Teccor Electronics Thyristor Technical data

Thyristor

Product Catalog

Teccor Electronics

1800 Hurd Drive

Irving, Texas 75038

United States of America

Phone: +1 972-580-7777

Fax: +1 972-550-1309

Website: http://www.teccor.com

E-mail: power.techsales@teccor.com

Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devices described in this publication. Furthermore, no license of any patent rights is implied or given to any purchaser.

Teccor Electronics is the proprietor of the QUADRAC® trademark. is a registered trademark of Underwriters Laboratories, Inc. All other brand names may be trademarks of their respective companies. To conserve space in this catalog, the trademark sign (®) is omitted.

Contents

Product Selection Guide

Product Descriptions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - vi Circuit Requirement Diagram - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - vii Product Packages - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - viii Description of Part Numbers- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - x Quality and Reliability Assurance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -xii Standard Terms and Conditions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - xiv

Data Sheets

V-I Characteristics of Thyristor Devices - - - - - - - - - - - - - - - - - - - - - - - - E0-2 Electrical Parameter Terminology - - - - - - - - - - - - - - - - - - - - - - - - - - - - E0-3 Electrical Specifications

Sensitive Triacs- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E1 Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E2 QUADRACs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E3 Alternistor Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E4 Sensitive SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E5 SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E6 Rectifiers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E7 Diacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E8 SIDAC - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E9

Mechanical Specifications

Package Dimensions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M1 Lead Form Dimensions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M2 Packing Options - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M3

Application Notes

Fundamental Characteristics of Thyristors - - - - - - - - - - - - - - - - - - - AN1001 Gating, Latching, and Holding of SCRs and Triacs - - - - - - - - - - - - - AN1002 Phase Control Using Thyristors- - - - - - - - - - - - - - - - - - - - - - - - - - - AN1003 Mounting and Handling of Semiconductor Devices - - - - - - - - - - - - - AN1004 Surface Mount Soldering Recommendations - - - - - - - - - - - - - - - - - AN1005 Testing Teccor Semiconductor Devices

Using Curve Tracers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - AN1006 Thyristors Used As AC Static Switches and Relays - - - - - - - - - - - - AN1007 Explanation of Maximum Ratings and Characteristics for Thyristors - AN1008 Miscellaneous Design Tips and Facts - - - - - - - - - - - - - - - - - - - - - - AN1009 Thyristors for Ignition of Fluorescent Lamps - - - - - - - - - - - - - - - - - - AN1010

Appendix

Cross Reference Guide - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A1 Part Numbers Index- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A27

Product Selection Guide

Product Descriptions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 2 Circuit Requirement Diagram - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 3 Product Packages - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 4 Description of Part Numbers- - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 6 Quality and Reliability Assurance - - - - - - - - - - - - - - - - - - - - - - - - - P 8 Standard Terms and Conditions - - - - - - - - - - - - - - - - - - - - - - - - - P 10

Product Descriptions

Thyristors

A thyristor is any semiconductor switch with a bi-stable action depending on p-n-p-n regenerative feedback. Thyristors are normally two- or three-terminal devices for either unidirectional or bidirectional circuit configurations. Thyristors can have many forms, but they have certain commonalities. All thyristors are solid state switches that are normally open circuits (very high impedance), capable of withstanding rated blocking/off-state voltage until triggered to on state. When triggered to on state, thyristors become a low-impedance current path until principle current either stops or drops below a minimum holding level. After a thyristor is triggered to on-state condition, the trigger current can be removed without turning off the device. Thyristors are used to control the flow of electrical currents in applications including:

• Home appliances (lighting, heating, temperature control, alarm activation, fan speed)

• Electrical tools (for controlled actions such as motor speed, stapling event, battery charging)

• Outdoor equipment (water sprinklers, gas engine ignition, electronic displays, area lighting, sports equipment, physical fitness)

Sensitive Triacs

Teccor's sensitive gate triacs are AC bidirectional silicon switches that provide guaranteed gate trigger current levels in Quadrants I, II, III, and IV. Interfacing to microprocessors or other equipment with single polarity gate triggering is made possible with sensitive gate triacs. Gate triggering currents of 3 mA, 5 mA, 10 mA, or 20 mA may be specified.

Sensitive gate triacs are capable of controlling AC load currents from 0.8 A to 8 A rms and can withstand operating voltages from 200 V to 600 V.

Triacs

Teccor's triac products are bidirectional AC switches, capable of controlling loads from 0.8 A to 35 A rms with 10 mA, 25 mA, and 50 mA I

Triacs are useful in full-wave AC applications to control AC power either through full-cycle switching or phase control of current to the load element. These triacs are rated to block voltage in the “OFF” condition from 200 V minimum with selected products capable of 1000 V operation. Typical applications include motor speed controls, heater controls, and incandescent light controls.

in operating Quadrants I, II and III.

GT

Quadrac

Quadrac devices, originally developed by Teccor, are triacs and alternistor triacs with a diac trigger mounted inside the same package. These devices save the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac.

The Quadrac is offered in capacities from 4 A to 15 A rms and voltages from 200 V ac to 600 V ac.

Alternistor Triacs

The Teccor alternistor is specifically designed for applications required to switch highly inductive loads. The design of this special chip effectively offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back).

This new chip construction provides the equivalent of two electrically-separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.

Teccor manufactures 6 A to 40 A alternistors with blocking voltage rating from 200 V to 1000 V. Alternistors are offered in TO-220, TO-218, and TO-218X packages with isolated and non-isolated versions.

Sensitive SCRs

Teccor's sensitive gate SCRs are silicon-controlled rectifiers representing the best in design, performance, and packaging techniques for low- and medium-current applications.

Anode currents of 0.8 A to 10 A rms can be controlled by sensitive gate SCRs with gate drive currents ranging from 12 µA to 500 µA. Sensitive gate SCRs are ideally suited for interfacing to integrated circuits or in applications where high current load requirements and limited gate drive current capabilities exist. Examples include ignition circuits, motor controls, and DC latching for alarms in smoke detectors. Sensitive gate SCRs are available in voltage ratings to 600 V ac.

SCRs

Teccor's SCR products are half-wave, silicon-controlled rectifiers that represent the state of the art in design and performance.

Load current capabilities range from 1 A to 70 A rms, and voltages from 200 V to 1000 V may be specified to meet a variety of application needs.

Because of its unidirectional switching capability, the SCR is used in circuits where high surge currents or latching action is required. It may also be used for half-wave-type circuits where gate-controlled rectification action is required. Applications include crowbars in power supplies, camera flash units, smoke alarms, motor controls, battery chargers, and engine ignition.

Surge current ratings are available from 30 A in the TO-92 packaging to 950 A in the TO-218X package.

Rectifiers

Teccor manufactures 15 A to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock requirements.

Diacs

Diacs are trigger devices used in phase control circuits to provide gate pulses to a triac or SCR. They are voltage-triggered bidirectional silicon devices housed in DO-35 glass axial lead packages and DO-214 surface mount packages.

Diac voltage selections from 27 V to 45 V provide trigger pulses closely matched in symmetry at the positive and negative breakover points to minimize DC component in the load circuit.

Some applications include gate triggers for light controls, dimmers, power pulse circuits, voltage references in AC power circuits, and triac triggers in motor speed controls.

Sidacs

Sidacs represent a unique set of thyristor qualities. The sidac is a bidirectional voltage triggered switch. Some characteristics of this device include a normal 95 V to 330 V switching point, negative resistance range, latching characteristics at turn-on, and a low onstate voltage drop.

One-cycle surge current capability up to 20 A makes the sidac an ideal product for dumping charged capacitors through an inductor in order to generate high-voltage pulses. Applications include light controls, high-pressure sodium lamp starters, power oscillators, and high-voltage power supplies.

Circuit Requirement Diagram

BILATERAL VOLTAGE

SWITCH

SIDAC *

GATE CURRENT

12-500 µA 10-50 mA

SCR *SCR (Sensitive) *

* For detailed information, see specific data sheet in product catalog.

RECTIFIER REVERSE BLOCKING

RECTIFIER *

QUADRAC *

THYRISTOR

DIAC TRIGGER DIRECT

OPTIONS

INTERNAL EXTERNAL

DIACS *

ALTERNISTOR TRIAC *

BIDIRECTIONAL

THYRISTOR

GATE CONTROL

(See Quadrant Chart on Data Sheet)

I I I I I I I I I I I I I V

GATE CURRENT

10-100 mA

TRIAC *

BILATERAL

VOLTAGE TRIGGER

DIAC *

QUADRANT OPERATION

GATE CURRENT

3-20 mA

SENSITIVE TRIAC *

Product Packages

Package Code

GY S C E L K J P

Isolated Mounting Tab

Product

Type

Sensitive

Triac

Quadrac

Alternistor

Sensitive

SCR

Rectifier

Current

(Amps)

0.8 ✔ ✔

1 ✔ ✔

4 ✔

6 ✔

8 ✔

0.8 ✔✔

1 ✔✔

4 ✔

6 ✔

8 ✔

10 ✔

15 ✔

25 ✔

35 ✔

4 ✔

6 ✔

8 ✔

10 ✔

15 ✔

6 ✔

8 ✔

10 ✔

12 ✔

16 ✔

25 ✔✔✔

30 ✔

35

40

0.8 ✔ ✔

1.5 ✔

4

6 ✔

8 ✔

10 ✔

1 ✔✔

6 ✔

8 ✔

10 ✔

12

15

16

20

25 ✔

35 ✔✔

40

55

65

70

15 ✔

20 ✔

25 ✔

DO-15 DO-35 DO-214 Compak TO-92 * TO-220 TO-218 TO-218X

Diac

Sidac

* No center lead on TO-92 Sidacs.

TO-3

Fastpak

✔✔

✔

✔✔

✔ ✔ ✔ *

Product Packages

Non-isolated Mounting Tab

FRMWDVN

Package Code

TO-202 TO-220 TO-218 TO-218X

✔ ✔ ✔ 4

✔ ✔✔ 4

✔✔ ✔ 6

✔✔ ✔ 8

✔✔ ✔ 10

✔ ✔ 15

✔ ✔ 25

✔ ✔✔✔ 6

✔ ✔✔✔ 8

✔ ✔ 10

✔ ✔ 12

✔ ✔ 16

✔ ✔ 25

✔ 35

✔ 0.8

✔ 1.5

✔ ✔ ✔ ✔ 4

✔ ✔ ✔ ✔ 6

✔ ✔ ✔ ✔ 8

✔ ✔ ✔ ✔ 10

✔ ✔✔ 6

✔✔ ✔✔ 8

✔✔ ✔✔ 10

✔✔✔12

✔ ✔ 16

✔ ✔ 25

✔ ✔ 40

✔✔✔ ✔55

✔ 70

✔

TO-252

D-Pak

✔ ✔ 6

✔ ✔ 8

TO-251

V-Pa k

TO-263

2

D

Pak

Current

(Amps)

0.8

1

0.8

1

35

4

6

8

10

15

30

40

1

15

20

35

65

15

20

25

Product

Typ e

Sensitive

Triac

Quadrac

Alternistor

Sensitive SCR

SCR

Rectifier

Diac

Sidac

Description of Part Numbers

Sensitive Triac

L

Device Type L = Sensitive Triac

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating X8 = 0.8 A N = 1 A 01 = 1 A 04 = 4 A 06 = 6 A 08 = 8 A

Package Type Blank =

Compak

D = TO-252 (Surface Mount) E = TO-92 (Isolated) F = TO-202 (Non-islolated) L = TO-220 (Isolated) V = TO-251 (Non-islolated)

(Surface Mount)

Quadrac

Q2004 L T 52

Device Type Q =

Quadrac

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating 04 = 4 A 06 = 6 A 08 = 8 A 10 = 10 A 15 = 15 A

20

04

F5

12

H

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

Lead Form Dimensions

3 = 3 mA (Q I, II, III, IV) 5 = 5 mA (Q I, II, III, IV)

TO-202 TO-220

TO-92

Gate Variations

6 = 5 mA (Q I, II, III) 6 = 10 mA (Q IV)

8 = 10 mA (Q I, II, III)

8 = 20 mA (Q IV)

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

Lead Form Dimensions

TO-220

Alternistor

Gate Variation

T = Internal Diac Trigger

Package Type

L = TO-220 (Isolated)

Triac and Alternistor

Q

20

Device Type Q = Triac or Alternistor

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating X8 = 0.8 A 01 = 1 A 04 = 4 A 06 = 6 A 08 = 8 A 10 = 10 A 12 = 12 A 15 = 15 A 25 = 25 A 30 = 30 A 35 = 35 A 40 = 40 A

Package Type D = TO-252 (Surface Mount) E = TO-92 (Isolated) F = TO-202 (Non-isolated) J = TO-218X (Isolated) K = TO-218 (Isolated) L = TO-220 (Isolated) N = TO-263 (Surface Mount) P =

Fastpak

(Isolated) R = TO-220 (Non-isolated) V = TO-251 (Non-isolated) W = TO-218X (Non-isolated)

04

X

F3

1

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

Lead Form Dimensions

DH3 and VH3 = 10mA (Q I, II, III)

H4 = 35 mA (Q I, II, III) *

H5 = 50 mA (Q I, II, III) *

6 = 80 mA (Q I, II, III) *

7 = 100 mA (Q I, II, III) *

* NOTE: Alternistor device; no Quadrant IV operation

TO-202 TO-220

TO-92

TO-218X

TO-218

Gate Variation

3 = 10 mA (Q I, II, III)

H3 = 20mA (Q I, II, III)

4 = 25 mA (Q I, II, III)

5 = 50 mA (Q I, II, III)

Sensitive SCR

20

06

FS2

21

X

Special Options

V = 4000 V Isolated

(TO-220 Package Only)

Lead Form Dimensions

Blank = Compak (Surface Mount)

D = TO-252 (Surface Mount)

F = TO-202 (Non-islolated)

V = TO-251 (Non-islolated)

TO-202 TO-220

Gate Variations

S1 = 50 µA S2 = 200 µA S3 = 500 µA

Package Type

L = TO-220 (Isolated)

Device Type TCR = TO-92 (Isolated) EC = TO-92 (Isolated) T = TO-202 (Non-isolated) 2N = JEDEC (Isolated)

Current Rating for TCR 22 = 1.5 A

Current Rating for EC 103 = 0.8 A

Current Rating for T 106 = 4 A (I 107 = 4 A (I

Current Rating for 2N 5xxx = 0.8 A

= 200 µA)

GT

= 500 µA)

GT

EC

103

D

75

1

Gate Current (for EC series only)

Voltage Rating for EC and T

Lead Form Dimensions

Voltage Rating for TCR

Voltage Rating for 2N

TO-92

TO-202

None = 200 µA

1 = 12 µA 2 = 50 µA

3 = 500 µA

-4 = 200 V

-6 = 400 V

-8 = 600 V

B = 200 V D = 400 V

M = 600 V

5064 = 200 V 6565 = 400 V

S

Device Type S = Sensitive SCR

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating X8 = 0.8 A N = 1 A 06 = 6 A 08 = 8 A 10 = 10 A

Description of Part Numbers

SCR

Rectifier

S

Device Type S = Non-sensitive SCR

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating 01 = 1 A 06 = 6 A 08 = 8 A 10 = 10 A 12 = 12 A 15 = 15 A 16 = 16 A 20 = 20 A 25 = 25 A 35 = 35 A 55 = 55 A 65 = 65 A 70 = 70 A

D

20

08

15

F12

D = TO

F = TO-202 (Non-isolated)

M = TO-218 (Non-isolated)

N = TO-263 (Surface Mount)

R = TO-220 (Non-isolated)

V = TO-251 (Non-isolated)

W = TO-218X (Non-isolated)

L55

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

Lead Form Dimensions

-

252 (Surface Mount)

E = TO

J = TO-218X (Isolated)

K = TO-218 (Isolated) L = TO-220 (Isolated)

-

TO

202

-

TO

220

-

TO

92

-

218X

TO

-

TO

218

Package Type

-

92 (Isolated)

V

Sidac

K

Device Type K = Sidac

Voltage Rating 105 = 95 V to 113 V 110 = 104 V to 118 V 120 = 110 V to 125 V 130 = 120 V to 138 V 140 = 130 V to 146 V 150 = 140 V to 170 V 200 = 190 V to 215 V 220 = 205 V to 230 V 240 = 220 V to 250 V 250 = 240 V to 280 V 300 = 270 V to 330 V

105

0

E70

Lead Form Dimensions

E = TO-92 (Isolated)

F = TO-202 (Non-islolated)

G = DO-15X (Isolated)

S = DO-214 (Surface Mount)

TO-202

TO-92

Package Type

Current Rating

0 = 1 A

Diac

Device Type D = Rectifier

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating 15 = 15 A 20 = 20 A 25 = 25 A

Device Type HT = Diac Trigger in DO-35 ST = Diac Trigger in DO-214

HT

Lead Form Dimensions

L = TO-220 (Isolated)

32

91

Lead Form Dimensions

32A / 5761 = 28 V to 36 V

32B / 5761A = 30 V to 34 V

36A / 5762 = 32 V to 40 V

Special Options

V = 4000 V Isolation

TO-220

Package Type

DO-35

Voltage Rating 32 = 27 V to 37 V 35 = 30 V to 40 V 40 = 35 V to 45 V

34B = 32 V to 36 V

36B = 34 V to 38 V

Quality and Reliability

It is Teccor’s policy to ship quality products on time. We accomplish this through Total Quality Management based on the fundamentals of customer focus, continuous improvement, and people involvement.

In support of this commitment, Teccor applies the following principles:

• Employees shall be respected, involved, informed, and qualified for their job with appropriate education, training, and experience.

• Customer expectations shall be met or exceeded by consistently shipping products that meet the agreed specifications, quality levels, quantities, schedules, and test and reliability parameters.

• Suppliers shall be selected by considering quality, service, delivery, and cost of ownership.

• Design of products and processes will be driven by customer needs, reliability, and manufacturability.

It is the responsibility of management to incorporate these principles into policies and systems.

It is the responsibility of those in leadership roles to coach their people and to reinforce these principles.

It is the responsibility of each individual employee to follow the spirit of this statement to ensure that we meet the primary policy — to ship quality products on time.

Quality Assurance

All products must first undergo rigid quality design reviews and pass extensive environmental life testing. Teccor uses Statistical Process Control (SPC) with associated control charts throughout to monitor the manufacturing processes.

Only those products which pass tests designed to assure Teccor's high quality and reliability standards, while economically satisfying customer requirements, are approved for shipment. All new products and materials must receive approval of QRA prior to being released to production.

The combination of reliability testing, process controls, and lot tracking assures the quality and reliability of Teccor's devices. Since even the best control systems cannot overcome measurement limitations, Teccor designs and manufactures its own computerized test equipment.

Teccor's Reliability Engineering Group conducts ongoing product reliability testing to further confirm the design and manufacturing parameters.

Incoming Material Quality

Teccor “Vendor Analysis” programs provide stringent requirements before components are delivered to Teccor. In addition, purchased materials are tested rigidly at incoming inspection for specification compliance prior to acceptance for use.

Process Controls

From silicon slice input through final testing, we use statistical methods to control all critical processes. Process audits and lot inspections are performed routinely at all stages of the manufacturing cycle.

Parametric Testing

All devices are 100% computer tested for specific electrical characteristics at critical processing points.

Final Inspection

Each completed manufacturing lot is sampled and tested for compliance with electrical and mechanical requirements.

Reliability Testing

Random samples are taken from various product families for ongoing reliability testing.

Finished Goods Inspection

Product assurance inspection is performed immediately prior to shipping.

Design Assurance

The design and production of Teccor devices is a demanding and challenging task. Disciplined skills coupled with advanced computer-aided design, production techniques, and test equipment are essential elements in Teccor's ability to meet your demands for the very highest levels of quality.

Quality and Reliability

Reliability Stress Tests

The following table contains brief descriptions of the reliability tests commonly used in evaluating Teccor product reliability on a periodic basis. These tests are applied across product lines depending on product availability and test equipment capacities. Other tests may be performed when appropriate.

Test Ty p e Typical Conditions Test Description Standards

High Temperature

AC Blocking

High Temperature

Storage Life

Temperature and Humidity

Bias Life

Temperature Cycle

[Air to Air]

Thermal Shock

[Liquid to Liquid]

Autoclave

Resistance to

Solder Heat

Solderability

TA = 100 °C to 150 °C, Bias @

100%

Rated V

T

A

, t = 24 hrs to 1000 hrs

DRM

= 150 °C, t = 250 to 1000 hrs Evaluation of the effects on

Evaluation of the reliability of product under bias conditions and elevated temperature

devices after long periods of storage at high temperature

T

= 85 °C to 95 °C, rh = 85% to

A

95%

Bias @ 80% Rated V

DRM

Evaluation of the reliability of nonhermetic packaged devices in humid environments

(320 VDC max)

t = 168 to 1008 hrs

T

= -65°C to 150°C,

A

cycles = 10 to 500

Evaluation of the device’s ability to withstand the exposure to extreme temperatures and the forces of TCE during transitions between temperatures

T

= 0 °C to 100 °C, t

A

cycled = 10 to 20

= ≤10 s,

txfr

Evaluation of the device’s ability to withstand the sudden changes in temperature and exposure to extreme temperatures

T

= 121 °C, rh = 100%, P = 15 psig,

A

t = 24 hrs to 168 hrs

T

= 260 °C, t = 10 s Evaluation of the device’s ability

A

Accelerated environmental test to evaluate the moisture resistance of plastic packages

to withstand the temperatures as seen in wave soldering operations

Steam aging = 1 hr to 8 hrs,

= 245 °C, Flux = R

T

solder

Evaluation of the solderability of device terminals after an extended period

MIL-STD-750, M-1040

MIL-STD-750, M-1031

EIA / JEDEC, JESD22-A101

MIL-STD-750, M-1051, EIA / JEDEC, JESD22-A104

MIL-STD-750, M-1056

EIA / JEDEC, JESD22-A102

MIL-STD-750, M-2031

MIL-STD-750, M-2026, ANSI-J-STD-002

Flammability Test

For the UL 94V0 flammability test, all expoxies used in Teccor encapsulated devices are recognized by Underwriters Laboratories

Standard Terms and Conditions

Supplier shall not be bound by any term proposed by Buyer in the absence of written agreement to such term signed by an authorized officer of Supplier.

(1) PRICE:

(A) Supplier reserves the right to change product prices at

any time but, whenever practicable, Supplier will give Buyer at least thirty (30) days written notice before the effective date of any price change. Unless Supplier has specifically agreed in writing, signed by an authorized officer of Supplier, that a quoted price shall not be subject to change for a certain time, all products shipped on or after the effective date of a price change may be billed at the new price level.

(B) Whenever Supplier agrees to a modification of Buyer's

order (which modification must be in writing and signed by an authorized officer of Supplier), Supplier reserves the right to alter its price, whether or not such price was quoted as “firm.”

(C) Prices do not include federal, state or local taxes, now or

hereafter enacted, applicable to the goods sold. Taxes will be added by Supplier to the sales prices whenever Supplier has legal obligation to collect them and will be paid by Buyer as invoiced unless Buyer provides Supplier with a proper tax exemption certificate.

(2) PRODUCTION: Supplier may, at its sole discretion and at

any time, withdraw any catalog item from further production without notice or liability to Buyer.

(3) INTEREST:

(A) All late payments shall bear interest thirty (30) days after

the due date stated on the invoice until paid at the lower of one and one-half percent per month or the maximum rate permitted by law. All interest becoming due shall, if not paid when due, be added to principal and bear interest from the due date. At Supplier's option, any payment shall be applied first to interest and then to principal.

(B) It is the intention of the parties to comply with the laws of

the jurisdiction governing any agreement between the parties relating to interest. If any construction of the agreement between the parties indicates a different right given to Supplier to demand or receive any sum greater than that permissible by law as interest, such as a mistake in calculation or wording, this paragraph shall override. In any contingency which will cause the interest paid or agreed to be paid to exceed the maximum rate permitted by law, such excess will be applied to the reduction of any principal amount due, or if there is no principal amount due, shall be refunded.

(4) TITLE AND DELIVERY: Title to goods ordered by Buyer and

risk of loss or damage in transit or thereafter shall pass to Buyer upon Supplier's delivery of the goods at Supplier's plant or to a common carrier for shipment to Buyer.

(5) CONTINGENCIES: Supplier shall not be responsible for any

failure to perform due to causes reasonably beyond its control. These causes shall include, but not be restricted to, fire, storm, flood, earthquake, explosion, accident, acts of public enemy, war rebellion, insurrection, sabotage, epidemic, quarantine restrictions, labor disputes, labor shortages, labor slow downs and sit downs, transportation embargoes, failure or delays in transportation, inability to secure raw materials or machinery for the manufacture of its devices, acts of God, acts of the Federal Government or any agency thereof, acts of any state or local government or agency thereof, and judicial action. Similar causes shall excuse Buyer for failure to take goods ordered by Buyer, from the time Supplier receives written notice from Buyer and for as long as the disabling cause continues, other than for goods already in transit or specially fabricated and not readily saleable to other buyers.

