Datasheet TC1411NCPA, TC1411NCOA, TC1411EPA, TC1411EOA, TC1411CPA Datasheet (TelCom Semiconductor)
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1A HIGH-SPEED MOSFET DRIVERS
1
TC1411
TC1411N
FEATURES
■ Latch-Up Protected: Will Withstand 500mA
Reverse Current
■ Input Will Withstand Negative Inputs Up to 5V
■ ESD Protected....................................................4 kV
■ High Peak Output Current .................................. 1A
■ Wide Operating Range ..........................4.5V to 16V
■ High Capacitive Load
Drive Capability .......................... 1000pF in 25nsec
■ Short Delay Time .................................. 30nsec Typ
■ Consistent Delay Times With Changes in
Supply Voltage
■ Matched Delay Times
■ Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
■ Low Output Impedance ....................................... 8Ω
■ Pinout Same as TC1410/12/13
PIN CONFIGURATIONS
V
DD
IN
NC
GND
1
2
TC1411
3
4
2 6, 7
INVERTING
8
V
DD
OUT
7
6
OUT
5
GND
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
FUNCTIONAL BLOCK DIAGRAM
V
NC
GND
1
DD
2
IN
3
4
TC1411N
2 6, 7
NONINVERTING
8
V
DD
OUT
7
6
OUT
5
GND
GENERAL DESCRIPTION
The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No. Package Temp. Range
TC1411COA 8-Pin SOIC 0°C to +70°C
TC1411CPA 8-Pin Plastic DIP 0°C to +70°C
TC1411EOA 8-Pin SOIC – 40°C to +85°C
TC1411EPA 8-Pin Plastic DIP – 40°C to +85°C
TC1411NCOA 8-Pin SOIC 0°C to +70°C
TC1411NCPA 8-Pin Plastic DIP 0°C to +70°C
TC1411NEOA 8-Pin SOIC – 40°C to +85°C
TC1411NEPA 8-Pin Plastic DIP – 40°C to +85°C
V
TC1411
INVERTING
OUTPUTS
DD
2
3
4
5
6
INPUT
4.7V
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
300mV
NONINVERTING
OUTPUTS
TC1411N
OUTPUT
7
8
TC1411/N-10 10/11/96
4-189
TC1411
TC1411N
1A HIGH-SPEED MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Version............................................... 0°C to +70°C
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(V
+ 0.3V) to (GND – 5.0V)
DD
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
................................................ 150°C/W
θJ-A
.................................................. 50°C/W
θJ-C
................................................... 125°C/W
θJ-A
..................................................... 42°C/W
θJ-C
................................................... 155°C/W
θJ-A
..................................................... 45°C/W
θJ-C
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V
E Version ..........................................– 40°C to +85°C
Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
≤ 16V, unless other-
DD
wise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage 2.0 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current –5V ≤ VIN ≤ V
DD
TA = 25°C– 1—1µA
– 40°C ≤ TA ≤ 85°C
– 10 — 10
Output
V
OH
V
OL
R
O
I
PK
I
REV
High Output Voltage DC Test V
– 0.025 — — V
DD
Low Output Voltage DC Test — — 0.025 V
Output Resistance VDD = 16V, IO = 10mA TA = 25°C—811Ω
0°C ≤ T
– 40°C ≤ TA ≤ 85°C
≤ 70°C — 10 14
A
—1014
Peak Output Current VDD = 16V — 1.0 — A
Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A
Withstand Reverse Current t ≤ 300 µsec
VDD = 16V
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ T
– 40°C ≤ TA ≤ 85°C
≤ 70°C — 27 40
A
—2940
Fall Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ T
– 40°C ≤ TA ≤ 85°C
≤ 70°C — 27 40
A
—2940
Delay Time Figure 1 TA = 25°C — 30 40 nsec
0°C ≤ T
– 40°C ≤ TA ≤ 85°C
≤ 70°C — 33 45
A
—3545
Delay Time Figure 1 TA = 25°C — 30 40 nsec
0°C ≤ T
– 40°C ≤ TA ≤ 85°C
≤ 70°C — 33 45
A
—3545
Power Supply
I
S
NOTE: 1. Switching times are guaranteed by design.
