TEL TR2.5-700-14, TR2.5-600-14, TR2.5-400-14, TR2.5-800-14 Datasheet
TR2.5 SERIES
SILICON TRIACS
l
Sensitive Gate Triacs
l
2.5 A RMS
l
Glass Passivated Wafer
l
400 V to 800 V Off-State Voltage
l Max I
GT
of 5 mA (Quadrant 1)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted
)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 100 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TR2.5-400-14
TR2.5-600-14
TR2.5-700-14
TR2.5-800-14
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I
T(RMS)
2.
5 A
Peak on-state surge current full-sine-wave (see Note 3) I
TSM
12
A
Peak on-state surge current half-sine-wave (see Note 4) I
TSM
14 A
Peak gate current I
GM
±0.2 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
£ 200 m s) P
GM
1.3 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) P
G(AV)
0.3 W
Operating case temperature range T
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T
L
230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS
MIN TYP MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
IG = 0 TC = 110°C ±1 mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10 W
RL = 10 W
RL = 10 W
RL = 10 W
t
p(g)
> 20 m s
t
p(g)
> 20 m s
t
p(g)
> 20 m s
t
p(g)
> 20 m s
5
-8
-10
25
mA
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10 W
RL = 10 W
RL = 10 W
RL = 10 W
t
p(g)
> 20 m s
t
p(g)
> 20 m s
t
p(g)
> 20 m s
t
p(g)
> 20 m s
0.9
-1.2
-1.2
1.2
2.5
-2.5
-2.5
V
† All voltages are with respect to Main Terminal 1.
TR2.5 SERIE
S
SILICON TRIACS
† All voltages are with respect to Main T
erminal 1
.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
= £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100 W , t
p(g)
= 20 m s, tr = £ 15 ns, f = 1 kHz.
V
TM
Peak on-state voltage ITM = ±3.5 A IG = 50 mA (see Note 6) ±1.9 V
I
H
Holding current
V
supply
= +12 V†
V
supply
= -12 V†
I
G
= 0
I
G
= 0
Init’ I
TM
= 100 mA
Init’ I
TM
= - 100 mA
30
-30
mA
I
L
Latching current
V
supply
= +12 V†
V
supply
= -12 V†
(see Note 7)
40
-40
mA
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRMIG
= 0 TC = 110°C ±50 V/µs
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRMITRM
= ±3.5 A TC = 85°C ±2 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
q JC
Junction to case thermal resistance 10 °C/W
R
q JA
Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS
MIN TYP MAX
UNIT
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