TAIWAN SEMICONDUCTOR BZD27C3V6P, BZD27C3V9P, BZD27C4V3P, BZD27C4V7P, BZD27C5V1P Technical data
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BZD27C3V6P to BZD27C200P
Zener Diodes with Surge Current Specification
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Vishay Semiconductors
17249
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Weight: approx. 15 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation T
Non-repetitive peak pulse power
dissipation
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2)
TJ = 25 °C prior to surge
= 80 °C P
L
T
= 25 °C P
A
100 µs square pulse
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)
2)
2)
2)
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Thermal resistance junction to ambient air
Thermal resistance junction to lead R
Maximum junction temperature T
Storage temperature range T
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
1)
P
P
P
R
tot
tot
ZSM
RSM
RSM
thJA
thJL
j
S
2.3 W
1)
0.8
300 W
150 W
100 W
180 K/W
30 K/W
150 °C
- 55 to + 150 °C
W
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Document Number 85810
Rev. 1.8, 13-Apr-05
= 0.2 A V
F
F
1.2 V
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BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted)
Partnumber Marking
BZD27C3V6P D0 3.4 3.8 4 8 -0.14 -0.04 100 100 1
BZD27C3V9P D1 3.7 4.1 4 8 -0.14 -0.04 100 50 1
BZD27C4V3P D2 4 4.6 4 7 -0.12 -0.02 100 25 1
BZD27C4V7P D3 4.4 5 3 7 -0.1 0 100 10 1
BZD27C5V1P D4 4.8 5.4 3 6 -0.08 0.02 100 5 1
BZD27C5V6P D5 5.2 6 2 4 -0.04 0.04 100 10 2
BZD27C6V2P D6 5.8 6.6 2 3 -0.01 0.06 100 5 2
BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3
BZD27C7V5P D8 7 7.9 1 2 0 0.07 100 50 3
BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 4 8.2
BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 3 9.1
BZD27C13P E4 12.4 14.1 5 10 0.05 0.1 50 2 10
BZD27C15P E5 13.8 15.6 5 10 0.05 0.1 50 1 11
BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD27C30P F2 28 32 8 15 0.06 0.11 25 1 22
BZD27C33P F3 31 35 8 15 0.06 0.11 25 1 24
BZD27C36P F4 34 38 21 40 0.06 0.11 10 1 27
BZD27C39P F5 37 41 21 40 0.06 0.11 10 1 30
BZD27C43P F6 40 46 24 45 0.07 0.12 10 1 33
BZD27C47P F7 44 50 24 45 0.07 0.12 10 1 36
BZD27C51P F8 48 54 25 60 0.07 0.12 10 1 39
BZD27C56P F9 52 60 25 60 0.07 0.12 10 1 43
BZD27C62P G0 58 66 25 80 0.08 0.13 10 1 47
BZD27C68P G1 64 72 25 80 0.08 0.13 10 1 51
BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56
BZD27C82P G3 77 87 30 100 0.08 0.13 10 1 62
BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68
BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75
BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82
BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91
BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100
BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110
BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120
BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130
BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150
1)
Pulse test: tp ≤ 5 ms.
Code
Working Voltage
VZ @ I
min max typ max min max max
1)
Differential
Resistance
r
ZT
V Ω %/°C mA µA V
@ I
dif
Z
Temperature
Coefficient
αZ @ I
Z
Te s t
Current
I
ZT
Reverse Current at
Reverse Voltage
I
R
V
R
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2
Document Number 85810
Rev. 1.8, 13-Apr-05
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
When used as protection diodes (TJ = 25 °C unless otherwise noted)
Partnumber Rev.
Breakdown
Voltage
V
at
(BR)R
I
test
V mA %/°C V A µA V
min min max max max
BZD27C7V5P 7 100 0 0.07 11.3 13.3 1500 6.2
BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.8
BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5
BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2
BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 5 9.1
BZD27C12P 11.4 50 0.05 0.1 17 8.8 5 10
BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 5 11
BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 5 12
BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 5 13
BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 5 15
BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 5 16
BZD27C22P 20.8 25 0.06 0.11 31 4.8 5 18
BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 5 20
BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 5 22
BZD27C30P 28 25 0.06 0.11 42.2 3.6 5 24
BZD27C33P 31 25 0.06 0.11 46.2 3.2 5 27
BZD27C36P 34 10 0.06 0.11 50.1 3 5 30
BZD27C39P 37 10 0.06 0.11 54.1 2.8 5 33
BZD27C43P 40 10 0.07 0.12 60.7 2.5 5 36
BZD27C47P 44 10 0.07 0.12 65.5 2.3 5 39
BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43
BZD27C56P 52 10 0.07 0.12 78.6 1.9 5 47
BZD27C62P 58 10 0.08 0.13 86.5 1.7 5 51
BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56
BZD27C75P 70 10 0.08 0.13 103.5 1.5 5 62
BZD27C82P 77 10 0.08 0.13 114 1.3 5 68
BZD27C91P 85 5 0.09 0.13 126 1.2 5 75
BZD27C100P 94 5 0.09 0.13 139 1.1 5 82
BZD27C110P 104 5 0.09 0.13 139 0.72 5 91
BZD27C120P 114 5 0.09 0.13 152 0.65 5 100
BZD27C130P 124 5 0.09 0.13 169 0.59 5 110
BZD27C150P 138 5 0.09 0.13 187 0.53 5 120
BZD27C160P 153 5 0.09 0.13 205 0.48 5 130
BZD27C180P 168 5 0.09 0.13 229 0.43 5 150
BZD27C200P 188 5 0.09 0.13 254 0.39 5 160
1)
Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5.
Te st
Current
I
test
Temperature Coefficient Clamping Voltage Reverse Current at
Stand-Off Voltage
αZ @ I
test
V
C
at I
RSM
1)
I
R
at V
WM
Document Number 85810
Rev. 1.8, 13-Apr-05
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