Taiwan Memory Technology T14M256A-8J, T14M256A-8P Datasheet
TE
C
H
tm
VSS→
Vcc
→
CS
WE
OE
T14M256A
SRAM
FEATURES
•
High speed access time: 7/ 8/10/12/15ns(max.)
• Low power consumption : Active 300 mW (typ.)
•
Single + 5 power supply
•
Fully static operation – No clock or refreshing
required
•
All inputs and outputs directly TTL compatible
•
Comm on I/O capability
•
Available packages : 28-pin 300 mil SOJ and
TSOP-I (forward type ).
•
Output enable (OE) available for very fast
access
•
Mix-mode Outputs
32K X 8 HIGH SPEED
CMOS STATIC RAM
GENERAL DESCRIPTION
The T14M256A is a high speed, low power
CMOS static RAM organized as 32,768 x 8 bits
that operates on a single 5-volt power supply.
This device is packaged in a standard 28-pin 300
mil SOJ or TSOP -I forward.
BLOCK DIAGRAM
A 0
.
.
.
A 14
DECODER
CORE
ARRAY
PIN CONFIGURATION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
TSOP-I
Vcc
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
CS
OE
WE
CONTROL
DATA I/O
I/O 1
.
.
.
I/O 8
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A14 Address Inputs
I/O1 - I/O8 Data Inputs/Outputs
Vcc Power Supply
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Vss Ground
PART NUMBER EXAMPLES
PACKAGE SPEED
T14M256A-8J SOJ 8ns
T14M256A-8P TSOP-I 8ns
Chip Select Inputs
Write Enable
Output Enable
Taiwan Memory Technology, Inc. reserves the right P. 1 Publication Date: SEP. 2001
to change products or specifications without notice. Revision: G
TE
C
H
tm
V
IL
IH
A
IL
IH
I
I
SB1
MAX.
I
LI
LO
CS
IH
V
IH
V
IL
OL
OL
OH
OH
2.4
CS
V
IL
SB
CS
IH
I
SB1
CS
cc
T14M256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER RATING UNIT
Supply Voltage to Vss Potential -0.5 to + 6 V
Inputs to Vss Potential -0.5 to Vcc +0.5 V
Power Dissipation 1.0 W
Storage Temperature -60 to +150
RECOMMENDED OPERATING CONDITIONS
PARAMETER SYM MIN TYP MAX UNIT
Supply Voltage Vcc Typ-5% 5 Typ+ 5% V
V
T
-0.3 - 0.8 V
2.2 - Vcc+0.3 V
0 - 70 °C
V
(max.) = +7.0V for pulse width ≤ 20ns.
Input Voltage, low
Input Voltage, high
Ambient Temperature
Note:
V
(min.) = -2.0V for pulse width ≤ 20ns,
TRUTH TABLE
°
C
CS
H X X Not Selected High-Z
OE
WE
MODE I/O1- I/O8 Vcc
SB,
L H H Output Disable High -Z Icc
L L H Read Data Out Icc
L X L Write Data In Icc
OPERATING CHARACTERISTICS
(Vcc = 5V± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER SYM. TEST CONDITIONS MIN. TYP.
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Vin=Vss to Vcc -10 - +10 uA
I
V
V
Icc
V
I/O
or OE=
I
I
Cycle = MIN.
Duty = 100%
=Vss to Vcc ,
or WE =
= + 8.0mA
= - 4.0mA
=
, I/O=0mA
V
=
-10 - - 110 mA
-10 - +10 uA
- - 0.4 V
- - V
-7 - - 125 mA
-8 - - 120 mA
-12 - - 100 mA
-15 - - 90 mA
I
Standby Power
Supply Current
V
=
, Cycle=MIN, Duty=100%
V
≥
-0.2V
- - 15 mA
- - 2 mA
UNIT
Note: Typical characte ristics are at Vcc = 5V, Ta = 25°C
Taiwan Memory Technology, Inc. reserves the right P. 2 Publication Date: SEP. 2001
to change products or specifications without notice. Revision: G
TE
C
H
tm
IN
I/O
OUT
C
L
I
OH
I
OL
T14M256A
CAPACITANCE
(Vcc = 5V, Ta = 25°C, f = 1 MHz)
PARAMETER SYMBOL CONDITION MAX. UNIT
C
Input Capacitance
Input/ Output Capacitance
Note: These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 3 ns
Input and Output Timing Reference Level 1.5V
Output Load
AC TEST LOADS AND WAVEFORM
VIN = 0V
C
V
=30pF,
= 0V
/
= -4mA/8mA
6 pF
8 pF
DQ
5V
OUTPUT
Z0 = 50 ohm
Fig.1
Fig.2
Vt =1.73V
R1 480 ohm
30pF
Including
Jig and
Scope
50
ohm
3.0V
0 V
3ns
30 pF
DQ
Z0 = 50
ohm
Fig.3
5V
OUTPUT
R2
255 ohm
(For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW )
90%
10% 10%
Fig.5
90%
3ns
R1 480 ohm
5pF
Including
Jig and
Scope
50
ohm
Vt =1.73V
Fig.4
5 pF
R2
255
ohm
Taiwan Memory Technology, Inc. reserves the right P. 3 Publication Date: SEP. 2001
to change products or specifications without notice. Revision: G
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