TEL B170, B180B, B180, B170B, B190B Datasheet
...
TRANSYS
ELECTRONICS
L I M I T E D
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Ideally Suited for Automatic Assembly
·
Low Power Loss, High Efficiency
·
Surge Overload Rating to 30A Peak
·
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
·
260°C/10 Second at Terminal
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: SMA / SMB, Molded Plastic
·
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: Cathode Band or Cathode Notch
· SMA Weight: 0.064 grams (approx.)
· SMB Weight: 0.093 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B170/B - B1100/B
B
Dim Min Max Min Max
A
A
J
H
G
E
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
C
B
C
D
D
E
G
H
J
SMA SMB
2.29 2.92 3.30 3.94
4.00 4.60 4.06 4.57
1.27 1.63 1.96 2.21
0.15 0.31 0.15 0.31
4.80 5.59 5.00 5.59
0.10 0.20 0.10 0.20
0.76 1.52 0.76 1.52
2.01 2.62 2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol B170/B B180/B B190/B B1100/B Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TT= 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF= 1.0A @ TA= 25°C
@ T
= 100°C
A
Peak Reverse Current @ TA= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
= 100°C
A
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
C
qJT
j
@ TA= 25°C unless otherwise specified
70 80 90 100 V
49 56 63 70 V
1.0 A
30 A
0.79
0.69
0.5
5.0
80 pF
25 K/W
-65 to +150 °C
mA
V
Birmingham, England. Tel 44 (0) 121 776 6321 Fax 44 (0) 121 776 6997
Transys Electronics Limited
Email info@transyselectronics.com Website www.transyselectronics.com
10
g
0
g
1000
g
O
WARD CURRENT (A)
R
(AV),
I AVERAGE F
1.0
0.5
0
25 50 75 100 125 150
F
I , INSTANTANEOUS FORWARD CURRENT (A)
1.0
0.1
T - 25 Cj°
I Pulse Width = 300 s
0.01
F
0 0.2 0.4 0.6 0.8 1.0
µ
T , TERMINAL TEMPERATURE ( C)
T
Fig. 1 Forward Current Derating Curve
4
Single Half Sine-Wave
(JEDEC Method)
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
T = 25°C
j
f = 1.0MHz
30
j
C , JUNCTION CAPACITANCE (pF)
100
10
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
20
10
T = 150 Cj°
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
. 3 Max Non-Repetitive Peak Fwd Surge Current
Fi
Transys Electronics Limited
Birmingham, England. Tel 44 (0) 121 776 6321 Fax 44 (0) 121 776 6997
Email info@transyselectronics.com Website www.transyselectronics.com
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