Model 4200-SCS Semiconductor
Characterization System
Applications Manual
4200-904-01 Rev. E / June 2008
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Model 4200-SCS
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Document Number: 4200-904-01 Rev. E / June 2008
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03/07
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!
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Table of Contents
1Graphical Data Analysis and Basic Test Sequencing
Figure 4-19Default definition and typical graph for Vds-id ....
Figure 4-20Default Definition tab and G
Figure 4-21Default definition and typical graph for vds-id-pulse-vs-dc.............................................. 4-28
Figure 4-22Default definition and typical graph for vgs-id
Figure 4-23Default definition and typical graph for vgs-id-puls
Figure 4-24Default GUI definition and typical graph f
Figure 4-25Typical graphical result for scope-shot .....
Figure 4-26Highlighting all entries in vds-id data sheet ..................................................................... 4-34
Figure 4-27Data from vds-id pasted int
Figure 4-28Graph Definition dialog box and resulting graph that shows the three added curves..... 4-35
Figure 4-29Trapping and de-trapping in a single gate volt
Figure 4-30Slow single pulse—hardware setup block diagram ..................................................... 4-55
Figure 4-31Slow single pulse—hardware connection ...................................................................... 4-56
Figure 4-32Example slow single pulse waveform graph .................................................................. 4-56
Figure 4-33Single slow pulse example data plot ............................................................................... 4-57
Figure 4-48Typical graph for Vg-Id-Pulse-vs-DC............................................................................... 4-75
Figure 4-49Typical graphical result for ScopeShot -FET................................................................... 4-76
Figure 4-50Pulse adapters, cables and hardware........................................................................... 4-118
Figure 4-51Cross section of a floating gate transistor in both the erased and programmed states 4-119
Figure 4-52Graph of shifted voltage threshold, VT, due to stored charge on
floating gate on a 1 bit (2 level) cell. 4-
Figure 4-53Fowler-Nordheim tunneling Program and Erase.
Figure 4-19Default definition and typical graph for Vds-id ....
Figure 4-20Default Definition tab and G
Figure 4-21Default definition and typical graph for vds-id-pulse-vs-dc.............................................. 4-28
Figure 4-22Default definition and typical graph for vgs-id
Figure 4-23Default definition and typical graph for vgs-id-puls
Figure 4-24Default GUI definition and typical graph f
Figure 4-25Typical graphical result for scope-shot .....
Figure 4-26Highlighting all entries in vds-id data sheet ..................................................................... 4-34
Figure 4-27Data from vds-id pasted int
Figure 4-28Graph Definition dialog box and resulting graph that shows the three added curves..... 4-35
Figure 4-29Trapping and de-trapping in a single gate volt
Figure 4-30Slow single pulse—hardware setup block diagram ..................................................... 4-55
Figure 4-31Slow single pulse—hardware connection ...................................................................... 4-56
Figure 4-32Example slow single pulse waveform graph .................................................................. 4-56
Figure 4-33Single slow pulse example data plot ............................................................................... 4-57
Open “default” project and “vds-id” test, page 1-5
Display and analyze the “vds-id” graph, page 1-6
Sequencing tests on a single device, page 1-9
Open “default” project, page 1-9
Open “4terminal-n-fet” tests, page 1-9
Modify tests, page 1-10
Change the execution sequence, page 1-10
Run “4terminal-n-fet” test sequence, page 1-11
Save and export test data, page 1-12
1
1-2Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
SubVt slope
This application demonstrates how to use the Formulator to determine the slope of a specified
portion of an IV curve. For additional information regarding the Formulator and parameter
extraction, refer to the 4200-SCS Reference manual.
Open “default” project
If the “default” project is not currently open, open it using the Open Project item of the File menu
on the toolbar.
Open “subvt” test and display graph
The test is opened by double-clicking “subvt” in the Project Navigator. With the test in the
Workspace, click the Graph tab to display the graph (Figure 1-1).
The Formulator is used to determine the sub-thre
calculated by performing an exponential line-fit over a specified portion of the IV curve. The
straight blue line (IDFIT) is the result of the line-fit. The displayed slope value (SUBVTSLP) is the
slope of IDFIT and, in this case, the slope of the fitted portion of the IV curve.
Figure 1-1
Graph for the “subvt” test
shold slope for the IV curve. The slope is
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualGraphical Data Analysis and Basic Test Sequencing1-3
Click to open
Formulator panel
Fomula Definition Box
Formula List
Line-fit analysis
The formulas to calculate sub-threshold slope were created using the Formulator. To open the
Formulator window, click the Definition tab in the Workspace, and then click the Formulator
button as shown in Figure 1-2.
Figure 1-2
Open Formulator window
The formulas for the “subvt” test are shown in F
igure 1-3. The formulas created for the test are
listed below the formula definition box at the top of the window.
The ST
ARTI and STOPI formulas specify the portion of the IV curve for the line-fit. These two
current data points are shown in Figure 1-4. Notice that these start/stop points section off a linear
portion of the IV curve.
The ID
FIT formula uses the STARTI and STOPI values to calculate the data points for the IDFIT
line, which is the straight blue line in the graph. Finally, the SUBVTSLP formula calculates the
slope of the IDFIT line.
NOTESome engineers prefer to view the inverse of the subthreshold slope. This is easily
accomplished by adding the formula:
INVSUBVTSLP = 1/SUBVTSLP.
Figure 1-3
Formulator for “subvt” test
Return to Section Topics List4200-904-01 Rev. E / June 2008
1-4Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
STARTI = 1E-10
STOPI = 1E-5
Figure 1-4
Start and stop points for the line-fit
Modify the line-fit
The following exercise shows how to modify the line-fit.
1.Open the Formulator window
2.In the formula list, double-click STOPI = 1E-5 to place it in the formula definition box.
3.Using the keyboard, change the stop value to 1.0E-2 as shown in Figure 1-5.
4.Click the Add button (Figure 1-5) to place the modified formula in the list.
NOTEA pop-up menu will indicate that the formula already exists. Click Yes to update the
formula.
5.Close the Formulator by clicking the Close
6.In the Workspace, click the Graph tab to display the graph.
Figure 1-5
Changing the STOPI value
for the “subvt” test.
button at the bottom of the window.
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualGraphical Data Analysis and Basic Test Sequencing1-5
STARTI = 1E-10
STOPI = 1E-2
As shown in Figure 1-6, the IV curve does not fit the slope of the IDFIT line. This is because the
exponential line-fit was performed on a non-linear portio
Figure 1-6 show the non-linear portion of the IV curve used
invalidates the SUBVTSLP results.
Figure 1-6
Modified line fit
n of the IV curve. The start/stop points in
for the line-fit. This of course,
The above exercise demonstrates the value of displaying
good line-fit as shown in Figure 1-1, then the “SUBVTSLP” value is the slope for the fitted portion
of the IV curve.
Graphical analysis
This application demonstrates how to analyze graphical data using Cursors. With a Cursor
positioned on a curve, the X and Y coordinate readings for the graph point are displayed in the
graph. For details, refer to the 4200-SCS Reference manual.
Open “default” project and “vds-id” test
If the “default” project is not currently open, open it using the Open Project item of the File menu
on the toolbar.
The test is opened by double-clicking “vds
the IDFIT line in the graph. If there is a
-id” in the Project Navigator.
Return to Section Topics List4200-904-01 Rev. E / June 2008
1-6Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
Display and analyze the “vds-id” graph
Step 1. Display the graph
In the Workspace, click the Graph tab for the “vds-id” test to display the graph. A typical graph for
this test is shown in Figure 1-7.
Figure 1-7
“vds-id” graph
Step 2. Open Graph menu
While a graph is displayed, the Graph menu can be opened from the Too ls menu as shown in
Figure 1-8. It can also be opened by placing the mouse pointer in an open area of the graph, and
clicking the right mouse button. The Graph
Figure 1-8
Tools menu access to Graph Settings
menu is shown in Figure 1-9.
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualGraphical Data Analysis and Basic Test Sequencing1-7
Figure 1-9
Graph Settings
Step 3. Enable Cursors
In the Graph menu, select the Cursors item to display the Cursors window. The Cursors window
in Figure 1-10 shows that Cursors 1, 2, 3 and
by clicking the Vi
click OK to close the window. For details, refer to the 4200-SCS Reference manual..
sible box in the Cursor area of the window. With the desired Cursor(s) enabled,
4 are enabled. A Cursor is enabled (√) or disabled
The Cursor(s) will appear at the first data point of the first dat
Figure 1-10
Cursors window
a series as shown in Figure 1-11.
Return to Section Topics List4200-904-01 Rev. E / June 2008
1-8Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
Initial position of cursors
Figure 1-11
Initial Cursor position
Step 4. Position Cursor on I-V curve
To position a Cursor, place the mouse pointer on the Cursor, hold down the left mouse button, and
drag it to the desired point on an IV curve. The drain voltage (x-axis) and drain current (y-axis)
readings for the graph point are displayed in the Cursor Display at the bottom of the graph.
The properties of each Cursor can be set by right-clicking the Cursor. The Cursors windo
be opened by right-clicking the Cursor Display.
In Figu
re 1-12, Cursor data provides the drain current readings for each IV curve at a drain voltage
of 3V.
Figure 1-12
Graph with Cursors
w can
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualGraphical Data Analysis and Basic Test Sequencing1-9
Sequencing tests on a single device
This application demonstrates how to run a test sequence on a single device. When the test
sequence is started, the tests for the device will execute in the order that they are presented in the
Project Navigator. That is, they will be executed in top-down order. For details refer to the 4200SCS Reference manual.
This application will also show you how to change the order of execution for the test sequence. For
etails, refer to the 4200-SCS Reference manual..
d
Open “default” project
If the “default” project is not currently open, open it using File -> Open Project.
Open “4terminal-n-fet” tests
The partial Project Navigator in Figure 1-13 shows the five tests for the “4terminal-n-fet” device.
Double-click each test to open it and place it in the Workspace.
Figure 1-13
Project Navigator — “4terminal-n-fet” tests
Figure 1-14
name tab at the bottom of the Workspace, or double-c
Figure 1-14
“4terminal-n-fet” tests opened in Workspace
shows all five tests opened in the Workspace. A test is displayed by clicking the test
licking on the test in the Project Navigator.
Return to Section Topics List4200-904-01 Rev. E / June 2008
1-10Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
Modify tests
All instrument selections shown on the Definition tab must match the actual physical connections
to the device. If you change the instrument selections for one test, you must also make the same
change to the other four tests on that device so that the tests can be executed as a sequence.
Change the execution sequence
The order of presentation in the Project Navigator determines the execution sequence. For the
Project Navigator in Figure 1-13, the “4terminal-n-fet” tes
order:
ts will execute in the following, top-down,
“vds-id”⇒ “
Perform the following steps to change the execution sequence so that “ig-vg” is the first test to be
ex
ecuted:
vtlin” ⇒ “subvt” ⇒ “vgs-id” ⇒ “ig-vg”
Step 1. Open Device Plan window
The Device Plan for the “4terminal-n-fet” device is opened by double-clicking “4terminal-n-fet” in
the Project Navigator. The Device Plan Sequence tab is shown in Figure 1-15.
