TelCom Semiconductor Inc LM385BCZB-2.5, LM385BCZB-1.2, LM385BCOA-2.5, LM385BCOA-1.2, LM385CZB-2.5 Datasheet

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TELCOM SEMICONDUCTOR, INC.
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LOW POWER, BANDGAP VOL T AGE REFERENCES
LM285/285B-1.2V LM285/285B-2.5V LM385/385B-1.2V LM385/385B-2.5V
Temperature
LM285BEOA-1.2 8-Pin SOIC – 40°C to +85°C 1.2 1% LM285BEOA-2.5 8-Pin SOIC – 40°C to +85°C 2.5 1.5% LM285BEZB-1.2 TO-92-3 – 40°C to +85°C 1.2 1% LM285BEZB-2.5 TO-92-3 – 40°C to +85°C 2.5 1.5% LM285EOA-1.2 8-Pin SOIC – 40°C to +85°C 1.2 2% LM285EOA-2.5 8-Pin SOIC – 40°C to +85°C 2.5 3% LM285EZB-1.2 TO-92-3 – 40°C to +85°C 1.2 2% LM285EZB-2.5 TO-92-3 – 40°C to +85°C 2.5 3% LM385BCOA-1.2 8-Pin SOIC 0°C to +70°C 1.2 1% LM385BCOA-2.5 8-Pin SOIC 0°C to +70°C 2.5 1.5% LM385BCZB-1.2 TO-92-3 0°C to +70°C 1.2 1% LM385BCZB-2.5 TO-92-3 0°C to +70°C 2.5 1.5% LM385COA-1.2 8-Pin SOIC 0°C to +70°C 1.2 2% LM385COA-2.5 8-Pin SOIC 0°C to +70°C 2.5 3% LM385CZB-1.2 TO-92-3 0°C to +70°C 1.2 2% LM385CZB-2.5 TO-92-3 0°C to +70°C 2.5 3%
PIN CONFIGURATIONS
GENERAL DESCRIPTION
The LM285/385-1.2V (1.235V output) and LM285/385-
2.5V (2.5V output) are bipolar, two-terminal, bandgap volt­age references that offer precision performance without premium price. These devices do not require thin-film re­sistors, greatly lowering manufacturing complexity and cost.
A 30ppm/°C output temperature coefficient and a 15µA to 20mA operating current range make these voltage refer­ences especially attractive for multimeter, data acquisition and telecommunications applications.
FEATURES
Output Tolerance....................................... 1% or 2%
Output Voltage Option
LM285/385-1.2V ........................................1.235V
LM285/385-2.5V ............................................2.5V
Wide Operating Current Range
LM285/385-1.2V ........................... 15µA to 20mA
LM285/385-2.5V ........................... 20µA to 20mA
Temperature Coefficient .......................... 30ppm/°C
Dynamic Impedance.......................................... 0.6
TO-92-3 Plastic Package
8-Pin Plastic Narrow Body (SOIC) Package
APPLICATIONS
ADC and DAC Reference
Current Source Generation
Threshold Detectors
Power Supplies
Multi-meters
NC = NO INTERNAL CONNECTION
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CATHODE
NC
NC NC
NC
NC NC
ANODE
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TO-92-3 PLASTIC
(BOTTOM VIEW)
SURFACE MOUNT
8-PIN PLASTIC SOIC
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LM285/285B EZB-1.2 LM285/285B EZB-2.5 LM385/385B CZB-1.2 LM385/385B CZB-2.5
LM285/285B E0A-1.2 LM285/285B EOA-2.5 LM385/385B COA-1.2 LM385/385B COA-2.5
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LM285/B/385/B-9 11/6/96
ORDERING INFORMATION
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TELCOM SEMICONDUCTOR, INC.
LOW POWER, BANDGAP
VOL T AGE REFERENCES
LM285/285B-1.2V LM285/285B-2.5V LM385/385B-1.2V LM385/385B-2.5V
ABSOLUTE MAXIMUM RATINGS*
Forward Current .................................................... +10mA
Reverse Current.................................................... +30mA
Storage Temperature Range ................– 65°C to +150°C
Operating Temperature Range
TO-92 Package ................................– 40°C to +85°C
Surface Mount Package ...................– 40°C to +85°C
Lead Temperature (Soldering, 10 sec)
TO-92 Package ..............................................+300°C
Surface Mount Package .................................+300°C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not implied.
ELECTRICAL CHARACTERISTICS: T
A
= +25°C, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Min Typ Max Unit
V
(BR)R
Reverse Breakdown Voltage IR 20mA V LM285B-1.2/LM385B-1.2 1.223 1.235 1.247 1.223 1.235 1.247 TA = T
low
to T
high
(Note 1) 1.200 1.270 1.210 1.260 LM285-1.2V/LM385-1.2V 1.205 1.235 1.260 1.205 1.235 1.260 TA = T
low
to T
high
(Note 1) 1.192 1.273 1.192 1.273
I
RMIN
Minimum Operating Current µA T
A
= +25°C 8.0 15 8.0 15
TA = T
low
to T
high
(Note 1) 20 20
V
(BR)R
Reverse Breakdown Voltage mV Change with Current I
Rmin
= IR = 1.0mA, TA = +25°C 1.0 1.0
T
A
= T
low
to T
high
(Note 1) 1.5 1.5
1.0mA = I
R
= 20mA, TA = +25°C — —10 — —20
T
A
= T
low
to T
high
(Note 1) 20 25
Z Reverse Dynamic Impedance IR = 100µA 0.6 0.6 V
(BR)
/T Average Temperature Coefficient 10µA IR 20mA 30 100 30 100 ppm/°C
S Long Term Stability IR = 100µA, 20 20 ppm/kHR
TA = +25°C ±0.1°C
Symbol Parameter Test Conditions Min Typ Max Min Typ Max Unit
V
(BR)R
Reverse Breakdown Voltage IR = 20mA V LM285B-2.5/LM385B-2.5 2.462 2.5 2.538 2.462 2.5 2.538 TA = T
low
to T
high
(Note 1) 2.415 2.585 2.436 2.564 LM285-2.5V/LM385-2.5V 2.425 2.5 2.575 2.425 2.5 2.575 TA = T
low
to T
high
(Note 1) 2.400 2.600 2.400 2.600
I
RMIN
Minimum Operating Current µA T
A
= +25°C 13 20 13 20
TA = T
low
to T
high
(Note 1) 30 30
V
(BR)R
Reverse Breakdown Voltage mV Change with Current I
Rmin
= IR = 1.0mA, TA = +25°C 1.0 2.0
T
A
= T
low
to T
high
(Note 1) 1.5 2.5
1.0mA = I
R
= 20mA, TA = +25°C — —10 — —20
T
A
= T
low
to T
high
(Note 1) 20 25
Z Reverse Dynamic Impedance IR = 100µA 0.6 0.6 V
(BR)
/T Average Temperature Coefficient 20µA IR 20mA 30 100 30 100 ppm/°C
S Long Term Stability IR = 100µA, 20 20 ppm/kHR
TA = +25°C ±0.1°C
Note: 1. T
low
= – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5 T
high
= +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
LM285 / LM285B–1.2 LM385 / LM385B–1.2
LM285 / LM285B–2.5 LM385 / LM385B–2.5
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