TEL 3EZ91, 3EZ82, 3EZ68, 3EZ68, 3EZ62 Datasheet

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3EZ11 THRU 3EZ200

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts

FEATURES

l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Excellent clamping capability l Typical ID less than 1A above 11V l High temperature soldering :

260/10 seconds at terminals l Plastic package has Underwriters Laboratory Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-15, Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes positive end (cathode)

DO-15

Standard Packaging: 52mm tape Weight: 0.015 ounce, 0.04 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25ambient temperature unless otherwise specified.

Peak Pulse Power Dissipation (Note A) Derate above 75 Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note B) Operating Junction and Storage Temperature Range TJ,T

NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

SYMBOL VALUE UNITS

PD 3

15 Amps

FSM

-55 to +150

STG

Watts

mW/



3EZ11 THRU 3EZ200

ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) VF=1.2 V max , IF=500 mA for all types

Type No. (Note 1.)

3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ17 3EZ18 3EZ19 3EZ20 3EZ22 3EZ24 3EZ27 3EZ28 3EZ30 3EZ33 3EZ36 3EZ39 3EZ43 3EZ47 3EZ51 3EZ56 3EZ62 3EZ68 3EZ75 3EZ82

3EZ91 3EZ100 3EZ110 3EZ120 3EZ130 3EZ140 3EZ150 3EZ160 3EZ170 3EZ180 3EZ190 3EZ200

Nominal Zener

Voltage Vz @ I

volts

(Note 2.)

11 12 13 14 15 16 17 18 19 20 22 24 27 28 30 33 36 39 43 47 51 56 62 68 75 82

91 100 110 120 130 140 150 160 170 180 190 200

Test

current

IZT

68 63 58 53 50 47 44 42 40 37 34 31 28 27 25 23 21 19 17 16 15 13 12 11 10

9.1

8.2

7.5

6.8

6.3

5.8

5.3 5

4.7

4.4

4.2 4

3.7

Maximum Zener Impedance (Note 3.)

ZZT @ IZT

Ohms

4.5

4.5 5

5.5

5.5 6 6 7 7 8 9

10 12 16 20 22 28 33 38 45 50 55 70 85

95 115 160 225 300 375 475 550 625 650 700 800 875

ZZk @ IZK

Ohms

700 700 700 700 700 700 750 750 750 750 750 750 750

750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 5000 6000 6500 7000 7000 8000 8000

IZK

0.25

Leakage Current

A Max

1 1

0.5

NOTES:

Volts

8.4

9.1

9.9

10.6

11.4

12.2 13

13.7

14.4

15.2

16.7

18.2

20.6 21

22.5

25.1

27.4

29.7

32.7

35.6

38.8

42.6

47.1

51.7 56

62.2

69.2 76

83.6

91.2

98.8

106.4 114

121.6

130.4

136.8

144.8 152

Maximum Zener

Current

Madc

225 246 208 193 180 169 150 159 142 135 123 112 100

96 90 82 75 69 63 57 53 48 44 40 36 33 30 27 25 22 21 19 18 17 16 15 14 13

Surge Current

@ TA = 25

ir - mA

(Note 4.)

1.82

1.66

1.54

1.43

1.33

1.25

1.18

1.11

1.05 1

0.91

0.83

0.74

0.71

0.67

0.61

0.56

0.51

0.45

0.42

0.39

0.36

0.32

0.29

0.27

0.24

0.22

0.2

0.18

0.16

0.15

0.14

0.13

0.12

0.11

0.1

1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.

2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms±10ms from the diode body, and an ambient temperature of 25 (8, -2).

3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.

4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual device capability is as described in Figure 3.

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