Notice that the execution sequence for the test
Sequence Table of the Device Plan.
Figure 1-15
Device Plan window for “4terminal-n-fet”
s in the Project Navigator appears in the Test
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualGraphical Data Analysis and Basic Test Sequencing1-11
Step 2. Select and move “ig-vg”
The “ig-vg” test is selected by clicking on it in the Test Sequence Table. Figure 1-15 shows
-vg” selected. Use the Move Up button to move the test to the top of the sequence table.
“ig
Figure 1-16 shows the new order for the T
Figure 1-16
New order for test sequence table
est Sequence Table.
Step 3. Apply new execution sequence to the Device Plan
In the Device Plan window (Figure 1-15), click the Apply button to apply the new execution
sequence to the project. The partial Project Navigator in Figure 1-17 shows the new execution
sequence.
Figure 1-17
Project Navigator — new execution sequence
Run “4terminal-n-fet” test sequence
Step 1. Select “4terminal-n-fet” Device Plan
In the Project Navigator, click “4terminal-n-fet” to select the test sequence. That Device Plan name
appears in the Test/Plan Indicator box as shown in Figure 1-18.
Figure 1-18
“4terminal-n-fet” selected to run
By selecting “4t
device will be executed.
erminal-n-fet” and pressing the Run button, all of the tests associated with this
Return to Section Topics List4200-904-01 Rev. E / June 2008
1-12Graphical Data Analysis and Basic Test Sequencing4200-SCS Applications Manual
Save
Save All
Step 2. Click Run button to execute the test sequence
The green Run button starts the test sequence. The name of each individual test will be displayed
in the Test/Plan Indicator box while it is being executed.
You can observe data being graphed while each test is in p
its tab at the bottom of the Workspace. For example, click the ig-vg#1@1 tab to display the test.
The graph for the test is then displayed by clicking the Graph tab at the top of the Workspace.
Save and export test data
The toolbar buttons to save test data are shown in Figure 1-19. Click Save to save test data and
the setup for the selec
in project.
As previously explained, data for each te
Figure 1-19
Saving test data
ted (displayed) test. Click Save All to save test data and setups for all tests
rogress. A test is displayed by clicking
st can be exported as an Excel workbook.
4200-904-01 Rev. E / June 2008Return to Section Topics List
Advanced Applications
Section Topics List
Controlling a switch matrix, page 2-2
KCON setup, page 2-4
Open KITE and the “ivswitch” project, page 2-6
Running test sequences, page 2-7
“connect” test description, page 2-9
Sequencing tests on multiple devices, page 2-10
Open “ivswitch” project, page 2-10
Execute the test sequence (Subsite Plan), page 2-12
Customizing a user test module (UTM), page 2-12
Open KULT, page 2-13
Open the “ki42xxulib” user library, page 2-14
Open the “Rdson42XX” user module, page 2-15
Copy “Rdson42XX” to “RdsonAvg”, page 2-16
Open and modify the “RdsonAvg” user module, page 2-17
Save, compile, and build the modified library, page 2-19
Add a new UTM to the “ivswitch” project, page 2-20
•Controlli
connect any instrument terminal to any test system pin.
•Seq
will utilize a switch matrix to automatically test all of the devices in the “ivswitch” project.
•Cust
using the Keithley User Library Tool (KULT).
The following equipment is r
correlates with data included with the “ivswitch” sample project.
•1 - Keithley Model 4200-SCS with a total of three SMUs (PreAmps not required)
•1 - Keithley Model 8006 Component Test Fixture
•1 - Keithley Model 707A or 708 Switch Matrix
•1 - Keithley Model 7072 or 7174A 8×12 matrix card
•4 - Keithley Model 4200-MTRX-X cables (0 if using PreAmps)
•12 - Keithley Model 4200-TRX-X cables (16 if using PreAmps)
•1 - Keithley Model 7007 GPIB cable
•1 - Keithley Model 236-ILC-3 safety interlock cable
•1 - NPN transistor (2N3904 or similar)
•1 - N-channel MOSFET (Temic SD210DE or similar)
•1 - Capacitor (10pF)
•1 - Resistor (1GΩ)
•1 - Diode (1N970B or similar)
ng a switch matrix — Demonstrates how to use a switch matrix to automatically
uencing tests on multiple devices — Demonstrates how to run a test sequence that
omizing a user test module (UTM) — Demonstrates how to modify a user module
equired to complete this tutorial and obtain data that functionally
Controlling a switch matrix
This tutorial demonstrates how to use a switch matrix to automatically connect any instrument
terminal to any test system pin. The “ivswitch” sample project will be used to illustrate this
functionality. Before loading and running the “ivswitch” project, the 4200-SCS, switch matrix, and
component test fixture must be connected as illustrated in Figure 2-1.
The switch matrix is controlled by the 4200-SCS via
to connect the Model 707 Switching Matrix to the 4200-SCS. For connection details, refer to the
4200-SCS Reference manual. This example shows a Model 7174A matrix card installed in slot 1
of a Model 707A Switching Matrix. The row-column connection scheme is used for this tutorial.
A User Test Module (UTM) is used to control the switch
is started, the UTM will close the appropriate matrix crosspoints to connect the specified
instrument terminals to the appropriate test system pins. For details on UTMs, refer to the 4200SCS Reference manual.
the GPIB bus. Use a Model 7007 GPIB cable
matrix. When a test sequence for a device
4200-904-01 Rev. E / June 2008Return to Section Topics List
After connecting the system as indicated in Figure 2-1, run the Keithley CONfiguration utility
(KCON)
used to manage the configuration of all instrumentation controlled by the 4200-SCS software.
Once the matrix and test fixture have been added, and the instrument-to-matrix-to-pins
connections have been defined, simply specify an instrument terminal and test system pin and
KITE will automatically connect the two using the matrix. In general, changes to the system
configuration will only be necessary when changes to instrument-to-matrix-to-pins wiring are
made.
to add the switch matrix and test fixture to the system configuration. In general, KCON is
Follow the steps below to start KCON and modify
For additional information regarding KCON, refer to the 4200-SCS Reference manual. Similarly,
for additional information regarding switch matrix configuration and usage, refer to the 4200-SCS
Reference manual.
1.On the desktop, double-click the KCON ic
2.Using the Tools menu, add a switch matrix to the system configuration as indicated in
Figure 2-2.
Figure 2-2
Add a switch matrix to the system configuration
3.Using the T
Figure 2-3.
Figure 2-3
Add a test fixture to the system configuration
ools menu, add a test fixture to the system configuration as indicated in
the system configuration as described above.
on to open KCON.
4200-904-01 Rev. E / June 2008Return to Section Topics List
4.Select the KI 707/707A Switching Matrix - MTRX1 item in the Configuration Navigator
(tree control on left side of screen) and add a Keithley 7174 Low Current Matrix Card to
Slot 1 of the switch matrix. Add the switch card using the pull down menu on the Properties
tab. See Figure 2-4.
Figure 2-4
Add a switch card to the system configuration
5.Select the KI 7174
SMUs, GNDU, and test fixture pins as indicated in Figure 2-1 using the pull down menus on
the Properties tab. See Figure 2-5.
Figure 2-5
Define the system connections
Matrix Card - CARD1 item in the Configuration Navigator. Connect the
Return to Section Topics List4200-904-01 Rev. E / June 2008
6.Save the system configuration and Exit KCON. See Figure 2-6.
Figure 2-6
Save the system configuration
Open KITE and the “ivswitch” project
1.On the desktop, double-click the KITE icon to open KITE.
2.Open the “ivswitch” project from the File menu on the KITE toolbar (click Open Project).
The Project Navigator for the “ivswitch” project is shown in Figure 2-7.
Figure 2-7
Project Navigator - “ivswitch” project
4200-904-01 Rev. E / June 2008Return to Section Topics List
NOTEFor detailed information regarding test and sequence execution, refer to the 4200-SCS
Reference manual.
The “ivswitch” project uses the same ITMs that are used in the “default” project. The primary
d
ifference between the two projects is that the “ivswitch” project uses “connect” UTMs to control
the switch matrix. As shown in Figure 2-7, there is a “connect” UTM at the beginning of each
device test sequence.
A test sequence for a device is executed by selecting the Device
Plan, and then clicking the green
Run button. When a Device Plan is started, the connect test closes the appropriate matrix
crosspoints to connect the instruments to the appropriate device.
All devices may be tested by
Figure 2-8 th
rough Figure 2-12 show the signal paths that are automatically selected for the five
selecting the Subsite Plan and clicking the green Run button.
devices.
Figure 2-8
Signal paths for “4terminal-n-fet” tests
Figure 2-9
Signal paths for “3terminal-npn-bjt” tests
Return to Section Topics List4200-904-01 Rev. E / June 2008
In the Project Navigator, double-click “connect” under the “4terminal-n-fet” device to open the test.
The test is shown in Figure 2-13.
Figure 2-13
“connect” test
The “connect” test is a User Test Module (UTM). KITE su
Interactive Test Modules (ITMs) and UTMs. A UTM, like an ITM, has Definition, Sheet, Graph,
and Status tabs. The operation of each tab, regardless of test module type, is identical except for
the Definition tab.
On the UTM De
Library, and sets the module parameter values. This information is stored with the UTM when it is
saved. When a UTM is executed, the parameters will be passed from the UTM to the user module
and the user module will be executed. User libraries and user modules are created and managed
using the Keithley User Library Tool (KULT). Refer to the 4200-SCS Reference manual for more
information regarding user libraries.
In this example, the “connect” UTM is connected to the ConneMatrixulib user library. ConnectPins has a total of 17 parameters. The first parameter, OpenAll,
will cause ConnectPins to open all matrix crosspoints before closing any additional crosspoints. It
is a good practice to open all the switch connections before making any new closures. Inadvertent
switch closures may damage DUT.
The 16 additional parameters are comprised of eig
each specified terminal-pin-pair causes Conne
Because the instrument-to-matrix-to-pin connectivity was defined using KCON, KITE is able to
automatically connect the specified instrument terminals to the appropriate tester pins.
NOTEIf a Pin parameter is < 1, the terminal-pin-pair is ignored and no matrix connections are
made.
finition tab, the user connects the UTM to a User Module located within a User
ctPins to make the desired matrix connection.
pports two types of test modules;
ctPins user module in the
ht terminal-pin-pairs. As shown in Figure 2-14,
Return to Section Topics List4200-904-01 Rev. E / June 2008
For the previous tutorial, a switch matrix was added to the test system to automate connection
changes for different devices. When a test sequence for a device (Device Plan) is executed, the
“connect” test closes the appropriate matrix crosspoints to connect that device to the appropriate
instrumentation. The test sequence stops after the Device Plan has been executed.
This tutorial demonstrates how to run a test s
the “ivswitch” project. After all the devices have been tested, the test sequence will stop.
Open “ivswitch” project
If the “ivswitch” project is not currently open, open it using the Open Project item of the File menu
on the toolbar. The Project Navigator for the “ivswitch” project is shown in Figure 2-15.
With a switch matrix added to the system, all the devices
sequence from the subsite level of the Project Navigator. Figure 2-15 shows the Subs
selected (highlighted) to execute.