Power Supply Current VIN = 3V
VIN = 0V — 0.1 0.15
V
DD
= 16V
— 0.5 1.0 mA
4-190
TELCOM SEMICONDUCTOR, INC.
1A HIGH-SPEED MOSFET DRIVERS
1
TC1411
TC1411N
1,8
INPUT
2
TC1411
TC1411N
INPUT: 100 kHz, square wave,
t
= t
RISE
FALL
VDD= 16V
4.7µF
4,5
£ 10nsec
6,7
0.1µF
OUTPUT
CL = 1000pF
+5V
INPUT
0V
V
DD
OUTPUT
+5V
INPUT
0V
V
DD
OUTPUT
0V
0V
10%
10%
t
D1
t
F
90%
10%
Inverting Driver
TC1411
90%
t
D1
10%
Noninverting Driver
TC1411N
90%
t
D2
t
R
90%
2
3
10%
90%
4
90%
t
t
R
D2
10%
t
F
5
1600
1400
1200
1000
800
600
400
MAX. POWER (mW)
200
0
TELCOM SEMICONDUCTOR, INC.
0
8 Pin CerDIP
8 Pin SOIC
10 20
Figure 1. Switching Time Test Circuit
Thermal Derating Curves
8 Pin DIP
30 40
50 60
AMBIENT TEMPERATURE (°C)
70
80 90 100 110 120
6
7
8
4-191
TC1411
TC1411N
TYPICAL CHARACTERISTICS
Quiescent Supply Current
vs. Supply Voltage
TA = 25°C
500
400
VIN = 3V
300
(µA)
1A HIGH-SPEED MOSFET DRIVERS
Quiescent Supply Current
vs. Temperature
500
V
VIN = 3V
400
300
(µA)
SUPPLY
= 16V
200
SUPPLY
I
100
0
1.6
1.5
1.4
(VOLTS)
1.3
1.2
THRESHOLD
V
1.1
VDD (VOLTS)
Input Threshold
vs. Supply Voltage
TA = 25°C
V
IH
V
IL
VDD (VOLTS)
VIN = 0V
200
SUPPLY
I
100
VIN = 0V
16141210864
0
-40 -20 0 20 40 60 80
TEMPERATURE (°C)
Input Threshold
vs. Temperature
1.6
1.5
1.4
(VOLTS)
V
1.3
V
1.2
THRESHOLD
V
16141210864
1.1
-40 -20 0 20 40 60 80
IL
TEMPERATURE (°C)
SUPPLY
V
IH
= 16V
(ON) W
ds
R
4-192
25
20
15
10
High-State Output Resistance
25
20
T
A
= 85°C
T
= 25°C
A
T
= –40°C
A
5
0
16141210864
VDD (VOLTS)
15
10
(ON) W
ds
R
5
0
Low-State Output Resistance
T
A
= 85°C
T
= 25°C
A
T
= –40°C
A
VDD (VOLTS)
16141210864
TELCOM SEMICONDUCTOR, INC.
1A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
1
TC1411
TC1411N
Rise Time vs. Supply Voltage
C
= 1000pF
LOAD
100
80
60
(nsec)
40
RISE
T
20
0
TA = 85°C
TA = 25°C
TA = –40°C
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
C
= 1000pF
LOAD
100
80
60
40
(nsec)
D1
T
20
TA = 85°C
TA = 25°C
TA = –40°C
Fall Time vs. Supply Voltage
C
= 1000pF
LOAD
100
80
60
(nsec)
40
FALL
T
20
16141210864
0
TA = 85°C
TA=25°C
TA=–40°C
16141210864
VDD (VOLTS)
2
3
4
TD2 Propagation Delay vs. Supply Voltage
C
= 1000pF
LOAD
100
80
60
(nsec)
40
D2
T
20
TA = 85°C
TA = –40°C
TA=25°C
5
0
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
100
80
60
(nsec)
FALL
40
, T
RISE
T
20
0
0 500 1000 1500 2000 2500 3000 3500
C
(pF)
LOAD
TELCOM SEMICONDUCTOR, INC.
T
RISE
T
FALL
16141210864
0
VDD (VOLTS)
16141210864
6
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
36
T
34
32
30
28
26
PROPAGATION DELAYS (nsec)
0 500 1000 1500 2000 2500 3000 3500
C
(pF)
LOAD
D2
7
T
D1
8
4-193
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