Taiwan Memory Technology T15N1M16A-70CI, T15N1M16A-70C, T15N1M16A-70S, T15N1M16A-70SI, T15N1M16A-70JI Datasheet
...
TE
tm
SRAM
CH
T15N1M16A
FEATURES
• Fast access time : 55/70/100 ns
• Single +2.4 to 3.6V Power Supply
• Low power supply current :
- Operating :30mA(max)
- Standby : 10uA
• TTL compatible , Tri-state output
• Common I/O capability
• Automatic power-down when deselected
• Full static operation, no clock or refresh required
• Available packages type :
- 44-PIN SOJ (400 mil)
- 44-PIN TSOP-II (400 mil)
- 48-PIN CSP
64K X 16 LOW POWER
CMOS STATIC RAM
GENERAL DESCRIPTION
The T15N1M16A is a low power CMOS Static
RAM organized as 65,536 words by 16 bits. That
operates on a wide voltage range from +2.4 to 3.6V
power supply, Fabricated using high performance
CMOS technology, Inputs and three-state outputs
are TTL compatible and allow for direct interfacing
with common system bus structures. Data retention
is guaranteed at a power supply voltage as low as
1.5V.
BLOCK DIAGRAM
Operating temperature :
•
- 0 ~ +70 °C
- -40 ~ +85 °C
PART NUMBER EXAMPLES
PART NO.
T15N1M16A-70J
T15N1M16A-70S
T15N1M16A-70C
T15N1M16A-70JI
T15N1M16A-70SI
T15N1M16A-70CI
PACKAGE
CODE
J=SOJ
S=TSOP-II
C= CSP
J=SOJ
S=TSOP-II
C= CSP
Operating
Temperature
0 ~ +70 °C
-40 ~ +85 °C
Vcc
Vss
A0
A15
CE
WE
OE
LB
UB
.
.
DECODER
CONTROL
CIRCUIT
CORE
ARRAY
DATA I/O
I/O 1
.
.
.
I/O 1 6
TM Technology Inc. reserves the right P. 1 Publication Date: JUL . 2002
to change products or specifications without notice. Revision: A
TE
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
CH
T15N1M16A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SOJ
&
TSOP-II
tm
PIN CONFIGURATIONS
48-Ball CSP TOP VIEW (Ball Down)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
654321
A
B
C
D
E
F
G
H
LB OE
I/O 9
I/O 10
VSS
VCC
I/O 15
I/O 16
NC A8
UB
I/O 11
I/O 12
I/O 13
I/O 14
NC
A0 A1 A2
A5
NC
NC
A14
A12 A13
A9 A10
A6
A7
NC
A15
CEA4A3
I/O 2
I/O 4
I/O 5
I/O 6
WE
A11 NC
NC
I/O 1
I/O 3
VCC
VSS
I/O 7
I/O 8
PIN DESCRIPTIONS
SYMBOL DESCRIPTIONS SYMBOL DESCRIPTIONS
A0 ~ A15 Address inputs
I/O1~I/O16 Data inputs/outputs
LB
UB
Lower byte (I/O 1~8)
Upper byte (I/O 9~16)
CE
WE
OE
TM Technology Inc. reserves the right P. 2 Publication Date: JUL . 2002
to change products or specifications without notice. Revision: A
Chip enable VCC Power supply
Write enable input VSS Ground
Output enable input
NC No connection
TE
tm
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to VSS VR -0.5 +4.6 V V
Power Dissipation
Storage Temperature
Temperature Under Bias
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
TRUTH TABLE
CH
T15N1M16A
PARAMETER SYM MIN. MAX. UNIT
P
D
T
STG
I
BIAS
the device. This is a stress rating only and function operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
- 0.7 W
-55 +150 °C
0 / -40 +70 / +85 °C
CE
H X* X* X* X* High-Z High-Z Deselected
X* X* X* H H High-Z High-Z Deselected
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High
OE WE
L H H L X* High-Z High-Z Output Disabled Active
L H H X* L High-Z High-Z Output Disabled Active
L L H L H Data Out High-Z Lower Byte Read Active
L L H H L High-Z Data Out Upper Byte Read Active
L L H L L Data Out Data Out Word Read Active
L X* L L H Data In High-Z Lower Byte Write Active
L X* L H L High-Z Data In Upper Byte Write Active
L X* L L L Data In Data In Word Write Active
LB
UB
I/O 1~8 I/O 9~16 MODE Power
Standby
Standby
RECOMMENDED OPERATING CONDITIONS
(Ta = 0°C to +70°C / -40 °C ~ +85 °C *)
PARAMETER SYM MIN TYP MAX UNIT
Supply Voltage
Input Voltage
V
*
min = -1.0V for pulse width less than
IL
Vcc 2.4 - 3.6 V
V
V
V
SS
IH
IL
0.0 0.0 0.0 V
2.0 - Vcc+0.3 V
-0.5* - 0.4 V
/2
t
RC
TM Technology Inc. reserves the right P. 3 Publication Date: JUL . 2002
to change products or specifications without notice. Revision: A
TE
tm
OPERATING CHARACTERISTICS
CH
T15N1M16A
(Vcc =
PARAMETER SYM. TEST CONDITIONS
Output Leakage
Operating Power
+2.4 to 3.6V , V
Input Leakage
Current
Current
Supply Current
ILI
ILO
ICC
= 0V, Ta = 0°C to +70°C / -40°C to +85 °C)
SS
Vcc = Max,
VIN = V
CE
or
or
V
IO
CE
VIN
I
OUT
to Vcc
SS
= VIH
= VIH
OE
= VIL
WE
= V
to Vcc
SS
= VIL,
= VIH or V
=0mA
IL,
Cycle time=min,
Standby Power
Supply Current
(TTL Level)
Standby Power
Supply Current
(CMOS Level)
Output Low
Voltage
Output High
Voltage
V
V
100% duty
CE
LB
I
SB
other input= VIL or
V
IH
CE
LB
I
Vcc-0.2V,
SB1
V
IN
V
IN
I
= 2.1mA
OL
OL
I
= -1 mA
OH
OH
V
=
or
IH
=UB=
≥ Vcc-0.2V or
=UB ≥
V
IH
≤ 0.2V or
≥ Vcc-0.2V
-55 -70 -100
Min Max Min Max Min Min
-1 1 -1 1 -1 1 uA
-1 1 -1 1 -1 1 uA
- 30 - 25 - 20 mA
- 0.3 - 0.3 - 0.3 mA
- 10 - 10 - 10 uA
- 0.4 - 0.4 - 0.4 V
2.2 - 2.2 - 2.2 - V
UNIT
TM Technology Inc. reserves the right P. 4 Publication Date: JUL . 2002
to change products or specifications without notice. Revision: A
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