Tektronix 80E09, 80E10, 80E08, 80E06X2, 80E01 DATASHEET

Electrical Sampling Modules

80E10 • 80E09 • 80E08 • 80E07 • 80E06 • 80E06X2 • 80E04 • 80E03 •
80E03-NV • 80E01 Data Sheet

Applications

Features

All Modul

Up to 70 GHz Bandwidth and 5 ps Measured Rise Time (10 - 90%)

Lowest N

Remote Samplers*1enable Location of Sampler Near DUT and ensure
Best Signal Fidelity

Independent Sampler Deskew ensures Easy Fixture and Probe
De-embedding

Dual Channel (Except 80E01 and 80E06)

Precision Microwave Connectors (3.5 mm, 2.92 mm, 2.4 mm, and

1.85 mm)

Probe Su

& Benefits

es

oise for Analysis – 450 μV

pport (Except 80E06)

at 60 GHz, 300 μV

RMS

at 30 GHz

RMS

Impedance Ch
Data Applications

Advanced Jit

Channel and Eye-diagram Simulation and Measurement-ba s ed Spice
Modeling

80E10, 80E08, and 80E04

High-performance TDR/T Measurements

Impedance Profile, Inductance, Capacitance, and S-parameters

Transmission Line Quality, Impedance, and Crosstalk

True Diffe

Efficient Fault Isolation

80E09, 80E07, 80E06, 80E01

High-frequency, Low-no ise Signal Acquisition

Fast Rise Time Measurements

Jitter An

80E03, 80E03-NV

Device Characterization, Transmission Quality, Waveform Paramete rs

Low Signal Measurements

*1Integrated on 80E07 - 80E10 and optional on 80E01 - 80E04 and 80E06.

aracterization and S-parameter Measurements for Serial

ter, Noise, and BER Analysis

rential, Common Mode, and Single-ended Measurements

alysis and Waveform Analysis

TDR Mod

ules

15 ps Reflected True Differential Fully Integrated TDR Rise Time (12 ps
Incident) and feature Resolution Below 1 mm

Efficient, Accurate, Easy to Use, and Cost-effective S-parameters up to
50 GHz

Data Sheet

TDR Modules: 80E10, 80E08, and 80E04

The 80E10, 80E08, and 80E04 are dual-channel Time Domain
Reflectometry (TDR) sampling modules, providing up to 12 ps incident
and 15 ps reflected rise time in the 80E10 (18 ps incident in 80E08 and
23 ps incident in 80E04). Each channel of these modules is capable of
generating a fast step for use in TDR mode and the acquisition portion of
the sampling module monitors the incident step and any reflected energy.
The polarity of each channel’s step can be selected independently. This
allows for differential or common mode TDR or S-parameter testing of
two coupled lines, in addition to the independent testing of isolated lines.
The independent step generation for each channel allows true differential
measurements, which ensures measurement accuracy for differential
devices.

The 80E10 and 80E08 are small form factor, fully integrated independent
2-meter remote sampler systems, enabling location of the sampler near the
DUT and ensuring the best signal fidelity. An optional 2-meter extender
is available for the 80E04. The modules characterize crosstalk by using
TDR steps to drive one line (or line pair for differential crosstalk) while
monitoring a second line (or line pair) with the other channel (or another
module for differential crosstalk). The "filter" function on the 8200 and 8000
Series mainframes can be used with TDR or crosstalk measurements to
characterize expected system performance with slower edge rates.

All modules

have independent incident step and receiver deskew to remove
the effect of measurement fixtures and probes, enabling faster and easier
de-embedding of test fixtures. The 80E10 sampling modules provide an
acquisition rise time of 7 ps, with up to 50 GHz user-selectable equivalent
bandwidth (with 50, 40, and 30 GHz settings). The 80E08 sampling
bandwidth is 30 GHz (user selectable with 30 and 20 GHz settings) and
80E04 sampl

ing bandwidth is 20 GHz. The 20 GHz P8018 single-ended
and 18 GHz P80318 differential variable pitch TDR probes provide excellent
performance and compliance, ensuring easy and accurate backplane and
package measurements.

When the user employs these modules with Tektronix IConnect

®

TDR and
VNA software, he or she can acquire up to 1,000,000 data points and obtain
up to 50 GHz diff

erential, mixed mode, and single-ended S-parameters.
IConnect also enables impedance, S-parameters, and eye-diagram
compliance testing as required by various serial data standards, as well as
full channel analysis, Touchstone (SnP) file output, and SPICE modeling for
gigabit interconnects.

Sampling Modules: 80E09, 80E07, 80E06, 80E03,
80E03-NV, and

80E01

The 80E09 and 80E07 a re dual-channel modules with remote samplers,

0 μV

capable of 45

noise at 60 GHz sampling bandwidth, and 300 μV

RMS

at 30 GHz sampling bandwidth. Each small form factor remote sampler
is attached to a 2 -meter cable in order to minimize the effects of cables,
probes, and fixtures, allow close location of the sampler to the DUT, and
ensure best signal fidelity. User-selectable bandwidth settings (60/40/30 on
80E09 and 30/20 on 80E07) offer optimal noise/bandwidth trade-off.

