TAOS TSL254, TSL253 Datasheet

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TSL253, TSL254

PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER

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TAOS022 – JANUARY 2000

 Monolithic Silicon IC Containing

Photodiode, Operational Amplifier, and

SR PACKAGE

(FRONT VIEW)

Feedback Components

 Converts Light Intensity to Output Voltage
 High Irradiance Responsivity...Typically

60 mV/(µW/cm2) at λp = 880 nm (TSL253)

321

 High Bandwidth
 Compact 3-Leaded Clear Plastic Package
 Low Dark (Offset) Voltage . . . 10 mV Max

At 25°C, VDD = 5 V

 Single-Supply Operation
 Wide Supply-Voltage Range . . . 2.7 V to

5.5 V

 Low Supply Current . . . 600 µA Typical at

VDD = 5 V

GND

Description

The TSL253 and TSL254 are light-to-voltage optical converters, each combining a 1-mm-square photodiode
and a transimpedance amplifier (feedback resistor = 16 MΩ, and 1 MΩ respectively) on a single monolithic IC.
Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices use
silicon-gate CMOS technology that provides improved amplifier offset-voltage stability and low power
consumption.

DD

OUTV

Functional Block Diagram

–
+

Terminal Functions

TERMINAL

NAME NO.

GND 1 Ground (substrate). All voltages are referenced to GND.
OUT 3 Output voltage
V

DD

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2 Supply voltage



Texas Advanced Optoelectronic Solutions Inc.

800 Jupiter Road, Suite 205  Plano, TX 75074  [phone]

Voltage
Output

DESCRIPTION

Copyright  2000, TAOS Inc.

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1

TSL253, TSL254

Tem erature coefficient of out ut

ngDD

µ √

PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER

TAOS022 – JANUARY 2000

Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, VDD (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) 25°C 5 s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, TA –25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

–25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 240°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltages are with respect to GND.

Recommended Operating Conditions

MIN MAX UNIT

Supply voltage, V
Operating free-air temperature, T

DD

A

2.7 5.5 V
0 70 °C

Electrical Characteristics at VDD = 5 V , TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)

PARAMETER TEST CONDITIONS

VDDark voltage Ee = 0 10 10 mV
VOMMaximum output voltage swing Ee = 2 mW/cm

VOOutput voltage

Temperature coefficient of output

α

vo

voltage (VO)

NeIrradiance responsivity 60 3.5 mV/(µW/cm2)

Power supply rejection, dc 60 60 dB
Power supply rejection, ac fac = 1 kHz 18 44 dB

I

Supply current 0.6 1.5 0.6 1.5 mA

DD

NOTES: 2. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm.

3. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V.

Ee = 35 µW/cm
Ee = 595 µW/cm
300 nm < λ < 700 nm –0.2 –0.2

λp = 880 nm 0.05 0.05

2

2

2

TSL253 TSL254

MIN TYP MAX MIN TYP MAX

3 3.5 3 3.5 V

1.6 2 2.4

1.6 2 2.4

UNIT

V

%/°C

†

Switching Characteristics at TA = 25°C (see Figure 1)

PARAMETER TEST CONDITIONS

t

Output pulse rise time VDD = 5 V, λp = 880 nm 7.5 2 µs

r

t

Output pulse fall time VDD = 5 V, λp = 880 nm 7.5 2 µs

f

V

Output noise voltage VDD = 5 V f = 1 kHz 3 1 µV/√Hz

n

2

TSL253 TSL254

MIN TYP MAX MIN TYP MAX

f = 100 Hz 3 1.7

f = 10 kHz 6 1.3

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UNIT

TSL253, TSL254

PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER

TAOS022 – JANUARY 2000

PARAMETER MEASUREMENT INFORMATION

V

DD

Pulse

Generator

IRED

(see Note A)

TSL25x

TEST CIRCUIT

NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λp = 880 nm,

tr < 1 µs, tf < 1 µs.

B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MHz, Ci ≤ 20 pF.

2

–
+

3

1

R

Output

L

(see Note B)

Figure 1. Switching Times

Input

Output

E

e

t

r

90%

10%

VOLTAGE WAVEFORM

90%

10%

t

f

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