Supplier assumes no responsibility for any tools, dies, and other equipment furnished Supplier by Buyer.

(6) LIMITED WARRANTY AND EXCLUSIVE REMEDY: Supplier

warrants all catalog products to be free from defects in materials and workmanship under normal and proper use and application for a period of twelve (12) months from the date code on the product in question (or if none, from the date of delivery to Buyer.) With respect to products assembled, prepared, or manufactured to Buyer's specifications, Supplier warrants only that such products will meet Buyer's specifications upon delivery. As the party responsible for the specifications, Buyer shall be responsible for testing and inspecting the products for adherence to specifications, and Supplier shall have no liability in the absence of such testing and inspection or if the product passes such testing or inspection. THE ABOVE WARRANTY IS THE ONLY WARRANTY EXTENDED BY SUPPLIER, AND IS IN LIEU OF AND EXCLUDES ALL OTHER WARRANTIES AND CONDITIONS, EXPRESSED OR IMPLIED (EXCEPT AS PROVIDED HEREIN AS TO TITLE), ON ANY GOODS OR SERVICES SOLD OR RENDERED BY SUPPLIER, INCLUDING ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. THIS WARRANTY WILL NOT CREATE WARRANTY COVERAGE FOR ANY ITEM INTO WHICH ANY PRODUCT SOLD BY SUPPLIER MAY HAVE BEEN INCORPORATED OR ADDED.

Standard Terms and Conditions

SUPPLIER'S ENTIRE LIABILITY AND BUYER'S EXCLUSIVE REMEDY UNDER THIS WARRANTY SHALL BE, AT SUPPLIER'S OPTION, EITHER THE REPLACEMENT OF, REPAIR OF, OR ISSUANCE OF CREDIT TO BUYER'S ACCOUNT WITH SUPPLIER FOR ANY PRODUCTS WHICH ARE PROPERLY RETURNED BY BUYER DURING THE WARRANTY PERIOD. All returns must comply with the following conditions: (A) Supplier is to be promptly notified in writing upon discov-

ery of defects by Buyer.

(B) Buyer must obtain a Return Material Authorization

(RMA) number from the Supplier prior to returning product.

(C) The defective product is returned to Supplier, transporta-

tion charges prepaid by Buyer.

(D) Supplier's examination of such product discloses, to its

satisfaction, that such defects have not been caused by misuse, neglect, improper installation, repair, alteration, or accident.

(E) The product is returned in the form it was delivered with

any necessary disassembly carried out by Buyer at Buyer's expense.

IN NO EVENT SHALL SUPPLIER, OR ANYONE ELSE ASSOCIATED IN THE CREATION OF ANY OF SUPPLIER'S PRODUCTS OR SERVICES, BE LIABLE TO BUYER FOR INCIDENTAL OR CONSEQUENTIAL DAMAGES OF ANY NATURE INCLUDING LOSS OF PROFITS, LOSS OF USE, BUSINESS INTERUPTION, AND THE LIKE. BUYER ACKNOWLEDGES THAT THE ABOVE WARRANTIES AND LIMITATIONS THEREON ARE APPROPRIATE AND REASONABLE IN EFFECTUATING SUPPLIER'S AND BUYER'S MUTUAL INTENTION TO CONDUCT AN EFFICIENT TRANSACTION AT PRICES MORE ADVANTAGEOUS TO BUYER THAN WOULD BE AVAILABLE IN THE PRESENCE OF OTHER WARRANTIES AND ASSURANCES.

(7) PATENTS: Buyer shall notify Supplier in writing of any claim

that any product or any part of use thereof furnished under this agreement constitutes an infringement of any U.S. patent, copyright, trade secret, or other proprietary rights of a third party. Notice shall be given within a reasonable period of time which should in most cases be within ten (10) days of receipt by Buyer of any letter, summons, or complaint pertaining to such a claim. At its option, Supplier may defend at its expense any action brought against Buyer to the extent that it is based on such a claim. Should Supplier choose to defend any such claim, Supplier may fully participate in the defense, settlement, or appeal of any action based on such claim.

Should any product become, or in Supplier's opinion be likely to become, the subject of an action based on any such claim, Supplier may, at its option, as the Buyer's exclusive remedy, either procure for the Buyer the right to continue using the product, replace the product or modify the product to make it noninfringing. IN NO EVENT SHALL SUPPLIER BE LIABLE FOR ANY INCIDENTAL OR CONSEQUENTIAL DAMAGES BASED ON ANY CLAIM OF INFRINGEMENT.

Supplier shall have no liability for any claim based on modifications of a product made by any person or entity other than Supplier, or based on use of a product in conjunction with any other item, unless expressly approved by Supplier. Supplier does not warrant goods against claims of infringement which are assembled, prepared, or manufactured to Buyer's specifications.

(8) NON-WAIVER OF DEFAULT: Each shipment made under

any order shall be treated as a separate transaction, but in the event of any default by Buyer, Supplier may decline to make further shipments without in any way affecting its rights under such order. If, despite any default by Buyer, Supplier elects to continue to make shipments, its action shall not constitute a waiver of that or any default by Buyer or in any way affect Supplier's legal remedies for any such default. At any time, Supplier's failure to exercise any right to remedy available to it shall not constitute a waiver of that right or remedy.

(9) TERMINATION: If the products to be furnished under this

order are to be used in the performance of a Government contract or subcontract, and the Government terminates such contract in whole or part, this order may be canceled to the extent it was to be used in the canceled portion of said Government contract and the liability of Buyer for termination allowances shall be determined by the then applicable regulations of the Government regarding termination of contracts. Supplier may cancel any unfilled orders unless Buyer shall, upon written notice, immediately pay for all goods delivered or shall pay in advance for all goods ordered but not delivered, or both, at Supplier's option.

(10) LAW: The validity, performance and construction of these

terms and conditions and any sale made hereunder shall be governed by the laws of the state of Texas.

(11) ASSIGNS: This agreement shall not be assignable by

either Supplier or Buyer. However, should either Supplier or Buyer be sold or transferred in its entirety and as an ongoing business, or should Supplier or Buyer sell or transfer in its entirety and as an ongoing concern, any division, department, or subsidiary responsible in whole or in part for the performance of this Agreement, this Agreement shall be binding upon and inure to the benefit of those successors and assigns of Supplier, Buyer, or such division, department, or subsidiary.

(12) MODIFICATION OF STANDARD TERMS AND CONDI-

TIONS: No attempted or suggested modification of or addition to any of the provisions upon the face or reverse of this form, whether contained or arising in correspondence and/or documents passing between Supplier and Buyer, in any course of dealing between Supplier or Buyer, or in any customary usage prevalent among businesses comparable to those of Supplier and/or Buyer, shall be binding upon Supplier unless made and agreed to in writing and signed by an officer of Supplier.

(13) QUANTITIES: Any variation in quantities of electronic com-

ponents, or other goods shipped over or under the quantities ordered (not to exceed 5%) shall constitute compliance with Buyer's order and the unit price will continue to apply.

Notes

E0

Data Sheets

V-I Characteristics of Thyristor Devices - - - - - - - - - - - - - - - - - - - - - E0-2 Electrical Parameter Terminology - - - - - - - - - - - - - - - - - - - - - - - - - E0-3

Sensitive Triacs- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E1 Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E2 QUADRACs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E3 Alternistor Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E4 Sensitive SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E5 SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E6 Rectifiers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E7 Diacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E8 SIDAC - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E9

V-I Characteristics of Thyristor Devices

Voltage Drop (V Specified Current (i

) at

T

)

T

Minimum Holding Current (I

)

H

-V

V-I Characteristics of Triac Device

+I

Specified Minimum

Off-state Blocking

Voltage (V

Breakover

-I

+I

Latching Current (I

Off-state Leakage Current – (I Specified V

)

DRM

Voltage

DRM DRM

L

+V

+I

I

T

)

I

H

)

at

-V

(V

=

R

S

(IS - IBO)

I

BO

DRM

- VS)

I

S

I

BO

V

T

V

DRM

R

S

+V

V

BO

V

S

-I

V-I Characteristics of Sidac Device with Negative Resistance

+I

Reverse Leakage Current - (I

RRM

Specified V

RRM

-V

Voltage Drop (VT) at Specified Current (i

) at

Minimum Holding Current (I

Specified Minimum

Reverse Blocking

Voltage (V

Reverse

Breakdown

Voltage

RRM

)

T

)

H

)

V-I Characteristics of SCR Device

-I

Latching Current (IL)

Specified Minimum

Off - State

Blocking

Voltage (V

DRM

Forward

Breakover

Voltage

Off - State Leakage Current - (I Specified V

)

DRM

10 mA

∆V

Breakover

) at

+V

Current I

BO

+V-V

Breakover

Voltage

V

BO

-I

V-I Characteristics of Bilateral Trigger Diac

Electrical Parameter Terminology

Thyristor

di/dt (Critical Rate-of-rise of On-state Current) – Maximum

value of the rate-of-rise of on-state current which a thyristor can withstand without deleterious effect

dv/dt (Critical Rate-of-rise of Off-state Voltage or Static dv/dt) –

which will cause switching from the off state to the on state

dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a Triac (Commutating dv/dt) –

of principal voltage which will cause switching from the off state to the on state immediately following on-state current conduction in the opposite quadrant

I2t (RMS Surge (Non-repetitive) On-state Fusing Current) –

Measure of let-through energy in terms of current and time for fusing purposes

I

BO

point

I

DRM

current that may occur under the conditions of V

IGT (Gate Trigger Current) – Minimum gate current required to

switch a thyristor from the off state to the on state

IH (Holding Current) – Minimum principal current required to

maintain the thyristor in the on state

IPP (Peak Pulse Current) – Peak pulse current at a short time

duration and specified waveshape

I

RRM

current that may occur under the conditions of V

IS (Switching Current) – Current at V

from the clamping state to on state

I

T(RMS)

that may be allowed under stated conditions, usually the fullcycle RMS current

I

TSM

cycle AC current pulse allowed

P

power which may be dissipated between the gate and main terminal 1 (or cathode) average over a full cycle

PGM (Peak Gate Power Dissipation) – Maximum power which

may be dissipated between the gate and main terminal 1 (or cathode) for a specified time duration

R

ture difference between the thyristor junction and ambient divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium

Note: Ambient is defined as the point where temperature does not change as a result of the dissipation.

R

difference between the thyristor junction and the thyristor case divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium

Minimum value of the rate-of-rise of principal voltage

Minimum value of the rate-of-rise

(Breakover Current) – Principal current at the breakover

(Repetitive Peak Off-state Current) – Maximum leakage

DRM

(Repetitive Peak Reverse Current) – Maximum leakage

RRM

when a sidac switches

S

(On-state Current) – Anode cathode principal current

(Surge (Non-repetitive) On-state Current) – Peak single

(Average Gate Power Dissipation) – Value of gate

G(AV)

(Thermal Resistance, Junction-to-ambient) – Tempera-

θJA

(Thermal Resistance, Junction-to-case) – Temperature

θJC

tgt (Gate-controlled Turn-on Time) – Time interval between

the 10% rise of the gate pulse and the 90% rise of the principal current pulse during switching of a thyristor from the off state to the on state

tq (Circuit-commutated Turn-off Time) – Time interval

between the instant when the principal current has decreased to zero after external switching of the principal voltage circuit and the instant when the SCR is capable of supporting a specified principal voltage without turning on

VBO (Breakover Voltage) – Principal voltage at the breakover

point

V

(Repetitive Peak Off-state Voltage) – Maximum allow-

DRM

able instantaneous value of repetitive off-state voltage that may be applied across a bidirectional thyristor (forward or reverse direction) or SCR (forward direction only)

V

(Gate Trigger Voltage) – Minimum gate voltage required to

GT

produce the gate trigger current

V

(Repetitive Peak Reverse Voltage) – Maximum allow-

RRM

able instantaneous value of a repetitive reverse voltage that may be applied across an SCR without causing reverse current avalanche

VS (Switching Voltage) – Voltage point after V

switches from a clamping state to on state

when a sidac

BO

VT (On-state Voltage) – Principal voltage when the thyristor is in

the on state

Diode Rectifiers

I

(Average Forward Current) – Average forward conduc-

F(AV)

tion current

IFM (Maximum (Peak) Reverse Current) – Maximum reverse

leakage current that may occur at rated V

I

(RMS Forward Current) – RMS forward conduction cur-

F(RMS)

rent

I

(Maximum (Peak) Forward (Non-repetitive) Surge

FSM

Current) –

rent allowed for specified duration

Maximum (peak) forward single cycle AC surge cur-

VFM (Maximum (Peak) Forward Voltage Drop) – Maximum

(peak) forward voltage drop from the anode to cathode at stated conditions

VR (Reverse Blocking Voltage) – Maximum allowable DC

reverse blocking voltage that may be applied to the rectifier

V

(Maximum (Peak) Repetitive Reverse Voltage) – Maxi-

RRM

mum peak allowable value of a repetitive reverse voltage that may be applied to the rectifier

RRM

Notes

Selected Packages*

File #E71639

U.L. RECOGNIZED

TO-202

E1

TO-92

*TO-220

Isolated

3-lead

Compak

TO-252

D-Pak

MT2 MT1

TO-251

V-P ak

G

Sensitive Triacs

E1

General Description

Teccor's line of sensitive gate triacs includes devices with current capabilities through 8 A. Voltage ranges are available from 200 V to 600 V. This line features devices with guaranteed gate control in Quadrants II and IV as well as control in the commonly used Quadrants I and III. Four-quadrant control devices require sensitive gate triacs. They can be controlled by digital circuitry where positive-only or negative-only pulses must control AC current in both directions through the device. Note that triacs with low I

values in Quadrants II and IV will have lower dv/dt

GT

characteristics.

The sensitive gate triac is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. It is used primarily for AC switching and phase control applications such as motor speed controls, temperature modulation controls, and lighting controls.

The epoxy TO-92 and TO-220 configurations feature Teccor's electrically-isolated construction where the case or mounting tab is internally isolated from the semiconductor chip and lead attachments. Non-isolated epoxy TO-202 packages are available as well as TO-251 and surface mount TO-252 (D-Pak). Tapeand-reel capability and tube packing also are available. See “Packing Options” section of this catalog.

(0.8 A to 8 A)

All Teccor triacs have glass-passivated junctions. This glassing process prevents migration of contaminants and ensures longterm device reliability with parameter stability.

Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.

Features

• Electrically-isolated packages

• Glass-passivated junctions ensure long device reliability and parameter stability

• Voltage capability — up to 600 V

• Surge capability — up to 80 A

• Four-quadrant gating guaranteed

Compak Sensitive Gate Triac

• Surface mount package — 0.8 A and 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

Sensitive Triacs Data Sheets

I

T(RMS)

(11)

MT2

MT1

G

TO-92 Compak TO-220

Isolated Non-isolated

MT2

G

MT2

MT1

G

MT2

MT1

MT2

MT1

G

TO-252

D-Pak TO-202

MT1

MT2

G

MT1

TO-251

V-Pa k

MAX See “Package Dimensions” section for variations. (12) MIN MAX MAX

L2X8E3 L2X3 200 3 3 3 3 0.01 0.1 L4X8E3 L4X3 400 3 3 3 3 0.01 0.1 L6X8E3 L6X3 600 3 3 3 3 0.01 0.1 L2X8E5 L2X5 200 5 5 5 5 0.01 0.1 L4X8E5 L4X5 400 5 5 5 5 0.01 0.1

0.8 A

L6X8E5 L6X5 600 5 5 5 5 0.01 0.1 L2X8E6 200 5 5 5 10 0.01 0.1 L4X8E6 400 5 5 5 10 0.01 0.1 L6X8E6 600 5 5 5 10 0.01 0.1 L2X8E8 200 10 10 10 20 0.01 0.1 L4X8E8 400 10 10 10 20 0.01 0.1 L6X8E8 600 10 10 10 20 0.01 0.1 L201E3 L2N3 200 33330.01 0.1 L401E3 L4N3 400 33330.01 0.1 L601E3 L6N3 600 33330.01 0.1 L201E5 L2N5 200 55550.01 0.1 L401E5 L4N5 400 55550.01 0.1

1A

L601E5 L6N5 600 55550.01 0.1 L201E6 200 5 5 5 10 0.01 0.1 L401E6 400 5 5 5 10 0.01 0.1 L601E6 600 5 5 5 10 0.01 0.1 L201E8 200 10101020 0.01 0.1 L401E8 400 10101020 0.01 0.1 L601E8 600 10101020 0.01 0.1

L2004L3 L2004D3 L2004F31 L2004V3 200 3 3 3 3 0.01 0.2 L4004L3 L4004D3 L4004F31 L4004V3 400 3 3 3 3 0.01 0.2 L6004L3 L6004D3 L6004F31 L6004V3 600 3 3 3 3 0.01 0.2 L2004L5 L2004D5 L2004F51 L2004V5 200 5 5 5 5 0.01 0.2 L4004L5 L4004D5 L4004F51 L4004V5 400 5 5 5 5 0.01 0.2

4A

L6004L5 L6004D5 L6004F51 L6004V5 600 5 5 5 5 0.01 0.2 L2004L6 L2004D6 L2004F61 L2004V6 200 5 5 5 10 0.01 0.2 L4004L6 L4004D6 L4004F61 L4004V6 400 5 5 5 10 0.01 0.2 L6004L6 L6004D6 L6004F61 L6004V6 600 5 5 5 10 0.01 0.2 L2004L8 L2004D8 L2004F81 L2004V8 200 10 10 10 20 0.01 0.2 L4004L8 L4004D8 L4004F81 L4004V8 400 10 10 10 20 0.01 0.2 L6004L8 L6004D8 L6004F81 L6004V8 600 10 10 10 20 0.01 0.2

MT2

V

DRM

(1)

G

I

GT

(3) (6) (9)

mAmps

Volts

QI QII QIII QIV

25 °C

See “General Notes” on page E1 - 4 and “Electrical Specification Notes” on page E1 - 5.

Part No.

T

C

I

DRM

(1) (14)

mAmps

=

TC =

110 °C

Data Sheets Sensitive Triacs

V

TM

(1) (4)

Volt s

=

T

C

25 °C

MAX MAX MAX TYP TYP TYP

1.6 2 5 1 10 0.2 10/8.3 0.5 20 2.8 0.41 20

1.6 2 5 1 10 0.2 10/8.3 0.5 15 2.8 0.41 20

1.6 2 5 1 10 0.2 10/8.3 0.5 10 2.8 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 20 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 15 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 10 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 30 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 25 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 20 3 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 35 3.2 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 30 3.2 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 25 3.2 0.41 20

1.625110 0.220/16.70.5 202.81.6 20

1.625110 0.220/16.70.5 102.81.6 20

1.6 2 10 1 10 0.2 20/16.7 1 20 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 10 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 30 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 20 3 1.6 20

1.6 2 15 1 10 0.2 20/16.7 1 35 3.2 1.6 20

1.6 2 15 1 10 0.2 20/16.7 1 25 3.2 1.6 20

1.6 2 5 1.2 15 0.3 40/33 0.5 25 2.8 6.6 50

1.6 2 5 1.2 15 0.3 40/33 0.5 15 2.8 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 25 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 15 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 30 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 20 3 6.6 50

1.6 2 15 1.2 15 0.3 40/33 2 35 3.2 6.6 50

1.6 2 15 1.2 15 0.3 40/33 2 25 3.2 6.6 50

V

GT

(2) (5) (15)

Volt s TC =

25 °C60/50Hz

I

H

(1) (7)

mAmps

I

GTM

(13)

Amps

P

GM

(13)

Watts Watts

P

G(AV)

I

TSM

(8) (10)

Amps

dv/dt(c) dv/dt

(1) (10)

Volt s/ µSec

(1)

Vol ts/µSec

TC =

100 °C

t

gt

(9)

µSec Amps

I2t di/dt

2

Sec Amps/µSec

See “General Notes” on page E1 - 4 and “Electrical Specification Notes” on page E1 - 5.

Sensitive Triacs Data Sheets

I

T(RMS)

(11)

MAX See “Package Dimensions” section for variations. (12) MIN MAX MAX

6A

8A

Isolated Non-isolated

MT2

G

MT1

MT2

TO-220

L2006L5 L2006D5 L2006V5 2005555 0.02 0.5 L4006L5 L4006D5 L4006V5 4005555 0.02 0.5 L6006L5 L6006D5 L6006V5 6005555 0.02 0.5 L2006L6 L2006D6 L2006V6 200 5 5 5 10 0.02 0.5 L4006L6 L4006D6 L4006V6 400 5 5 5 10 0.02 0.5 L6006L6 L6006D6 L6006V6 600 5 5 5 10 0.02 0.5 L2006L8 L2006D8 L2006V8 200 10 10 10 20 0.02 0.5 L4006L8 L4006D8 L4006V8 400 10 10 10 20 0.02 0.5 L6006L8 L6006D8 L6006V8 600 10 10 10 20 0.02 0.5 L2008L6 L2008D6 L2008V6 200 5 5 5 10 0.02 0.5 L4008L6 L4008D6 L4008V6 400 5 5 5 10 0.02 0.5 L6008L6 L6008D6 L6008V6 600 5 5 5 10 0.02 0.5 L2008L8 L2008D8 L2008V8 200 10 10 10 20 0.02 0.5 L4008L8 L4008D8 L4008V8 400 10 10 10 20 0.02 0.5 L6008L8 L6008D8 L6008V8 600 10 10 10 20 0.02 0.5

TO-252

D-Pak

MT1

MT2

G

MT1

MT2

TO-251

V-Pa k

V

Volt s

DRM

(1)

mAmps

QI QII QIII QIV T

I

GT

(3) (6)

(1) (14)

mAmps

= 25 °C TC = 110 °C

C

Part No.

I

DRM

Specified Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA with

µs rise time

0.1

dv/dt — Critical rate-of-rise of off-state voltage at rated V

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

and I

commutating di/dt = 0.54 rated I

T(RMS)

unenergized

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

I

for fusing

— Peak off-state current, gate open; V

I

DRM

— DC gate trigger current in specific operating quadrants;

I

GT

= 12 V dc; RL = 60 Ω

V

D

— Peak gate trigger current

I

GTM

I

— Holding current gate open; initial on-state current = 100 mA dc

H

— RMS on-state current conduction angle of 360°

I

T(RMS)

— Peak one-cycle surge

I

TSM

— Average gate power dissipation

P

G(AV)

— Peak gate power dissipation; I

P

GM

GT

= max rated value

DRM

≤ I

GTM

tgt — Gate controlled turn-on time; IGT = 50 mA with 0.1 µs rise time

— Repetitive peak off-state/blocking voltage

V

DRM

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω

V

GT

— Peak on-state voltage at max rated RMS current

V

TM

DRM

/ms; gate

gate open

DRM

General Notes

• All measurements are made with 60 Hz resistive load and at an

ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

devices and -40 °C to 110 °C for all other devices.

• Storage temperature range (T

devices, -40 °C to +150 °C for TO-202 devices, and -40 °C to +125 °C for TO-220 devices.

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum at a minimum of 1/16” (1.59 mm) from case.

• The case or lead temperature (T dimensional outline drawings. See “Package Dimensions” section of this catalog.

) is -65 °C to +110 °C for TO-92

J

) is -65 °C to +150 °C for TO-92

S

or TL) is measured as shown on

C

Data Sheets Sensitive Triacs

V

TM

(1) (4)

Volts

T

= 25 °C TC = 25 °C 60/50 Hz TC = 100 °C

C

MAX MAX MAX TYP TYP TYP

1.6 2 10 1.6 18 0.4 60/50 1 40 3 15 70

1.6 2 10 1.6 18 0.4 60/50 1 30 3 15 70

1.6 2 10 1.6 18 0.4 60/50 1 20 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 40 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 30 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 20 3 15 70

1.6 2 20 1.6 18 0.4 60/50 2 45 3.2 15 70

1.6 2 20 1.6 18 0.4 60/50 2 40 3.2 15 70

1.6 2 20 1.6 18 0.4 60/50 2 30 3.2 15 70

1.6 2 10 1.6 18 0.4 80/65 2 40 3 26.5 70

1.6 2 10 1.6 18 0.4 80/65 2 30 3 26.5 70

1.6 2 10 1.6 18 0.4 80/65 2 20 3 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 45 3.2 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 40 3.2 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 30 3.2 26.5 70

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage V

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E1.4 for i

(5) See Figure E1.6 for V

(6) See Figure E1.7 for I

(7) See Figure E1.5 for I

(8) See Figure E1.9 for surge rating and specific duration.

