TAOS TSL262, TSL261, TSL260 Datasheet



TSL260, TSL261, TSL262

IR LIGHTTOVOLTAGE OPTICAL SENSORS



TAOS021 – MAY 2000

 Integral Visible Light Cutoff Filter
 Monolithic Silicon IC Containing

PACKAGE

(FRONT VIEW)

Photodiode, Operational Amplifier, and
Feedback Components

 Converts Light Intensity to Output Voltage

321

 High Irradiance Responsivity Typically

42 mV/(µW/cm2) at λp = 940 nm (TSL260)

 Low Dark (Offset) Voltage . . . 10 mV

Max at 25°C, VDD = 5 V

 Single-Supply Operation
 Wide Supply Voltage Range ...3 V to 9 V
 Low Supply Current . . . 800 µA Typical at

VDD = 5 V

 Advanced Linear CMOS Technology

GND

Description

The TSL260, TSL261, and TSL262 are light-to-voltage optical sensors, each combining a photodiode and a
transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2 MΩ, respectively) on a single monolithic
integrated circuit. The output voltage is directly proportional to the infrared light intensity (irradiance) on the
photodiode. The TSL260, TSL261, and TSL262 are manufactured using advanced linear CMOS silicon-gate
technology, which provides good amplifier offset-voltage stability and low power consumption.

DD

OUTV

Functional Block Diagram

–
+

Terminal Functions

TERMINAL

NAME NO.

GND 1 Ground (substrate). All voltages are referenced to GND.
OUT 3 Output voltage
V

DD

2 Supply voltage

Voltage
Output

DESCRIPTION

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Texas Advanced Optoelectronic Solutions Inc.



800 Jupiter Road, Suite 205  Plano, TX 75074  [phone]



Copyright  2000, TAOS Inc.

1

TSL260, TSL261, TSL262

TEST

VOOut ut voltage

V

of out ut voltage (VO)

IR LIGHTTOVOLTAGE OPTICAL SENSORS

TAOS021 – MAY 2000

Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, VDD (see Note 1) 10 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, TA –25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 240°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NOTES: 1. All voltages are with respect to GND.

Recommended Operating Conditions

Supply voltage, V
Operating free-air temperature, T

Electrical Characteristics at VDD = 5 V , TA = 25°C, λp = 940 nm, RL = 10 kΩ (unless otherwise noted)
(see Note 3)

V
V

V

N

I

DD

NOTES: 3. The input irradiance Ee is supplied by a GaAs infrared-emitting diode with λp = 940 nm.

2. Output may be shorted to either supply.

DD

A

PARAMETER

DARK
OM

O

e

Dark voltage Ee = 0 3 10 3 10 3 10 mV
Maximum output Ee = 2.6 mW/cm

Output voltage

Temperature coefficient
of output voltage (VO)

Irradiance responsivity See Note 4 42 23 3.8 mV/(µW/cm2)

Supply current

4. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V.

TEST

CONDITIONS

Ee = 48 µW/cm
Ee = 87 µW/cm
Ee = 525 µW/cm
Ee = 48 µW/cm2,

TA = 0°C to 70°C
Ee = 87 µW/cm2,

TA = 0°C to 70°C
Ee = 525 µW/cm2,

TA = 0°C to 70°C

Ee = 48 µW/cm

No load

Ee = 87 µW/cm

No load

Ee = 525 µW/cm

No load

2
2

2,

2,

2

2

2,

TSL260 TSL261 TSL262

MIN TYP MAX MIN TYP MAX MIN TYP MAX

3.1 3.5 3.1 3.5 3.1 3.5 V
1 2 3

900 1600

±1

1 2 3

±1

900 1600

MIN NOM MAX UNIT

3 5 9 V
0 70 °C

UNIT

V

1 2 3

mV/°C

±1

µA

900 1600

Operating Characteristics at TA = 25°C (see Figure 1)

t

r

t

f

VnOutput noise voltage VDD = 5 V, f = 20 Hz 0.6 0.5 0.4 µV/√Hz

Copyright  2000, TAOS Inc.

2

PARAMETER TEST CONDITIONS

Output pulse rise time VDD = 5 V, λp = 940 nm 360 90 7 µs
Output pulse fall time VDD = 5 V, λp = 940 nm 360 90 7 µs



TSL260 TSL261 TSL262

MIN TYP MAX MIN TYP MAX MIN TYP MAX

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

UNIT

Pulse

Generator

IRED

(see Note A)

IR LIGHTTOVOLTAGE OPTICAL SENSORS

PARAMETER MEASUREMENT INFORMATION

V

TSL26x

TEST CIRCUIT

DD

2

–
+

3

1

R

Output

L

(see Note B)

Input

Output

E

e

TSL260, TSL261, TSL262

TAOS021 – MAY 2000

t

r

90%

10%

VOLTAGE WAVEFORM

90%

10%

t

f

NOTES: A. The input irradiance is supplied by a pulsed GaAs infrared-emitting diode with the following characteristics: λp = 940 nm, tr < 1 µs,

tf < 1 µs.

B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF.

Figure 1. Switching Times

TYPICAL CHARACTERISTICS

OUTPUT VOLTAGE

vs

PHOTODIODE SPECTRAL RESPONSE

1

TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

10

1

– Output Voltage – V

0.1

O

V

VDD = 5 V

λp = 940 nm

No Load
TA = 25°C

IRRADIANCE

TSL261

TSL260

TSL262

Relative Responsivity

0.01

0.1 1 10 100

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0.1
0

600 700 800 900

λ – Wavelength – nm

E

– Irradiance – µW/cm

e

2

1000

Figure 2 Figure 3





1000

Copyright  2000, TAOS Inc.

1100

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