Figure 2-15
Project Navigator - “ivswitch” project
equence that will automatically test all the devices in
can be tested by starting the test
itePlan
4200-904-01 Rev. E / June 2008Return to Section Topics List
The Project Navigator shows the execution sequence for the Subsite Plan. As shown in
Figure 2-15, the “4terminal-n-fet” will be tested first, followed by test
s for the other four devices.
The device test sequence may be changed using the Subsite Plan Sequence t
exercise shows how to change the test sequence by making “diode” the first device in the
sequence:
1.In the Project Navigator, double-click “subsite” to op
Figure 2-16).
2.In the Device Sequence Table, click “diode” to select it. Figure 2-16 shows “diode”
selected.
3.Use the Move Up button to move “diode” to the top of the sequence table (Figure 2-17).
4.At the bottom right-hand corner of the Subsite Plan window, click the Apply button to
change the sequence (see Figure 2-18).
Figure 2-16
Subsite Plan window
en the Subsite Plan window (see
ab. The following
Figure 2-17
“diode” moved to top of sequence table
Return to Section Topics List4200-904-01 Rev. E / June 2008
To select the Subsite Plan, click “subsite” in the Project Navigator. The Subsite Plan name will
appear in the execution indicator box as shown in Figure 2-19.
To execute the Su
the switch matrix, which connects the device to the instrumentation. The switch matrix was added
in the previous application “Controlling a switch matrix” on page 2-2.
While each test is running, the
test “vt” is executed, the testing process will stop.
Figure 2-19
Execution indicator box
bsite Plan, click the green Run button. The first test for each device will control
test name will appear in the execution indicator box. After the last
Customizing a user test module (UTM)
This tutorial demonstrates how to modify a user module using the Keithley User Library Tool
(KULT). In the “ivswitch” project, there is a test named “rdson.” The “rdson” test measures the
drain-to-source resistance of a saturated N-channel MOSFET as follows:
1.Applies 2V to the gate (Vg) to s
2.Applies 3V to the drain (Vd1) and performs a current measurement (Id1).
3.Applies 5V to the drain (Vd2) and performs another current measurement (Id2).
4.Calculates the drain-to-source resistance “rdson” as follows:
“rdson” = (Vd2-Vd1) / (Id2-Id1)
aturate the MOSFET.
4200-904-01 Rev. E / June 2008Return to Section Topics List
The “rdson” test has a potential shortcoming. If the drain current is noisy, the two current
measurements may not be representative of the actual drain current. Therefore, the calculated
resistance may be incorrect.
In this example, the user module will
be performed at Vd1 and 10 more at Vd2. The current readings at Vd1 will be averaged to yield
Id1, and the current readings at Vd2 will be averaged to yield Id2. Using averaged current readings
smooths out the noise. For details on using KULT, refer to the 4200-SCS Reference manual.
Open KULT
From the desktop, open the KULT tool by double-clicking the KULT icon. The KULT main window
is shown in Figure 2-20.
Figure 2-20
KULT main window
be modified in KULT such that 10 current measurements will
Return to Section Topics List4200-904-01 Rev. E / June 2008
The new module will be created by copying the “Rdson42XX” module as “RdsonAvg” and then
making the appropriate changes to the test module.
1.From the Fi
2.From the Copy Module window, select “ki42xxulib” as shown in Figure 2-23B and click OK. This selects the library for the module.
3.From the Enter New Module Name window, type in the name as shown in Figure 2-23C
and click OK. A dialog box will remind you that the library using the new module will have to
be built. Click OK.
Figure 2-23
Copy “Rdson42xx” module as “RdsonAvg”
le menu, select the Copy Module item (see Figure 2-23A).
4200-904-01 Rev. E / June 2008Return to Section Topics List
avgi (SMU2, Id2, 10, 0.01); // Perform averaged I measurement
avgi (SMU2, Id1, 10, 0.01);// Perform averaged I measurement
Modify the user module code
The measi commands are to be replaced with avgi commands. While a measi command
performs a single measurement, an avgi command performs a specified number of
measurements, and then calculates the average reading. For example:
avgi (SMU2, Id1, 10, 0.01);
For the above command, SMU2 pe
rforms 10 current measurements and then calculates the
average reading (Id1). The 0.01 parameter is the delay between measurements (10ms).
The source code for the module is located in the module code area of the window. In this area,
ma
ke the changes indicated in the following NOTE.
NOTEFor details on modifying a KULT program, refer to the 4200-SCS Reference manual.
Figure 2-25
Program modifications
4200-904-01 Rev. E / June 2008Return to Section Topics List
A. Select Save ModuleB. Select CompileC. Select Build Library
Change a parameter name
With the Parameters tab selected, the parameter names for the module are listed in a table
located at the bottom of the window. Change the parameter name “Rdson” (shown in
Figure 2-24) to “Rdson10”. Af
change.
NOTEFor details on the Parameters tab, refer to the 4200-SCS Reference manual.
ter typing in the new parameter name, click Apply to enter the
Change the module description
Click the Description tab to display the description for the module. Above DESCRIPTION, change
MODULE: Rdson42xx to MODULE: RdsonAvg as shown in Figure 2-26. In addition, replace all
occurrences of Rdson with Rds
show the text that is entered on the Description tab in KULT.
Figure 2-26
Module name for Description
on10. In KITE, any UTMs that are connected to this module will
Save, compile, and build the modified library
The user module has to be saved and compiled. Finally, the library must be rebuilt to ensure that
the new module is available for use by KITE UTMs. These operations are performed from the File
and Options menus.
In the order shown in F
will be displayed to indicate that the c
details, refer to the 4200-SCS Reference manual.
Figure 2-27
Save, compile, and build library
igure 2-27, save, compile, and build the library. Note that pop-up windows
ompile and library building operations are in process. For
Return to Section Topics List4200-904-01 Rev. E / June 2008
A. Select New User Test ModuleB. Type in “rdson10” and click OK
Add a new UTM to the “ivswitch” project
Open KITE and load the “ivswitch” project
1.From the desktop, open KITE by double-clicking the KITE icon.
2.Open the “ivswitch” project from the File menu.
The Project Navigator for the “ivswitch” project is shown in Figu
last test for the “4ter
Figure 2-28
Project Navigator for “ivswitch” project
minal-n-fet” device.
re 2-28. Notice that rdson is the
Add a new UTM
1.In the Project Navigator, single-click rdson to select it. This establishes the position for the
new UTM.
2.From the Project menu, select New User Test Module (see Figure 2-29A).
3.In the Add New User Test Module (UTM) to Project window, type in the new name as
shown in Figure 2-29B and click OK. Figure 2-30 shows the new UTM added to the Project
Navigator.
Figure 2-29
Add new UTM
4200-904-01 Rev. E / June 2008Return to Section Topics List
Connect the “rdson10” UTM to the “RdsonAvg” user module
In the Project Navigator, double-click “rdson10” test to open it. The test will open in the
Workspace with the Definition tab blank.
Referring to Figu
box in the UTM. Next, select “Rds
Figure 2-31
“rdson10” UTM
re 2-31, select “ki42xxulib” from the drop-down menu for the User Libraries
onAvg” from the menu for the User Modules box.
Test description
The “rdson10” test measures the drain-to-source resistance of a saturated MOSFET. Using the
user-input parameter values shown in Figure 2-31, the MOSFET is tested as follows when
“rdson10” is executed:
1.Applies 2V
2.Applies 3V to the drain (Vd1) and performs 10 current measurements.
3.Averages the 10 current readings to yield a single reading (Id1).
4.Applies 5V to the drain (Vd2) and performs 10 more current measurements.
5.Averages the 10 current readings to yield a single reading (Id2).
6.Calculates the drain-to-source resistance (rdson10) as follows:
“Rdson10” = (Vd2-Vd1) / (Id2-Id1)
to the gate (Vg) to saturate the MOSFET.
Return to Section Topics List4200-904-01 Rev. E / June 2008
The following equipment is r
correlates with the sample data provided with the sample projects.
•1 - Keithley Model 4200-SCS with a total of three SMUs (PreAmps not required)
•1 - Keithley Model 590 CV Analyzer
•1 - Hewlett Packard 8110A/81110A Pulse Generator
•1 - Keithley Model 707 or 708 Switch Matrix
•1 - Keithley Model 7072 or 7174 8×12 matrix card
•1 - Keithley Model 8006 Component Test Fixture
•1 - Probe station (manual or supported semi-autom
•2 - Keithley Model 4801 BNC cables
•1 - Keithley Model 7078-TRX-BNC adapter
•1 - Keithley Model 8007-GND-3 cable
•4 - Keithley Model 4200-MTRX-X cables (0 if using PreAmps)
•8 - Keithley Model 4200-TRX-X cables (11 if using PreAmps)
•2 - Keithley Model 7007 GPIB cables
•1 - Keithley Model 236-ILC-3 safety interlock cable
rolling External Equipment Overview — Generically describes how external
instruments are controlled by the Model 4200-SCS.
rolling a CV Analyzer — Demonstrates how to create a KITE project that uses a
Keithley Model 590 CV Analyzer to acquire CV data from a MOS capacitor.
rolling a Pulse Generator — Demonstrates how to use the “ivpgswitch” KITE project
to control an HP Model 8110A/81110A Pulse Generator. The pulse generator is used to
stress a semiconductor device and the effects of the stress are then analyzed.
rolling a Probe Station — Demonstrates how to use the “probesubsites” KITE project
to five identical sites (or die or reticles) on a semi-conductor wafer. Each test site is
comprised of two subsites (or test element groups). Therefore, the wafer will be probed a
total of 10 times.
equired to complete this tutorial and obtain data that functionally
atic) and a wafer containing test devices
(MOS capacitor, N-channel MOSFET, and NPN bi-polar transistor)
Controlling external equipment overview
In general, the Model 4200-SCS can control any external instrument or component connected to
either of the following communication interfaces:
•IEEE-488 (GPIB) bus
•RS-232 (COM1) port
When an external instrument is added to the system configuration, it is grouped into one of the
ing categories:
follow
•Switch Matrix
•Capacitance Meter
•Pulse Generator
•Probe Station or Test Fixture
•General Purpose Test Instrument
This is illustrated in Figu
further discussed in the Reference sections.
4200-904-01 Rev. E / June 2008Return to Section Topics List
re 3-1. The properties associated with each instrument category are
User modules are utilized to acces
equipment. User modules are stored in user libraries which are created and maintained with the
Keithley User Library Tool (KULT). See the Reference sections for additional information regarding
creating and maintaining user libraries.
To execute a KUL
T user module in KITE, you create a KITE User Test Module (UTM) and connect
s these communication interfaces, and hence control external
it to the user module. Once this user module is connected to the UTM, the following occurs each
time KITE executes the UTM:
•KITE dynam
•KITE p
asses the user-module parameters—stored in the UTM—to the user module.
ically loads the user module and the appropriate user library.
•Data generated by the user module is returned to the UTM for interactive analysis.
Return to Section Topics List4200-904-01 Rev. E / June 2008
Figure 3-2 below illustrates the relationships between user libraries, user modules, UTMs, KITE,
and KUL
T.
