TelCom Semiconductor Inc TC1410NEPA, TC1410NEOA, TC1410NCPA, TC1410NCOA, TC1410EPA Datasheet

4-183

TELCOM SEMICONDUCTOR, INC.

7

6

5

4

3

1

2

8

0.5A HIGH-SPEED MOSFET DRIVERS

TC1410

TC1410N

OUTPUT

INPUT

GND

EFFECTIVE

INPUT

C = 10

p

F

300mV

INVERTING

OUTPUTS

NONINVERTING

OUTPUTS

V

DD

TC1410N

4.7V

TC1410

PIN CONFIGURATIONS

ORDERING INFORMATION

Part No. Package Temp. Range

TC1410COA 8-Pin SOIC 0°C to +70°C
TC1410CPA 8-Pin Plastic DIP 0°C to +70°C
TC1410EOA 8-Pin SOIC – 40°C to +85°C
TC1410EPA 8-Pin Plastic DIP – 40°C to +85°C

TC1410NCOA 8-Pin SOIC 0°C to +70°C
TC1410NCPA 8-Pin Plastic DIP 0°C to +70°C
TC1410NEOA 8-Pin SOIC – 40°C to +85°C
TC1410NEPA 8-Pin Plastic DIP – 40°C to +85°C

FUNCTIONAL BLOCK DIAGRAM

TC1410/N-8 10/15/96

GENERAL DESCRIPTION

The TC1410/1410N are 0.5V CMOS buffer/drivers .
They will not latch up under any conditions within their power
and voltage ratings. They are not subject to damage when
up to 5V of noise spiking of either polarity occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1410/1410N can easily
switch 500pF gate capacitance in 25nsec with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.

FEATURES

■ Latch-Up Protected: Will Withstand 500mA

Reverse Current

■ Input Will Withstand Negative Inputs Up to 5V

■ ESD Protected.....................................................4kV

■ High Peak Output Current ............................... 0.5A

■ Wide Operating Range ..........................4.5V to 16V

■ High Capacitive Load

Drive Capability ............................ 500pF in 25nsec

■ Short Delay Time .................................. 35nsec Typ

■ Consistent Delay Times With Changes in

Supply Voltage

■ Matched Delay Times

■ Low Supply Current

— With Logic “1” Input ................................. 500µA

— With Logic “0” Input ................................. 150µA

■ Low Output Impedance ..................................... 16Ω

■ Pinout Same as TC1411/12/13

TC1410

1
2
3
4

V

DD

5

6

7

8

OUT

GND

V

DD

IN

NC

GND

NC = NO INTERNAL CONNECTION

2 6, 7

INVERTING

NOTE: SOIC pinout is identical to DIP.

OUT

TC1410N

1
2
3
4

V

DD

5

6

7

8

OUT

GND

V

DD

IN

NC

GND

2 6, 7

NONINVERTING

OUT

4-184

TELCOM SEMICONDUCTOR, INC.

0.5A HIGH-SPEED MOSFET DRIVERS

TC1410
TC1410N

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, IN A or IN B. (V

DD

+ 0.3V) to (GND – 5.0V)

Maximum Chip Temperature................................. +150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R

θJ-A

................................................ 150°C/W

CerDIP R

θJ-C

.................................................. 50°C/W

PDIP R

θJ-A

................................................... 125°C/W

PDIP R

θJ-C

..................................................... 42°C/W

SOIC R

θJ-A

................................................... 155°C/W

SOIC R

θJ-C

..................................................... 45°C/W

Operating Temperature Range

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

Power Dissipation (TA ≤ 70°C)

Plastic DIP ......................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ V

DD

≤ 16V, unless other-

wise specified. Typical values are measured at TA=25°C; VDD =16V.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

Logic 1 High Input Voltage 2.0 — — V

V

IL

Logic 0 Low Input Voltage — — 0.8 V

I

IN

Input Current – 5V ≤ VIN ≤ V

DD TA

= 25°C– 1—1 µA

– 40°C ≤ TA ≤ 85°C – 10 — 10

Output

V

OH

High Output Voltage DC Test V

DD

– 0.025 — — V

V

OL

Low Output Voltage DC Test — — 0.025 V

R

O

Output Resistance VDD = 16V, IO = 10mA TA=25°C — 16 22 Ω

0°C ≤ T

A

≤ 70°C — 20 28

– 40°C ≤ TA ≤ 85°C

—2028
IPKPeak Output Current VDD = 16V — 0.5 — A
I

REV

Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A
Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 1)

t

R

Rise Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T

A

≤ 70°C — 27 40

– 40°C ≤ TA ≤ 85°C

—2940
t

F

Fall Time Figure 1 TA = 25°C — 25 35 nsec

0°C ≤ T

A

≤ 70°C — 27 40

– 40°C ≤ TA ≤ 85°C

—2940
tD1Delay Time Figure 1 TA = 25°C — 30 40 nsec

0°C ≤ T

A

≤ 70°C — 33 45

– 40°C ≤ TA ≤ 85°C

—3545
t

D2

Delay Time Figure 1 TA = 25°C — 30 40 nsec

0°C ≤ T

A

≤ 70°C — 33 45

– 40°C ≤ TA ≤ 85°C

—3545

Power Supply

I

S

Power Supply Current VIN = 3V

V

DD

= 16V

— 0.5 1.0 mA

VIN = 0V — 0.1 0.15

NOTE: 1. Switching times are guaranteed by design.

VDD = 16V