(9) See Figure E1.8 for t

(10) See Figure E1.2 and Figure E1.3 for maximum allowable case

temperature at maximum rated current.

(11) See Figure E1.1, Figure E1.2, and Figure E1.3 for T

I

T(RMS)

(12) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(13) Pulse width ≤10 µs

or T

(14) T

C

(15) Minimum non-trigger V

V

GT

(2) (5) (15)

Volts

I

H

(1) (7)

mAmps

versus vT.

T

versus TC.

GT

versus TC.

GT

versus TC.

H

versus IGT.

gt

I

GTM

(13)

Amps

GT

.

= TJ for test conditions in off state

L

at 110 °C is 0.2 V.

GT

P

GM

(13)

Watts Watts

P

G(AV)

with reference to MT1

or TC versus

A

I

TSM

(8) (10)

Amps

dv/dt(c) dv/dt

(1) (10)

Volts/ µSec

(1)

Volts/ µSec

t

gt

(9)

µSec Amps

I2t di/dt

2

Sec Amps/µSec

Gate Characteristics

Teccor triacs may be turned on between gate and MT1 terminals in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses

When maximum surge capability is required, pulses should be a minimum of one magnitude above I waveform (

≤1 µs rise time).

ALL POLARITIES ARE REFERENCED TO MT1

(-)

I

GT

GATE

I

-

GT

(-)

I

GT

GATE

MT2 POSITIVE

(Positive Half Cycle)

MT2

MT1

REF

MT2

REF

QIII

MT1

MT2 NEGATIVE

(Negative Half Cycle)

rating with a steep rising

GT

+

(+)

I

GT

GATE

QII

QI QIV

(+)

I

GT

GATE

-

MT2

REF

MT2

REF

Definition of Quadrants

MT1

+

I

GT

Sensitive Triacs Data Sheets

Electrical Isolation

Teccor’s isolated triac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following isolation table shows standard isolation ratings.

Electrical Isolation

from Leads to Mounting Tab

VACRMS TO-220 *

2500 Standard

*UL Recognized File #E71639

Thermal Resistance (Steady State) Junction to Mounting Tab

and Junction to Ambient

[R

R

θJC

] °C/W (TYP)

θJA

Package Code ECFLF2DV

Typ e

TO-92

Plastic Compak

TO-202

Type 1

TO-220 Isolated

TO-202

Type 2

TO-252

D-Pak

TO-251

V-Pa k

0.8 A 60 [135] 60 *

1 A 50 [95] 40 *

4A 3.5 [45] 3.6 [50] 6.0 [70] 3.5 6.0 [70]

6A 3.3 3.2 3.2

8A 2.8 2.7 2.7

* Mounted on 1 cm

2

copper foil surface; two-ounce copper foil

120

) - ˚C

A

T

100

80

60

40

25 20

Maximum Allowable Ambient Temperature (

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING – NO HEATSINK

1 A TO-92

0.8 A TO-92

RMS On-State Current [I

˚

TO-220 and TYPE 1 and 3 TO-202

TYPE 2 and 4 TO-202 and TO-251

] - Amps

T(RMS)

110

) – ˚C

C

100

90

80

70

60

50

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Maximum Allowable Case Temperature (T

0.8 A

RMS On-State Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawings

1 A

] – Amps

T(RMS)

Figure E1.1 Maximum Allowable Ambient Temperature versus

On-state Current

Figure E1.2 Maximum Allowable Case Temperature versus

On-state Current (0.8 A and 1 A)

Data Sheets Sensitive Triacs

110

- ˚C

)

105

C

T

(

100

95

90

85

80

4 A TYPE 1 and 3 TO-202 4 A TO-220 (Isolated) 4 A TO-252

75

70

4 A TYPE 2 and 4 TO-202

65

4 A TO-251

Maximum Allowable Case Temperature

60

01 23 4 5 6 7 8

RMS On-State Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawings

6 A TO-220 (Isolated)

8 A TO-251 and TO-252

8 A TO-220 (Isolated)

T(RMS)

6 A TO-251 6 A TO-252

] - Amps

Figure E1.3 Maximum Allowable Case Temperature versus

On-state Current (4 A, 6 A, and 8 A)

20

TC = 25 ˚C

18

16

14

) - Amps

12

T

10

8

6

4

On-state Current (i

Positive or Negative Instantaneous

2

0

0 0.5 0.8 1.0 1.2 1.4 1.6 1.8

6 A and 8 A

4 A

1 A

Positive or Negative Instantaneous

On-state Voltage (v

) - Volts

T

0.8 A

2.0

1.5

= 25 ˚C)

GT

C

V

(T

1.0

GT

V

.5

Ratio of

0

-65 -40 -15 +65 +110 +125+25

Case Temperature (

) - ˚C

T

C

Figure E1.6 Normalized DC Gate Trigger Voltage for All Quadrants

versus Case Temperature

4.0

3.0

= 25 ˚C)

GT

I

C

(T

2.0

GT

I

1.0

Ratio of

0

-65 -40 -15 +65 +110 +125+25

Case Temperature (TC) - ˚C

Figure E1.4 On-state Current versus On-state Voltage (Typical)

Figure E1.7 Normalized DC Gate Trigger Current for All Quadrants

versus Case Temperature

4.0

INITIAL ON-STATE CURRENT

= 100 mA (DC) 0.8 - 4 A Devices

= 200 mA (DC) 6 - 8 A Devices

-40 -15 +25 +65

Case Temperature (

T

C

) - ˚C

+110

+125

H

I

3.0

C)

˚

= 25

C

2.0

(T

H

I

Ratio of

1.0

0

-65

Figure E1.5 Normalized DC Holding Current versus Case Temperature

Figure E1.8 Turn-on Time versus Gate Trigger Current (Typical)

7.0

TC = 25 ˚C

6.0

5.0

) - µSec

gt

4.0

3.0

IGT = 3 mA MAX

Turn-On Time (t

2.0

1.0

0

123465 8 10 20 30 40 60 80 100

IGT = 5 mA MAX

IGT = 10 mA MAX

DC Gate Trigger Current (IGT) - mA

IGT = 20 mA

MAX

Sensitive Triacs Data Sheets

200

150

100

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-state Current: [I Rated Value at Specified Case Temperature

80

T(RMS)

60

40

) – Amps

30

TSM

20

10

8 6

4

Peak Surge (Non-Repetitive)

3

On-State Current (I

2

1

1 2436810204030 60 100 200 400 600 1000

]: Maximum

NOTES:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

8 A

6 A

4 A

1 A

0.8 A

Surge Current Duration – Full Cycles

Figure E1.9 Peak Surge Current versus Surge Current Duration

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

1.5 CONDUCTION ANGLE: 360˚

1.0

] – Watts

D(AV)

0.5

[P

Average On-state Power Dissipation

Figure E1.10 Power Dissipation (Typical) versus RMS On-state Current

(0.8 A and 1 A)

0.8 A

0

0 0.25 0.50 0.75 1.0 1.25 1.5

RMS On-state Current [I

1 A

T(RMS)

] – Amps

9.0

CURRENT WAVEFORM: Sinusoidal

8.0

LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

7.0

6.0

5.0

] – Watts

4.0

D(AV)

[P

3.0

2.0

Average On-state Power Dissipation

1.0

0

0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

Figure E1.11 Power Dissipation (Typical) versus RMS On-state Current

(4 A, 6 A, and 8 A)

4 A

RMS On-state Current [I

˚

6 A and 8 A

T(RMS)

] – Amps

8.0

Selected Packages*

File #E71639

U.L. RECOGNIZED

E2

3-lead

Compak

*TO-3

Fastpak

TO-92

TO-263

2

D

Pak

TO-202 *TO-220

TO-252

D-Pak

TO-251

V-P ak

MT2 MT1

G

Triacs

(0.8 A to 35 A)

E2

General Description

These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V.

The triac may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT1.

Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. This feature facilitates the use of low-cost assembly and convenient packaging techniques. Tape-and-reel capability is available. See “Packing Options” section of this catalog.

All Teccor triacs have glass-passivated junctions to ensure longterm device reliability and parameter stability. Teccor's glass-passivated junctions offer a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.

Features

• Electrically-isolated packages

• Glass-passivated junctions

• Voltage capability — up to 1000 V

• Surge capability — up to 200 A

Compak Package

• Surface mount package — 0.8 A and 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

Triacs Data Sheets

I

T(RMS)

(4)

MT2

MT1

G

TO-92 TO-220 Compak TO-202 TO-220

Isolated Non-isolated

MT1

MT2

G

MT1

MT2

G

MT1

MT2

MT1

MT2

G

MT2

TO-252

D-Pak

MT1

MT2

G

TO-263

2

D

Pak

G

MT1

TO-251

V-Pa k

MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP

0.8 A

Q2X8E3 Q2X3 200 10 10 10 25

Q4X8E3 Q4X3 400 10 10 10 25

Q6X8E3 Q6X3 600 10 10 10 25

Q2X8E4 Q2X4 200 25 25 25 50

Q4X8E4 Q4X4 400 25 25 25 50

Q6X8E4 Q6X4 600 25 25 25 50

1A

Q201E3 Q2N3 200 101010 25

Q401E3 Q4N3 400 101010 25

Q601E3 Q6N3 600 101010 25

Q201E4 Q2N4 200 252525 50

Q401E4 Q4N4 400 252525 50

Q601E4 Q6N4 600 252525 50

4A

Q2004L3 Q2004F31 Q2004D3 Q2004V3 200 10 10 10 25

Q4004L3 Q4004F31 Q4004D3 Q4004V3 400 10 10 10 25

Q6004L3 Q6004F31 Q6004D3 Q6004V3 600 10 10 10 25

Q2004L4 Q2004F41 Q2004D4 Q2004V4 200 25 25 25 50

Q4004L4 Q4004F41 Q4004D4 Q4004V4 400 25 25 25 50

Q6004L4 Q6004F41 Q6004D4 Q6004V4 600 25 25 25 50

Q8004L4 Q8004D4 Q8004V4 800 25 25 25 50

QK004L4 QK004D4 QK004V4 1000 25 25 25 50

6A

Q2006L4 Q2006F41 Q2006R4 Q2006N4 200 25 25 25 50

Q4006L4 Q4006F41 Q4006R4 Q4006N4 400 25 25 25 50

Q6006L5 Q6006F51 Q6006R5 Q6006N5 600 50 50 50 75

Q8006L5 Q8006R5 Q8006N5 800 50 50 50 75

QK006L5 QK006R5 QK006N5 1000 50 50 50 75

8A

Q2008L4 Q2008F41 Q2008R4 Q2008N4 200 25 25 25 50

Q4008L4 Q4008F41 Q4008R4 Q4008N4 400 25 25 25 50

Q6008L5 Q6008F51 Q6008R5 Q6008N5 600 50 50 50 75

Q8008L5 Q8008R5 Q8008N5 800 50 50 50 75

QK008L5 QK008R5 QK008N5 1000 50 50 50 75

MT1

MT2

V

DRM

(1)

G

Volt s

I

GT

(3) (7) (15)

mAmps

QI QII QIII QIV QIV

See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.

Part Number

Data Sheets Triacs

I

DRM

(1) (16)

mAmps

T

=

TC =

C

25 °C

100 °C

125 °C

MAX MAX MAX MAX TYP MIN TYP

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 40 30 2.5 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 35 25 2.5 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 25 15 2.5 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 50 40 3 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 45 35 3 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 35 25 3 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 20/16.7 1 40 30 2.5 1.6 30

0.02 0.5 1 1.6 2 15 1 10 0.2 20/16.7 1 30 20 2.5 1.6 30

0.02 0.5 1 1.6 2.5 25 1 10 0.2 20/16.7 1 50 40 3 1.6 30

0.02 0.5 1 1.6 2.5 25 1 10 0.2 20/16.7 1 40 30 3 1.6 30

0.05 0.5 2 1.6 2 20 1.2 15 0.3 55/46 2 50 40 2.5 12.5 50

0.05 0.5 2 1.6 2 20 1.2 15 0.3 55/46 2 40 30 2.5 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 100 75 3 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 75 50 3 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 60 40 3 12.5 50

0.05 3 1.6 2.5 30 1.2 15 0.3 55/46 2 50 3 12.5 50

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 200 120 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 150 100 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 125 85 3 26.5 70

0.05 3 1.6 2.5 50 1.6 18 0.5 80/65 4 100 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 250 150 3 41 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 220 125 3 41 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 150 100 3 41 70

0.05 3 1.6 2.5 50 1.8 20 0.5 100/83 4 100 3 41 70

TC =

V

TM

(1) (5)

Volt s

TC =

25 °C

V

(2) (6)

(15) (18)

(19)

Volt s

TC =

25 °C 60/50 Hz

GT

I

HIGTM

(1) (8)

(12)

mAmps

(14)

Amps

P

Watts Watts

GM

(14)

P

G(AV)

I

TSM

(9) (13)

Amps

dv/dt(c) dv/dt

(1) (4) (13)

Vol ts/µS ec

(1)

Volts/ µSec

TC=

100 °C

TC=

125 °C

t

gt

(10)

µSec Amp

I2t di/dt

2

Sec Amps/µSec

See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.

Triacs Data Sheets

I

T(RMS)

(4) (16)

MT1

MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP MAX

10 A

15 A

25 A

35 A

Isolated Non-isolated

MT2

T

Gate

TO-3

Fastpak TO-220 TO -202 TO-220

Q6025P5 600 505050 1200.1 5

Q8025P5 800 505050 1200.1 5

Q6035P5 600 50 50 50 120 0.1 5

Q8035P5 800 50 50 50 120 0.1 5

MT1

MT2

Q2010L4 Q2010R4 Q2010N4 200 25 25 25 50 0.05 1

Q4010L4 Q4010R4 Q4010N4 400 25 25 25 50 0.05 1

Q6010L4 Q6010R4 Q6010N4 600 25 25 25 50 0.05 1

Q8010L4 Q8010R4 Q8010N4 800 25 25 25 50 0.1 1

QK010L4 QK010R4 QK010N4 1000 25 25 25 50 0.1 3

Q2010L5 Q2010F51 Q2010R5 Q2010N5 200 50 50 50 75 0.05 0.5 2

Q4010L5 Q4010F51 Q4010R5 Q4010N5 400 50 50 50 75 0.05 0.5 2

Q6010L5 Q6010F51 Q6010R5 Q6010N5 600 50 50 50 75 0.05 0.5 2

Q8010L5 Q8010R5 Q8010N5 800 50 50 50 75 0.1 0.5 2

QK010L5 QK010R5 QK010N5 1000 50 50 50 75 0.1 3

Q2015L5 Q2015R5 Q2015N5 200 50 50 50 0.05 0.5 2

Q4015L5 Q4015R5 Q4015N5 400 50 50 50 0.05 0.5 2

Q6015L5 Q6015R5 Q6015N5 600 50 50 50 0.05 0.5 2

Q8015L5 Q8015R5 Q8015N5 800 50 50 50 0.1 1 3

QK015L5 QK015R5 QK015N5 1000 50 50 50 0.1 3

MT1

MT2

G

MT2

MT1

G

MT1

MT2

Q2025R5 Q2025N5 200 50 50 50 0.1 1 3

Q4025R5 Q4025N5 400 50 50 50 0.1 1 3

Q6025R5 Q6025N5 600 50 50 50 0.1 1 3

Q8025R5 Q8025N5 800 50 50 50 0.1 1 3

QK025R5 QK025N5 1000 50 50 50 0.1 3

TO-263

2

D

Pak

MT2

V

DRM

(1)

G

Volt s

QI QII QIII QIV QIV

I

GT

(3) (7) (15)

mAmps

T

C

25 °C

(1) (16)

mAmps

=

100 °C

Part Number

I

DRM

TC =

125 °C

— Repetitive peak blocking voltage

Specific Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 200 mA with

dv/dt — Critical rate-of-rise of off-state voltage at rated V

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

2

I

DRM

I

GT

I

GTM

I

H

I

T(RMS)

I

TSM

P

µs rise time

≤0.1

gate open

DRM

and I

commutating di/dt = 0.54 rated I

T(RMS)

/ms; gate

DRM

unenergized

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

— Peak off-state current, gate open; V

= maximum rated value

DRM

— DC gate trigger current in specific operating quadrants;

V

= 12 V dc

D

— Peak gate trigger current

— Holding current (DC); gate open

— RMS on-state current conduction angle of 360°

— Peak one-cycle surge

— Average gate power dissipation

G(AV)

— Peak gate power dissipation; I

GM

≤ I

GT

GTM

V

DRM

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω

V

GT

— Peak on-state voltage at maximum rated RMS current

V

TM

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless specified otherwise.

• Operating temperature range (T

) is -65 °C to +125 °C for TO-92,

J

-25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other devices.

• Storage temperature range (T

) is -65 °C to +150 °C for TO-92,

S

-40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other devices.

• Lead solder temperature is a maximum of 230 °C for 10 seconds, maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T

) is measured as shown on the dimen-

C

sional outline drawings. See “Package Dimensions” section of this catalog.

tgt — Gate controlled turn-on time; IGT = 200 mA with 0.1 µs rise time

Data Sheets Triacs

V

TM

(1) (5)

Vol ts

T

= 25 °C TC = 25 °C 60/50 Hz

C

MAX MAX MAX TYP MIN TYP

1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 100 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 75 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 50 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 300 200 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 250 175 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 150 3 60 70

1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 350 225 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 300 200 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 200 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 350 225 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 300 200 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 200 4 166 100

1.4 2.75 50 2 20 0.5 250/220 5 550 475 3 260 100

1.4 2.75 50 2 20 0.5 250/220 5 450 400 3 260 100

1.5 2.75 50 2 20 0.5 350/300 5 550 475 3 508 100

1.5 2.75 50 2 20 0.5 350/300 5 450 400 3 508 100

V

GT

(2) (6) (15)

(18) (19)

Vol ts

I

H

(1) (8) (12)

mAmps

I

GTM

(14)

Amps

P

(14)

Watts Watts

GM

P

G(AV)

I

TSM

(9) (13)

Amps

dv/dt(c) dv/dt

(1) (4) (13)

Volt s/ µSec

T

=

C

100 °C

(1)

TC =

125 °C

t

gt

(10) (17)

µSec Amps

I2t di/dt

2

Sec Amps/µSec

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage (V

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E2.1 through Figure E2.7 for current rating at specific

) with reference to MT1

GT

(15) RL = 60 Ω for 0.8 A to10 A triacs; RL = 30 Ω for 15 A to 35 A triacs

= TJ for test conditions in off state

(16) T

C

= 300 mA for 25 A and 35 A devices

(17) I

GT

(18) Quadrants I, II, III only

(19) Minimum non-trigger V

at 125 °C is 0.2 V for all except 50 mA

GT

MAX QIV devices which are 0.2 V at 110 °C.

operating temperature.

(5) See Figure E2.8 through Figure E2.10 for i

versus v

T

.

(6) See Figure E2.12 for VGT versus TC.

(7) See Figure E2.11 for I

(8) See Figure E2.14 for I

versus TC.

GT

versus TC.

H

(9) See Figure E2.13 for surge rating with specific durations.

(10) See Figure E2.15 for t

versus IGT.

gt

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,

400 mA dc for 15 A to 35 A devices

(13) See Figure E2.1 through Figure E2.6 for maximum allowable case

temperature at maximum rated current.

(14) Pulse width ≤10

µs; IGT ≤ I

GTM

Gate Characteristics

Teccor triacs may be turned on between gate and MT1 terminals in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses

However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If positive pulses are required, see “Sensitive Triacs” section of this catalog or contact the factory. Also, see Figure AN1002.8, “Amplified Gate” Thyristor Circuit.

Triacs Data Sheets

In all cases, if maximum surge capability is required, pulses should be a minimum of one magnitude above I

rating with a

GT

steep rising waveform (≤1 µs rise time).

ALL POLARITIES ARE REFERENCED TO MT1

MT2 POSITIVE

(Positive Half Cycle)

MT2

(-)

I

GT

GATE

MT1

I

GT

GATE

REF

MT2

MT1

REF

I

-

GT

(-)

+

(+)

QII

QI QIV

QIII

(+)

-

MT2 NEGATIVE

(Negative Half Cycle)

I

GT

GATE

I

GT

GATE

MT2

REF

MT2

REF

MT1

+

I

GT

Electrical Isolation

Teccor’s isolated triac packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab or base, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

TO-220

Isolated

2500 Standard Standard

4000 Optional ** N/A

* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.

Fastpak Isolated

Definition of Quadrants

Thermal Resistance (Steady State)

R

[R

θ JC

Package Code PECFF2LR D V N

] (TYP.) °C/W

θ JA

Typ e

TO-3

Fastpak TO-92

Compak

TO-202

Type 1

TO-202

Type 2

TO-220 Isolated

TO-220

Non-isolated

TO-252

D-Pak

TO-251

V-Pa k

0.8 A 60 [135] 60 *

1 A 50 [95] 40 *

4A 3.5 [45] 6 [70] 3.6 [50] 3.5 6.0 [70]

6 A 3.8 3.3 1.8 [45] 1.8

8A 3.3 2.8 1.5 1.5

10 A 3.5 2.6 1.3 1.3

15 A 2.1 1.1 1.1

25 A 1.6 0.89 0.89

35 A 1.5

* Mounted on 1 cm

2

copper foil surface; two-ounce copper foil

TO-263

2

D

Pak

Data Sheets Triacs

C

130

˚

) –

C

120

110

100

90

80

70

60

0

Maximum Allowable Case Temperature (T

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

RMS On-state Current [l

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

1 A

0.8 A

] – AMPS

T(RMS)

˚

130

) – ˚C

C

120

110

100

90

80

70

60

0

Maximum Allowable Case Temperature (T

02468101214

10 A TO-202

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

RMS On-state Current [l

10 A TO-220 (Non-isolated)

2

10 A D

Pak

˚

] – Amps

T(RMS)

Figure E2.1 Maximum Allowable Case Temperature versus On-state

Current (0.8 A and 1 A)

C

130

˚

) –

C

120

110

100

4 A TO-202 (TYPE 2 and 4)

90

4 A TO-251

80

4 A TO-220 (Isolated) 4 A TO-202 (Type 1 and 3) 4 A TO-252

70

60

0

Maximum Allowable Case Temperature (T

01234567

6 A TO-220 (Non-isolated)

2

Pak

6 A D

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

RMS On-state Current [l

6 A TO-220 (Isolated) 6 A TO-202

] – Amps

T(RMS)

˚

Figure E2.2 Maximum Allowable Case Temperature versus On-state

Current (4 A and 6 A)

130

) – ˚C

C

120

110

100

Maximum Allowable Case Temperature (T

8 A TO-202 8 A TO-220 (Isolated)

90

80

70

60

0

02468101214

10 A TO-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

RMS On-state Current [l

8 A TO-220 (Non-isolated)

2

8 A D

Pak

˚

] – AMPS

T(RMS)

Figure E2.3 Maximum Allowable Case Temperature versus

On-state Current (8 A and 10 A)

Figure E2.4 Maximum Allowable Case Temperature versus

On-state Current (10 A)

130

) – ˚C

C

120

110

100

90

80

70

60

0

Maximum Allowable Case Temperature (T

15 A TO-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

051015

RMS On-state Current [l

15 A TO-220 (Non-isolated)

2

15 A D

Pak

˚

] – AMPS

T(RMS)

Figure E2.5 Maximum Allowable Case Temperature versus

On-state Current (15 A)

130

120

) – ˚C

C

110

100

90

25 A TO-3 Fastpak

80

35 A TO-3 Fastpak

70

60

Maximum Allowable Case Temperature (T

50

0 1020304050

RMS On-state Current [l

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

25 A TO-220 (Non-isolated)

2

Pak

25 A D

] – Amps

T(RMS)

Figure E2.6 Maximum Allowable Case Temperature versus

On-state Current (25 A and 35 A)

Triacs Data Sheets

120

) — ˚C

A

100

80

60

1 A TO-92

40

0.8 A TO-92 25 20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Maximum Allowable Ambient Temperature (T

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING – NO HEATSINK

TO-202 (TYPE 2 and 4) TO-251

TO-220 Devices and TO-202 (Type 1 and 3)

] — Amps

T (RMS)

˚

Figure E2.7 Maximum Allowable Ambient Temperature versus

On-state Current

10

9

) – Amps

T

8

7

6

5

4

3

2

1

Positive or Negative Instantaneous On-state Current (i

0

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T

= 25 ˚C

C

1 A

0.8 A

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Figure E2.8 On-state Current versus On-state Voltage (Typical)

(0.8 A and 1 A)