Figure 3-2
Relationships between KULT and KITE and between user libraries, user modules, and UTMs
Keithley provides a number of standard user librar
in semiconductor characterization applications. Standard libraries of user modules for the following
equipment are provided:
Table 3-1
Supported external equipment table
CategoryInstrumentKeithley User Library / Additional Information
Switch MatrixKeithley Model 707/707A
Switchin
Capacitance
Meter
Pulse
nerator
Ge
Probe StationKarl Suss Model PA-200
Test FixtureKeithley Model 8006
Keithley Model 590 CV Analyzerki590ulib / 4200-SCS Reference manual.
ki595ulibModel 595 Quasistatic CV Meter Instruction Manual
ki82ulib4200-SCS Reference manual.
Hewlett Packard Model 4284
LCR Meter
Hewlett Packard Model 8110A
Pulse Generator
Semiau
Micromanipulator Model 8860
Semiau
Manual and/or Fake probe station prbgen / 4200-SCS Reference manual.
g Matrix
tomatic probe station
tomatic probe station
Component Test Fixture
Keithley Model 8007
Sem
iconductor Test Fixture
Generic test fixture(not applicable)
General
Pu
rpose Test
Instrument
(any IEEE-488 or RS-232
controlled instrument or
equipment)
ies to control external equipment typically used
matrixulib / 4200-SCS Reference manual
ocument number 595-901-01)
(d
hp4284ulib / 4200-SCS Reference manual.
hp8110ulib / 4200-SCS Reference manual.
prbgen / 4200-SCS Reference manual.
prbgen / 4200-SCS Reference manual.
(not applicable)
(not applicable)
(created by user)
NOTEContact Keithley for the most up to date list of supported external equipment.
4200-904-01 Rev. E / June 2008Return to Section Topics List
This tutorial demonstrates how to control a Keithley Model 590 CV Analyzer to acquire
capacitance vs. voltage (CV) data from a MOS capacitor. This tutorial also demonstrates how to
create a new KITE project. The new project will contain one User Test Module (UTM) that is
connected to a standard CV user module supplied with each 4200-SCS.
The CV Analyzer will apply a linear staircase volt
age sweep to a capacitor. A capacitance
measurement will be performed on every voltage step of the sweep. Figure 3-3 shows a typical CV
curve generated by this test.
Figure 3-3
Typical CV curve
Connections
Connection details for the Model 590 CV Analyzer are provided in the 4200-SCS Reference
manual. In general, the INPUT and OUTPUT connectors of the Model 590 are connected to the
capacitor using Model 4801 (RG-58) BNC cables. The Model 590 is controlled by the 4200-SCS
through the GPIB bus. Use a Model 7007 GPIB cable to connect the Model 590 to the Model
4200-SCS. Figure 3-4 provides an illustration of
Figure 3-4
Keithley Model 590 CV Analyzer DUT connections
these connections.
Return to Section Topics List4200-904-01 Rev. E / June 2008
For this tutorial, the Model 590 CV Analyzer must be included in the 4200-SCS system
configuration. The Keithley CONfiguration utility (KCON) is used to add external equipment and
instrumentation to the test system. Follow the steps below to add the Model 590 to the system
configuration using KCON:
NOTEFor details on KCON, refer to the 4200-SCS Reference manual.
Step 1. St
Step 2. Add
Figure 3-5
Adding a Keithley 590 CV Analyzer to the system configuration
Step 3. Set the GPIB ad
Figure 3-6
Setting the Model 590 GPIB address
art KCON. Double click on the KCON icon or use the Start menu, Start -> Programs ->
Keithley -> KCON.
the Keithley Model 590 CV Analyzer to the system configuration using the KCON
Tools menu as illustrated in Figure 3-5.
dress for the Model 590 by selecting the KI 590 CV Analyzer - CMTR1 in
the Configuration Navigator and entering the appropriate GPIB address on the Properties
& Connections tab. This is illustrated in Figure 3-6.
Step 4. Save the config
Figure 3-7
Saving the system configuration
4200-904-01 Rev. E / June 2008Return to Section Topics List
uration using the KCON File menu as illustrated in Figure 3-7.
A subsite, or test element group, is a collection of devices to be tested. Open the Add New
Subsite Plan to Project window by clicking the Add new Subsite Plan button on the toolbar (see
Figure 3-10A)
(see Figure 3-10B).
Figure 3-10
Add a new Subsite Plan to a KITE project
. It can also be opened by clicking the New Subsite Plan item on the Project menu
With the Add Ne
subsite and
w Subsite Plan to Project window open (see Figure 3-11A), type in the name
click OK. The Subsite Plan appears in the Project Navigator as shown in
Figure 3-11B.
Figure 3-11
Add a new Subsite Plan
Add a Device Plan
1.A Device Plan is a collection of tests to be performed on a particular device. Open the Add
New Device Plan to Project window by clicking the Add new Device Plan button on the
toolbar (see Figure 3-12A). It can also be opened by clicking the New Device Plan item on
the Project menu (see Figure 3-12B).
Figure 3-12
Add a new Device Plan to a KITE project
4200-904-01 Rev. E / June 2008Return to Section Topics List
A. Window to specify Device Plan nameB. Project Navigator
2.In the window to add a Device Plan (Figure 3-13A), double-click the Capacitor folder to
open it, and then click capacitor to select that Device Plan name.
3.With the capacitor Device Plan selected, as shown in Figure 3-13A, click OK at the bottom
of the window. The Device Plan will appear in the Project Navigator as shown in
Figure 3-13B.
Figure 3-13
Add a Device Plan
Add a UTM
The “cvsweep” UTM is added to the new project by copying it from the default test library
C:\S4200\kiuser\tests) as follows:
(
1.In the Project Navigator, double-click on the ca
window.
2.On the Sequence tab of the Device Plan window, use the Test Library pull-down menu to
select the default test library as shown in Figure 3-14.
3.Double-click the Capacitor folder to open it and display the available tests for that device.
Figure 3-15A shows the Capacitor folder opened.
4.For the Capacitor folder, click “cvsweep” to select it. Figure 3-15A shows “cvsweep”
selected.
5.Click Copy to place the test in the Test Sequence Table. Figure 3-15A shows “cvsweep”
copied into the Test Sequence Table.
6.At the bottom of the Device Plan window, click Apply to copy the test into the Project
Navigator. Figure 3-15B shows the “cvsweep” UTM added to the project.
7.If desired, the Device Plan window may be closed by pressing the close (X) button. The
close (X) button is located on the right, above the Device Plan window.
pacitor device to open the Device Plan
Return to Section Topics List4200-904-01 Rev. E / June 2008
The default “cvsweep” parameters will sweep the voltage from -4V to +6V. If these parameters are
acceptable, proceed to “Executing the test” on page 3-11. To modify the parameters, perform the
following steps:
1.In the Project Navigator, double-click on the “cv
Figure 3-16 will be displayed:
Figure 3-16
“cvsweep” UTM
sweep” UTM to open it. The window in
2.Click on the De
NOTEFor details on the “cvsweep” UTM, refer to the 4200-SCS Reference manual.
Executing the test
Since this new project has only one Subsite Plan and only one Device Plan, the test can be run
from any level in the Project Navigator. To run the “cvsweep” test, simply click the green Run
button. After the test is finished, use the Sheet and Graph tabs to view and analyze the results.
NOTEThe 4200-SCS also supports the Keithley Model 595 Quasistatic C-V Meter and the
Keithley Model 82-WIN Simultaneous C-V System. For more information, refer to the
4200-SCS Reference Manual.
finition tab and make the desired parameter changes to the test.
Return to Section Topics List4200-904-01 Rev. E / June 2008
This tutorial demonstrates how to control a pulse generator to stress a semiconductor device and
analyze the effects of the stress. The applied stress is a burst of 3.5V pulses across the
gate-substrate (bulk) terminals of an N-Channel MOSFET
. The basic test sequence is as follows:
1.Measure the transfer characteristics
of the device before the stress.
2.Apply a stress burst of 3.5V pulses.
3.Measure the transfer characteristics of the device after the stress.
ter-stress characteristics can then be compared to the before-stress characteristics.
The af
Test system connections
A typical test system for this application is shown in Figure 3-17. As shown, the Model 4200-SCS,
HP Model 8110A/81110A Pulse Generator (PGU), an
Low Current Matrix Card. User Test Modules (UTMs) are used to control the switch matrix and the
PGU. For details on SMU, GNDU (Ground Unit) and matrix card connections, refer to the 4200SCS Reference manual.
The Model 7174A matrix card is installed in the Model 707/707A or Model 708/708A Switching
Matrix. The s
witch matrix and PGU are controlled through the GPIB. Use the Model 7007 GPIB
cables to connect the switch matrix and PGU to the Model 4200-SCS. For details on GPIB
connections, refer to the 4200-SCS Reference manual.
Figure 3-17
Test system for “ivpgswitch” project
d the DUT are connected to the Model 7174A
4200-904-01 Rev. E / June 2008Return to Section Topics List
For this tutorial, a Hewlett Packard Model 8110A/81110A Pulse Generator, Keithley Model 707A
Switching Matrix, Keithley Model 7174A Low Current Matrix Card, and a test fixture must be added
to the system configuration. The Keithley CONfiguration utility (KCON) is used to add external
equipment and instrumentation to the test system. Follow the steps below to add these
components to the system configuration. Detailed information regarding KCON can be found in the
4200-SCS Reference manual.
Step 1. St
Step 2. Add
Figure 3-18
Adding a pulse generator
Step 3. Set th
Figure 3-19
Pulse generator configuration
art KCON. Double click on the KCON icon or use the Start menu, Start -> Programs ->
Keithley -> KCON.
the Hewlett Packard Model 8110A/81110A Pulse Generator to the system
configuration using the KCON Tools menu as illustrated in Figure 3-18.
e GPIB Address for the pulse generator by selecting it in the Configuration Navigator
and entering the appropriate GPIB Address on the Properties & Connections tab. This
is illustrated in Figure 3-19.
Step 4. Add the Ke
the KCONTools menu as illustrated in Figure 3-20.
Figure 3-20
Adding a switch matrix
ithley Model 707/707A Switching Matrix to the system configuration using
Return to Section Topics List4200-904-01 Rev. E / June 2008
Step 5. Set the GPIB Address for the switch matrix and add the 7174A matrix card in Slot 1 as
illustrated in Figure 3-21.
Figure 3-21
Configuring the switch matrix
Step 6. Add
a manual probe station to the system configuration using the KCON Tools menu as
illustrated in Figure 3-22. If a test fixture is already part of the config
removed before the probe station can be added. T
the system configuration, select it in the Configuration Navigator and press the DELETE
key.
Figure 3-22
Adding a probe station
Step 7. Con
nect the instrument terminals and probe station pins to the switch matrix by selecting
the KI 7174 Matrix Card - CARD1 in the Configuration Navigator and configuring it as
illustrated in Figure 3-23. Detailed information regarding s
be found in the 4200 Reference Manual - Appendix B, “Using Switch Matrices”.
uration, it must be
o remove any external component from
witch matrix configuration can
4200-904-01 Rev. E / June 2008Return to Section Topics List
The project tests are described in the same order that they are presented in the Project Navigator.
