TAIWAN SEMICONDUCTOR TSM1N60L Technical data

TSM1N60L

600V N-Channel Power MOSFET

1/7 Version: A07

TO-252

TO-251

General Description

The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

● I

DSS

and V

DS(on)

specified at elevated temperature

Ordering Information

Part No.

Package

Packing

TSM1N60LCP RO

TO-252

2.5Kpcs / 13” Reel

TSM1N60LCH C5

TO-251

50pcs / Tube

Absolute Maximum Rating (Ta = 25

o

C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

ID 1 A

Pulsed Drain Current

IDM 4 A

Continuous Source Current (Diode Conduction)

a,b

IS 1 A

Single Pulse Drain to Source Avalanche Energy

(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)

EAS

20

mJ

Maximum Power Dissipation @Ta = 25 oC

PD

2.5

W

Operating Junction Temperature

TJ

+150

o

C

Operating Junction and Storage Temperature Range

TJ, T

STG

-55 to +150

o

C

PRODUCT SUMMARY

VDS (V)

R

DS(on)

(Ω)

ID (A)

600

12 @ V

GS

=10V

1

Pin Definition:

1. Gate

2. Drain

3. Source

Block Diagram

N-Channel MOSFET

TSM1N60L

600V N-Channel Power MOSFET

2/7 Version: A07

Thermal Performance

Parameter

Symbol

Limit

Unit

Lead Temperature (1/8” from case)

TL

10

S

Thermal Resistance - Junction to Ambient

RӨJA

62.5

o

C/W

Notes: Surface mounted on FR4 board t ≤ 10sec

Electrical Specifications (Ta = 25

o

C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, ID = 250uA

BV

DSS

600

--

--

V

Drain-Source On-State Resistance

V

GS

= 10V, ID = 0.6A

R

DS(ON)

--

10.5

12

Ω

Gate Threshold Voltage

V

DS

= VGS, ID = 250uA

V

GS(TH)

2.0

--

4.0

V

Zero Gate Voltage Drain Current

V

DS

= 600V, VGS = 0V

I

DSS

--

--

10

uA

Gate Body Leakage

VGS = ±20V, VDS = 0V

I

GSS

--

--

± 100

nA

Forward Transconductance

V

DS

≧50V, ID = 0.5A

gfs

--

10

--

S

Diode Forward Voltage

IS = 1A, VGS = 0V

VSD

--

--

1.5

V

Dynamic b

Total Gate Charge

Qg

--

8.5

14

Gate-Source Charge

Qgs

--

1.8

--

Gate-Drain Charge

V

DS

= 400V, ID = 1A,

V

GS

= 10V

Qgd

-- 4 --

nC

Input Capacitance

C

iss

--

210

--

Output Capacitance

C

oss

--

28

--

Reverse Transfer Capacitance

V

DS

= 25V, VGS = 0V,

f = 1.0MHz

C

rss

--

4.2

--

pF

Switching c

Turn-On Delay Time

t

d(on)

-- 8 --

Turn-On Rise Time

tr

--

21

--

Turn-Off Delay Time

t

d(off)

--

18

--

Turn-Off Fall Time

V

GS

= 10V, ID = 1A,

V

DS

= 300V, RG = 6Ω

tf

--

24

--

nS

Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

TSM1N60L

600V N-Channel Power MOSFET

3/7 Version: A07

Electrical Characteristics Curve (Ta = 25

o

C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage