TelCom TC4421, TC4422 Technical data

9A HIGH-SPEED MOSFET DRIVERS

FEATURES

■ Tough CMOS™ Construction

■ High Peak Output Current .................................. 9A

■ High Continuous Output Current ............... 2A Max

■ Fast Rise and Fall Times:

— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load

■ Short Internal Delays............................ 30nsec Typ

■ Low Output Impedance ............................ 1.4W Typ

APPLICATIONS

■ Line Drivers for Extra-Heavily-Loaded Lines

■ Pulse Generators

■ Driving the Largest MOSFETs and IGBTs

■ Local Power ON/OFF Switch

■ Motor and Solenoid Driver

PIN CONFIGURATIONS

TC4421
TC4422

GENERAL DESCRIPTION

The TC4421/4422 are high current buffer/drivers

capable of driving large MOSFETs and IGBTs.

They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they can­not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi­tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.

The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.

1

2

3

4

5-Pin TO-220 8-Pin Plastic DIP/CerDIP

V

1

DD

2

INPUT

TC4421

3

TC4421
TC4422

Tab is
Common
to V

DD

DD

V

GND

GND

INPUT

FUNCTIONAL BLOCK DIAGRAM

TELCOM SEMICONDUCTOR, INC.

NOTE:

OUTPUT

NC

GND

Duplicate pins must both be connected
for proper operation.
NC = No connection

INPUT

GND

TC4422

4

both

4.7V

EFFECTIVE

INPUT C

25 pF

8
7
6
5

V

DD

OUTPUT
OUTPUT
GND

INVERTING

300 mV

NONINVERTING

TC4421/TC4422

Inverting/Noninverting

ORDERING INFORMATION

Part No. Package Temperature Range

TC4421CAT 5-Pin TO-220 0°C to +70°C
TC4421CPA 8-Pin PDIP 0°C to +70°C
TC4421EPA 8-Pin PDIP – 40°C to +85°C
TC4421MJA 8-Pin CerDIP – 55°C to+125°C

TC4422CAT 5-Pin TO-220 0°C to +70°C
TC4422CPA 8-Pin PDIP 0°C to +70°C
TC4422EPA 8-Pin PDIP – 40°C to +85°C
TC4422MJA 8-Pin CerDIP – 55°C to+125°C

V

DD

OUTPUT

TC4421/2-7 -1018/96

4-231

5

6

7

8

TC4421
TC4422

9A HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Power Dissipation, TA ≤ 70°C

PDIP ..................................................................730W

CerDIP............................................................800mW

5-Pin TO-220 ......................................................1.6W

Power Dissipation, TA ≤ 70°C

5-Pin TO-220 (With Heat Sink).........................1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/°C

CerDIP....................................................... 6.4mW/°C

5-Pin TO-220 .............................................. 12mW/°C

Thermal Impedance (To Case)

5-Pin TO-220 R

Storage Temperature ............................– 65°C to +150°C

Operating Temperature (Chip) ................................ 150°C

ELECTRICAL CHARACTERISTICS: T

.....................................................10°C/W

QJ-C

= 25°C with 4.5V ≤ V

A

Operating Temperature (Ambient)

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Lead Temperature (10 sec).....................................300°C

Supply Voltage ............................................................20V

Input Voltage .......................... (V

+ 0.3V) to (GND - 5V)

DD

Input Current (VIN > VDD) ........................................50 mA

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 18V unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 Input Voltage 2.4 1.8 — V
Logic 0 Input Voltage — 1.3 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

DC

I

REV

OH
OL
O
O

High Output Voltage See Figure 1 V
Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω
Output Resistance, Low VDD = 18V, IO = 10 mA — 0.9 1.7 Ω
Peak Output Current VDD = 18V — 9 — A
Continuous Output Current 10V ≤ V

Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 10,000 pF — 60 75 nsec
Fall Time Figure 1, CL = 10,000 pF — 60 75 nsec
Delay Time Figure 1 — 30 60 nsec
Delay Time Figure 1 — 33 60 nsec

Power Supply

I

S

V

DD

Power Supply Current VIN = 3V — 0.2 1.5 mA

Operating Input Voltage 4.5 — 18 V

Input

V

IH

V

IL

I

IN

Logic 1 Input Voltage 2.4 — — V
Logic 0 Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

– 0.025 — — V

DD

≤ 18V, TC = 25° 2A

DD

(TC4421/22 CAT only)

Withstand Reverse Current t ≤ 300 µsec

VIN = 0V — 55 150 µA

DD

– 10 — 10 µA

4-232

TELCOM SEMICONDUCTOR, INC.

9A HIGH-SPEED MOSFET DRIVERS

1

TC4421
TC4422

ELECTRICAL CHARACTERISTICS (cont.):

Measured over operating temperature range with 4.5V ≤ V

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Power Supply

I

S

V

DD

NOTE: 1. Switching times guaranteed by design.

Logic 1 Input Voltage 2.4 — — V
Logic 0 Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

High Output Voltage See Figure 1 V
Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High VDD = 18V, IO = 10 mA — 2.4 3.6 W
Output Resistance, Low VDD = 18V, IO = 10 mA — 1.8 2.7 W

Rise Time Figure 1, CL = 10,000 pF — 60 120 nsec
Fall Time Figure 1, CL = 10,000 pF — 60 120 nsec
Delay Time Figure 1 — 50 80 nsec
Delay Time Figure 1 — 65 80 nsec

Power Supply Current VIN = 3V — 0.45 3 mA

VIN = 0V — 0.06 0.2

Operating Input Voltage 4.5 — 18 V

≤ 18V unless otherwise specified.

S

DD

– 10 — 10 µA

– 0.025 — — V

DD

2

3

4

5

V = 18V

DD

18

0.1 µF 0.1 µF

INPUT

TELCOM SEMICONDUCTOR, INC.

26

7

TC4421

54

0.1 µF

+5V

INPUT

0V

OUTPUT

C = 10,000 pF

L

Figure 1. Switching Time Test Circuit

+18V

OUTPUT

0V

10%

t

t

D1

F

90%

10%

INPUT: 100 kHz, square wave,
t

RISE = tFALL

≤ 10nsec

t

90%

D2

10%

t

6

R

90%

7

8

4-233