First “connect” test
The first test, “connect”, is a UTM that connects the device to the four SMUs. In the Project
Navigator, double-click the first “connect” UTM to open it. Figure 3-26 shows the parameters that
connect the device to the SMUs. Note that the first parameter (line 1)
have been closed by a previous test. For the other parameter shown in Figure 3-26, the device
connects to the SMUs as shown in Figure 3-27.
NOTEFor details on the “connect” UTM, refer to the 4200-SCS Reference Manual.
Figure 3-26
First “connect” test - connects the device to the SMUs
opens any relays that may
Figure 3-27
Signal paths for the pre and post stress tests
First “id-vg” test
The “id-vg” ITM measures the transfer characteristics of the N-channel MOSFET. The ID vs. VG
data points are graphed. The test also calculates and graphs transconductance. This is the before-stress characterization test.
4200-904-01 Rev. E / June 2008Return to Section Topics List
This “connect” UTM connects the device to the PGU and the Ground Unit (GNDU). In the Project
Navigator, double-click the second “connect” test to open it. Figure 3-28 shows the parameters
that connect the device to the PGU. Not shown is line 1 (OpenA
the previous “connect” test. Line 1 is shown in Figure 3-26.
ll) that opens the relays closed by
For the parameters shown in Fig
ure 3-28, the device connection pathways to the PGU and GNDU
are shown in Figure 3-29. Keep in mind that if your physical matrix connections are different, you
will have to change the connection parameters
in the UTM accordingly.
Figure 3-28
Second “connect” test - connects the device to the PGU
Figure 3-29
Signal paths to apply the pulse stress
“pgu1-init” test
In the Project Navigator, double-click “pgu1-init” to open the test. This one parameter test (see
Figure 3-30) initializes the PGU. For exam
triggering. More information on the initialized s
Definition tab. For details on the UTMs for the pulse generator, refer to the 4200-SCS Reference
manual.
Figure 3-30
PGU initialization
Return to Section Topics List4200-904-01 Rev. E / June 2008
ple, it disables the output, resets errors and sets
In the Project Navigator, double-click “pgu1-setup” to open the test. The complete parameter
listing for the test is shown in Figure 3-31. These parameters to configure the PGU are explained
in the DESCR
IPTION area of the Definition tab.
Figure 3-32 sho
ws the pulse that is configured by this test. Note that the pulse is not drawn to
scale.
Figure 3-31
“pgu1-setup” - configure the PGU channel
Figure 3-32
PGU stress pulse specifications
“pgu-trigger” test
In the Project Navigator, double-click “pgu-trigger” to open the test. The 2-line parameter list for
this test is shown in Figure 3-33. This test triggers the PGU to output 60,000 pulses to the
N-channel MOSFET.
Figure 3-33
“pgu-trigger” test - trigger the burst of stress pulses
Third “connect” test
This “connect” test is the same as the first “connect” test. That is, it connects the device to the
SMUs so that the transfer characteristics can be determined after applying the pulse stress (see
4200-904-01 Rev. E / June 2008Return to Section Topics List
This “id-vg” test is the same as the first “id-vg” test. That is, it measures the transfer characteristics
of the N-channel MOSFET. This is the after-stress characterization test.
Running the test sequence
To run the test sequence, select (click) the “4terminal-n-fet” device in the Project Navigator, and
then click the green Run button. The test sequence is summarized in Table 3-2.
Table 3-2
Test sequence for “ivpgswitch” project
TestDescription
1“connect”Connects the MOSFET to the four SMUs.
2“id-vg”Measures the initial transfer ch
3“connect”Connects the MOSFET to the PGU.
4“pgu1-init”Initializes the PGU.
5“pgu1-setup”Configures the PGU output pulse.
6“pgu-trigger” Triggers the PGU to output a burst of pulses.
7“connect” Connects the MOSFET to the four SMUs.
8“id-vg”Measures the final transfer characteristics of
aracteristics of the MOSFET.
the MOSFET.
Compare the test results
A way to compare “id-vg” test results is to do a side-by-side visual inspection of the two graphs. In
the Project Navigator, double-click the two “id-vg” tests to open them in the Workspace.
Close some UTMs Workspace. Figure 3-34 shows the button to close a displayed test.
Make room for the graphs expand the size of the Workspace; and (2) reduce the size of the test documents. The close button
(X) is located at the top right-hand corner of the Project Navigator. Figure 3-34 shows the button to
reduce the size of the test documents in the Workspace.
Figure 3-34
Buttons to close or reduce size of test documents
Position tests side-by-side document and dragging it to the desired location in the Workspace.
To reduce clutter, you may want to remove any other tests (UTMs) from the
To make room for the two graphs, (1) hide the Project Navigator to
A test document is moved by clicking the title bar at the top of the
Return to Section Topics List4200-904-01 Rev. E / June 2008
Display the graphs - The graph for each test is displayed by clicking the Graph tab. Figure 3-35
shows typical graphs for the two “id-vg” tests.
Figure 3-35
“id-vg” graphs
Scale settings - T
o effectively compare the two graphs, they must both have the same scale
settings. Figure 3-36 shows the scale settings for the graphs in Figure 3-35. Scale settings for a
graph are set by clicking the Axis Properties item
in the Graph menu. A Graph menu is displayed
by placing the mouse pointer in an open area of the graph, and then right-clicking the mouse.
Keep in mind that there is a separate Graph menu (and Axis Properties window) for each graph.
Figure 3-36
Graph scale settings
Compare graphs -
Visually inspect the two graphs for differences caused by the stress. You can
also click the Sheet tabs and compare the data collected for the two tests.
Overlaying graphs
Another way to compare the two graphs is to lay the after-stress graph over the before-stress
graph as follows:
1.For the af
2.Select all five columns by clicking and dragging the mouse pointer from column A through
column E. Press CTRL + C to copy those columns.
3.For the before-stress test, click the Sheet tab, and then the Calc tab (located at the bottom).
4200-904-01 Rev. E / June 2008Return to Section Topics List
ter-stress test, click the Sheet tab to display the data spreadsheet.
4.In the Calc spreadsheet, click cell A1 to select it, and then press CTRL + V. This pastes the
copied columns into the Calc spreadsheet. This after-stress data is now available to be
graphed.
5.In the Calc spreadsheet, give the DrainI and GM columns new names to distinguish them
as after-stress (AS) data. For example, change DrainI to DrainI(AS), and change GM to
GM(AS).
6.Click the Graph tab for the present test (before-stress). In an open area of the graph, right-
click the mouse to open the graph menu. In the graph menu, click Define Graph to open the
Graph Definition window.
7.In the Graph Definition window, click the Y1/DrainI(AS) cell and the Y2/GM(AS) cell to
select them, and click OK. The graph will now show the overlaid data.
8.From the graph menu, use the Legend and Graph Properties - Series items to add a
legend and to change the line properties of the graph, if desired.
Controlling a probe station
This tutorial demonstrates how to control a probe station to test five identical sites (or die or
reticles) on a sample wafer. Each wafer site has two subsites (or test element groups). At each
subsite there are two devices (or test elements) to be tested; a 4-terminal N-channel MOSFET and
a 3-terminal NPN transistor. The subsites need not be identical, but for simplicity they are
assumed to be the same. This is illustrated below in Figure 3-37.
Figure 3-37
Sample wafer organization
Return to Section Topics List4200-904-01 Rev. E / June 2008
NOTEThe information provided in this overview is a summary of the information provided in the
4200-SCS Reference manual.
A probe station, like any other external instrument, is controlled by the 4200-SCS through user
modules. Basic
prbgen, is provided with the 4200-SCS to facilitate prober control. This generic prober user library,
system connections are illustrated in Figure 3-1. A library of user modules, called
developed and maintained by Keithley, allows KITE to control all supported probers in the same
manner. Therefore, KITE projects utilizing
prbgen will work with any prober supported by Keithley.
Refer to Ta bl e 3-3 for the list of supported prober.
Table 3-3
Supported probers
Supported Probe StationAdditional Information
Karl Suss Model PA-200
Micromanipulator Model 8860
Manual (or Fake)
Refer to the 4200-SCS Reference manual.
NOTEContact Keithley for the most up to date list of supported probe stations.
Sophisticated prober control software, available from each supported prober vendor, provides
ac
cess to the full feature set of each prober. In all cases, this prober control software provides the
ability to define a list of wafer locations to be probed. The 4200-SCS relies on the prober controller,
and associated software, to maintain this probe list. The
prbgen user modules communicate with
the prober controller, through the GPIB bus or COM1 port in most cases, to instruct it to step
through the probe list. This technique of prober control is referred to as learn mode because the
prober control software is taught where each probe location is physically located. Tab le 3-4
summarizes the user modules included in the
prbgen prober control user library.
Table 3-4
prbgen user modules
User ModuleDescription
PrInitInitializes the prober driver and establishes the referen
or UTM data acquired by KITE will be tagged with [row, column] site
coordinate information that is relative to the reference site.
PrChuckInstructs the prober to move the probe station chuck up or down, making or
king contact between the wafer and test system pins (probe needles).
brea
PrSSMovNxtInstructs the prober to move to the next subsite (or test element group) in the
e list.
prob
PrMovNxtInstructs the prober to move to the next site (or die) in the probe list.
Before a KITE project
that utilizes the prbgen user library can be executed, the probe list must be
ce site (or die). All ITM
created using the appropriate prober control software. Helpful instructions for creating the probe
list for each supported prober are included in the 4200-SCS Reference sections. Refer to
Ta bl e 3-3 for additional information.
4200-904-01 Rev. E / June 2008Return to Section Topics List
A typical test system for this tutorial is shown in Figure 3-38. As shown, the Model 4200-SCS and
probe station are connected to a 7174A matrix card. The matrix card is installed in the switch
atrix and the switch matrix and probe station are controlled through the GPIB bus. For
m
connection details as well as information on the Keithley CONfiguration Utility, refer to the 4200SCS Reference manual.
Figure 3-38
System configuration for the “probesubsites” project
KCON setup
For this tutorial, the following external equipment must be added to the system configuration:
•Switch matrix
•Matrix card
•Probe station
The Keithley CONfiguration utility (KCON) is used to ad
to the test system. Below is a step by step procedure for adding the necessary equipment to the
system configuration:
Step 1. St
art KCON. Double click on the KCON icon or use the Start menu, Start -> Programs ->
Keithley -> KCON.
d external equipment and instrumentation
Return to Section Topics List4200-904-01 Rev. E / June 2008
Step 2. Add the Keithley Model 707/707A Switching Matrix to the system configuration using
the KCON Tools menu as illustrated in Figure 3-39.
Figure 3-39
Adding a switch matrix
Step 3. Set th
e GPIB Address for the switch matrix and add the 7174A matrix card in Slot 1 as
illustrated in Figure 3-40.
Figure 3-40
Configuring the switch matrix
Step 4. Add
a manual probe station to the system configuration using the KCON Tools menu as
illustrated in Figure 3-41. If a test fixture is already part of the config
removed before the probe station can be added. T
the system configuration, select it in the Configuration Navigator and press the DELETE
key.
Figure 3-41
Adding a probe station
4200-904-01 Rev. E / June 2008Return to Section Topics List
Before KITE can begin controlling a probe station, the probe station must be properly configured.