90

80

70

60

) – Amps

T

50

40

30

On-state Current (i

20

Positive or Negative Instantaneous

10

0

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

TC = 25 ˚C

15 A and 25 A Fastpak

15 A and 25 A

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Figure E2.10 On-state Current versus On-state Voltage (Typical)

(15 A and 25 A)

4.0

3.0

= 25 ˚C)

GT

I

C

(T

2.0

GT

I

Ratio of

1.0

-65 -40 -15 +25 +65 +125

Case Temperature (TC) – ˚C

Figure E2.11 Normalized DC Gate Trigger Current for All Quadrants

versus Case Temperature

20

18

16

14

12

) – Amps

T

10

8

6

On-state Current (i

4

Positive or Negative Instantaneous

2

0

TC = 25 ˚C

6-10 A

4A

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Figure E2.9 On-state Current versus On-state Voltage (Typical)

(4 A, 6 A, 8 A, and 10 A)

Figure E2.12 Normalized DC Gate Trigger Voltage for All Quadrants

2.0

1.5

= 25 ˚C)

GT

C

V

(T

1.0

GT

V

Ratio of

.5

0

-65 -15-40 +25 +65 +125

Case Temperature (TC) – ˚C

versus Case Temperature

Data Sheets Triacs

1000

400

300

) – Amps

200

TSM

120 100

80

60 50 40

30

20

10

Peak Surge (Non-repetitive) On-state Current (l

1

1 10 100 1000

Surge Current Duration – Full Cycles

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [l Rated Value at Specified Case Temperature

1) Gate control may be lost during and

NOTES:

immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

T(RMS)

]: Maximum

35 A Fastpak

25 A Fastpak

25 A TO

15 A

10 A

8 A

6 A

4 A

1 A

0.8 A

-220

Figure E2.13 Peak Surge Current versus Surge Current Duration

H

I

Ratio of

4.0

INITIAL ON-STATE CURRENT = 200 mA DC 0.8 A - 10 A Devices

3.0

= 25 ˚C)

C

(T

2.0

H

I

1.0

-65 -40 -15 +25 +65 +125

= 400 mA DC 15 A - 25 A Devices

Case Temperature (TC) – ˚C

8

7

6

) – µSec

gt

5

4

3

2

Typical Turn-on Time (t

1

0

0 25 50 75 100 125 150 175 200 225 250 275 300

Devices with

l

= 10 mA

GT

l

GT

Devices with

= 25 mA

l

GT

TC = 25 ˚C

= 50 mA

DC Gate Trigger Current (lGT) – mA

Figure E2.14 Normalized DC Holding Current versus Case Temperature Figure E2.15 Turn-on Time versus Gate Trigger Current (Typical)

Triacs Data Sheets

4.0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

1.5

CONDUCTION ANGLE: 360˚

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

3.0

1.0

] – Watts

D(AV)

[P

0.5

0.8 A

1 A

Average On-state Power Dissipation

0

0 0.25 0.50 0.75 1.0 1.25

RMS On-state Current [I

T(RMS)

] – Amps

Figure E2.16 Power Dissipation (Typical) versus On-state Current

(0.8 A and 1 A)

18

16

] – Watts

14

D(AV)

12

10

8

6

4

2

0

Average On-state Power Dissipation [P

012345678910111213141516

6-10 A

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

RMS On-state Current [l

15 A

T(RMS)

] – Amps

Figure E2.17 Power Dissipation (Typical) versus On-state Current

(6 A to 10 A and 15 A)

2.0

] – Watts

D(AV)

[P

1.0

4 A

Average On-state Power Dissipation

0

0 1.0 2.0 3.0 4.0

RMS On-state Current [I

T(RMS)

] – Amps

Figure E2.19 Power Dissipation (Typical) versus RMS On-state Current

(4 A)

45

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

40

] – Watts

CONDUCTION ANGLE: 360˚

D(AV)

35

30

25

20

15

10

5

0

Average On-state Power Dissipation [P

0 8 16 24 32 40

RMS On-state Current [l

25 A

25 A - 35 A Fastpaks

] – Amps

T(RMS)

Figure E2.18 Power Dissipation (Typical) versus On-state Current

(25 A to 35 A)

File #E71639

U.L. RECOGNIZED

E3

TO-220

Isolated

MT2 MT1

T

Internally Triggered Triacs (4 A to 15 A)

E3

General Description

Te cc o r’ s Quadrac devices are triacs that include a diac trigger mounted inside the same package. This device, developed by Teccor, saves the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network.

The Quadrac device is a bidirectional AC switch and is gate controlled

for either polarity of main terminal voltage. Its primary purpose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required.

Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the TO-220 package.

The TO-220 package is electrically isolated to 2500 V rms from the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus eliminating the need for separate insulators and insulator-mounting steps and saving dollars over “hot tab” devices.

Quadrac

All Teccor triac and diac chips have glass-passivated junctions to ensure long-term device reliability and parameter stability.

Variations of devices in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• Glass-passivated junctions

• Electrically-isolated package

• Internal trigger diac

• High surge capability — up to 200 A

• High voltage capability — 200 V to 600 V

Quadrac Data Sheets

I

T(RMS)

(5)

See “Package Dimensions” section

for variations. (12) MIN MAX MAX MAX MIN MAX MIN MAX MAX

4A

6A

8A

10 A

15 A

Isolated ∆V

T

MT1

MT2

TO-220

Q2004LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4004LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6004LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q2006LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q2008LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4008LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6008LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4008LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6008LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q2010LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q2015LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4015LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6015LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4015LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6015LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

V

Vol ts

DRM

(1)

T

C

25 °C

I

DRM

(1) (10)

mAmps

=

TC =

100 °C

TC =

125 °C T

V

TM

(1) (3)

Volts

= 25 °C

C

Part No.

Trigger Diac Specifications (T–MT1)

(7)

Volt s

BO

V

BO

(6)

Vol ts

[∆V± ]IBOC

(6)

Volts µAmps

T

(11)

µFarads

— Repetitive peak blocking voltage

V

Specific Test Conditions

[∆V±] — Dynamic breakback voltage (forward and reverse) ∆V

— Breakover voltage symmetry

BO

— Trigger firing capacitance

C

T

di/dt — Maximum rate-of-change of on-state current dv/dt — Critical rate-of-rise of off-state voltage at rated V dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

and I

commutating di/dt = 0.54 rated I

T(RMS)

unenergized

2

I

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

— Peak breakover current

BO

I

— Peak off-state current gate open; V

DRM

I

— Peak gate trigger current (10 µs Max)

GTM

I

— Holding current; gate open

H

I

— RMS on-state current, conduction angle of 360°

T(RMS)

I

— Peak one-cycle surge

TSM

t

— Gate controlled turn-on time

gt

V

— Breakover voltage (forward and reverse)

BO

= maximum rated value

DRM

/ms; gate

gate open

DRM

V

— Peak on-state voltage at maximum rated RMS current

TM

General Notes

• All measurements are made at 60 Hz with resistive load at an ambi-

ent temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

• Storage temperature range (T

) is -40 °C to +125 °C.

J

) is -40 °C to +125 °C.

S

• Lead solder temperature is a maximum of +230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T

) is measured as shown on dimensional

C

outline drawings. See “Package Dimensions” section of this catalog.

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1

(2) See Figure E3.1 for I

(3) See Figure E3.4 and Figure E3.5 for i

versus TC.

H

versus vT.

T

(4) See Figure E3.9 for surge ratings with specific durations.

Data Sheets Quadrac

I

H

(1) (2)

mAmps

MAX 60/50Hz MIN MIN TYP

40 55/46 3 75 50 3 12.5 1.2 50

40 55/46 3 50 50 3 12.5 1.2 50

50 80/65 4 150 100 3 26.5 1.5 70

50 80/65 4 125 85 3 26.5 1.5 70

50 80/65 25 575 450 3 26.5 1.5 70

50 80/65 25 425 350 3 26.5 1.5 70

60 100/83 4 175 120 3 41 1.5 70

60 100/83 4 150 100 3 41 1.5 70

60 100/83 25 575 450 3 41 1.5 70

60 100/83 25 425 350 3 41 1.5 70

60 120/100 4 200 150 3 60 1.5 70

60 120/100 4 175 120 3 60 1.5 70

60 120/100 30 925 700 3 60 1.5 70

60 120/100 30 775 600 3 60 1.5 70

70 200/167 4 300 200 3 166 1.5 100

70 200/167 4 200 150 3 166 1.5 100

70 200/167 30 925 700 3 166 1.5 100

70 200/167 30 775 600 3 166 1.5 100

I

TSM

(4) (8)

Amps

dv/dt(c) dv/dt

(1) (5) (8)

Volts/ µSec

Volt s/ µSec

T

=

C

100 °C

(1)

TC =

125 °C

t

gt

(6) (9)

µSec Amps

I2t

2

Sec Amps

I

GTM

di/dt

(9)

Amps/µSec

(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at

specific operating temperature.

(6) See Figure E3.2 and Figure E3.3 for test circuit. (7) ∆V

= [+ VBO] - [- VBO]

BO

(8) See Figure E3.7 and Figure E3.8 for maximum allowable case

temperature at maximum rated current. (9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time (10) T

= TJ for test conditions in off state

C

(11) Maximum required value to ensure sufficient gate current (12) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

Electrical Isolation

All Teccor isolated Quadrac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

Electrical Isolation

from Leads to Mounting Tab *

V AC RMS TYPE

2500 Standard

4000 Optional **

* UL Recognized File #E71639 **For 4000 V isolation, use “V” suffix in part number.

Thermal Resistance (Steady State)

[R

R

θJC

TYPE Isolated TO-220

4A 3.6 [50]

6A 3.3

8A 2.8

10 A 2.6

15 A 2.1

] °C/W (TYP)

θJA

Quadrac Data Sheets

INITIAL ON-STATE CURRENT = 200 mA DC 4 A to 10 A = 400 mA DC 15 A

20

2.0

1.5

H

I

= 25 ˚C)

1.0

C

(T

H

I

.5

Ratio of

0

-40 -15 +25 +65 +105

+125

Case Temperature (TC) – ˚C

Figure E3.1 Normalized DC Holding Current versus Case Temperature

18

16

) – Amps

T

14

12

10

8

Positive or Negative

6

4

2

Instantaneous On-state Current (i

0

0 0.6 0.8 1.0 1.2 1.4 1.6

Figure E3.4 On-state Current versus On-state Voltage (Typical)

TC = 25 ˚C

6 A, 8 A, and 10 A

Instantaneous On-state Voltage (v

Positive or Negative

4 A

) – Volts

T

(4 A to 10 A)

90

80

) – Amps

T

70

60

50

40

30

Positive or Negative

20

10

Instantaneous On-state Current (i

0

TC = 25˚C

0.6

0.8

Instantaneous On-state Voltage (v

Positive or Negative

15 A

1.4

1.2

1.0

) – Volts

T

1.8

1.6

120 V 60 Hz

R

L

D.U.T.

MT2

T

V

C

T

= 0.1 µF

MT1

Figure E3.2 Test Circuit

V

C

+V

BO

-V

BO

Figure E3.3 Test Circuit Waveforms

∆V+

∆V-

Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)

120

) – ˚C

A

100

4 A

80

60

40

25

Maximum Allowable Ambient Temperature (T

20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

RMS On-state Current [I

T(RMS)

] – Amps

Figure E3.6 Maximum Allowable Ambient Temperature versus

On-state Current

Data Sheets Quadrac

130

) – ˚C

120

C

110

100

90

80

70

600

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawings

˚

4 A

Maximum Allowable Case Temperature (T

0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

RMS On-state Current [I

T(RMS)

] – Amps

Figure E3.7 Maximum Allowable Case Temperature versus

On-state Current (4 A)

130

) – ˚C

120

C

110

100

90

80

70

60

Maximum Allowable Case Temperature (T

0

6 A

8 A

0

2.0

4.0

6.0

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawings

15 A

10 A

10.0

12.0

T(RMS)

14.0

] – Amps

8.0

16.0

˚

18.0

Figure E3.8 Maximum Allowable Case Temperature versus

On-state Current (6 A to 15 A)

20.0

4.0

] – Watts

3.0

D(AV)

2.0

1.0

Average On-state Power Dissipation [P

0

1.0

RMS On-state Current [I

4 A

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

2.0

3.0

T(RMS)

4.0

] – Amps

5.0

Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)

18

16

] – Watts

14

D(AV)

12

10

8

6

4

2

6 A to 10 A

Average On-state Power Dissipation [P

0

2

6

4

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360

8

10

T(RMS)

15 A

12

] – Amps

˚

16

14

Figure E3.11 Power Dissipation (Typical) versus On-state Current

(6 A to 10 A and 15 A)

200

120 100

80

60 50 40

) – Amps

30

TSM

20

10

8 6

5 4

Peak Surge (Non-repetitive)

On-state Current (I

3

SUPPLY FREQUENCY: 60 Hz Sinusoidal

2

LOAD: Resistive RMS ON-STATE CURRENT [I Rated Value at Specified Case Temperature

1

1 2 3 4 5 6 8 10 20 3040 60 80 100 200 300 600 1000

T(RMS)

]: Maximum

Surge Current Duration – Full Cycles

Figure E3.9 Peak Surge Current versus Surge Current Duration

NOTES:

1) Gates control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady state rated value.

15 A

10 A

8 A

6 A

4 A

+4

+2

0

Change – %

BO

-2

-4

-6

-8

Percentage of V

-40 -20 0 +20 +40 +60 +80 +100 +120

Junction Temperature (TJ) – ˚C

Figure E3.12 Normalized diac V

versus Junction Temperature

BO

+140

Notes

Selected Packages*

File #E71639

U.L. RECOGNIZED

E4

*TO-218

TO-263

2

D

Pak

*TO-220

TO-252

D-Pak

*TO-218X

Alternistor Triacs

E4

General Description

Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III.

This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.

All alternistors have glass-passivated junctions to ensure longterm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination.

Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms

.

TO-251

V-Pak

MT2 MT1

G

(6 A to 40 A)

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.

Features

• High surge current capability

• Glass-passivated junctions

• 2500 V ac isolation for L, J, and K Packages

• High commutating dv/dt

• High static dv/dt

Alternistor Triacs Data Sheets

I

T(RMS)

(4)(16)

Isolated Non-isolated

MT1

MT2

G

MT1

MT2

G

MT1

MT2

G

MT2

TO-251

T0-220 TO-220

V-Pa k

MT1

TO-252

D-Pak

MT2

G

TO-263

2

D

Pak

MAX See “Package Dimensions” section for variations. (11) MIN MAX MAX

Q2006VH3 Q2006DH3 200 10 10 10 0.01 0.5 2

Q4006VH3 Q4006DH3 400 10 10 10 0.01 0.5 2

Q6006VH3 Q6006DH3 600 10 10 10 0.01 0.5 2

Q8006VH3 Q8006DH3 800 10 10 10 0.01 0.5 2

QK006VH3 QK006DH3 1000 10 10 10 0.02 2

Q2006VH4 Q2006DH4 200 35 35 35 0.01 0.5 2

6A

Q4006VH4 Q4006DH4 400 35 35 35 0.01 0.5 2

Q6006VH4 Q6006DH4 600 35 35 35 0.01 0.5 2

Q8006VH4 Q8006DH4 800 35 35 35 0.01 0.5 2

QK006VH4 QK006DH4 1000 35 35 35 0.02 2

Q2006LH4 Q2006RH4 Q2006NH4 200 35 35 35 0.01 0.5 2

Q4006LH4 Q4006RH4 Q4006NH4 400 35 35 35 0.01 0.5 2

Q6006LH4 Q6006RH4 Q6006NH4 600 35 35 35 0.01 0.5 2

Q8006LH4 Q8006RH4 Q8006NH4 800 35 35 35 0.01 0.5 2

QK006LH4 QK006RH4 QK006NH4 1000 35 35 35 0.02 3

Q2008VH3 Q2008DH3 200 10 10 10 0.01 0.5 2

Q4008VH3 Q4008DH3 400 10 10 10 0.01 0.5 2

Q6008VH3 Q6008DH3 600 10 10 10 0.01 0.5 2

Q8008VH3 Q8008DH3 800 10 10 10 0.01 0.5 2

QK008VH3 QK008DH3 1000 10 10 10 0.02 2

Q2008VH4 Q2008DH4 200 35 35 35 0.01 0.5 2

8A

Q4008VH4 Q4008DH4 400 35 35 35 0.01 0.5 2

Q6008VH4 Q6008DH4 600 35 35 35 0.01 0.5 2

Q8008VH4 Q8008DH4 800 35 35 35 0.01 0.5 2

QK008VH4 QK008DH4 1000 35 35 35 0.02 2

Q2008LH4 Q2008RH4 Q2008NH4 200 35 35 35 0.01 0.5 2

Q4008LH4 Q4008RH4 Q4008NH4 400 35 35 35 0.01 0.5 2

Q6008LH4 Q6008RH4 Q6008NH4 600 35 35 35 0.01 0.5 2

Q8008LH4 Q8008RH4 Q8008NH4 800 35 35 35 0.01 0.5 2

QK008LH4 QK008RH4 QK008NH4 1000 35 35 35 0.02 3

Q2010LH5 Q2010RH5 Q2010NH5 200 50 50 50 0.01 0.5 2

10 A

Q4010LH5 Q4010RH5 Q4010NH5 400 50 50 50 0.01 0.5 2

Q6010LH5 Q6010RH5 Q6010NH5 600 50 50 50 0.01 0.5 2

Q8010LH5 Q8010RH5 Q8010NH5 800 50 50 50 0.01 0.5 2

QK010LH5 QK010RH5 QK010NH5 1000 50 50 50 0.02 3

Q2012LH5 Q2012RH5 Q2012NH5 200 50 50 50 0.01 0.5 2

12 A

Q4012LH5 Q4012RH5 Q4012NH5 400 50 50 50 0.01 0.5 2

Q6012LH5 Q6012RH5 Q6012NH5 600 50 50 50 0.01 0.5 2

Q8012LH5 Q8012RH5 Q8012NH5 800 50 50 50 0.01 0.5 2

QK012LH5 QK012RH5 QK012NH5 1000 50 50 50 0.02 3

MT1

MT2

V

DRM

(1)

G

I

GT

(3) (7) (15) (17)

mAmps

T

Volt s

QI QII QIII

C

25 °C

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

Part Number

I

DRM

(1) (18)

mAmps

=

TC =

100 °C

TC =

125 °C

Data Sheets Alternistor Triacs

V

GT

(2) (6)

(15) (17)

(20)

Volt s

T

= 25 °C 60/50 Hz TC = 100 °C TC = 125 °C

C

MAX MAX MAX MIN MIN TYP

1.3 1.6 15 1.6 18 0.4 65/55 20 100 75 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 75 50 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 50 40 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 40 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 500 400 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 400 300 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 300 200 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 150 4 17.5 70

1.3 1.6 35 1.6 18 0.5 85/80 25 750 600 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 100 75 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 75 50 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 50 40 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 40 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 750 400 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70

1.3 1.6 35 2 20 0.5 100/83 25 500 400 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 400 300 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 300 200 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 150 4 41 70

1.3 1.6 50 2 20 0.5 120/110 30 1150 1000 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1150 1000 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70

V

TM

(1) (5)

Volt s

I

H

(1) (8)

(12)

mAmps

I

GTMPGMPG(AV)

(14)

Amps

Watts Watts

I

TSM

(9) (13)

Amps

dv/dt(c) dv/dt

(1) (4) (13)

Volt s/ µSec

(1)

Volt s/ µSec

t

gt

(10)

µSec Amps

I2t di/dt

2

Sec

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

(19)

Amps/µSec

Alternistor Triacs Data Sheets

I

T(RMS)

(4)(16)

MT1

T0-220

MT2

G

Isolated Non-isolated

A

K

G

A

K

G

A

MT1

MT2

G

TO-218

(16) TO-218X TO-220

MT1

TO-263

2

D

Pak

MT2

MAX See “Package Dimensions” section for variations. (11) MAX

Q2016LH3 Q2016RH3 Q2016NH3 200 20 20 20

Q4016LH3 Q4016RH3 Q4016NH3 400 20 20 20

Q6016LH3 Q6016RH3 Q6016NH3 600 20 20 20

Q8016LH3 Q8016RH3 Q8016NH3 800 20 20 20

QK016LH3 QK016RH3 QK016NH3 1000 20 20 20

Q2016LH4 Q2016RH4 Q2016NH4 200 35 35 35

Q4016LH4 Q4016RH4 Q4016NH4 400 35 35 35

16 A

Q6016LH4 Q6016RH4 Q6016NH4 600 35 35 35

Q8016LH4 Q8016RH4 Q8016NH4 800 35 35 35

QK016LH4 QK016RH4 QK016NH4 1000 35 35 35

Q2016LH6 Q2016RH6 Q2016NH6 200 80 80 80

Q4016LH6 Q4016RH6 Q4016NH6 400 80 80 80

Q6016LH6 Q6016RH6 Q6016NH6 600 80 80 80

Q8016LH6 Q8016RH6 Q8016NH6 800 80 80 80

QK016LH6 QK016RH6 QK016NH6 1000 80 80 80

Q2025L6 Q2025K6 Q2025J6 Q2025R6 Q2025NH6 200 80 80 80

25 A

Q4025L6 Q4025K6 Q4025J6 Q4025R6 Q4025NH6 400 80 80 80

Q6025L6 Q6025K6 Q6025J6 Q6025R6 Q6025NH6 600 80 80 80

Q8025L6 Q8025K6 Q8025J6 Q8025R6 Q8025NH6 800 80 80 80

QK025L6 QK025K6 QK025R6 QK025NH6 1000 80 80 80

Q2030LH5 200 50 50 50

30 A

Q4030LH5 400 50 50 50

Q6030LH5 600 50 50 50

Q2035RH5 Q2035NH5 200 50 50 50

35 A

Q4035RH5 Q4035NH5 400 50 50 50

Q6035RH5 Q6035NH5 600 50 50 50

Q2040K7 Q2040J7 200 100 100 100

Q4040K7 Q4040J7 400 100 100 100

40 A

Q6040K7 Q6040J7 600 100 100 100

Q8040K7 Q8040J7 800 100 100 100

QK040K7 1000 100 100 100

V

DRM

(1)

G

Volt s

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

Part Number

I

GT

(3) (7) (15) (17)

mAmps

QI QII QIII

I

— Holding current (DC); gate open

Test Conditions

di/dt — Maximum rate-of-change of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated V

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

and I

commutating di/dt = 0.54 rated I

T(RMS)

unenergized

2

I

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

— Peak off-state current gate open; V

I

DRM

I

— DC gate trigger current in specific operating quadrants;

GT

= 12 V dc

V

D

— Peak gate trigger current

I

GTM

= maximum rated value

DRM

/ms; gate

gate open

DRM

H

— RMS on-state current conduction angle of 360°

I

T(RMS)

I

— Peak one-cycle surge

TSM

— Average gate power dissipation

P

G(AV)

— Peak gate power dissipation; I

P

GM

≤ I

GT

GTM

tgt — Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time

— Repetitive peak blocking voltage

V

DRM

— DC gate trigger voltage; VD = 12 V dc

V

GT

V

— Peak on-state voltage at maximum rated RMS current

TM

Data Sheets Alternistor Triacs

I

DRM

(1) (18)

mAmps

T

=

TC =

C

25 °C

100 °C

0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 500 400 3 166 100

0.05 0.5 27 1.5 1.6 35 2 20 0.5 200/167 20 400 350 3 166 100

0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 300 250 3 166 100

0.1 1 3 1.5 1.6 35 2 20 0.5 200/167 20 275 200 3 166 100

0.1 3 1.5 1.6 35 2 20 0.5 200/167 20 200 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 650 500 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 600 475 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 500 400 3 166 100

0.1 1 3 2 1.6 50 2 20 0.5 200/167 25 425 350 3 166 100

0.1 3 2 1.6 50 2 20 0.5 200/167 25 300 3 166 100

0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 875 600 5 166 100

0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 800 520 5 166 100

0.1 1 3 2.5 1.6 70 2 20 0.5 200/167 30 700 475 5 166 100

0.1 3 2.5 1.6 70 2 20 0.5 200/167 30 350 5 166 100

0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 875 600 5 259 100

0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 800 520 5 259 100

0.1 1 3 2.5 1.8 100 2 20 0.5 250/208 30 700 475 5 259 100

0.1 3 2.5 1.8 100 2 20 0.5 250/208 30 400 5 259 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 650 500 3 508 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 600 475 3 508 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 500 400 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 650 500 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 600 475 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 500 400 3 508 100

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 11 00 700 5 664 150

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 1000 625 5 664 150

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 900 575 5 664 150

0.2 5 2.5 1.8 120 4 40 0.8 400/335 50 500 5 664 150

TC =

125 °C

MAX MAX MAX MAX MIN MIN TYP

V

GT

(2) (6)

(15) (17)

(20)

Vol ts

TC =

25 °C

V

TMIH

(1) (5)

(1) (8)

Vol ts

TC =

mAmps

25 °C 60/50 Hz

(12)

I

GTM

(14)

Amps

P

Watts Watts

GM

(14)

P

G(AV)

I

TSM

(9) (13)

Amps

dv/dt(c) dv/dt

(1) (4) (13)

Vol ts/µS ec

(1)

Vol ts/µSec

TC =

100 °C

TC =

125 °C

t

gt

(10)

µSec Amps

I2t di/dt

(19)

2

Sec

Amps/µSec

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless specified otherwise.