The 80E06 and 80E01 are single-channel, 70+ and 50 GHz bandwidth
sampling modules. The 80E06 provides the widest measurement bandwidth
and fastest r

ise time measurements with world-class signal fidelity. Both the
80E06 and 80E01 provide a superior maximum operating rang e of ±1.6 V.
Both of these m odules can be used with the optional 2-meter extender
cable, which ensures superior signal fidelity and measurement flexibility.

The 80E03 and 80E03-NV are dual-channel, 20 GHz sampling modules.
These sampling modules provide an acquisition rise time of 17.5 ps or less.
An optional 2-meter extender cable is available.

When used with Tektronix 80SJNB Jitter, Noise, and BER software, these
modules enable separation of both jitter and noise into their components,
understanding precise causes of eye closure, and obtaining highly accurate
extrapolat

ion of BER and 3-D eye contour. When used with the 82A04
phase reference module, time-base accuracy can be improved down to
200 fs

jitter, which together with the 300 μVnoisefloor and 14 bits of

RMS

resolution ensures the highest signal fidelity for the measured signals.

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Electrical Sampling Modules — 80E10 • 80E09 • 80E08 • 80E07 • 80E06 • 80E06X2 • 80E04 • 80E03 • 80E03-NV • 80E01

Characteristics

Characteristic

80E10

Application Type

True differential TDR,

Channels

2

Input Impedance

50 ±1.0 Ω 1.85 mm female, precision

S-parameters, and fault

included with 50 Ω SMA

80E09

isolation

High-frequency, low-noise

2

50 ±1.0 Ω 1.85 mm female, precision

signal acquisition and jitter

included with 50 Ω SMA

80E08

characterization

True differential TDR and

2

50 ±1.0 Ω 2.92 mm female 30/20 GHz*

S-parameters

80E07

Optimal noise/performance

2

50 ±1.0 Ω 2.92 mm female 30/20 GHz*

trade-off for jitter

characterization

80E06 High-speed electrical

1

50 ±0.5 Ω 1.85 mm female, precision

device characterization

included with 50 Ω SMA

80E04 TDR impedance and

2

50 ±0.

5 Ω

crosstalk characterization

80E03

Device characterization 2

50 ±0.5 Ω 3.5 mm female 20 GHz*

80E03-NV
80E01

High-frequency, high

1

50 ±0.5 Ω 2.4 mm female, precision

maximum operating range

signal acquisition

*2Values shown are warranted unless printed in an italic typeface which represents an unwarranted characteristic value that the instrument will typically perform to.

3

Calculated from 0.35 bandwidth rise time product.

*

4

User selectable.

*

5

*

The 80E03 bandwidth is calculated from 0.35 bandwidth rise time product. The 80E03-NV bandwidth is directly verified.

included with 50 Ω SMA

Channel Input

Connector

adapter to 2.92 mm

termination

adapter to 2.92 mm

termination

adapter to 2.92 mm

termination

female

3.5 mm

adapter to 2.92 mm

termination

Bandwidth*

50/40/30 GHz*

60/40/30 GHz*

70+ GHz

*

20 GHz

50 GHz

2

3, 4

3, 4

3, 4

3, 4

3

5

Module Rise Time

E10

80

0E09

8

0E08

8

0E07

8

0E06

8

0E04

8
80E03

(10% to 90%)

3

7ps*

5.8 ps*

3

11. 7*

3

11. 7*

5.0 ps*

17.5 ps

≤
≤17.5 ps

80E03-NV
80E01

*3Calculated from 0.35 bandwidth rise time product.

7ps*

3

Dynamic Range

0V

1.

3

3

.0 V

1

.0 V

1

.0 V

1

.0 V

1

.0 V

1

.0 V

1

1.0 V

p-p

p-p

p-p

p-p

p-p

p-p

p-p

p-p

set Range

Off

.1 V

±1

1.1 V

±

1.1 V

±

1.1 V

±

1.6 V

±

1.6 V

±

1.6 V

±

±1.6 V ±1.6 V 2.0 V

Maximum

Operating Voltage

.1 V

±1

1.1 V

±

1.1 V

±

1.1 V

±

1.6 V

±

1.6 V

±

1.6 V

±

Maximum

Nondestruct

Vol tag e, DC + AC

0V

2.
.0 V

2

.0 V

2

.0 V

2

.0 V

2

.0 V

3

.0 V

3

Ver

p-p

tical Number of

gitized Bits

Di

14 bits full scale
14 bits full scale
14 bits full scale
14 bits full scale
14 bits full scale
14 bits full scale
14 bits full scale

14 bits full scale

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