Probe station configuration includes:
1. Making test system measurement and communication connections.
3. Loading and aligning the wafer.
2. Creating a probe list using the appropriate prober control software.
Helpful configuration instructions for each supported prober are include in the 4200-SCS
ference sections. Refer to Table 3-3 for additional information. Because this tutorial uses a
Re
Manual probe station, probe station configuration is
To configure a manual probe station, simply connect the test system measurement signals to the
probe station as indicated in Figure 3-38 and align the prober to the first subsite (test element
group) in the test sequence.
simple because step 2 above can be omitted.
Open the “probesubsites” project
Open the “probesubsites” project from the File menu on the KITE toolbar (click Open Project).
The Project Navigator for the “probesubsites” project is shown in Figure 3-44.
Figure 3-44
Project Navigator - probesubsites project
4200-904-01 Rev. E / June 2008Return to Section Topics List
In the Project Navigator, double-click “probesubsites” to open the project plan window. For this
tutorial, five sites on a wafer are to be tested. As shown in Figure 3-45, set up the project plan as
follows and click the Ap
ply button at the bottom right-hand corner of the window:
•Enable (√) P
•Enable (√)
•Start Execution at Site: 1
•Finish Execution at Site: 5
Figure 3-45
Modified project plan settings
roject Inititialization Steps
Project Termination Steps
Test descriptions
Test descriptions for the “probesubsites” project are provided in Tab le 3-5. Tests can be opened in
the Workspace by double-clicking them in the Project Navigator.
NOTEThe “connect” UTMs are used to control the switch matrix.
Return to Section Topics List4200-904-01 Rev. E / June 2008
Line 1 — Parameter value 6 selects the Learn control mode. Assumes that the probe list is
maintained by the prober controller software.
Lines 2 and 3 — These parameters (along with the units setting in Line 6) input a die size
of 22mm x 22mm.
Lines 4 and 5 — These parameters input the initial prober position as the 0, 0 coordinates.
Line 6 — Parameter value 1 sets units for die size (lines 2 and 3) to metric.
Table 3-5
“probesubsites” test descriptions
“probesubsites”
Project Test Description
InitializationSteps
prober-initInitializes the prober driver (see Fig
Subsite1
4terminal-n-fet
connect
vds-id-1x
3terminal-npn-bjt
connect
vce-ic-1x
probe-ss-move
Subsite2
4terminal-n-fet
connect
vds-id-2x
3terminal-npn-bjt
connect
vce-ic-2x
probe-ss-move
TerminationSteps
prober-separate
prober-prompt
Connects the SMUs to the probes for the N-channel MOSFET (see Fig
Generates a family of curves (ID vs. VD) for the MOSFET.
Connects the SMUs to the probes for the NPN transistor (see Fi
Generates a collector family of curves (IC vs. VC) for the transistor.
Moves prober to ne
Connects the SMUs to the probes for the N-channel MOSFET (see Fig
Generates a family of curves (ID vs. VD) for the MOSFET.
Connects the SMUs to the probes for the NPN transistor (see Fi
Generates a collector family of curves (IC vs. VC) for the transistor.
Moves prober to the first subsite of the next site.
The following steps occur after all three sites are tested:
Separates the prober pins from the wafer (see Figu
Displays a pop-up window indicating that testing is finished (see Figure 3-50).
xt subsite.
ure 3-46).
ure 3-47).
gure 3-48).
ure 3-47).
gure 3-48).
re 3-49).
Figure 3-46
prober-init
4200-904-01 Rev. E / June 2008Return to Section Topics List
1.Manually align the prober to test Subsite 1 of Site 1
. Make sure the prober pins are making
contact with the wafer probe pads.
2.In the Project Navigator, click “probesubsites” in the KITE Project Navigator to select the
project.
3.Click the green Run button to execute the test sequence.
NOTEBecause a manual probe station is being used, the prober will not actually move when the
prober control UTMs are executed. However, a pop-up dialog window will appear
instructing you to move the probes to the next subsite in the test sequence.
The test sequence is shown in Fig
for Subsite 1 and Subsite 2 are performed at Site 1.
ure 3-51. After the prober is initialized by “prober-init”, the tests
The last test for Site 1 (“probe-ss-move”)
moves the prober to Site 2 where the subsite tests are repeated.
After all five sites are tested, the prober pins separate from the wafer (prober-separate), and a
dialog window
Click OK to c
(prober-prompt) will alert that the test sequence is finished (see Figure 3-50B).
ontinue.
Figure 3-51
Test sequence
Return to Section Topics List4200-904-01 Rev. E / June 2008
Since five sites were tested, there will be five sets of test data; one for each site. Remember, a test
is opened by double-clicking it in the Project Navigator. Test data is viewed by clicking the Graph
or Sheet tab for the test.
When you double-click a test to open it, its test da
ta corresponds to the site number displayed by
the Site Navigator at the top of the Project Navigator. As shown in Figure 3-52, click the up or
down arrow to change the site number. For example, to view test data for Site 2, set the Site
Naviga
tor to Site 2 and double-click the desired test.
Figure 3-52
Site Navigator
The title bar at the top of the KITE p
Figure 3-53, test “vce-ic-2x” for Site 2 is being disp
anel indicates which test is presently being displayed. In
layed. The unique identifier (UID) number
distinguishes this test from any other test having the same name.
Figure 3-53
KITE title bar
Running individual plans or tests
You can run any Subsite Plan, Device Plan, or test in the project. The test sequence will stop after
the plan or test is finished. The following steps show how to run the “3terminal-npn-bjt” Device
Plan for Subsite 2 of Site 2:
1.Manually position the prober to test Subsite 2
making contact with the subsite pads.
2.Set the Site Navigator to Site 2.
3.In the Project Navigator, click “3terminal-npn-bjt” for Subsite2 to select the Device Plan.
4.Click the green Run button to start the test sequence.
4200-904-01 Rev. E / June 2008Return to Section Topics List
of Site 2. Make sure the prober pins are
Pulse Applications
Section Topics List
Charge Pumping, page 4-2
CP Procedure, page 4-2
Charge pumping UTM descriptions, page 4-6
amplsweep, page 4-6
basesweep, page 4-8
FallTimeLinearSweep, page 4-9
FreqFactorSweep, page 4-10
FreqLinearSweep, page 4-12
RiseTimeLinearSweep, page 4-13
Pulse IV, page 4-15
Introduction (PIV-A and PIV-Q), page 4-15
PIV-A test connections, page 4-17
Using the PulseIV-Complete project for the first time, page 4-24
Pulse IV UTM descriptions, page 4-36
cal_pulseiv, page 4-36
vdsid_pulseiv, page 4-37
vgsid_pulseiv, page 4-47
scopeshot_pulseiv, page 4-51
vdsid_pulseiv_demo, page 4-53
vgsid_pulseiv_demo, page 4-53
scopeshot_pulseiv_demo, page 4-53
Slow single pulse charge trapping high K gate stack, page 4-54
Charge trapping procedure, page 4-55
Charge Trapping UTM descriptions, page 4-58
chargetrapping_single_pulse_slow, page 4-58
AC stress for WLR, page 4-61
Q-Point Pulse IV – Model 4200-PIV-Q, page 4-64
PIV-Q Test Procedure, page 4-65
Interconnect Assembly Procedure, page 4-66
Using the Model 4200 Project QPulseIV-Complete for the first time, page 4-70
Running AutocalScope, page 4-71
Running CableCompensation, page 4-71
PIV-Q user libraries, page 4-77
Pulse adapters, cables, hardware and PCU, page 4-118
4
4-2Pulse Applications4200-SCS Applications Manual
Flash Memory Testing, page 4-119
Introduction, page 4-119
Theory of operation, page 4-119
FLASH Connections, page 4-132
Flash Projects, page 4-140
There are many possible applications for using pulse source and measure with DC source and
measure. This section contains the following:
•Charge pumping for interface characterization for CMOS (requires one channel of the pulse
g
enerator card and one Model 4200 SMU)
•Pulse IV to eliminate charge trapping or self-heating effects in new CMOS material and
structur
•Slow Single Pulse Charge Trapping for high K
package)
•AC stress for WLR (requires pulse generator ca
switch matrix and RBTs)
•The Model 4200-PIV-Q package provides q-point pulse IV testing for higher power
comp
duty cycle pulse IV testing.
e technologies (requires full 4200-PIV package)
gate stack structures (requires PIV-A
rd and Model 4200 SMUs, and optionally a
ound semiconductor or LDMOS RF transistors, or any device may benefit from low
NOTEThe various adapters, cables and hardware used for pulsing are shown in Figure 4-50
(located at the end of this section).
Charge Pumping
Charge Pumping (CP) is a useful technique for understanding gate stack behavior, that is
increasingly important as high κ films become more commonly used for transistor gates. CP
racterizes interface and charge-trapping phenomena. The change in the CP results can be
cha
used to determine the amount of degradation caused by typical reliability test methods, employing
either DC or pulsed stress: hot carrier injection (HCI), negative bias temperature instability (NBTI),
and time dependent dielectric breakdown (TDDB).
Pulsed voltage provides a key capability for investigating inherent material, interface, and
properties of high κ films, and devices based on these new films
simultaneously measuring the DC current is the basis for charge pumping, that is valuable for
measuring inherent charge trapping. Used in conjunction with DC or pulsed stress, CP can also
study charge trapping, as well as new charge creation on the high κ-Si interface and within the
igh κ film. Pulsed stress also provides a stress me
h
the in-circuit devices, that is useful for various device reliability tests, including NBTI, TDDB, and
HCI. In addition, pulsed stress provides insight into device reliability behaviors not available using
DC stress. Pulsed stress complements traditional DC techniques to provide a better understanding
of device reliability behavior.
This application demonstrates CMOS charge pum
schematic in Figure 4-1 shows source and drain of the transistor connected to ground, while the
gate is pulsed with fixed frequency and amplitude. The body is connected to ground using a
urce-Measure Unit (SMU), that is used to measure the current through the gate (I
So
reliability
. Pulsing a voltage while
thod that better mimics actual stresses seen by
ping for interface characterization. The
).
CP
NOTEAlthough the pulse train must be applied to the DUT before the SMU current
measurement begins, there is no strict timing requirement between the pulse applied to
DUT and the corresponding SMU current measure. An oscilloscope may be used to
monitor the pulse characteristics for initial setup and troubleshooting, but is not used for
pulse measurement during the test.
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualPulse Applications4-3
4200-PG2
Measure I
Pulse Generator
V
g
Output
4200-SMU (1)
Source
Drain
Substrate
Gate
CP Procedure
1.Connect DUT (transistor) as shown in Figure 4-2. Make sure source and drain are
connected to ground.
2.Choose desired test method (Figure 4-3). For a brief overview of the test methods
contained in this manual, refer to . To go directly to a specific charge pumping UTM, see the
list of test methods and page numbers below:
NOTEEach CP test method is in a separate UTM (User Test Module).
• Amplitude sweep — see
•
Base voltage sweep — see
• Fall time sweep — see
• Frequency factor sweep — see
• Frequency linear sweep — see
• Rise time linear sweep — see
3.Choose voltage (V) steps and current (I) measurement parameters.
4.The UTM then pulses gate with a train of pulses at a fixed base/amplitude.