• Operating temperature range (T

• Storage temperature range (T

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum ≥1/16" (1.59 mm) from case.

• The case temperature (T

sional outline drawings. See “Package Dimensions” section.

) is -40 °C to +125 °C.

J

) is -40 °C to +125 °C.

S

) is measured as shown in the dimen-

C

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage (V

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E4.1 through Figure E4.4 for current rating at specific

operating temperature and Figure 4.16 for free air rating (no heat sink).

(5) See Figure E4.5 and Figure E4.6 for i

(6) See Figure E4.7 for V

(7) See Figure E4.8 for I

(8) See Figure E4.9 for

versus TC.

GT

versus TC.

GT

IH versus TC.

) with reference to MT1

GT

and vT.

T

(9) See Figure E4.10 and Figure E4.11 for surge rating with specific

durations.

Alternistor Triacs Data Sheets

(10) See Figure E4.12 for tgt versus IGT.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) Initial on-state current = 400 mA dc for 16 A to 40 A devices and

100 mA for 6 A to 12 A devices.

(13) See Figure E4.1 through Figure E4.4 for maximum allowable case

temperature at maximum rated current.

(14) Pulse width ≤10 µs;

IGT ≤ I

GTM

(15) For 6 A to 12 A devices, RL = 60 Ω; 16 A and above, RL = 30 Ω

(16) 40 A pin terminal leads on K package can run 100 °C to 125 °C.

(17) Alternistor does not turn on in Quadrant IV.

(18) T

= T

for test conditions in off state

C

J

= 200 mA for 6 A to 12 A devices and 500 mA for 16 A to 40 A

(19) I

GT

devices with gate pulse having rise time of ≤0.1 µs.

(20) Minimum non-trigger V

at 125 °C is 0.2 V.

GT

I

GT

ALL POLARITIES ARE REFERENCED TO MT1

MT2 POSITIVE

(Positive Half Cycle)

MT2

(-)

I

GT

GATE

MT1

-

(-)

REF

MT2

I

GT

GATE

MT1

REF

NOTE: Alternistors will not operate in QIV

+

QII

QI QIV

QIII

-

MT2 NEGATIVE

(Negative Half Cycle)

MT2

(+)

I

GT

GATE

MT1

REF

+ I

MT2

(+)

I

GT

GATE

REF

GT

MT1

Gate Characteristics

Teccor triacs may be turned on in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always negative), using Quadrants II and III with negative gate pulses

In all cases, if maximum surge capability is required, gate pulses should be a minimum of one magnitude above minimum I

rating

GT

with a steep rising waveform (≤1 µs rise time).

If QIV and QI operation is required (gate always positive), see Figure AN1002.8, “Amplified Gate” Thyristor Circuit.

Definition of Quadrants

Electrical Isolation

Teccor’s isolated alternistor packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

2500 4000

Isolated

Standard Standard Standard

N/A Optional ** N/A

* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.

TO-218

TO-220

Isolated

TO-218X

Isolated

Thermal Resistance (Steady State)

R

Package Code KJLRDVN

Typ e

TO-218

Isolated *

6 A 3.3 [50] 1.80 [45] 2.1 2.3 [64] 1.80

8 A 2.8 1.50 1.8 2.1 1.50 10 A 2.6 1.30 1.30 12 A 2.3 1.20 1.20 16 A 2.1 1.10 1.10 25 A 1.35 1.32 2.0 0.87 0.87 30 A 2.3 35 A 0.85 40 A 0.97 0.95

TO-218X Isolated *

θ JC [R θ JA

TO-220

Isolated **

] (TYP.) °C/W

Non-Isolated

TO-220

TO-252

D-Pak

TO-251

V-Pa k

TO-263

2

D

Pak

* UL Recognized Product per UL File E71639 ** For 4000 V isolation, use V suffix in part number.

Data Sheets Alternistor Triacs

C

130

˚

) -

C

120

110

100

90

80

70

60

0

Maximum Allowable Case Temperature (T

6A TO-220

(NON-ISOLATED)

AND D

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing

02468101214

RMS On-State Current [l

10A TO-220 (NON-ISOLATED)

2

AND D

PAK

2

PAK

6A TO-220 (ISOLATED)

12A TO-220 (ISOLATED)

˚

T(RMS)

] - AMPS

130

120

) – ˚C

C

110

100

25 A and 30 A TO-220 (Isolated)

90

80

25 A TO-220 (Non-isolated)

70

60

Maximum Allowable Case Temperature (T

50

TO-218 (Isolated)

TO-263

0 1020304050

RMS On-state Current [l

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

35 A TO-220 (Non-isolated) and TO-263

40 A TO(Isolated)

25

] – Amps

T(RMS)

218

Figure E4.1 Maximum Allowable Case Temperature versus

On-state Current (6 A to 12 A)

130

120

110

) – ˚C

100

C

8 A TO-220 (Isolated)

90

80

70

Temperature (T

Maximum Allowable Case

60

0

8 A TO-220 (Non-isolated), TO-263, TO-251, and TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

02468101214

RMS On-state Current [l

12 A TO-220 (Non-isolated) and TO-263

10 A TO-220 (Isolated)

] – Amps

T(RMS)

Figure E4.2 Maximum Allowable Case Temperature versus

On-state Current (8 A to 12 A)

130

120

C

˚

110

) –

C

100

90

80

CURRENT WAVEFORM: Sinusoidal

70

Maximum Allowable

LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

60

Case Temperature (T

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

0

0 5 10 15

RMS On-state Current [I

16A TO-220 (Non-isolated) and TO-263

16A TO

-220 (Isolated)

˚

] – Amps

T(RMS)

Figure E4.4 Maximum Allowable Case Temperature versus

On-state Current (25 A to 40 A)

20

18

= 25 ˚C

T

C

16

14

) – Amps

12

T

6 A to 12 A Devices

10

8

6

On-state Current (i

4

Positive or Negative Instantaneous

2

0

0 0.6

0.8

1.0 1.2 1.4

Positive or Negative Instantaneous

On-state Voltage (v

) – Volts

T

1.6

Figure E4.5 On-state Current versus On-state Voltage (Typical)

(6 A to 12 A)

90

80

70

60

) – Amps

T

50

40

30

On-state Current (i

Positive or Negative Instantaneous

20

10

0

TC = 25˚C

40 A Devices

25 A to 35 A Devices

16 A Devices

0.6

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

1.0

0.8

1.4

1.2

1.6

1.8

Figure E4.3 Maximum Allowable Case Temperature versus

On-state Current (16 A)

Figure E4.6 On-state Current versus On-state Voltage (Typical)

(16 A to 40 A)

Alternistor Triacs Data Sheets

2.0

1.5

= 25 ˚C)

GT

C

V

(T

1.0

GT

V

.5

Ratio of

0

-65 -15 +65+25 +125-40

Case Temperature (TC) – ˚C

Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants

versus Case Temperature

4.0

3.0

= 25 ˚C)

GT

I

C

(T

2.0

GT

I

1.0

Ratio of

0

-40

-65 -15 +65+25 +125

Case Temperature (TC) – ˚C

200

120 100

80

60 50 40

) – Amps

30

TSM

20

10

8 6

5 4

3

Peak Surge (Non-Repetitive)

On-state Current (I

2

1

10 A to 12 A Devices

8 A TO-251

and TO-252

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I Rated Value at Specified Case Temperature

6 A Devices

8

45

6

3

2

8 A Devices

T(RMS)

10

6 A TO

and TO-252

]: Maximum

20

-251

30

60

40

Notes:

1) Gate control may be lost during and immediately following surge current interval

2) Overload may not be repeated until junction temperature has returned to steady state rated value.

100

80

300

200

Surge Current Duration – Full Cycles

Figure E4.10 Peak Surge Current versus Surge Current Duration

(6 A to 12 A)

1000

400

300

) – Amps

250 200

TSM

100

80

30 A

60 50

40

30

Peak Surge (Non-repetitive)

20

On-state Current (I

10

110

De

Notes:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I Rated Value at Specified Case Temperature

40 A

vice

s

25 A

]: Maximum

T(RMS)

De

vices

35 A

De

vice

s

16 A

De

vices

100 1000

Surge Current Duration – Full Cycles

600

1000

vices

Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants

versus Case Temperature

4.0

INITIAL ON-STATE CURRENT = 400 mA dc 16 A to 40 A Devices = 100 mA dc 6 to 12A Devices

H

I

3.0

= 25 ˚C)

C

2.0

(T

H

I

1.0

Ratio of

0

-65 -15 +65+25 +125-40

Case Temperature (TC) – ˚C

Figure E4.9 Normalized DC Holding Current versus Case Temperature

Figure E4.11 Peak Surge Current versus Surge Current Duration

(16 A to 40 A)

10

Typical Turn-on

8

) – µs

6

gt

4

Time (t

2

0

IGT = 50 mA

0

100

DC Gate Trigger Current (

IGT = 80 to 100 mA

IGT = 10 mA to 35 mA

200

300

I

400 500

) – mA

GT

Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)

Data Sheets Alternistor Triacs

6

0

18

16

14

12

] – Watts

10

D(AV)

8

6

4

Average On-state Power

Dissipation [P

2

0

01234567891011121314151

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

RMS On-state Curren

6A to 12A Devices

t [l

] – AmpsS

T(RMS)

˚

Figure E4.13 Power Dissipation (Typical) versus On-state Current

(6 A to 12 A)

18

CURRENT WAVEFORM: Sinusoidal

16

LOAD: Resistive or inductive CONDUCTION ANGLE: 360˚

14

12

] – Watts

10

D (AV)

8

16A Devices

6

4

Average On-state Power

Dissipation [P

2

0

0246

RMS On-state Current [I

8

10 12

T(RMS)

14

] – Amps

16

Figure E4.14 Power Dissipation (Typical) versus On-state Current

(16 A)

120

) – ˚C

A

100

80

60

TO-251 Devices

40

25

Maximum Allowable Ambient Temperature (T

20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING – NO HEATSINK

TO-220 Devices

] – Amps

T (RMS)

˚

Figure E4.16 Maximum Allowable Ambient Temperature versus

On-state Current

45

Current Waveform: Sinusoidal

40

Load: Resistive or Inductive Conduction Angle: 360˚

35

30

]—Watts

25

D(AV)

20

25 A

30 A and

35 A Devices

40 A

15

10

Average On-State Power

5

Dissipation [P

0

012

4

8

RMS On-State Current [I

20 28 36

16 24 32 40

]—Amps

T(RMS)

Figure E4.15 Power Dissipation (Typical) versus On-state Current

(25 A to 40 A)

Notes

Selected Packages*

File #E71639

U.L. RECOGNIZED

TO-202

E5

TO-92

*TO-220

Isolated

3-lead

Compak

TO-251

TO-252

D-Pak

E5

V-P ak

General Description

The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the 10 mA to 50 mA ranges, see “SCRs” section of this catalog.

The TO-220 and TO-92 are electrically isolated where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

Teccor's line of SCRs features glass-passivated junctions to ensure long-term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination.

Tape-and-reel packaging is available for the TO-92 package. Consult the factory for more information.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

AK

G

Sensitive SCRs

(0.8 A to 10 A)

Features

• Electrically-isolated TO-220 package

• High voltage capability — up to 600 V

• High surge capability — up to 100 A

• Glass-passivated chip

Compak Features

• Surface mount package — 0.8 A series

• New small-profile three-leaded Compak package

• Four gate sensitivities available

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

Sensitive SCRs Data Sheets

Part Number

I

T

(1)

Amps

I

T(RMS)IT(AV)

MAX MIN MAX MAX MAX

TYPE

0.8 A

1.5 A

4A

Non-isolated

A

K

G

K

A

TO-92 TO-202

G

K

TO-251

V-Pak Compak

G

K

G

A

G

A

K

TO-252

D-Pak

See “Package Dimensions” section for variations. (11)

S2S1 0.8 0.51 200 12 2 100 1.7 S4S1 0.8 0.51 400 12 2 100 1.7 S6S1 0.8 0.51 600 12 2 100 1.7 S2S2 0.8 0.51 200 50 2 100 1.7 S4S2 0.8 0.51 400 50 2 100 1.7 S6S2 0.8 0.51 600 50 2 100 1.7

S2S 0.8 0.51 200 200 2 100 1.7 S4S 0.8 0.51 400 200 2 100 1.7

S6S 0.8 0.51 600 200 2 100 1.7 S2S3 0.8 0.51 200 500 2 100 1.7 S4S3 0.8 0.51 400 500 2 100 1.7 S6S3 0.8 0.51 600 500 2 100 1.7

EC103B 0.8 0.51 200 200 1 50 1.7 EC103D 0.8 0.51 400 200 1 50 1.7

EC103M 0.8 0.51 600 200 2 100 1.7 EC103B1 0.8 0.51 200 12 1 50 1.7 EC103D1 0.8 0.51 400 12 1 50 1.7 EC103M1 0.8 0.51 600 12 2 100 1.7 EC103B2 0.8 0.51 200 50 1 50 1.7 EC103D2 0.8 0.51 400 50 1 50 1.7 EC103M2 0.8 0.51 600 50 2 100 1.7 EC103B3 0.8 0.51 200 500 1 50 1.7 EC103D3 0.8 0.51 400 500 1 50 1.7 EC103M3 0.8 0.51 600 500 2 100 1.7

2N5064 0.8 0.51 200 200 1 50 1.7

2N6565 0.8 0.51 400 200 1 100 1.7 TCR22-4 1.5 0.95 200 200 1 100 1.5 TCR22-6 1.5 0.95 400 200 1 100 1.5 TCR22-8 1.5 0.95 600 200 2 100 1.5

T106B1 4 2.5 200 200 2 100 2.2 T106D1 4 2.5 400 200 2 100 2.2 T106M1 4 2.5 600 200 2 100 2.2 T107B1 4 2.5 200 500 2 100 2.5 T107D1 4 2.5 400 500 2 100 2.5 T107M1 4 2.5 600 500 2 100 2.5

S2004VS1 S2004DS1 4 2.5 200 50 2 100 1.6 S4004VS1 S4004DS1 4 2.5 400 50 2 100 1.6 S6004VS1 S6004DS1 4 2.5 600 50 2 100 1.6 S2004VS2 S2004DS2 4 2.5 200 200 2 100 1.6 S4004VS2 S4004DS2 4 2.5 400 200 2 100 1.6 S6004VS2 S6004DS2 4 2.5 600 200 2 100 1.6

See “General Notes” on page E5 - 4 and “Electrical Specifications Notes” on page E5 - 5

V

DRM

RRM

Volts

&

I

GT

(2) (12)

(14) (18)

µAmps

TC or TL =

25 °C

I

&

DRM

I

RRM

(20) (21)

µAmps

TC or TL =

100 °C

TC or TL =

110 °C

V

TM

(3) (10)

Volts

Data Sheets Sensitive SCRs

.

V

GT

(4) (12) (22)

T

or TL =

C

-40 °C

1.2 0.8 0.2 5 1 5 1 0.1 20/16 20 50 2 60 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 10 50 2 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 10 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 30 50 4 50 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 15 50 4 50 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 40 50 5 45 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 20 50 5 45 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 30 50 3.5 50 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 15 50 3.5 50 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 20 50 2 60 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 10 50 2 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 10 50 3 60 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 40 50 5 45 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 20 50 5 45 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 2.2 60 1.6

1.2 0.8 0.25 5 1 6 1 0.1 20/16 25 50 2.2 60 1.6 1 0.80.2551610.120/1660 50 3.550 1.6 1 0.80.2551610.120/1640 50 3.550 1.6 1 0.80.2551610.120/1630 50 3.550 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7

Volt s

TC or TL =

MAX MAX MIN MIN TYP (23) TYP MAX

25 °C

TC or TL =

110 °C 60/50 Hz

I

H

(5) (15)

(16) (19)

mAmps

I

V

GM

(17)

Amps Volts

GRMPGM

P

(17)

Watts Watts

G(AV)

I

TSM

(6) (7) (13)

Amps

dv/dt di/dt

Volts/µSec Amps/µSec

t

gt

(8)

µSec

t

q

(9)

µSec Amps

See “General Notes” on page E5 - 4 and “Electrical Specifications Notes” on page E5 - 5

l2t

2

/Sec

Sensitive SCRs Data Sheets

TYPE

6A

8A

10 A

Part Number

Isolated Non-isolated

A

G

K

A

TO-220 TO-202

See “Package Dimensions” section for variations. (11)

S2006LS2 S2006FS21 S2006VS2 S2006DS2 6 3.8 200 200 5 250 1.6 S4006LS2 S4006FS21 S4006VS2 S4006DS2 6 3.8 400 200 5 250 1.6 S6006LS2 S6006FS21 S6006VS2 S6006DS2 6 3.8 600 200 5 250 1.6 S2006LS3 S2006FS31 S2006VS3 S2006DS3 6 3.8 200 500 5 250 1.6 S4006LS3 S4006FS31 S4006VS3 S4006DS3 6 3.8 400 500 5 250 1.6 S6006LS3 S6006FS31 S6006VS3 S6006DS3 6 3.8 600 500 5 250 1.6 S2008LS2 S2008FS21 S2008VS2 S2008DS2 8 5.1 200 200 5 250 1.6 S4008LS2 S4008FS21 S4008VS2 S4008DS2 8 5.1 400 200 5 250 1.6 S6008LS2 S6008FS21 S6008VS2 S6008DS2 8 5.1 600 200 5 250 1.6 S2008LS3 S2008FS31 S2008VS3 S2008DS3 8 5.1 200 500 5 250 1.6 S4008LS3 S4008FS31 S4008VS3 S4008DS3 8 5.1 400 500 5 250 1.6 S6008LS3 S6008FS31 S6008VS3 S6008DS3 8 5.1 600 500 5 250 1.6 S2010LS2 S2010FS21 S2010VS2 S2010DS2 10 6.4 200 200 5 250 1.6 S4010LS2 S4010FS21 S4010VS2 S4010DS2 10 6.4 400 200 5 250 1.6 S6010LS2 S6010FS21 S6010VS2 S6010DS2 10 6.4 600 200 5 250 1.6 S2010LS3 S2010FS31 S2010VS3 S2010DS3 10 6.4 200 500 5 250 1.6 S4010LS3 S4010FS31 S4010VS3 S4010DS3 10 6.4 400 500 5 250 1.6 S6010LS3 S6010FS31 S6010VS3 S6010DS3 10 6.4 600 500 5 250 1.6

K

G

A

K

TO-251

V-Pa k

A

G

A

TO-252

D-Pak

G

A

K

I

T

(1)

Amps

I

T(RMS)IT(AV)

MAX MAX MIN MAX MAX MAX MAX

V

DRM

V

Volts

RRM

&

I

GT

(2) (12)

µAmps

TC =

25 °C

I

DRM

I

RRM

(20) (21)

µAmps

110 °C

&

TC =

V

(3) (10)

Volts

TM

Specific Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA pulse

width ≥15 µsec with ≤0.1 µs rise time

dv/dt — Critical rate-of-rise of forward off-state voltage

2

I

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

and I

DRM

IGT — DC gate trigger current VD = 6 V dc; RL = 100 Ω

— Peak gate current

I

GM

I

— DC holding current; initial on-state current = 20 mA

H

— Maximum on-state current

I

T

I

— Peak one-cycle forward surge current

TSM

P

G(AV)

P

— Peak gate power dissipation

GM

t

— Gate controlled turn-on time gate pulse = 10 mA; minimum

gt

width = 15 µS with rise time ≤0.1 µs

t

— Circuit commutated turn-off time

q

V

DRM

V

GRM

— DC gate trigger voltage; VD = 6 V dc; RL = 100 Ω

V

GT

V

— Peak on-state voltage

TM

— Peak off-state current at V

RRM

— Average gate power dissipation

and V

— Repetitive peak off-state forward and reverse voltage

RRM

— Peak reverse gate voltage

DRM

and V

RRM

General Notes

• Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC registered data. See specifications table on pages E5 - 2 and E5 - 3.

T

• The case lead temperature ( dimensional outline drawings in the “Package Dimensions” section of this catalog.

• All measurements (except I

= 1 kΩ unless otherwise noted.

R

GK

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Operating temperature (T devices, -65 °C to +125 °C for 2N Series devices, -40 °C to +125 °C for “TCR” Series, and -40 °C to +110 °C for all others.

• Storage temperature range (T devices, -40 °C to +150 °C for TO-202 and Compak devices, and

-40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of +230 °C for 10 seconds maximum ≥1/16" (1.59 mm) from case.

or TL) is measured as shown on

C

) are made with an external resistor

GT

) is -65 °C to +110 °C for EC Series

J

) is -65 °C to +150 °C for TO-92

S

Data Sheets Sensitive SCRs

V

GT

(4) (12) (22)

Volts

=

T

-40 °C

TC =

C

25 °C

MAX MAX MIN 60/50 Hz TYP TYP MAX

1 0.8 0.25 6 1 6 1 0.1 100/83 10 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 8 1 6 1 0.1 100/83 10 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41

10.80.2561610.1100/8310 100 45041

10.80.2561610.1100/838 100 45041

10.80.2581610.1100/8310 100 54541

10.80.2581610.1100/838 100 54541

10.80.2581610.1100/838 100 54541 1 0.8 0.25 6 1 6 1 0.1 100/83 10 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 8 1 6 1 0.1 100/83 10 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41

TC =

110 °C T

I

H

(5) (19)

mAmps

I

(17)

Amps Volts

GM

V

GRM

P

(17)

Watts Watts

GM

P

G(AV)ITSM

(6) (13)

Amps

dv/dt di/dt

Volt s/ µSec

= 110 °C

C

Amps/µSec

t

gt

(8)

µSec

t

q

(9)

µSec Amps

l2t

2

Sec

Electrical Specifications Notes

(1) See Figure E5.1 through Figure E5.9 for current ratings at

specified operating temperatures.

(2) See Figure E5.10 for I

(3) See Figure E5.11 for instantaneous on-state current (i

state voltage (v

T

(4) See Figure E5.12 for V

(5) See Figure E5.13 for I

(6) For more than one full cycle, see Figure E5.14.

(7) 0.8 A to 4 A devices also have a pulse peak forward current on-

state rating (repetitive) of 75 A. This rating applies for operation at 60 Hz, 75 °C maximum tab (or anode) lead temperature, switching from 80 V peak, sinusoidal current pulse width of 10 µs minimum, 15 µs maximum. See Figure E5.20 and Figure E5.21.

(8) See Figure E5.15 for t

(9) Test conditions as follows:

or T

– T

≤80 °C, rectangular current waveform

C

L

– Rate-of-rise of current ≤10 A/µs – Rate-of-reversal of current ≤5A/µs

= 1 A (50 µs pulse), Repetition Rate = 60 pps

– I

TM

= Rated

– V

RRM

= 15 V minimum, V

– V

R

– Rate-of-rise reapplied forward blocking voltage = 5 V/µs – Gate Bias = 0 V, 100 Ω (during turn-off time interval)

GT

) TYP.

GT

H

gt

versus TC or TL.

versus IGT.

= Rated

DRM

) versus on-

T

(10) Test condition is maximum rated RMS current except TO-92

devices are 1.2 A

; T106/T107 devices are 4 APK.

PK

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

= 6 V dc, RL = 100 Ω (See Figure E5.19 for simple test circuit

(12) V

D

for measuring gate trigger voltage and gate trigger current.)

(13) See Figure E5.1 through Figure E5.9 for maximum allowable case

temperature at maximum rated current.

= 500 µA maximum at TC = -40 °C for T106 devices

(14) I

GT

= 10 mA maximum at TC = -65 °C for 2N5064 Series and

(15) I

H

2N6565 Series devices

= 6 mA maximum at TC = -40 °C for T106 devices

(16) I

H

(17) Pulse Width ≤10 µs

= 350 µA maximum at TC = -65 °C for 2N5064 Series and

(18) I

GT

2N6565 Series devices

(19) Latching current can be higher than 20 mA for higher I

types.

