TAOS TSL252R, TSL251R, TSL250R Datasheet



TSL250R, TSL251R, TSL252R

LIGHTTOVOLTAGE OPTICAL SENSORS



TAOS028A – MAY 2001

 Monolithic Silicon IC Containing

Photodiode, Operational Amplifier, and

PACKAGE

(FRONT VIEW)

Feedback Components

 Converts Light Intensity to a Voltage
 High Irradiance Responsivity, Typically 137

mV/(W/cm2) at p = 635 nm (TSL250R)

321

 Compact 3-Lead Clear Plastic Package
 Single Voltage Supply Operation

 Low Dark (Offset) Voltage....10mV Max

 Low Supply Current......1.1 mA Typical

 Wide Supply-Voltage Range.... 2.7 V to 5.5 V

 Replacements for TSL250, TSL251, and

TSL252

GND

Description

The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and
a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic
IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices
have improved amplifier offset-voltage stability and low power consumption and are supplied in a 3-lead clear
plastic sidelooker package with an integral lens

DD

OUTV

Functional Block Diagram

–
+

Terminal Functions

TERMINAL

NAME NO.

GND 1 Ground (substrate). All voltages are referenced to GND.
OUT 3 Output voltage
V

DD

2 Supply voltage

Voltage
Output

DESCRIPTION

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Texas Advanced Optoelectronic Solutions Inc.



800 Jupiter Road, Suite 205  Plano, TX 75074  [phone]

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Copyright  2001, TAOS Inc.

1

TSL250R, TSL251R, TSL252R

TEST

VOOut ut voltage

V

E

e

µW/cm

T

coefficient of

E

e

µW/cm

g

E

e

196 µW/cm

Irradiance

DD

y

LIGHTTOVOLTAGE OPTICAL SENSORS

TAOS028A – MAY 2001

Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, VDD (see Note 1) 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, TA –25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

–25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 240°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltages are with respect to GND.

2. Output may be shorted to supply.

Recommended Operating Conditions

MIN NOM MAX UNIT

Supply voltage, V
Operating free-air temperature, T

DD

A

2.7 5.5 V
0 70 °C

Electrical Characteristics at VDD = 5 V , TA = 25°C, λp = 635 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 3, 4, and 5)

TEST

PARAMETER

VDDark voltage Ee = 0 0 4 10 0 4 10 0 4 10 mV

Maximum output

V

OM

voltage

VOOutput voltage

p

emperature

coefficient of

α

vo

output voltage
(VO)

Irradiance

N

e

responsivity

I

Supply current

DD

NOTES: 3. Measurements are made with RL = 10 kΩ between output and ground.

4. Optical measurements are made using small-angle incident radiation from an LED optical source.

5. The input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 635 nm

6. The input irradiance Ee is supplied by a GaAlAs LED with peak wavelength λp = 880 nm

7. Irradiance responsivity is characterized over the range VO = 0.05 to 2.9 V. The best-fit straight line of Output Voltage VO versus
irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.

CONDITIONS

VDD = 4.5 V 3.0 3.3 3.0 3.3 3.0 3.3 V
Ee = 14.6 µW/cm

Ee = 38.5 µW/cm
Ee = 196 µW/cm

Ee = 14.6 µW/cm2,

= 14.6

TA = 0°C to 70°C
Ee = 38.5 µW/cm2,

= 38.5

TA = 0°C to 70°C
Ee = 196 µW/cm2,

=

TA = 0°C to 70°C

λp = 635 nm,

See Notes 5 and 7

λp = 880 nm,

See Notes 6 and 7
Ee = 14.6 µW/cm
Ee = 38.5 µW/cm
Ee = 196 µW/cm

2
2

2

,

,

,

2
2

2

TSL250R TSL251R TSL252R

MIN TYP MAX MIN TYP MAX MIN TYP MAX

1.5 2 2.5

1.5 2 2.5

1.5 2 2.5

1.6 mV/°C

0.08 %/°C

1.6 mV/°C

0.08 %/°C

1.6 mV/°C

0.08 %/°C

137 52 10.2

127 48 9.4

1.1 1.7

1.1 1.7

1.1 1.7

UNIT

V

mV/(µW/cm2)

mA

†

Copyright  2001, TAOS Inc.

2





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TSL250R, TSL251R, TSL252R

LIGHTTOVOLTAGE OPTICAL SENSORS

TAOS028A – MAY 2001

Dynamic Characteristics at TA = 25°C (see Figure 1)

PARAMETER TEST CONDITIONS

trOutput pulse rise time VDD = 5 V, λp = 635 nm 260 70 7 µs
tfOutput pulse fall time VDD = 5 V, λp = 635 nm 260 70 7 µs

VnOutput noise voltage

VDD = 5 V,
f = 1000 Hz

Ee = 0,

PARAMETER MEASUREMENT INFORMATION

V

DD

Pulse

Generator

(see Note A)

NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: λp = 635 nm,

LED

TSL25xR

TEST CIRCUIT

tr < 1 µs, tf < 1 µs.

B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF.

2

–
+

1

TSL250R TSL251R TSL252R

MIN TYP MAX MIN TYP MAX MIN TYP MAX

0.8 0.7 0.6 µV/√Hz

E

e

Input

90%

t

r

90%

10%

3

R

Output

L

Output

(see Note B)

10%

VOLTAGE WAVEFORM

UNIT

t

f

Figure 1. Switching Times

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Copyright  2001, TAOS Inc.

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