TAIWAN SEMICONDUCTOR BZD27C3V6P, BZD27C3V9P, BZD27C4V3P, BZD27C4V7P, BZD27C5V1P Technical data

BZD27C3V6P to BZD27C200P

Zener Diodes with Surge Current Specification

Features

• Sillicon Planar Zener Diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering:
260 °C/10 sec. at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

e3

Vishay Semiconductors

17249

Mechanical Data

Case: JEDEC DO-219AB (SMF®) Plastic case
Weight: approx. 15 mg

Packaging codes/options:

GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Power dissipation T

Non-repetitive peak pulse power
dissipation

1)

Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

2)

TJ = 25 °C prior to surge

= 80 °C P

L

T

= 25 °C P

A

100 µs square pulse

10/1000 µs waveform (BZD27-

C7V5P to BZD27-C100P)

10/1000 µs waveform (BZD27-

C110P to BZD27-C200P)

2)

2)

2)

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Thermal resistance junction to ambient air

Thermal resistance junction to lead R

Maximum junction temperature T

Storage temperature range T

1)

Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

1)

P

P

P

R

tot

tot

ZSM

RSM

RSM

thJA

thJL

j

S

2.3 W

1)

0.8

300 W

150 W

100 W

180 K/W

30 K/W

150 °C

- 55 to + 150 °C

W

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Document Number 85810

Rev. 1.8, 13-Apr-05

= 0.2 A V

F

F

1.2 V

www.vishay.com

1

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Electrical Characteristics

When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted)

Partnumber Marking

BZD27C3V6P D0 3.4 3.8 4 8 -0.14 -0.04 100 100 1

BZD27C3V9P D1 3.7 4.1 4 8 -0.14 -0.04 100 50 1

BZD27C4V3P D2 4 4.6 4 7 -0.12 -0.02 100 25 1

BZD27C4V7P D3 4.4 5 3 7 -0.1 0 100 10 1

BZD27C5V1P D4 4.8 5.4 3 6 -0.08 0.02 100 5 1

BZD27C5V6P D5 5.2 6 2 4 -0.04 0.04 100 10 2

BZD27C6V2P D6 5.8 6.6 2 3 -0.01 0.06 100 5 2

BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3

BZD27C7V5P D8 7 7.9 1 2 0 0.07 100 50 3

BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3

BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5

BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5

BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 4 8.2

BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 3 9.1

BZD27C13P E4 12.4 14.1 5 10 0.05 0.1 50 2 10

BZD27C15P E5 13.8 15.6 5 10 0.05 0.1 50 1 11

BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12

BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13

BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15

BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16

BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18

BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20

BZD27C30P F2 28 32 8 15 0.06 0.11 25 1 22

BZD27C33P F3 31 35 8 15 0.06 0.11 25 1 24

BZD27C36P F4 34 38 21 40 0.06 0.11 10 1 27

BZD27C39P F5 37 41 21 40 0.06 0.11 10 1 30

BZD27C43P F6 40 46 24 45 0.07 0.12 10 1 33

BZD27C47P F7 44 50 24 45 0.07 0.12 10 1 36

BZD27C51P F8 48 54 25 60 0.07 0.12 10 1 39

BZD27C56P F9 52 60 25 60 0.07 0.12 10 1 43

BZD27C62P G0 58 66 25 80 0.08 0.13 10 1 47

BZD27C68P G1 64 72 25 80 0.08 0.13 10 1 51

BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56

BZD27C82P G3 77 87 30 100 0.08 0.13 10 1 62

BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68

BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75

BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82

BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91

BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100

BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110

BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120

BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130

BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150

1)

Pulse test: tp ≤ 5 ms.

Code

Working Voltage

VZ @ I

min max typ max min max max

1)

Differential

Resistance

r

ZT

V Ω %/°C mA µA V

@ I

dif

Z

Temperature

Coefficient

αZ @ I

Z

Te s t

Current

I

ZT

Reverse Current at

Reverse Voltage

I

R

V

R

www.vishay.com

2

Document Number 85810

Rev. 1.8, 13-Apr-05

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Electrical Characteristics

When used as protection diodes (TJ = 25 °C unless otherwise noted)

Partnumber Rev.