GT

Also, latching current can be much higher at -40 °C. See Figure E5.18.

or TL = TJ for test conditions in off state

(20) T

C

(21) I

DRM

and I

= 50 µA for 2N5064 and 100 µA for 2N6565 at

RRM

125 °C

(22) TO-92 devices specified at -65 °C instead of -40 °C

= 110 °C

(23) T

C

Sensitive SCRs Data Sheets

Thermal Resistance (Steady State)

R

[R

] °C/W (TYPICAL)

θ JA

Package Code

Typ e

ELF2FCDV

θJC

TO-92 TO-220 TO-202

Type 2, 4, & 41

TO-202

Typ e 1 & 3

Compak TO-252

D-Pak

0.8 A 75 [160] 60*

1.5 A 50 [160]

4.0 A 10 [100] 6.2 [80] 3.0 3.8 [85]

6.0 A 4.0 [65] 4.3 1.8 2.4

8.0 A 3.4 3.9 1.5 2.1

10.0 A 3.0 3.4 1.45 1.72

*Mounted on 1 cm2 copper foil surface; two-ounce copper foil

Electrical Isolation

Teccor’s isolated sensitive SCRs will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows other standard and optional isolation ratings.

Electrical Isolation *

from Leads to Mounting Tab

V AC RMS TO-220

2500 4000

Standard

Optional **

*UL Recognized File #E71639 **For 4000 V isolation, use “V” suffix in part number.

130

120

110

) – ˚C

C

100

90

80

Maximum Allowable

70

Case Temperature (T

60

50

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

EC Series

RMS On-State Current [

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

JEDEC 2N Series

Compak

] – Amps

I

T(RMS)

˚

Figure E5.1 Maximum Allowable Case Temperature versus

RMS On-state Current

Figure E5.2 Maximum Allowable Case Temperature versus

130

120

) – ˚C

C

T

110

100

Maximum Allowable Case Temperature (

4 A TO-251 and TO-252

90

80

70

60

TCR22 Devices

50

40

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

RMS On-state Current [

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

T106 and T107 Type 2 and 4

2.6

] – Amps

I

T(RMS)

T106 and T107 Type 1 and 3

RMS On-state Current

130

120

) – ˚C

C

T

110

100

90

80

EC Series

70

60

50

0 0.1 0.2 0.3 0.4 0.5 0.6

Maximum Allowable Case Temperature (

Average On-state Current [

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

JEDEC 2N Series

Compak

] – Amps

I

T(AV)

TO-251

V-Pa k

0.51

Figure E5.3 Maximum Allowable Case Temperature versus

Average On-state Current

Data Sheets Sensitive SCRs

130

120

110

) – ˚C

C

100

90

80

70

Maximum Allowable

60

Case Temperature (T

TCR22 Devices

50

40

0 0.5 1.0 1.5 2.0 2.5 3.0

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

T106 and T107 Type 2 and 4

0.95

T106 and T107 Type 1 and 3

1.65 1.9 2.54

] – Amps

T(AV)

˚

Figure E5.4 Maximum Allowable Case Temperature versus

Average On-state Current

140

) – ˚C

A

120

100

80

60

1.5 A and JEDEC 2N Series I

40

and EC Series I

20

Maximum Allowable Ambient Temperature (T

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING

EC Series I

T(RMS)

1.5 A Devices and JEDEC 2N Series I

T(AV)

On-state Current – Amps

˚

T(RMS)

Figure E5.5 Maximum Allowable Ambient Temperature versus

On-state Current

140

120

) – ˚C

A

100

80

60

Maximum Allowable

40

Ambient Temperature (T

T106/T107 TO-202 Type 2 and 4 and TO-251

20

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING

T106/T107 TO-202 Type 1 and 3

˚

TO-220

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Average On-state Current [I

T(AV)

] – Amps

Figure E5.7 Maximum Allowable Ambient Temperature versus

Average On-state Current

115

110

) – ˚C

105

C

100

6 A TO-220 and TO-202

95

90

Maximum Allowable

Case Temperature (T

85

80

8 A TO-220 and TO-202

10 A TO-220 and TO-202

2468100

RMS On-state Current [I

6 A TO-251 and TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 TEMPERATURE: Measured as Shown on Dimensional Drawings

8 A TO-251 and TO-252

T(RMS)

] – Amps

10 A TO-251 and TO-252

Figure E5.8 Maximum Allowable Case Temperature versus

RMS On-state Current

˚

140

120

) – ˚C

A

100

80

60

Maximum Allowable

T106/T107 TO-202 Type 2 and 4 and TO-251

40

Ambient Temperature (T

20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

RMS On-state Current [I

Figure E5.6 Maximum Allowable Ambient Temperature versus

RMS On-state Current

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING

T106/T107 TO-202 Type 1 and 3

] – Amps

T(RMS)

˚

TO-220

2.0

110

105

) – ˚C

C

100

6 A TO-220 and TO-202

95

90

Maximum Allowable

Case Temperature (T

85

80

6 A TO-251 and TO-252

8 A TO-220 and TO-202

10 A TO-220 and TO-202

134560

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured as Shown on Dimensional Drawings

10 A TO-251 and TO-252

] – Amps

T(AV)

8 A TO-251 and TO-252

Figure E5.9 Maximum Allowable Case Temperature versus

Average On-state Current

˚

72

Sensitive SCRs Data Sheets

9.0

GT

I

Ratio of

8.0

7.0

6.0

= 25 ˚C)

5.0

C

(T

4.0

GT

I

3.0

2.0

1.0

0

-65 -15 +25 +65 +110 +125-40

See General Notes for specific device operating temperature range.

Case Temperature (TC) – ˚C

Figure E5.10 Normalized DC Gate-Trigger Current versus

Case Temperature

32

28

) – Amps

T

TC = 25˚C

24

20

16

6 A to 10 A Devices

4 A TO-251 and TO-252

12

8

0.8 A to 1.5 A TO-92, T106/T107, and Compak

4

0

Instantaneous On-state Current (i

0 .6 .8 1.0 1.2 1.4 1.6

Instantaneous On-state Voltage (vT) – Volts

H

I

4.0

3.0

= 25 ˚C)

C

2.0

(T

H

I

1.0

See General Notes for specific operating temperature range.

Ratio of

0

-65 -40 -15 +25 +65 +110 +125

Case Temperature (TC) – ˚C

Figure E5.13 Normalized DC Holding Current versus Case Temperature

Figure E5.11 Instantaneous On-state Current versus

On-state Voltage (Typical)

GT

V

Ratio of

2.0

C)

1.5

˚

= 25

C

T

1.0

(

GT

V

0.5

0

-65 -15 +25 +65 +110 +125-40

See General Notes for specific operating temperature range

Case Temperature (TC) – ˚C

Figure E5.12 Normalized DC Gate-Trigger Voltage versus

Case Temperature

Data Sheets Sensitive SCRs

0

200

100

80

60 50 40

30

) – Amps

20

TSM

10

8

6 5 4

Peak Surge (Non-repetitive)

On-state Current (I

Notes:

3

1) Gate control may be lost during and immediately following surge

2

current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

1

1 2 3 4 5 6 8 10 20 30 40 50 60 80 100 200 300 400 600 100

10 A Devices

4 A TO-251 and TO-252

Surge Current Duration – Full Cycles

Figure E5.14 Peak Surge On-state Current versus Surge Current Duration

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [I Rated Value at Specified Case Temperature

T(RMS)

]: Max

8 A Devices

6 A Devices

TO-106 and TO-107

1.5 A Devices

0.8 A TO-92 and Compak

100

IGT = 50 µA MAX

IGT = 200 µA MAX

IGT = 500 µA MAX

10

) – µs

gt

IGT = 12 µA MAX

1.0

Turn-on Time (t

TC = 25 ˚C

0.1

0.01 0.1 1 10 100

DC Gate Trigger Current (IGT) – mA

Figure E5.15 Typical Turn-on Time versus Gate Trigger Current

CURRENT WAVEFORM: Half Sine Wave

5.0 LOAD: Resistive or Inductive

] – Watts

D(AV)

Average On-state Power Dissipation [P

CONDUCTION ANGLE: 180˚

4.0

3.0

2.0

1.0

01234

T106 and T107

RMS On-state Current [I

4 A TO-251 and TO-252

0.8 A TO-92 and Compak

1.5 A Devices

] – Amps

T(RMS)

Figure E5.16 Power Dissipation (Typical) versus RMS On-state Current

Sensitive SCRs Data Sheets

0

12

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive

10

CONDUCTION ANGLE: 180˚

] – Watts

8

D(AV)

6

4

Average On-state

2

Power Dissipation [P

0

024681

RMS On-state Current [I

6 A to 10 A TO-220, TO-202, TO-251, and TO-252

] – Amps

T(RMS)

Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current

6 V

DC

Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and

Reset

Normally-closed

Pushbutton

+

–

V1

D.U.T.

100

1 k

(1%)

I

GT

IN4001

I

G

V

100

GT

R1

Current Measurement

Note: V1 — 0 V to 10 V dc meter

V

— 0 V to 1 V dc meter

GT

IG — 0 mA to 1 mA dc milliammeter R1 — 1 k potentiometer

) until meter reading V1 drops from 6 V to 1 V. Gate trigger

just prior to V1 dropping. Gate trig-

GT

V

GT

I

GTIG

is reading (in amperes) on meter just prior to V1 drop-

G

may turn out to be a negative quantity (trigger current

GT

------------1000

Amps–=

L

I

Ratio of

9.0

8.0

7.0

6.0

= 25 ˚C)

5.0

C

T

(

4.0

L

I

3.0

2.0

1.0

0

-65 -15 +25 +65 +110 +125-40

See General Notes for specific device operating temperature range.

Case Temperature (TC) – ˚C

To measure gate trigger voltage and current, raise gate voltage (V

GT

voltage is the reading on V ger current IGT can be computed from the relationship

where I ping.

Note: I flows out from gate lead).

Figure E5.18 Normalized DC Latching Current versus Case Temperature

Data Sheets Sensitive SCRs

180

160

140

) – Amps

120

TM

100

80

60

I

TM

40

Peak Discharge Current (I

20

tW = 5 TIME CONSTANTS

0

1.0 3.0

Figure E5.20 Peak Repetitive Capacitor Discharge Current

180

160

140

) – Amps

120

TM

100

t

W

5.0

7.0

0.8 A to 4 A

10 30

Peak Current Duration (tW) – µs

1 Hz

12 Hz

60 Hz

50

1 Hz

100

70

Peak Discharge Current (I

Figure E5.21 Peak Repetitive Sinusoidal Curve

80

60

I

40

20

TM

0

1.0 3.0

t

W

5.0

0.8 A to 4 A

10 30

7.0

Peak Current Duration (tW) – µs

12 Hz

60 Hz

50

100

70

Notes

Selected Packages*

File #E71639

U.L. RECOGNIZED

TO-202

TO-92

*TO-218X

*TO-218

TO-263

2

D

Pak

TO-252

D-Pak

E6

3-lead

Compak

E6

*TO-220

General Description

The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are required, see “Sensitive SCRs” section of this catalog.

Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

TO-251

V-Pak

AK

G

SCRs

(1 A to 70 A)

Features

• Electrically-isolated package

• High voltage capability — 200 V to 1000 V

• High surge capability — up to 950 A

• Glass-passivated chip

Compak SCR

• Surface mount package — 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

SCRs Data Sheets

TYPE

1A

6A

8A

10 A

12 A

Part Number

Isolated Non-isolated

A

K

G

TO-92

S201E S2N1 1 0.64 200 1 10

S401E S4N1 1 0.64 400 1 10

S601E S6N1 1 0.64 600 1 10

G

K

A

TO-220 TO-202

S2006L S2006F1 S2006V S2006D 6 3.8 200 1 15

S4006L S4006F1 S4006V S4006D 6 3.8 400 1 15

S6006L S6006F1 S6006V S6006D 6 3.8 600 1 15

S8006L S8006V S8006D 6 3.8 800 1 15

SK006L SK006V SK006D 6 3.8 1000 1 15

S2008L S2008F1 S2008R S2008V S2008D 8 5.1 200 1 15

S4008L S4008F1 S4008R S4008V S4008D 8 5.1 400 1 15

S6008L S6008F1 S6008R S6008V S6008D 8 5.1 600 1 15

S8008L S8008R S8008V S8008D 8 5.1 800 1 15

SK008L SK008R SK008V SK008D 8 5.1 1000 1 15

S2010L S2010F1 S2010R S2010V S2010D 10 6.4 200 1 15

S4010L S4010F1 S4010R S4010V S4010D 10 6.4 400 1 15

S6010L S6010F1 S6010R S6010V S6010D 10 6.4 600 1 15

S8010L S8010R S8010V S8010D 10 6.4 800 1 15

SK010L SK010R SK010V SK010D 10 6.4 1000 1 15

K

G

A

See “Package Dimensions” section for variations. (11)

A

G

K

A

TO-220

S2012R S2012V S2012D 12 7.6 200 1 20

S4012R S4012V S4012D 12 7.6 400 1 20

S6012R S6012V S6012D 12 7.6 600 1 20

S8012R S8012V S8012D 12 7.6 800 1 20

SK012R SK012V SK012D 12 7.6 1000 1 20

A

G

K

G

K

A

TO-251

V-Pa k Compak

A

G

A

K

TO-252

D-Pak

I

T

(1) (2) (15)

Amps

I

T(RMS)IT(AV)

MAX MAX MIN MIN MAX

V

& V

DRM

Volts

RRM

I

GT

(4)

mAmps

Specific Test Conditions

di/dt — Maximum rate-of-rise of on-state current; IGT = 150 mA with

≤ 0.1 µs rise time

dv/dt — Critical rate of applied forward voltage

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

I

for fusing

I

and I

DRM

V

Igt — dc gate trigger current; VD = 12 V dc; RL = 60 Ω for 1 to 16 A

devices and 30 Ω for 20 to 70 A devices

— Peak gate current

I

GM

— dc holding current; gate open

I

H

I

— Maximum on-state current

T

— Peak one-cycle forward surge current

I

TSM

P

G(AV)

P

— Peak gate power dissipation

GM

— Gate controlled turn-on time; gate pulse = 100 mA; minimum

t

gt

— Peak off-state forward and reverse current at V

RRM

— Average gate power dissipation

DRM

and

and V

DRM

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω for 1 to 16 A

V

gt

devices and 30 Ω for 20 to 70 A devices

— Peak on-state voltage at maximum rated RMS current

V

TM

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

devices and -40 °C to +125 °C for all other packages.

• Storage temperature range (T

devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and

-40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of 230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T outline drawings in the “Package Dimensions” sectionof this catalog.

— Repetitive peak off-state forward and reverse voltage

RRM

) is -65 °C to +125 °C for TO-92

J

) is -65 °C to +150 °C for TO-92

S

) is measured as shown on dimensional

C

V

width = 15 µs with rise time ≤ 0.1 µs

t

— Circuit commutated turn-off time

q

Data Sheets SCRs

I

DRM

& I

(14)

RRM

V

(3)

TM

V

(8)

(17)

GT

I

H

(5) (13)

I

GM

(12)

P

GMPG(AV)ITSM

(12)

(6) (10)

dv/dt I2t di/dt

t

(7)

t

gt

q

(9) (10)

mAmps

T

=

TC =

C

25 °C

100 °C

0.01 0.2 0.5 1.6 1.5 30 1.5 15 0.3 30/25 40 20 3.7 50 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.02 0.5 1 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.5 1 1.6 1.5 40 2 20 0.5 120/100 350 250 60 100 2 35

0.01 0.5 1 1.6 1.5 40 2 20 0.5 120/100 300 225 60 100 2 35

0.02 0.5 1 1.6 1.5 40 2 20 0.5 120/100 250 200 60 100 2 35

0.02 3 1.6 1.5 40 2 20 0.5 120/100 100 60 100 2 35

TC =

125 °C

MAX MAX MAX MAX MIN MIN TYP MAX

Vol ts

TC =

25 °C

Volt s

TC =

25 °C

mAmps

Amps

Watts Watts

Amps Volts/µSec

=

T

C

60/50 Hz

100 °C

TC =

125 °C

2

Amps

Sec Amps/µSec

µSec

Electrical Specification Notes

(1) See Figure E6.5 through Figure E6.16 for current rating at

specified operating case temperature.

(2) See Figure E6.1 and Figure E6.2 for free air current rating.

(3) See Figure E6.19 and Figure E6.20 for instantaneous on-state

current versus on-state voltage (typical).

(4) See Figure E6.18 for I

(5) See Figure E6.17 for I

(6) For more than one full cycle rating, see Figure E6.23.

(7) See Figure E6.22 for t

(8) See Figure E6.21 for V

(9) Test conditions are as follows:

= 1 A for 1 A devices and 2 A for all other devices

•I

T

versus TC.

GT

versus TC.

H

versus IGT.

gt

versus TC.

GT

(11) See package outlines for lead form configuration. When ordering

special lead forming, add type number as suffix to part number.

(12) Pulse width ≤10 µs

(13) Initial on-state current = 200 mA dc for 1 A through 16 A devices;

400 mA dc for 20 A through 70 A devices.

= TJ for test conditions in off state.

(14) T

C

(15) The R, K, or M package rating is intended for high surge condition

use only and not recommended for ≥50 A rms continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. Teccor's J package or W package is recommended for ≥50 A rms continuous current requirements.

(16) For various durations of an exponentially decaying current

waveform, see Figure E6.3 and Figure E6.4. (t

is defined as

W

5 time constants.)

(17) Minimum non-trigger V

at 125 °C is 0.2 V.

GT

• Pulse duration = 50 µs, dv/dt = 20 V/µs, di/dt = -10 A/µs for 1 A devices, and -30 A/µs for other devices

= 200 mA at turn-on

•I

GT

(10) See Figure E6.5 through Figure E6.10 for maximum allowable

case temperatures at maximum rated current.

SCRs Data Sheets

Part Number

Isolated Non-isolated

A

K

G

A

G

A

K

G

A

K

TO-263

2

Pak

D

TYPE

A

G

K

A

G

A

G

A

K

A

G

K

A

TO-220 TO-218X TO-218 TO-220 TO-218X TO-218

See “Package Dimensions” section for variations. (11) MAX MIN MIN MAX MAX

S2015L 15 9.5 200 1 30 0.01 0.5 1

S4015L 15 9.5 400 1 30 0.01 0.5 1

15 A

S6015L 15 9.5 600 1 30 0.01 0.5 1

S8015L 15 9.5 800 1 30 0.02 1 2

SK015L 15 9.5 1000 1 30 0.02 3

S2016R S2016N 16 10 200 1 30 0.01 0.5 1

16 A

S4016R S4016N 16 10 400 1 30 0.01 0.5 1

S6016R S6016N 16 10 600 1 30 0.01 0.5 1

S8016R S8016N 16 10 800 1 30 0.02 1 2

SK016R SK016N 16 10 1000 1 30 0.02 3

S2020L 20 12.8 200 1 30 0.01 0.5 1

S4020L 20 12.8 400 1 30 0.01 0.5 1

20 A

S6020L 20 12.8 600 1 30 0.01 0.5 1

S8020L 20 12.8 800 1 30 0.02 1.0 2

SK020L 20 12.8 1000 1 30 0.02 3

S2025L S2025R S2025N 25 16 200 1 35 0.01 1 2

S4025L S4025R S4025N 25 16 400 1 35 0.01 1 2

25 A

S6025L S6025R S6025N 25 16 600 1 35 0.01 1 2

S8025L S8025R S8025N 25 16 800 1 35 0.02 1.5 3

SK025L SK025R SK025N 25 16 1000 1 35 0.02 3

S2035J S2035K 35 22 200 5 40 0.01 1 2

35 A

S4035J S4035K 35 22 400 5 40 0.01 1 2

S6035J S6035K 35 22 600 5 40 0.01 1 2

S8035J S8035K 35 22 800 5 40 0.02 1.5 3

SK035K 35 22 1000 5 40 0.02 3

S2040R S2040N 40 25 200 5 40 0.01 1 2

40 A

S4040R S4040N 40 25 400 5 40 0.01 1 2

S6040R S6040N 40 25 600 5 40 0.01 1 2

S8040R S8040N 40 25 800 5 40 0.02 1.5 3

SK040R SK040N 40 25 1000 5 40 0.03 5

S2055R S2055W S2055M S2055N 55 35 200 5 40 0.01 1 2

55 A

S4055R S4055W S4055M S4055N 55 35 400 5 40 0.01 1 2

S6055R S6055W S6055M S6055N 55 35 600 5 40 0.01 1 2

S8055R S8055W S8055M S8055N 55 35 800 5 40 0.02 1.5 3

SK055R SK055M SK055N 55 35 1000 5 40 0.03 5

S2065J S2065K 65 41 200 5 50 0.02 1.5 3

65 A

S4065J S4065K 65 41 400 5 50 0.02 1.5 3

S6065J S6065K 65 41 600 5 50 0.02 1.5 3

S8065J S8065K 65 41 800 5 50 0.02 2 5

SK065K 65 41 1000 5 50 0.03 5

S2070W 70 45 200 5 50 0.02 1.5 3

70 A

S4070W 70 45 400 5 50 0.02 1.5 3

S6070W 70 45 600 5 50 0.02 1.5 3

S8070W 70 45 800 5 50 0.02 2 5

See “General Notes” on page E6 - 2 and “Electrical Specification Notes” on page E6 - 3.

I

T

(1) (15)

Amps

I

T(RMS)IT(AV)

V

DRM

V

RRM

Volts

&

I

GT

(4)

mAmps

TC =

25 °C

I

DRM

& I

(14)

mAmps

TC =

100 °C

RRM

TC =

125 °C

Data Sheets SCRs

V

TM

(3)

Volt s

T

= 25 °C TC = 25 °C 60/50 Hz

C

MAX MAX MAX MIN MIN TYP MAX

1.6 1.5 40 3 30 0.6 225/188 450 350 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 425 325 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 400 300 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 200 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 450 350 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 425 325 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 400 300 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 200 210 125 2 35

1.6 1.5 40 3 30 0.6 300/255 450 350 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 425 325 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 400 300 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 200 374 125 2 35

1.6 1.5 50 3.5 35 0.8 350/300 450 350 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 425 325 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 400 300 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 200 510 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 450 350 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 425 325 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 400 300 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 200 1035 150 2 35

1.8 1.5 60 3.5 35 0.8 520/430 650 550 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 600 500 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 500 475 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 250 1122 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 650 550 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 600 500 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 500 475 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 250 1750 175 2.5 35

1.8 2 80 5 50 1 950/800 650 550 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 600 500 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 500 475 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 250 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 650 550 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 600 500 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 500 475 3745 200 2.5 35

V

GT

(8) (17)

Volt s

I

H

(5) (13)

mAmps

I

GM

(12)

Amps

P

(12)

Watts Watts

GM

P

G(AV)

I

TSM

(6) (10) (16)

Amps Volts/µSec

T

=

C

100 °C

dv/dt I2t di/dt

TC =

125 °C

2

Sec Amps/µSec

Amps

t

gt

(7)

µSec

See “General Notes” on page E6 - 2 and “Electrical Specification Notes” on page E6 - 3.

t

q

(9) (10)

µSec

SCRs Data Sheets

Thermal Resistance (Steady State)

[R

] °C/W (TYP.)

θJA

Pkg.

Code

R

LF F2 R J WKM D V N

θJC

Type

TO-220

Isolated

1A

4.0 [50] 4.3 [45] 9.5 [70] 1.7 2.3 [70]

6A 8A

10 A

3.4 3.9 1.8 [40] 1.5 2.0

3.0 3.4 1.6 1.45 1.7

12 A 15 A

2.5

16 A 20 A 25 A

2.4

2.35 1.0 1.0

35 A 40 A 55 A 65 A 70 A

TO-202

Type 1

Non-isolated

TO-202

Type 2

Non-isolated

TO-220

Non-isolated

1.5 1.4 1.6

1.3 1.3

0.6 0.6

0.5 0.53 0.53 0.5

TO-218X

Isolated

0.70 0.70

0.86 0.86

TO-218X

Non-isolated

See below

0.60

TO-218

Isolated

TO-218

Non-isolated

TO-252

D-Pak

Surface Mount

TO-251AA

V-Pa k

Non-isolated

TO-263

2

D

Pak

Non-isolated

Thermal Resistance (Steady State)

[R

R

Package Code CE

Typ e

1A 35 * 50 [145]

θJC

] °C/W (TYP.)

θJA

Compak TO-92

* Mounted on 1cm2 copper foil surface; two-ounce copper foil

Electrical Isolation

Teccor’s isolated SCR packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows standard and optional isolation ratings.

