40°C to +85°C
TC1411NEPA 8-Pin Plastic DIP – 40°C to +85°C

V

TC1411

INVERTING

OUTPUTS

DD

2

3

4

5

6

INPUT

4.7V

GND

EFFECTIVE

INPUT

C = 10pF

TELCOM SEMICONDUCTOR, INC.

300mV

NONINVERTING

OUTPUTS

TC1411N

OUTPUT

7

8

TC1411/N-10 10/11/96

4-189

TC1411
TC1411N

1A HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Operating Temperature Range

C Version............................................... 0°C to +70°C

Supply Voltage ......................................................... +20V

Input Voltage, IN A or IN B ..(V

+ 0.3V) to (GND – 5.0V)

DD

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R

................................................ 150°C/W

θJ-A

.................................................. 50°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 42°C/W

θJ-C

................................................... 155°C/W

θJ-A

..................................................... 45°C/W

θJ-C

ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V

E Version ..........................................– 40°C to +85°C

Power Dissipation (TA ≤ 70°C)

Plastic .............................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 16V, unless other-

DD

wise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.0 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current –5V ≤ VIN ≤ V

DD

TA = 25°C– 1—1µA
– 40°C ≤ TA ≤ 85°C

– 10 — 10

Output

V

OH

V

OL

R

O

I

PK

I

REV

High Output Voltage DC Test V

– 0.025 — — V

DD

Low Output Voltage DC Test — — 0.025 V
Output Resistance VDD = 16V, IO = 10mA TA = 25°C—811Ω

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 10 14

A

—1014
Peak Output Current VDD = 16V — 1.0 — A
Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A

Withstand Reverse Current t ≤ 300 µsec

VDD = 16V

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 27 40

A

—2940
Fall Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 27 40

A

—2940
Delay Time Figure 1 TA = 25°C — 30 40 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 33 45

A

—3545
Delay Time Figure 1 TA = 25°C — 30 40 nsec

0°C ≤ T
– 40°C ≤ TA ≤ 85°C

≤ 70°C — 33 45

A

—3545

Power Supply

I

S

NOTE: 1. Switching times are guaranteed by design.

Power Supply Current VIN = 3V

VIN = 0V — 0.1 0.15

V

DD

= 16V

— 0.5 1.0 mA

4-190

TELCOM SEMICONDUCTOR, INC.