Breakdown

Voltage

V

at

(BR)R

I

test

V mA %/°C V A µA V

min min max max max

BZD27C7V5P 7 100 0 0.07 11.3 13.3 1500 6.2

BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.8

BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5

BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2

BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 5 9.1

BZD27C12P 11.4 50 0.05 0.1 17 8.8 5 10

BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 5 11

BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 5 12

BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 5 13

BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 5 15

BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 5 16

BZD27C22P 20.8 25 0.06 0.11 31 4.8 5 18

BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 5 20

BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 5 22

BZD27C30P 28 25 0.06 0.11 42.2 3.6 5 24

BZD27C33P 31 25 0.06 0.11 46.2 3.2 5 27

BZD27C36P 34 10 0.06 0.11 50.1 3 5 30

BZD27C39P 37 10 0.06 0.11 54.1 2.8 5 33

BZD27C43P 40 10 0.07 0.12 60.7 2.5 5 36

BZD27C47P 44 10 0.07 0.12 65.5 2.3 5 39

BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43

BZD27C56P 52 10 0.07 0.12 78.6 1.9 5 47

BZD27C62P 58 10 0.08 0.13 86.5 1.7 5 51

BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56

BZD27C75P 70 10 0.08 0.13 103.5 1.5 5 62

BZD27C82P 77 10 0.08 0.13 114 1.3 5 68

BZD27C91P 85 5 0.09 0.13 126 1.2 5 75

BZD27C100P 94 5 0.09 0.13 139 1.1 5 82

BZD27C110P 104 5 0.09 0.13 139 0.72 5 91

BZD27C120P 114 5 0.09 0.13 152 0.65 5 100

BZD27C130P 124 5 0.09 0.13 169 0.59 5 110

BZD27C150P 138 5 0.09 0.13 187 0.53 5 120

BZD27C160P 153 5 0.09 0.13 205 0.48 5 130

BZD27C180P 168 5 0.09 0.13 229 0.43 5 150

BZD27C200P 188 5 0.09 0.13 254 0.39 5 160

1)

Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5.

Te st

Current

I

test

Temperature Coefficient Clamping Voltage Reverse Current at

Stand-Off Voltage

αZ @ I

test

V

C

at I

RSM

1)

I

R

at V

WM

Document Number 85810

Rev. 1.8, 13-Apr-05

www.vishay.com

3

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

10.00

Typ. V

F

1.00

F

I – Forward Current ( A )

0.10

0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

17411

VF – Forward Voltage ( V )

Max. V

F

Figure 1. Forward Current vs. Forward Voltage

10000

C5V1P C6V8P C12P

1000

100

C27P

D

C – Typ. Junction Capacitance ( pF )

17412

C200P

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0
V

– Reverse Voltage (V)

R

C51P

C18P

160

140

120

100

80

60

40

20

0

RSM

P –Max. Pulse Power Dissipation ( W )

0 25 50 75 100 125 150 175 200

17414

V

– Zener Voltage ( V )

Znom

Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage

I

RSM

(%)

100

17415

90

50

10

t

1

t

2

t

1

t

2

=

10 µs

=

1000 µ s

t

Figure 2. Typ. Diode Capacitance vs. Reverse Voltage

3.0

tie point temperature

2.5

2.0

1.5

ambient temperature

1.0

tot

P –Power Dissipation ( W )

0.5

0.0
0 25 50 75 100 125 150

17413

T

– Ambient Temperature ( qC )

amb

Figure 3. Power Dissipation vs. Ambient Temperature

www.vishay.com

4

Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition

Document Number 85810

Rev. 1.8, 13-Apr-05

Package Dimensions in mm (Inches)

5

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

0.85 (0.033)

0.35 (0.014)

3.9 (0.152)

3.5 (0.137)

Detail

Z

enlarged

ISO Method E

0.10 max

5

0.99 (0.039)

0.97 (0.038)

1.9 (0.074)

1.7 (0.066)

0.16 (0.006)

Z

Cathode Band
Top View

1.2 (0.047)

0.8 (0.031)

2.9 (0.113)

2.7 (0.105)

Mounting Pad Layout

1.6 (0.062) 1.3 (0.051)

17247

Document Number 85810

Rev. 1.8, 13-Apr-05

1.4 (0.055)

www.vishay.com

5

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Blistertape for SMF

PS

18513

www.vishay.com

6

Document Number 85810

Rev. 1.8, 13-Apr-05

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 85810

Rev. 1.8, 13-Apr-05

www.vishay.com

7

This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.