Electrical Isolation *

from Leads to Mounting Tab

VACRMS

2500 4000

Isolated

Standard Standard Standard

Optional ** N/A N/A

* UL Recognized File #E71639 ** For 4000 V isolation, use “V” suffix in part number.

TO-220

TO-218X

Isolated

TO-218

Isolated

Data Sheets SCRs

120

100

) – ˚C

A

80

60

1 A TO-92

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ FREE AIR RATING

8 A TO-220 (Non-isolated)

6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and

Maximum Allowable

40

Ambient Temperature (T

20

0.2

0

0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS On-state Current [I

6 A TO-202 (Types 2 and 4) and 6 A TO-251

T(RMS)

1.8

] – Amps

2.0

Figure E6.1 Maximum Allowable Ambient Temperature versus

RMS On-state Current

120

100

) – ˚C

A

80

1 A TO-92

60

Maximum Allowable

Ambient Temperature (T

40

20

0.2

0

0.4 0.6 0.8 1.0 1.2 1.4

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ FREE AIR RATING

8 A TO-220 (Non-isolated)

6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and 3)

6 A TO-202 (Types 2 and 4) and 6 A TO-251

] – Amps

T(AV)

1.0

0.8

3)

0.6

0.4

0.2

Normalized Peak Current

0

25 50 75 100 125

2.2

Case Temperature (TC) – ˚C

Figure E6.4 Peak Capacitor Discharge Current Derating

(6 A through 55 A)

130

120

110

) – ˚C

C

100

90

80

Maximum Allowable

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

70

CONDUCTION ANGLE: 180˚

Case Temperature (T

CASE TEMPERATURE: Measure as

60

shown on dimensional drawing

50

0 0.4 0.8 1.20.6

1 A Devices

RMS On-state Current [I

T(RMS)

1.00.2

] – Amps

Figure E6.2 Maximum Allowable Ambient Temperature versus

Average On-state Current

1000

) – Amps

TM

300

200

100

I

TM

50

Peak Discharge Current (I

tw = 5 times constants

20

0.5 1.0 2.0 5.0 10 20 50

t

w

6 A to 10 A Devices

55 A Devices

25 A Devices

15 A and 16 A

Devices

12 A Devices

Pulse Current Duration (tw) – ms

Figure E6.3 Peak Capacitor Discharge Current (6 A through 55 A)

Figure E6.5 Maximum Allowable Case Temperature versus

RMS On-state Current (1 A)

130

120

110

) – ˚C

6 A Devices

C

100

90

80

Maximum Allowable

70

Case Temperature (T

60

50

0246 81012

8 A TO-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180º CASE TEMPERATURE: Measure as shown on dimensional drawings

8 A TO-220 (Non-isolated) TO-251 and TO-252

and 8 A TO-202

RMS On-state Current [I

10 A TO-220 (Isolated) and 10 A TO-202

] – Amps

T(RMS)

Figure E6.6 Maximum Allowable Case Temperature versus

RMS On-state Current (6 A, 8 A, and 10 A)

SCRs Data Sheets

130

120

) – ˚C

110

C

10 A TO-220

(Non-isolated)

100

10 A TO-251 and 10 A TO-252

90

80

70

Maximum Allowable

Case Temperature (T

60

50

12 A TO-220 (Non-isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawing

04 8121620

16 A TO-220 (Non-isolated)

TO-251 and TO-252

and TO-263

RMS On-state Current [I

T(RMS)

] – Amps

20 A TO-220 (Isolated)

Figure E6.7 Maximum Allowable Case Temperature versus

RMS On-state Current (10 A, 12 A, 16 A, and 20 A)

130

120

110

) – ˚C

C

25 A TO-220

100

Maximum Allowable

Case Temperature (T

(Isolated)

90

80

CURRENT WAVEFORM: Sinusoidal

70

LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

60

CASE TEMPERATURE: Measure as shown on dimensional drawings

50

25 A TO-220

(Non-isolated)

and TO-263

˚

0 4 8 12162024 283236

RMS On-state Current [I

T(RMS)

] – Amps

Figure E6.8 Maximum Allowable Case Temperature versus

RMS On-state Current (25 A and 35 A)

15 A TO-220

(Isolated)

35 A TO-218 (Isolated)

130

120

) – ˚C

C

110

55 A TO-220

100

(Non-isolated) and TO-263 *

90

* The R, K or M package rating

80

is intended only for high surge condition use and is not recommended for >50 A rms continuous

70

current use, since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages

60

are recommended for >50 A rms continuous current requirements.

Maximum Allowable Case Temperature (T

50

010203040

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

55 A TO-218AC (Non-isolated) *

65 A TO-218AC (Isolated) *

50 60 70 75

] – Amps

T(RMS)

Figure E6.10 Maximum Allowable Case Temperature versus

RMS On-state Current (55 A and 65 A)

130

) – ˚C

C

120

110

100

90

80

70

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

60

CASE TEMPERATURE: Measure as shown on dimensional drawings

50

Maximum Allowable Case Temperature (T

0 0.2 0.4 0.6 0.8

Average On-state Current [I

1 A Devices

T(AV)

] – Amps

Figure E6.11 Maximum Allowable Case Temperature versus

Average On-state Current (1 A)

130

120

110

) – ˚C

C

100

65 A TO-218X

90

80

(Isolated)

Maximum Allowable

70

Case Temperature (T

60

50

0 10203040506070

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

55 A TO-218X

(Non-isolated)

40 A TO-220

(Non-isolated)

and TO-263

T(RMS)

70 A TO-218X (Non-isolated)

] – Amps

Figure E6.9 Maximum Allowable Case Temperature versus

RMS On-state Current (40 A through 70 A)

130

20 (Non-isolated)

-2

) – ˚C

C

120

110

6 A TO-220 6 A TO-202

100

90

80

Maximum Allowable Case Temperature (T

12 A TO and TO-251 and TO

6 A TO-251 6 A TO-252

-220 (I

8 A TO

10 2345678

solated)

8 A TO

8 A TO-220

(Non-isolated)

10 A TO-251 10 A TO-252

-202

252

-

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

10 A TO-220 (Non-isolated)

10 A TO

and 10 A T

] – Amps

T(AV)

Figure E6.12 Maximum Allowable Case Temperature versus

Average On-state Current (8 A, 10 A, and 12 A)

-220 (Isolated)

-202

O

Data Sheets SCRs

0

130

16 A TO-220 (Non-isolated) and TO-263

120

110

) – ˚C

C

100

90

80

Maximum Allowable

Case Temperature (T

70

60

50

02468101214

10 A TO-220

(Non-isolated)

15 A TO-220

(Isolated)

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as shown on dimensional drawings

20 A TO-220

(Isolated)

] – Amps

T(AV)

Figure E6.13 Maximum Allowable Case Temperature versus

Average On-state Current (10 A through 20 A)

130

120

) – ˚C

C

110

100

90

25A TO-220 (Isolated)

80

70

60

Maximum Allowable Case Temperature (T

50

0 .4 8 12 16 20 24

25A

Average On-state Current [I

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

TO

220 (Non-isolate

and TO

-

263

35 A TO-218 (Non-isolated)

35 A TO-218 (Isolated)

d)

] – Amps

T(AV)

130

120

110

) – ˚C

C

100

55 A TO-220 (Non-isolated) and TO-263

90

80

The R, K, or M package

Maximum Allowable

*

rating is intended only for high surge condition use and is not

70

Case Temperature (T

recommended for >32 A (AV) continuous current use since narrow pin lead temperature can exceed PCB

60

solder melting temperature. J or W packages are recommended for >32 A (AV) continuous current requirements.

50

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

55 A TO-218AC (Non-isolated)

*

65 A TO-218AC (Isolated) *

0 102030405

Average On-state Current [I

T(AV)

] – Amps

Figure E6.16 Maximum Allowable Case Temperature versus

Average On-state Current (55 A and 65 A)

2.0

INITIAL ON-STATE CURRENT = 200 mA dc for 1 A to 20 A Devices and 400 mA dc for 25 A to 70 A Devices

-40 -15 +25 +65 +105 +125

H

I

Ratio of

1.5

= 25 ˚C)

C

(T

1.0

H

I

.5

0

Case Temperature (TC) – ˚C

*

Figure E6.14 Maximum Allowable Case Temperature versus

Figure E6.17 Normalized dc Holding Current versus Case Temperature

Average On-state Current (25 A and 35 A)

130

120

110

) – ˚C

C

100

90

(Non-isolated)

Maximum Allowable

80

Case Temperature (T

70

60

40 A TO-220

and TO-263

55 A TO-218X (Non-isolated)

65 A TO-218X (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

70 A TO-218X (Non-isolated)

50

0 1020304050

Average On-state Current [I

T(AV)

] – Amps

Figure E6.15 Maximum Allowable Case Temperature versus

Average On-state Current (40 A through 70 A)

Figure E6.18 Normalized DC Gate-Trigger Current versus

2.0

1.5

= 25 ˚C)

GT

I

C

(T

1.0

GT

I

0.5

Ratio of

0

-40 -15 +25 +65 +105 +125

Case Temperature

Case Temperature (TC) – ˚C

SCRs Data Sheets

90

80

TC = 25˚C

70

) – Amps

T

i

60

50

40

30

20

10

Instantaneous On-state Current (

0

0 0.6 0.8 1.0 1.2 1.4 1.6

12 A Devices

6 A to 10 A Devices

25 A Devices

15 A to 20 A Devices

1 A Devices

Instantaneous On-state Voltage (vT) – Volts

Figure E6.19 Instantaneous On-state Current versus On-state Voltage

(Typical) (6 A through 25 A)

Figure E6.21 Normalized DC Gate-trigger Voltage versus

1.5

1.0

= 25 ˚C)

GT

C

V

(T

GT

V

0.5

Ratio of

0

-40 -15 +25 +65 +105 +125

Case Temperature (TC) – ˚C

Case Temperature

200

180

160

TC = 25˚C

140

120

) – Amps

T

i

100

65 A and 70 A Devices

80

Current (

60

Instantaneous On-state

55 A Devices

40

20

0

35 A to 40 A Devices

0 .6 .8 1.0 1.2 1.4 1.6

Instantaneous On-state Voltage (v

) – Volts

T

Figure E6.20 Instantaneous On-state Current versus On-state Voltage

(Typical) (35 A through 70 A)

7

6 A to 12 A Devices

6

5

) – µs

gt

4

1 A Devices

3

Turn-on Time (t

2

1

0

10 20 30 40 50 60 80 100 200

15 A to 35 A Devices

TC = 25˚C

40 A to 70 A Devices

DC Gate Trigger Current (IGT) – mA

Figure E6.22 Typical Turn-on Time versus Gate-trigger Current

Data Sheets SCRs

70 A Devices

65 A TO-218

55 A Devices

25 A Devices

35 A Devices

20 A Devices

16 A Devices

15 A Devices

12 A Devices

10 A Devices

1 A Devices

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [I

T(RMS)

]: Max-

Rated Value at Specified Case Temperature

Notes:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

8 A Devices

6 A Devices

1000

800 600

500 400

) – Amps

300

200

TSM

100

80 60

50 40

30

20

10

8

6 5

4

3

2

Peak Surge (Non-repetitive) On-state Current (I

1

1 23 54 6 7 8 10 20 30 40 60 80100 200 300400 600 1000

Surge Current Duration – Full Cycles

Figure E6.23 Peak Surge Current versus Surge Current Duration

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

1.0 A Devices

0

0 0.2 0.4 0.6 0.8

RMS On-state Current [I

T(RMS)

1.0

] – Amps

] – Watts

1.0

D(AV)

0.8

0.6

0.4

Average On-state Power

Dissipation [P

0.2

40 A Devices

18

CURRENT WAVEFORM: Half Sine Wave

16

LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

14

] – Watts

12

D(AV)

10

8

6

Average On-state

4

2

Power Dissipation [P

0

0481216

6 A to 10 A Devices

2 6 10 14 18

RMS On-state Current [I

15 A to 20 A Devices

12 A Devices

T(RMS)

20

] – Amps

Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current

(1 A)

Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current

(6 A through 20 A)

SCRs Data Sheets

32

CURRENT WAVEFORM: Half Sine Wave

28

LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

24

] x– Watts

20

D(AV)

16

12

Average On-state

8

4

Power Dissipation [P

0

0 8 16 24 32

25 A TO-220 Devices

412202836

RMS On-state Current [I

T(RMS)

35 A Devices

] – Amps

Figure E6.26 Power Dissipation (Typical) versus RMS On-state Current

(25 A and 35 A)

60

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

50

40

] – Watts

D(AV)

30

Average On-state

20

Power Dissipation [P

10

0

0 10203040506070

RMS On-state Current [I

65 A and 70 A Devices

40 A and 55 A Devices

T(RMS)

] – Amps

Figure E6.27 Power Dissipation (Typical) versus RMS On-state Current

(40 A through 70 A)

File #E71639

U.L. RECOGNIZED

E7

TO-220

Isolated

AC

E7

General Description

Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock requirements.

Teccor's silicon rectifiers feature glass-passivated junctions to ensure long term reliability and stability. In addition, glass offers a rugged, reliable barrier against junction contamination.

Rectifiers

(15 A to 25 A)

Features

• Electrically-isolated packages

• High voltage capabilities — 200 V to 1000 V

• High surge capabilities — up to 350 A

• Glass-passivated junctions

Rectifiers Data Sheets

Typ e

15 A

20 A

25 A

Part Number

Isolated

Not Used

C

A

TO-220

See “Package Dimensions”

section for variations. (4) MIN MIN MAX MAX MAX MAX TYP

D2015L 200 200 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

D4015L 400 400 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

D6015L 600 600 9.5 15 225/188 0.1 0.5 1 1.6 210 2.58

D8015L 800 800 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

DK015L 1000 1000 9.5 15 225/188 0.1 3 1.6 210 2.85

D2020L 200 200 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D4020L 400 400 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D6020L 600 600 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D8020L 800 800 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

DK020L 1000 1000 12.7 20 300/255 0.1 3 1.6 374 2.5

D2025L 200 200 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D4025L 400 400 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D6025L 600 600 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D8025L 800 800 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

DK025L 1000 1000 15.9 25 350/300 0.1 3 1.6 508 2.7

V

Vol ts Vol ts

RRM

V

RIF(AV)IF(RMS)

(1)

Amps Amps

I

FSM

(2)

Amps

60/50 Hz

T

C

25 °C

I

RM

(3)

mA Volts

=

TC =

100 °C

V

TC =

125 °CT

=25 °C

C

FM

I2t

Amps

2

Sec °C/W

R

θJC

Test Conditions

I2t — RMS surge (non-repetitive) forward current for 8.3 ms for fusing

— Average forward current

I

F(AV)

— RMS forward current

I

F(RMS)

I

— Peak one-cycle surge current

FSM

— Peak reverse current

I

RM

— Thermal resistance (steady state) junction to case

R

JC

θ

V

— Peak forward voltage at rated average forward current

FM

— DC blocking voltage

V

R

— Peak repetitive reverse voltage

V

RRM

General Notes

• Operating temperature range (TJ) is -40 °C to +125 °C.

• Storage temperature range (T

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum at a minimum of 1/16" (1.59 mm) from case.

• The case temperature (T outline drawings in the “Package Dimensions” section of this catalog.

• Teccor's electrically-isolated TO-220 devices withstand a high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range.

• Typical Reverse Recovery Time (t

0.9 A forward current and 1.5 A reverse current)

) is -40 °C to +125 °C.

S

) is measured as shown on dimensional

C

) is 4 µs. (Test conditions =

rr

Electrical Specification Notes

(1) See Figure E7.3 for current rating at specified case temperature.

(2) For more than one full cycle rating, see Figure E7.4.

= TJ for test conditions

(3) T

C

(4) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

2500 4000

* UL Recognized File #E71639 ** For 4000 V isolation, use “V” suffix in the part number.

TO-220

Isolated

Standard

Optional **

Data Sheets Rectifiers

15 A Devices

TC = 25˚C

20 A Devices

25 A Devices

140

120

) – Amps

F

i

100

80

60

40

20

Instantaneous Forward Current (

0

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Instantaneous Forward Voltage (vF) – Volts

Figure E7.1 Instantaneous Forward Current versus Forward Voltage

(Typical)

20

SINGLE PULSE RECTIFICATION

16

60 Hz SINE WAVE

] – Watts

F(AV)

12

Average Forward

8

15 A Devices

4

20 A Devices

25 A Devices

1000

800 600

400 300

) – Amps

200

FSM

100

80 60

40 30

Peak Surge (Non-repetitive)

Forward Current (I

20

10

1 2 4 6 10 20 40 60 100 200 400 600 1000

15 A Devices

SUPPLY FREQUENCY: 60 Hz Sinewave LOAD: Resistive or Inductive RMS ON-STATE CURRENT: [I Maximium Rated Value at Specified Case Temperature

F(RMS)

20 A Devices

]

25 A Devices

Surge Current Duration – Cycles

Figure E7.4 Peak Surge Forward Current versus Surge Current

Duration

Power Dissipation [P

0

Average Forward Current [I

F(AV)

] – Amps

Figure E7.2 Forward Power Dissipation (Typical)

125

120

) – ˚C

C

115

110

105

100

95

90

85

80

75

Maximum Allowable Case Temperature (T

70

0

02468101214

Figure E7.3 Maximum Allowable Case Temperature versus

Average Forward Current [I

Average Forward Current

SUPPLY FREQUENCY: 60 Hz Sine Wave LOAD: Resistive or Inductive CASE TEMPERATURE: Measured As Shown on Dimensional Drawing

20 A Devices

15 A Devices

] – Amps

F (AV)

25 A Devices

120 2 4 6 8 101214

16

Notes

DO-35

E8

DO-214

E8

General Description

Teccor’s HT and ST Series of bilateral trigger diacs offer a range of voltage characteristics from 27 V to 45 V.

A diac semiconductor is a full-wave or bidirectional thyristor. It is triggered from a blocking- to conduction-state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the diac.

The Teccor line of diacs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

The diac specifications listed in this data sheet are for standard products. Special parameter selections such as close tolerance voltage symmetry are available. Consult the factory for more information about custom design applications.

Diac

HT and ST Series

Features

• Bilateral triggering device

• Glass-passivated junctions

• Wide voltage range selections

ST Series

• Epoxy SMT package

• High-temperature, solder-bonded die attachment

HT Series

• DO-35 trigger package

• Pre-tinned leads

2002 Teccor Electronics E8 - 1 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Diac Data Sheets

Electrical Characteristics TC = 25°C

Part No.

DO-35 DO-214

HT-32 ST-32 27 37 3 (1) 10 (2) 25 2

HT-32A / HT-5761 28 36 2 (1) 7 at 10 mA (4) 25 2

HT-32B / HT-5761A ST-32B 30 34 2 (1) 7 at 10 mA (4) 25 2

HT-34B ST-34B 32 36 2 (1) 10 (2) 25 2

HT-35 ST-35 30 40 3 (1) 10 (2) 25 2

HT-36A / HT-5762 ST-36A 32 40 2 (1) 7 at 10 mA (4) 25 2

HT-36B ST-36B 34 38 2 (1) 10 (2) 25 2

HT-40 ST-40 35 45 3 (1) 10 (2) 25 2

V

BO

Breakover Voltage

(Forward and

Reverse)

Volts

MIN MAX MAX MIN MAX MAX

∆V

BO

Breakover Voltage

Symmetry

=

∆V

BO

| - | - VBO | ]

[ | +V

BO

Volt s

V

BB

Dynamic

Breakback

Vol tage

(3)

| ∆V± |

Vol ts

I

BO

Peak Breakover

Current

at

Breakover

Vol tage

µAmps

I

TRM

Peak Pulse

Current for 10 µs 120 PPS

T

≤40 °C

A

Amps

General Notes

10 mA

Current

V

• Lead solder temperature is +230 °C for 10-second maximum;

≥1/16" (1.59 mm) from case.

• See “Package Dimensions” section of this catalog.

Electrical Specification Notes

(1) Breakover voltage symmetry as close as 1 V is available from the

factory on these products.

(2) See Figure E8.4 and Figure E8.5 for test circuit and waveforms.

(3) Typical switching time is 900 nano-seconds measured at I

PK

(Figure E8.4) across a 20 Ω resistor (Figure E8.5). Switching time is defined as rise time of I

between the 10% to 90% points.

PK

(4) See V-I Characteristics.

Bilateral Trigger DIAC Specifications

• Maximum Ratings, Absolute-Maximum Values

– Maximum Trigger Firing Capacitance: 0.1 µF – Device dissipation (at T

250 mW for DO-35 and 300 mW for DO-214

– Derate above +40 °C:

3.6 mW/°C for DO-35 and 3 mW/°C for DO-214

• Temperature Ranges

Storage: -40 °C to +125 °C Operating (Junction): -40 °C to +125 °C

= -40 °C to +40 °C):

A

-V

BO

V-I Characteristics

HT and ST Series Thermal Resistance

(based on maximum lead temperature of

90 °C for DO-214 and 85 °C for DO-35 devices)

Y Package

DO-35

Breakover

Current

I

BO

Breakover

Junction to Lead - R

Junction to Ambient [R

Voltage

V

BO

θ

JL

θ

JA

: °C/W

]: °C/W

S Package

+V

BO

DO-214

Voltage

100 [278] °C/W 65 °C/W *

2

* Mounted on 1 cm

http://www.teccor.com E8 - 2

copper foil surface; two-ounce copper foil

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

Data Sheets Diac

LOAD — Up to 1500 W

3.3 k

120 V ac

60 Hz

200 k

0.1 µF

100 V

Triac

Q2015L5

HT-35

Bilateral

Trigger

Diac

MT2

G

MT1

Figure E8.1 Typical Diac/Triac Full-wave Phase Control Circuit Using

Lower Voltage Diacs.

10

5.0

3.0

2.0

1.0

) – Amps

TRM

0.5

0.3

0.2

0.1

0.05

0.03

0.02

.01

Safe Operating

Area

.005

Repetitive Peak On-state Current (I

.003 .002

PULSE REPETITION RATE = 120 pps

.001

1246 200 4006001000 2000 4000 10000

T

= 40 ˚C

A

10 20 40 60 100

Base Pulse Duration – µs

Figure E8.2 Repetitive Peak On-state Current versus Pulse Duration

2002 Teccor Electronics E8 - 3 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Diac Data Sheets

+8

+6

+4

+2

Change – %

HT Series

BO

0

-2

-4

-6

Percentage of V

-8

-40 -20 0 +20 +40 +60 +80 +100 +120

ST Series

Junction Temperature (TJ) – ˚C

+140

47 k

120 V rms

60 Hz

* Adjust for one firing in each half cycle. D.U.T. = Diac

100 k

V

C

*

D.U.T.

R

C

T

O.1 µF

L

I

L

20 Ω

1%

Figure E8.3 Normalized VBO Change versus Junction Temperature

V

C

+V

BO

0

-V

BO

I

L

+I

PK

0

-I

PK

Typical pulse base width is 10 µs

∆V+

t

∆V-

t

Figure E8.4 Test Circuit Waveforms (Refer to Figure E8.5.)

Figure E8.5 Circuit Used to Measure Diac Characteristics

(Refer to Figure E8.4.)

300

250

) – mA

PK

200

150

100

50

Peak Output Current (I

0

.01 .02 .03 .04 .05 .06 .07 .08 .09

Typical (35 V Device)

.10

Triggering Capacitance (CT) – µF

Figure E8.6 Peak Output Current versus Triggering Capacitance

(Per Figure E8.5 with RL of 20 Ω)

http://www.teccor.com E8 - 4

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

DO-214

Surface Mount

E9

DO-15X

TO-92

Type 70

TO-202

Sidac

E9

General Description

The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device.

Teccor’s sidacs feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

(79 V to 330 V)

Applications

• High-voltage lamp ignitors

• Natural gas ignitors

• Gas oil ignitors

• High-voltage power supplies

• Xenon ignitors

• Overvoltage protector

• Pulse generators

• Fluorescent lighting ignitors

• HID lighting ignitors

Features

• AC circuit oriented

• Glass-passivated junctions

• High surge current capability

Sidac Data Sheets

Part No.