5.While pulsing, the UTM will measure DC substrate current with SMU.
6.Once one measurement is finished, change pulse characteristics and re-measure again.
Pulse parameters are changed based on type of voltage sweep. See upper half of
Figure 4-3 for type of sweeps. Both plots in Figure 4-3 (base voltage sweep and amplitude
sweep) show ICP (measured charge pumping current) vs. pulse voltage.
Figure 4-1
Charge Pumping—hardware setup block diagram
NOTEThe pulse width is not explicitly set, but is derived from the frequency and the duty cycle.
Table 4-1
Key pulse generator parameters
ParametersRange/Specification
Variable rise time and fall time100ns to 500us
Duty cycle0.01% to 99%, default 50%
Frequency100 Hz to 12.5 MHz
Pulse amplitude-5 to +5V
1
Base + Amplitude must not exceed -5V or +5V absolute.
Return to Section Topics List4200-904-01 Rev. E / June 2008
4-4Pulse Applications4200-SCS Applications Manual
4205
PG2
Model 4200-SCS
InstrumentSlots
4200
SCP2HR
V
G
INSTRUMENTS
SLOT8SLOT7SLOT6SLOT5SLOT4SLOT3SLOT2SLOT
1
4200
SMU
SENSE LO
SENSE
FORCE
PA CNTRL
KEITHLEY
4200
SMU
SENSE LO
SENSE
FORCE
PA CNTRL
KEITHLEY
4210
SMU
SENSE LO
SENSE
FORCE
PA CNTRL
KEITHLEY
4210
SMU
SENSE LO
SENSE
FORCE
PA CNTRL
KEITHLEY
KEITHLEY
Channel 1
Channel 2
Ext
Trg
Ext
Clk
NOTE Use torque wrench to tighten SMA
connections to 8 inch-lbs.
Model 4205-PG2
Model 4200-SMU (1)
4200-MTRX-X
Cable (2m, 6ft)
Substrate
Pulse
Output
DC Output
Source
Gate
Drain
Adapter (if required)
Triax (female) to BNC (male)
Adapter (if required)
BNC (female) to SMA (male)
CHANNEL 1
KEITHLEY
TRIGGER
OUT
CHANNEL 2
TRIGGER
IN
White SMA Cable (2m, 6ft)
(male-to-male)
1.8E–15
1.6E–15
1.4E–15
1.2E–15
1.0E–15
800.0E–18
600.0E–18
400.0E–18
200.0E–18
0.0E+0
I
CP
Base V
–2.0E+0–1.0E+00.0E+01.0E+0
80.0E–12
70.0 E–12
60.0E–12
50.0 E–12
40.0E–12
30.0 E–12
20.0 E–12
10.0 E–12
0.0E+0
–10.0E–12
I
CP
Amplitude V
1.0E+02.0E+03.0E+0
V
t
V
fb
V
t
V
fb
Amplitude SweepBase Level Voltage Sweep
Table 4-1 (cont.)
Key pulse generator parameters
ParametersRange/Specification
Base voltage +/- 5V
1
Load impedance 50Ω or 1MΩ.
1
Base + Amplitude must not exceed -5V or +5V absolute.
Figure 4-2
Charge pumping — hardware connection
Figure 4-3
Two types of sweeps for charge pumping
7.Outputs curves:
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualPulse Applications4-5
N
it
I
CP
qfA
---------=
D
it
I
CP
qAfΔE
-----------------=
-1.0-0.50.00.51.01.5
nFET W/L=10/1 m
V
base_fixed
= -1.0V
V
peak
[V]
1MHz N2O 800C
100kHz N2O 800C
10kHz N2O 800C
-1.4-1.2-1.0-0.8-0.6-0.4-0.20.00.2
0.0
0.5
1.0
1.5
2.0
2.5
V
peak_fixed
= 1.2V
nFET W/L=10/1 m
1 MHz
100 kHz
10 kHz
V
base
[V]
Amplitude Peak [V]Base Voltage[V]
10
9
10
10
10
11
a. Plot ICP vs swept parameter (e.g., amplitude, base, frequency, rise time).
b. An example of the calculated parameters as shown in Figure 4-4:
Interface Trap Charge
where:
Icp = charge pumping current measured by the SMU
q = elemental charge of an electron
f = frequency of the pulses
A = area of the capacitor
c.Another useful calculated parameter:
Interface Trap Density
where:
Icp = charge pumping current measured by the SMU
q = elemental charge of an electron
A = area of the capacitor
f = frequency of the pulses
Δ
E = difference between the inversion Fermi level and the accumulation Fermi level
Figure 4-4
Example data plots for N
it
Return to Section Topics List4200-904-01 Rev. E / June 2008
4-6Pulse Applications4200-SCS Applications Manual
Charge pumping UTM descriptions
The chargepumping user library contains modules required to characterize interface and chargetrapping phenomena. The modules contained in the charge pumping user library are listed in
Tab le 4-2 with detailed information following the table.
Table 4-2
Charge pumping UTMs
User ModuleDescription
Performs and graphs a linear sweep of the pulse amplitude.
Performs and graphs a linear sweep of the pulse base or offset.
Performs and graphs a linear sweep of the falling transition time
of the pu
Performs and graphs a log or multiply frequency sweep of the
pulse.
Performs and graphs a linear sweep of the frequency of the
pulse.
Performs and graphs a linear sweep of the rising transition time
of the pulse,
lse.
amplsweep
DescriptionThe amplsweep is a charge pumping routine that performs a linear sweep of the
ConnectionThis procedure requires connection of the appropriate pulse channel to the gate of
pulse amplitude, graphing the resulting charge pumping current measured by a
4200 SMU. This routine controls a single channel of the pulse generator card as
well as a 4200 SMU.
Make sure to set the appropriate values
for the charge pumping parameters
(Table 4-3). Table 4-4 contains the routines output parameters. The rise time and
fall time parameters are the full transition times (0–100%), not the 10%–90% times.
For the 5V range of the pulse generator card, the 10–90% rise times are about 20%
less than the full 0–100% transition times that are used to program the pulse.
the DUT (device under test) and the substrate/well to the 4200 SMU Force. The
other DUT pins should be connected to ground. For detailed connection
information, refer to the .
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualPulse Applications4-7
Table 4-3
Inputs for amplsweep
InputTypeDescription
VPUIDchar *The instrument ID. This should be set to VPU1 for 4200 systems with a
single pulse generator card.
PulseChanintThe pulse generator card output channel, 1 or 2.
SubSMUchar *The SMU for the substrate/well. This can be SMU1 up to the maximum
number of SMUs in the system.
StartVampldoubleStarting pulse amplitude (V). This can be set from -80V to +80V.
StopVampldoubleStopping amplitude voltage for the sweep (V). This can be set from -80V
to +80V.
StepVampldoubleStep size for the amplitude sweep (V). This can be set from -80V to
+80V.
PulseOffsetdoubleOffset, or base, of the pulse (V). This can be set from -40V to +40V
(inclusive of amplitude).
PulseRiseTimedoubleTransition rise time for the pulse. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFallTimedoubleTransition fall time for the pulse. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFrequencydoublePulse frequency. This can be set from 1Hz to 20Mhz.
DutyCyclePercentdoubleDuty Cycle percent. This can be set from 0.001% to 99.9%.
PulseLoaddoubleDUT load or impedance (ohm). This can be set from 50 to 1E6. This
value is used to adjust the pulse amplitude sourced by the pulse
generator card to compensate for non-50 ohm termination. For
example, setting the load = 1E6 means the pulse generator card will
output half the voltage compared to load = 50.
PulseRangedoubleSelects pulse range. Set this value to 5 for high speed or to 20 for high
voltage
NPLCintIntegration time in power line cycles. This can be set from 0.01 to 10.
SMUCompliancedoubleCurrent limit for the SMU. Set from 10e-12 to 100e-3.
PulseAmpl_size
Icp_size
Qcp_size
LowestIRangedoubleLowest current measure range used during limited auto range. This can
doubleSet to a value that is at least equal to the number of steps in the sweep.
All _size values must be equal to each other.
be set from 10e-12 to 100e-3
Table 4-4
Outputs for amplsweep
OutputTypeDescription
PulseAmpldouble * The array of pulse amplitudes used.
Icpdouble *The array of current values measured by the SMU.
Qcpdouble * The array charge values calculated from the Icp values, where:
Qcp = Icp/(Frequency)
Return to Section Topics List4200-904-01 Rev. E / June 2008
4-8Pulse Applications4200-SCS Applications Manual
basesweep
DescriptionThe basesweep is a charge pumping routine to perform a linear sweep of the
pulse base or offset, graphing the resulting charge pumping current measured by
a 4200 SMU. This routine controls a single channel of the pulse generator card as
well as a 4200 SMU.
Make sure to set the appropriate values
(Table 4-5). Table 4-6 contains the routines output parameters. The rise time and
fall time parameters are the full transition times (0–100%), not the 10%–90% times.
For the 5V range of the pulse generator card the 10–90% rise times are about 20%
less than the full 0–100% transition times that are used to program the pulse.
ConnectionUsing this routine requires connection of the appropriate pulse channel to the gate
of the DUT (device under test) and the substrate or well to the 4200 SMU Force.
The other DUT pins should be connected to ground. For detailed connection
information, refer to
Table 4-5
Inputs for basesweep
InputTypeDescription
VPUIDchar *The instrument ID. This should be set to VPU1 for 4200 systems with a
single pulse generator card.
PulseChanintThe pulse generator card output channel, 1 or 2.
SubSMUchar *The SMU for the substrate/well. This can be SMU1 up to the maximum
number of SMUs in the system.
StartVBasedoubleStarting pulse base (V). This can be set from -40 to +40V.
StepVBasedoubleStep size for the base sweep (V). This can be set from -40 to +40V.
StopVBasedoubleStopping amplitude voltage for the sweep (V). This can be set from -40
to +40V.
PulseAmplitudedoubleThis sets pulse amplitude (V) from -80 to +80V (inclusive of base).
PulseRiseTimedoubleTransition rise time for the pulse. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFallTimedoubleTransition fall time for the pulse. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFrequencydoublePulse frequency. This can be set from 1Hz to 20Mhz.
DutyCyclePercentdoubleDuty Cycle percent. This can be set from 0.001% to 99.9%.
PulseLoaddoubleDUT load or impedance (ohm). This can be set from 50 to 1E-6. This
value is used to adjust the pulse amplitude sourced by the pulse
generator card to compensate for non-50 ohm termination. For
example, setting the load = 1E6 means the pulse generator card will
output half the voltage compared to load = 50.
PulseRangedoubleSelects pulse range. Set this value to 5 for high speed or to 20 for high
voltage.
NPLCdoubleIntegration time in power line cycles. This can be set from 0.01 to 10.
SMUCompliancedoubleCurrent limit for the SMU. Set from 10e-12 to 100e-3.
BaseV_size
Icp_size
Qcp_size
LowestIRangedoubleLowest current measure range used during limited auto range. This can
intSet to a value that is at least equal to the number of steps in the sweep.
All _size values must be equal to each other.
be set from 10e-12 to 100e-3.
for the charge pumping parameters
4200-904-01 Rev. E / June 2008Return to Section Topics List
4200-SCS Applications ManualPulse Applications4-9
Table 4-6
Outputs for basesweep
OutputTypeDescription
BaseVdouble * The array of pulse base voltages
Icpdouble *The array of current values measured by the SMU.
Qcpdouble * The array charge values calculated from the Icp values, where:
Qcp = Icp/(Frequency)
FallTimeLinearSweep
DescriptionThe FallTimeLinearSweep is a charge pumping routine that performs a linear
sweep of the falling transition time of the pulse, graphing the resulting charge
pumping current measured by a 4200 SMU. This routine controls a single channel
of the pulse generator card as well as a 4200 SMU.
Make sure to set the appropriate values
(Table 4-7). Table 4-8 contains the routines output parameters. The rise time and
fall time parameters are the full transition times (0–100%), not the 10%–90% times.
For the 5V range of the pulse generator card the 10–90% rise times are about 20%
less than the full 0–100% transition times that are used to program the pulse.
for the charge pumping parameters
ConnectionUsing this routine requires connection of the appropriate pulse channel to the gate
of the device under test (DUT) and the substrate or well to the 4200 SMU Force.
The other DUT pins should be connected to ground. For detailed connection
information, refer to the .
Table 4-7
Inputs for FallTimeLinearSweep
InputTypeDescription
VPUIDchar * The instrument ID. This should be set to VPU1 for 4200 systems with a
single pulse generator card.
PulseChanintThe pulse generator card channel, 1 or 2.
SubSMUcharThe SMU number. This can be SMU1 to the maximum number of SMUs
in the system.
StartFallTimedoubleStarting transition fall time for sweep (s). This can be set from 10E-9
(10ns) to 1 second with 10ns resolution. Note that this value programs
the full transition time (0–100%) not 10–90%.
StopFallTimedoubleStopping transition fall time for sweep (s). This can be set from 10E-9
(10ns) to 1 second with 10ns resolution. Note that this value programs
the full transition time (0–100%) not 10–90%.
StepFallTimedoubleStepsize for transition fall time sweep (s). This can be set from 10E-9
(10ns) to 1 second with 10ns resolution. Note that this value programs
the full transition time (0–100%) not 10–90%.
PulseRiseTimedouble Transition rise time for sweep. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseAmplitude doubleAmplitude of pulse (V). This can be set from -40V to +40V (inclusive of
offset).
PulseFrequency double Pulse frequency. This can be set from 1 Hz to 20 Mhz.
PulseOffset doubleOffset, or base, of the pulse (V). This can be set from -40V to +40V
(inclusive of amplitude).
DutyCyclePercent doubleDuty Cycle percent. This can be set from 0.001% to 99.9%.
Return to Section Topics List4200-904-01 Rev. E / June 2008
PulseLoad doubleDUT load or impedance (ohm). This can be set from 50 to 1E6. This
value is used to adjust the pulse amplitude sourced by the pulse
generator card to compensate for non-50 ohm termination. For
example, setting the load = 1E6 means the pulse generator card will
output half the voltage compared to load = 50.
PulseRangedoubleSelects pulse range. Set this value to 5 for high speed or to 20 for high
voltage
NPLC intIntegration time in power line cycles. This can be set from 0.01 to 10.
SMUCompliancedoubleCurrent limit for the SMU. Set from 10e-12 to 100e-3.
FallTimeSize
Icp_size
Qcp_size
LowestIRangedoubleLowest current measure range used during limited auto range. This can
intSet to a value that is at least equal to the number of steps in the sweep.
All _size values must be equal to each other.
be set from 10e-12 to 100e-3
Table 4-8
Outputs for FallTimeLinearSweep
OutputTypeDescription
FallTransTimedouble * The array of fall transition times used.
Icpdouble *The array of current values measured by the SMU.
Qcpdouble * The array charge values calculated from the Icp values, where:
FreqFactorSweep
DescriptionThe FreqFactorSweep is a charge pumping routine that performs a log or multiply
ConnectionUsing this routine requires connection of the appropriate pulse channel to the gate
Qcp = Icp/(Frequency)
frequency sweep of the pulse, graphing the resulting charge pumping current
measured by a 4200 SMU. This routine controls a single channel of the pulse
generator card as well as a 4200 SMU.
Make sure to set the appropriate values
for the charge pumping parameters
(Table 4-9). Table 4-10 contains the routines output parameters. The rise time and
fall time parameters are the full transition times (0–100%), not the 10%-90% times.
For the 5 V range of the pulse generator card the 10–90% rise times are about 20%
less than the full 0–100% transition times that are used to program the pulse.
of the device under test (DUT) and the substrate or well to the 4200 SMU Force.
The other DUT pins should be connected to ground. For detailed connection
information, refer to .
4200-904-01 Rev. E / June 2008Return to Section Topics List
VPUIDchar *The instrument ID. This should be set to VPU1 for 4200 systems with a
single pulse generator card.
PulseChanintThe pulse generator card channel, 1 or 2.
SubSMUcharThe SMU number. This can be SMU1 to the maximum number of SMUs
in the system.
FreqMultFactordoubleMultiplier factor to control step size. Next Freq = Previous frequency *
FreqMultFactor. Use Factors > 1 for sweeping to higher frequencies.
Use Factors < 1 for sweeping to lower frequencies.
NumPointsintNumber of points in the frequency sweep.
PulseRiseTimedoubleTransition rise time for sweep. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFallTimedoubleTransition fall time for the pulse. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseAmplitudedoubleAmplitude of pulse (V). This can be set from -80 to +80V (inclusive of
offset).
PulseFrequencydoublePulse frequency. This can be set from 1Hz to 20Mhz.
PulseOffsetdoubleOffset, or base, of the pulse (V). This can be set from -40V to +40V
(inclusive of amplitude).
DutyCyclePercentdoubleDuty Cycle percent. This can be set from 0.001% to 99.9%.
PulseLoaddoubleDUT load or impedance (ohm). This can be set from 50 to 1E6. This
value is used to adjust the pulse amplitude sourced by the pulse
generator card to compensate for non-50 ohm termination. For
example, setting the load = 1E6 means the pulse generator card will
output half the voltage compared to load = 50.
PulseRangedoubleSelects pulse range. Set this value to 5 for high speed or to 20 for high
voltage
NPLCintIntegration time in power line cycles. This can be set from 1 to 10.
SMUCompliancedoubleCurrent limit for the SMU. Set from 10e-12 to 100e-3.
Frequency_size
Qcp_size
Icp_size
LowestIRangedoubleLowest current measure range used during limited auto range. This can
(int)Set to a value that is at least equal to the number of steps in the sweep.
All _size values must be equal to each other.
be set from 10e-12 to 100e-3
Table 4-10
Outputs for FreqFactorSweep
OutputTypeDescription
Frequencydouble * The array of frequencies used.
Icpdouble *The array of current values measured by the SMU.
Qcpdouble * The array charge values calculated from the Icp values, where:
Qcp = Icp/(Frequency)
Return to Section Topics List4200-904-01 Rev. E / June 2008
DescriptionThe FreqLinearSweep is a Charge Pumping routine to perform a linear sweep of
the pulse frequency, graphing the resulting charge pumping current measured by
a 4200 SMU. This routine controls a single channel of the pulse generator card as
well as a 4200 SMU.
Make sure to set the appropriate values
(Table 4-11). Table 4-12 contains the routines output parameters. Note that the rise
time and fall time parameters are the full transition times (0–100%), not the 10%–
90% times. For the 5 V range of the pulse generator card the 10–90% rise times
are about 20% less than the full 0–100% transition times that are used to program
the pulse.
ConnectionUsing this routine requires connection of the appropriate pulse channel to the gate
of the device under test (DUT) and the substrate or well to the 4200 SMU Force.
The other DUT pins should be connected to ground. For detailed connection
information, refer to the .
Table 4-11
Inputs for FreqLinearSweep
InputTypeDescription
InstIdStrchar *The instrument ID. This should be set to VPU1 for 4200 systems with a
single pulse generator card.
PulseChanintThe pulse generator card output channel, 1 or 2.
SubSMUcharThe SMU number. This can be SMU1 to the maximum number of SMUs
in the system.
StartFreq doubleStarting pulse frequency for sweep (Hz). This can be set from 1 to 20
MHz (20E6).
StopFreq doubleStopping pulse frequency for sweep (Hz). This can be set from 1 to 20
MHz (20E6).
StepFreq doublePulse frequency step size for sweep (Hz). This can be set from 1 to 20
MHz (20E6).
PulseRiseTime doubleTransition rise time for sweep. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseFallTime doubleTransition fall time for sweep. This can be set from 10E-9 (10ns) to 1
second with 10ns resolution. Note that this value programs the full
transition time (0–100%) not 10–90%.
PulseAmplitude doubleAmplitude of pulse (V). This can be set from -80V to +80V (inclusive of
offset).
Frequency doublePulse frequency. This can be set from 1Hz to 10Mhz.
PulseOffset doubleOffset, or base, of the pulse (V). This can be set from -40V to +40V
(inclusive of amplitude).
DutyCyclePercent doubleDuty Cycle percent. This can be set from 0.001% to 99.9%.
PulseLoaddoubleDUT load or impedance (ohm). This can be set from 50 to 1E6. This
value is used to adjust the pulse amplitude sourced by the pulse
generator card to compensate for non-50 ohm termination. For
example, setting the load = 1E6 means the pulse generator card will
output half the voltage compared to load = 50.
PulseRangedoubleSelects pulse range. Set this value to 5 for high speed or to 20 for high
voltage
NPLCintIntegration time in power line cycles. This can be set from 0.01 to 10.
SMUCompliancedoubleCurrent limit for the SMU. Set from 10e-12 to 100e-3.
for the charge pumping parameters
4200-904-01 Rev. E / June 2008Return to Section Topics List
LowestIRangedoubleLowest current measure range used during limited auto range. This can
intSet to a value that is at least equal to the number of steps in the sweep.
All _size values must be equal to each other.
be set from 10e-12 to 100e-3
Table 4-12
Outputs for FreqFactorSweep
OutputTypeDescription
Frequencydouble * The array of frequencies used.
Icpdouble *The array of current values measured by the SMU.
Qcpdouble * The array charge values calculated from the Icp values, where:
Qcp = Icp/(Frequency)
RiseTimeLinearSweep
DescriptionThe RiseTimeLinearSweep is a charge pumping routine to perform a linear sweep
of the rising transition time of the pulse, graphing the resulting charge pumping
current measured by a 4200 SMU. This routine controls a single channel of the
pulse generator card as well as a 4200 SMU.
Make sure to set the appropriate value for the charge pumping parameters
able 4-13). Table 4-14 contains the routines output parameters. The rise time and
(T
fall time parameters are the full transition times (0–100%), not the 10%–90% times.
For the 5V range of the pulse generator card the 10–90% rise times are about 20%
less than the full 0–100% transition times that are used to program the pulse.
ConnectionUsing this routine requires connection of the appropriate pulse channel to the gate
of the device under test (DUT) and the substrate or well to the 4200 SMU Force.
The other DUT pins should be connected to ground. For detailed connection
information, refer to the .
Return to Section Topics List4200-904-01 Rev. E / June 2008
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