(10)

Typ e

TO-92 DO-15X

See “Package Dimensions” section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX

K0900E70 K0900G K0900S 1 ±70 79 97 5 10 60 150

K1050E70 K1050G K1050S 1 ±90 95 11 3 5 10 60 150

K1100E70 K1100G K1100S 1 ±90 104 11 8 5 10 60 150

K1200E70 K1200G K1200S 1 ±90 11 0 125 5 10 60 150

K1300E70 K1300G K1300S 1 ±90 120 138 5 10 60 150

K1400E70 K1400G K1400S 1 ±90 130 146 5 10 60 150

K1500E70 K1500G K1500S 1 ±90 140 170 5 10 60 150

K2000E70 K2000G K2000F1 K2000S 1 ±180 190 215 5 10 60 150

K2200E70 K2200G K2200F1 K2200S 1 ±180 205 230 5 10 60 150

K2400E70 K2400G K2400F1 K2400S 1 ±190 220 250 5 10 60 150

K2500E70 K2500G K2500F1 K2500S 1 ±200 240 280 5 10 60 150

TO-202

K3000F1 1 ±200 270 330 5 10 60 150

DO-214

Specific Test Conditions

di/dt — Critical rate-of-rise of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated V

T

≤ 100 °C

J

— Breakover current 50/60 Hz sine wave

I

BO

— Repetitive peak off-state current 50/60 Hz sine wave; V = V

I

DRM

IH — Dynamic holding current 50/60 Hz sine wave; R = 100 Ω

— On-state RMS current TJ ≤ 125 °C 50/60 Hz sine wave

I

T(RMS)

— Peak one-cycle surge current 50/60 Hz sine wave (non-

I

TSM

repetitive)

— Switching resistance 50/60 Hz sine wave

R

S

— Breakover voltage 50/60 Hz sine wave

V

BO

— Repetitive peak off-state voltage

V

DRM

— Peak on-state voltage; IT = 1 A

V

TM

V

–()

BOVS

--------------------------------=

R

S

–()

ISI

BO

DRM

;

DRM

I

T(RMS)

(7) (8)

Amps Volts

V

DRM

V

BO

(1)

Volt s µAmps

I

DRM

I

BO

(2)

µAmps

I

(3) (4)

mAmps

Electrical Specification Notes

(1) See Figure E9.5 for VBO change versus junction temperature.

(2) See Figure E9.6 for I

(3) See Figure E9.2 for I

(4) See Figure E9.13 for test circuit.

(5) See Figure E9.1 for more than one full cycle rating.

≤ 90 °C for TO-92 Sidac

(6) T

C

≤ 105 °C for TO-202 Sidacs

T

C

≤ 100 °C for DO-15X

T

L

≤ 90 °C for DO-214

T

L

(7) See Figure E9.14 for clarification of sidac operation.

(8) For best sidac operation, the load impedance should be near or

less than switching resistance.

(9) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(10) Do not use electrically connected mounting tab or center lead.

versus junction temperature.

BO

versus case temperature.

H

General Notes

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Storage temperature range (T

•The case (T

) or lead (TL) temperature is measured as shown on

C

the dimensional outline drawings in the “Package Dimensions” section of this catalog.

• Junction temperature range (T

• Lead solder temperature is a maximum of +230 °C for 10-second maximum; ≥1/16" (1.59 mm) from case.

) is -65 °C to +150 °C.

S

) is -40 °C to +125 °C.

J

I

R

=

S

DRM

(V

BO

(IS - IBO)

- VS)

-V

+I

I

T

I

H

I

S

I

BO

V

T

-I

R

S

+V

V

BO

V

S

V

DRM

V-I Characteristics

Data Sheets Sidac

V

TM

I

TSM

(5)

R

S

dv/dt di/dt

(8)

Vol ts MAX

Package 60 Hz 50 Hz

Amps

kΩ Volts/µSec Amps/µSec

EGF S MIN MIN TYP

1.5 1.5 1.5 20 16.7 0.1 1500 150

1.5 1.5 3 1.5 20 16.7 0.1 1500 150

3 20 16.7 0.1 1500 150

Thermal Resistance (Steady State)

R

[R

θJC

] °C/W (TYPICAL)

θJA

2.0

E Package G Package F Package S Package

1.5

C)

˚

H

I

= 25

C

1.0

(T

H

I

.5

35 [95] 18 [75] 7 [45] ** 30 * [85]

Ratio of

* Mounted on 1 cm2 copper foil surface; two-ounce copper foil

R

for TO-202 Type 23 and Type 41 is 70 °C/Watt.

**

θJA

100

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: I

40

Value at Specified Junction Temperature

RMS Maximum Rated

T

0

-15-40 +25 +65 +105 +125

Case Temperature (TC) – ˚C

Figure E9.2 Normalized DC Holding Current versus Case/Lead

Temperature

] – Amps

TSM

20

10

8.0

6.0

4.0

Notes:

Peak Surge (Non-repetitive)

1) Blocking capability may be lost during and immediately following surge

On-state Current [I

current interval.

2.0

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

1.0

1.0 10 100 1000

Surge Current Duration – Full Cycles

Figure E9.1 Peak Surge Current versus Surge Current Duration

Sidac Data Sheets

6

di/dt Lim

600 400

200

100

80

) – Amps

60 40

TRM

20

10

8

Repetitive Peak

6 4

f = 10 kHz

2

On-state Current (I

0.8

0.6

f = 20 kHz

1

2 x 10-3

f = 100 H

f = 1 kHz

f = 5 kHz

68

4

1 x 10-2

Pulse base width (to) – ms

it Line

N

on-R

epeate

d

Repetition Frequency f=5 Hz

f = 10 Hz

z

2468

I

TRM VBO Firing Current Waveform

T

24681

1 x 10-1

to

= 125 ºC Max

J

9

l/f

8 7 6

5 4

3

) Multiplier

BO

2

Current (I

Repetitive Peak Breakover

1

20 30 40 50 60 8070 90 100 110 120

V = V

BO

130

Junction Temperature (TJ) – ˚C

Figure E9.3 Repetitive Peak On-state Current (I

Pulse Width at Various Frequencies

140

) – ˚C

A

120

100

80

60

40

25

Maximum Allowable Ambient Temperature (T

20

0 0.2 0.4 0.6 0.8 1.0

RMS On-state Current [I

CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING

TO-202

Type 1

DO-15X and TO-202 Type 23 and

T

O

-9 2

a

n

d

D

O

-2

T(RMS)

1

4

TRM

] – Amps

) versus

41

Figure E9.4 Maximum Allowable Ambient Temperature versus

On-state Current

+4

+2

0

-2

Change – %

BO

V

-4

-6

-8

Percentage of

-10

-12

-40

-20 0 +20 +40 +60 +80 +100 +120

Figure E9.5 Normalized V

K2xxxF1

K1xxxE K1xxxG K1xxxS

K2xxxE K2xxxG K2xxxS

+25

Junction Temperature (TJ) – ˚C

Change versus Junction Temperature

BO

+140

Figure E9.6 Normalized Repetitive Peak Breakover Current versus

Junction Temperature

9

8

7

6

) – Amps

T

5

4

3

2

On-state Current (i

Positive or Negative Instantaneous

1

0

TL = 25 ˚C

TO-92, DO-214 and DO-15X "E", "S" and "G" Packages

TO-202 "F" Package

0

0.8 1.21.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Figure E9.7 On-state Current versus On-state Voltage (Typical)

CURRENT WAVEFORM: Sinusoidal

2.2

LOAD: Resistive or Inductive CONDUCTION ANGLE:

2.0

See Basic Sidac Cirucit

1.8

1.6

] – Watts

1.4

D(AV)

1.2

TO-202 "F" Package

1.0

Average On-state

0.8

0.6

Power Dissipation [P

0.4

0.2

0

0.2

RMS On-state Current [I

"E", "S" and "G" Packages TO-92, DO-214 and DO-15X

0.6 0.8

0.4

T(RMS)

1.0

] – Amps

Figure E9.8 Power Dissipation (Typical) versus On-state Current

[Refer to Figure E9.14 for Basic Sidac Circuit]

Data Sheets Sidac

SCR Sidac

100-250 V ac 60 Hz

Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit

4.7 µF

10 µF

- +

50 V

24 V ac

60 Hz

- +

100 V

+

4.7 µF

100 V

-

4.7 k

½ W

1.2 µF

200 V

K1200E

Sidac

100

10 µF

- +

250 V

2 W

120 V ac

60 Hz

Figure E9.12 Xenon Lamp Flashing Circuit

Push to test

S1

100-250 V ac 60 Hz

S1

I

PK

Trace Stops

+

10 µF 450 V

-

Xenon Lamp

4 kV

Trigger

Transformer

Switch to test in each direction

100 Ω

1%

Scope

K2200G

20:1

Sidac

200-

400 V

Device Under Test

20 M

0.01 µF 400 V

Ignitor

Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition

Sidac

120 V ac

60 Hz

Ballast

3.3 k

0.47 µF

400 V

16 mH

Lamp

Sidac

220 V ac

60 Hz

Ballast

0.22 µF

7.5 k

120 V ac 220 V ac

Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit

H.V.

Lamp

I

H

Scope Indication

Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs

V

100-250 V ac

60 Hz

BO

I

H

Load

V

BO

V

BO

Conduction

120-145

Angle

˚

Load Current

Figure E9.14 Basic Sidac Circuit

I

H

I

H

Sidac Data Sheets

(a) Circuit

(b) Waveforms

t

V

DC(IN) ≥ VB0

V

R

SIDAC

V

C

I

L

BO

V

C

R

L

I

L

R

max

R

min

Figure E9.15 Relaxation Oscillator Using a Sidac

(See Note B)

R

BB1

Input

50 Ω

2N6127

(or equivalent)

50 Ω

V

=10 V

BB1

150 Ω

+

-

=

R

BB2

100 Ω

V

BB2

=0

Test Circuit

Note A: Input pulse width is increased until ICM = 0.63 A.

=

≤

≥

V

IN - VBO

I

BO

V

IN - VTM

I

H (MIN)

VCE Monitor

TIP-47

VCC = 20 V

R

= 0.1 Ω

S

100 mH

+

-

Monitor

I

C

Input

Voltage

Collector

Current

Sidac V

Collector

Voltage

V

tw ≈ 3 ms

0 V

(See Note A)

t

w

5 V

0.63 A

0

BO

10 V

CE(sat)

Voltage and Current Waveforms

t

100 ms

Note B: Sidac (or Diac or series of Diacs) chosen so that V The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the

is just below V

BO

rating of transistor to be protected.

CEO

transistor could be destroyed.

Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements

M1

Package Dimensions

M1

This section contains the dimensions for the following packages:

• F Package — TO-202AB, Type 1 (Non-isolated)

• Y Package — DO-35 or DO-204AH

• R Package — TO-220AB (Non-isolated)

• L Package — TO-220AB (Isolated)

• P Package — TO-3 Fastpak (Isolated)

• E Package — TO-92 (Isolated)

• S Package — DO-214AA

• M Package — TO-218AC (Non-isolated)

• K Package — TO-218AC (Isolated)

• W Package — TO-218X (Non-isolated)

• J Package — TO-218X (Isolated)

• G Package — DO-15X Axial Lead

• C Package — Compak

• N Package — TO-263

• D Package — TO-252

• V Package — TO-251

2002 Teccor Electronics M1 - 1 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Package Dimensions Data Sheets

o

p

F Package — TO-202AB, Type 1

Non-isolated Mounting Tab Common with MT2 / Anode / PIN 2

A

Tab Common to

MT2 / Anode / PIN 2

R

DIA.

Case

Temperature

Measurement

Point

MT1 / Cathode / PIN 1

MT2 / Anode / PIN 2

M

Notes: (1) Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm) (2) Pin 2 and mounting tab are electrically connected. Do not use either for Sidac o

eration.

B

C

E

H

J

K

L

Gate / Trigger / PIN 3

0.070 x 45 All Types

S

G

D

F

˚

Q

Chamfer Common t

Inches Millimeters

Dimension

MIN MAX MIN MAX A 0.365 0.385 9.27 9.78 B 0.243 0.253 6.17 6.43 C 0.110 0.120 2.79 3.05 D 0.780 0.810 19.81 20.57 E 0.290 0.310 7.37 7.87 F 0.400 0.430 10.16 10.92

G 0.052 0.062 1.32 1.58

H 0.055 0.065 1.40 1.65 J 0.023 0.029 0.58 0.74 K 0.095 0.105 2.41 2.67 L 0.195 0.205 4.95 5.21

M 0.049 0.059 1.24 1.50

N P

N 0.017 0.023 0.43 0.58 P 0.055 0.065 1.40 1.65

Q 0.175 0.185 4.45 4.70

R 0.124 0.130 3.15 3.30 S 0.390 0.405 9.91 10.29

1

E

TYP

A

DIA.

B

D DIA. TYP

Y Package — DO-35 or DO-204AH

Inches Millimeters

Dimension

A 0.060 0.090 1.530 2.280 B 0.015 0.381 C 0.135 0.165 3.430 4.190 D 0.018 0.022 0.458 0.558 E 1.000 25.400

C

1

(1) Package contour optional within dimensions A and C. Slugs, if any,

shall be included within this cylinder but shall not be subject to the minimum limit of Dimension A.

(2) Lead diameter is not controlled in this zone to allow for flash, lead

B

2

finish build-up, and minor irregularities other than slugs.

MIN MAX MIN MAX

http://www.teccor.com M1 - 2

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

Data Sheets Package Dimensions

R Package — TO-220AB

Non-isolated Mounting Tab Common with Center Lead

R Package MT2 / Anode

C

D

E

DIA.

G

R

A O

B

F

Case Temperature Measurement Point

Notch in gate lead identifies non-isolated tab

Gate/Trigger * MT2 / Anode MT1 / Cathode

H

L

K

J

P

N M

* The gate pin is not used

on diode rectifiers.

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

L Package — TO-220AB

Dimension

A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.66 2.92 C 0.230 0.250 5.85 6.35 D 0.590 0.620 14.98 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.80 3.30 G 0.540 0.575 13.71 14.60 H 0.025 0.035 0.63 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91

M 0.070 0.085 1.78 2.16

N 0.018 0.024 0.45 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.53 R 0.038 0.048 0.97 1.22

Isolated Mounting Tab

Inches Millimeters

MIN MAX MIN MAX

R Package MT2 / Anode

C

D

E

DIA.

G

R

A O

B

F

Case

Temperature

Measurement

Point

Gate/Trigger *

MT2 / Anode

MT1 / Cathode

H

L

K

J

P

N M

* The gate pin is not used

on diode rectifiers.

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

Inches Millimeters

Dimension

MIN MAX MIN MAX A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.66 2.92 C 0.230 0.250 5.85 6.35 D 0.590 0.620 14.98 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.80 3.30 G 0.540 0.575 13.71 14.60 H 0.025 0.035 0.63 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91

M 0.070 0.085 1.78 2.16

N 0.018 0.024 0.45 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.53 R 0.038 0.048 0.97 1.22

2002 Teccor Electronics M1 - 3 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Package Dimensions Data Sheets

3

P Package — TO-3 Fastpak

Isolated Mounting Base

F

TC Measuring Point

Φ

J (MT1, MT2)

5-ΦN

A

B

D

Dimension

A 1.531 1.543 38.90 39.20 B 1.177 1.185 29.90 30.10

Inches Millimeters

MIN MAX MIN MAX

C 0.843 0.850 21.40 21.60 D 0.780 0.795 19.80 20.20

MT2

H

E 0.783 0.791 19.90 20.10 F 0.874 0.906 22.20 23.00

G 0.161 0.169 4.10 4.30

MT1

Gate

Φ G

H 0.386 0.465 9.80 11.80

I 0.508 0.587 12.90 14.90

J 0.079 0.087 2.00 2.20

E

C

K 0.047 0.055 1.20 1.40 L 0.307 0.319 7.80 8.10

M 0.372 0.396 9.45 10.05

I

T

U

Φ

K (Gate)

N 0.043 0.059 1.10 1.50

O 0.315 0.331 8.00 8.40

P 0.098 0.106 2.50 2.70

Q 0.846 0.886 21.50 22.50

R 0.244 0.256 6.20 6.50

L

M

S

R

Q

O

P

S 0.106 0.130 2.70 3.30 T (MT1) 0.321 0.329 8.15 8.35 T (MT2) 0.321 0.329 8.15 8.35

T (Gate) 0.220 0.228 5.60 5.80

U (MT1) 0.246 0.254 6.25 6.45 U (MT2) 0.246 0.254 6.25 6.45

U (Gate) 0.183 0.191 4.65 4.85

V 0.120 0.130 3.05 3.30

W 0.175 0.185 4.45 4.70

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

E Package — TO-92

T

Measuring Point

C

Dimension

A

A 0.176 0.196 4.47 4.98

B 0.500 12.70

D 0.095 0.105 2.41 2.67

E 0.150 3.81

F 0.046 0.054 1.16 1.37

G 0.135 0.145 3.43 3.68

B

H 0.088 0.096 2.23 2.44

J 0.176 0.186 4.47 4.73

K 0.088 0.096 2.23 2.44

L 0.013 0.019 0.33 0.48

Cathode /

MT1 / PIN 1

Gate / PIN 2

M

L

E

F

D

K

J

Anode / MT2 / PIN

G

H

M 0.013 0.017 0.33 0.43

All leads insulated from case. Case is electrically nonconductive.

http://www.teccor.com M1 - 4 +1 972-580-7777 Thyristor Product Catalog

Inches Millimeters

MIN MAX MIN MAX

2002 Teccor Electronics

Data Sheets Package Dimensions

S Package — DO-214AA

E

0.079 (2.0)

B D

0.079 (2.0)

0.110 (2.8)

Pad Outline

Temperature

TC / T

L

Measurement Point

Dimension

Inches Millimeters

MIN MAX MIN MAX

A 0.140 0.155 3.56 3.94

A

C

B 0.205 0.220 5.21 5.59 C 0.077 0.083 1.96 2.11 D 0.166 0.180 4.22 4.57 E 0.036 0.056 0.91 1.42 F 0.073 0.083 1.85 2.11 G 0.004 0.008 0.10 0.20

H

F

L

J

K

G

H 0.077 0.086 1.96 2.18 J 0.043 0.053 1.09 1.35 K 0.008 0.012 0.20 0.30 L 0.027 0.049 0.69 1.24

Dimensions are in inches (and millimeters).

M Package — TO-218AC

Non-Isolated Mounting Tab Common with Center Lead

K Package — TO-218AC

Isolated Mounting Tab

T

Measurement Point

C

B

U DIA.

M Package MT2 / Anode

C

D

Dimension

A 0.810 0.835 20.57 21.21 B 0.610 0.630 15.49 16.00

Inches Millimeters

MIN MAX MIN MAX

C 0.178 0.188 4.52 4.78

A

MT1 / Cathode / PIN 1

MT2 / Anode / PIN 2

F

P

R

E

Gate / PIN 3

M

Q

N 3 Times

W

J

H

G

D 0.055 0.070 1.40 1.78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64 G 0.022 0.029 0.56 0.74 H 0.075 0.095 1.91 2.41 J 0.575 0.625 14.61 15.88 K 0.211 0.219 5.36 5.56 L 0.422 0.437 10.72 11.10

M 0.058 0.068 1.47 1.73

N 0.045 0.055 1.14 1.40 P 0.095 0.115 2.41 2.92

K

L

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

Q 0.008 0.016 0.20 0.41 R 0.008 0.016 0.20 0.41 U 0.159 0.163 4.04 4.14

W 0.085 0.095 2.17 2.42

2002 Teccor Electronics M1 - 5 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Package Dimensions Data Sheets

W Package — TO-218X

Non-isolated Mounting Tab Common with Center Lead

J Package — TO-218X

Isolated Mounting Tab

Measurement

Point

MT1 / Cathode

W Package MT2 / Anode

T

c

C

B

U DIA.

D

DIM

A 0.810 0.835 20.57 21.21

INCHES MILLIMETERS

MIN MAX MIN MAX

B 0.610 0.630 15.49 16.00 C 0.178 0.188 4.52 4.78

A

F

Z

E

D 0.055 0.070 1.40 1.78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64

G 0.022 0.029 0.56 0.74

H 0.075 0.095 1.91 2.41

W

N

T

M

Y

K

L

V

X

J

Gate

R

S

P

MT2 / Anode

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

G

H

J 0.575 0.625 14.61 15.88 K 0.256 0.264 6.50 6.71 L 0.220 0.228 5.58 5.79

M 0.080 0.088 2.03 2.24

N 0.169 0.177 4.29 4.49 P 0.034 0.042 0.86 1.07 R 0.113 0.121 2.87 3.07 S 0.086 0.096 2.18 2.44 T 0.156 0.166 3.96 4.22 U 0.159 0.163 4.04 4.14 V 0.603 0.618 15.31 15.70

W 0.000 0.005 0.00 0.13

X 0.003 0.012 0.07 0.30 Y 0.028 0.032 0.71 0.81 Z 0.085 0.095 2.17 2.42

L

TL Measuring Point

G Package — DO-15X

Axial Lead

G

L

φD

Dimension

φB2 0.027 0.035 0.686 0.889

φD 0.104 0.150 2.640 3.810

G 0.230 0.300 5.840 7.620

L 1.000 25.400

φB2

Inches Millimeters

MIN MAX MIN MAX

http://www.teccor.com M1 - 6

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

Data Sheets Package Dimensions

C Package — Compak

TC / TL Temperature

Measurement Point

A

C

MT2 / Anode

0.110 (2.8)

0.079 (2.0)

B D

JE

0.079 (2.0)

Pad Outline

Inches Millimeters

Gate

M

N

P

Dimension

A 0.140 0.155 3.56 3.94 B 0.205 0.220 5.21 5.59 C 0.077 0.083 1.96 2.11

MIN MAX MIN MAX

D 0.166 0.180 4.22 4.57 E 0.036 0.056 0.91 1.42 F 0.073 0.083 1.85 2.11

MT1 / Cathode

G 0.004 0.008 0.10 0.20 H 0.077 0.086 1.96 2.18 J 0.043 0.053 1.09 1.35

F

H

K

0.079 (2.0)

L

G

0.040 (1.0)

0.030

(0.76)

Dimensions are in inches (and millimeters).

K 0.008 0.012 0.20 0.30 L 0.027 0.049 0.69 1.24

M 0.022 0.028 1

0.71

0.56

N 0.027 0.033 0.69 0.84 P 0.052 0.058 1.32 1.47

Case

Temperature

Measurement

MT1 / Cathode

(16.891)

W

0.665

Pad Outline

B

G

0.46

(11.684)

0.35

(8.89)

0.26

(6.604)

MT2 / Anode

A

F

D 2PL

0.085 (2.159)

0.17 (4.318)

0.15 (3.81)

0.08 (2.032)

V

S

K

Gate

0.115 (2.921)

N Package — TO-263

D2Pak Surface Mount

C

E

U

J

H

Dimensions are in inches (and millimeters).

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.360 0.370 9.14 9.40 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.63 0.89 E 0.048 0.055 1.22 1.40 F 0.060 0.075 1.52 1.91 G 0.095 0.105 2.41 2.67 H 0.083 0.093 2.11 2.36 J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 S 0.590 0.625 14.99 15.87 V 0.035 0.045 0.89 1.14 U 0.002 0.010 0.05 0.25

W 0.040 0.070 1.02 1.78

2002 Teccor Electronics M1 - 7 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Package Dimensions Data Sheets

D Package — TO-252AA

D-Pak Surface Mount

A

B

D

MT1 / Cathode

C

H

G

MT2 / Anode

Case Temperature Measurement Point

M K

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.236 0.244 6.00 6.20 B 0.379 0.409 9.63 10.39 C 0.176 0.184 4.47 4.67 D 0.035 0.050 0.89 0.27 E 0.087 0.093 2.21 2.36

Gate

L

O

F 0.027 0.033 0.69 0.84

G 0.205 0.213 5.21 5.41

H 0.251 0.261 6.38 6.63 J 0.040 0.050 1.02 1.27

F E

Dimensions are in inches (and millimeters).

0.063 (1.6)

0.264 (6.7)

.460

0.181 (4.6)

P

0.071 (1.8)

0.264 (6.7)

0.118 (3.0)

K 0.086 0.094 2.18 2.39 L 0.026 0.036 0.66 0.91

M 0.018 0.023 0.46 0.58

N 0.170 0.180 4.32 4.57

O 0.002 0.010 0.05 0.25

P 0.018 0.023 0.46 0.58

Pad Outline

A

B

C

MT1 / Cathode

MT2 / Anode

V Package — TO-251AA

V-Pak Through Hole

E

D

MT2 / Anode

Case Temperature Measurement Poin t

H

J

Mounting Ta b Internally Connected to MT2

Dimension

A 0.040 0.050 1.02 1.27 B 0.236 0.244 6.00 6.20 C 0.350 0.375 8.89 9.53 D 0.205 0.213 5.21 5.41 E 0.251 0.261 6.38 6.63 F 0.027 0.033 0.69 0.84

G 0.087 0.093 2.21 2.36

H 0.086 0.094 2.18 2.39

K

F

J 0.018 0.023 0.46 0.58 K 0.036 0.042 0.91 1.07 L 0.018 0.023 0.46 0.58

Gate

G

L

Inches Millimeters

MIN MAX MIN MAX

http://www.teccor.com M1 - 8

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

Teccor Electronics Thyristor Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual