Taitron MMBT3906 Schematic [ru]

SMD General Purpose

Transistor (PNP)

SMD General Purpose Transistor (PNP)

Features

• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications

• RoHS compliance

Mechanical Data

Case:

Terminals:

Weight:

SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208

0.008 gram

MMBT3906

SOT-23

Maximum Ratings

Symbol Description MMBT3906 Unit Conditions

VCEO
VCBO
VEBO

IC

PD

RθJA

PD

RθJA

TJ

TSTG

Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)

2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

Collector-Emitter Voltage -40 V
Collector-Base Voltage -40 V
Emitter-Base Voltage -5.0 V
Collector Current -200 mA

Total Device Power Dissipation(Note 1)

Thermal Resistance, Junction to Ambient

Total Device Power Dissipation, Alumina Substrate
(Note 2)

Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range

(T

=25ºC unless noted otherwise)

Ambient

225 mW TA=25 ˚C

1.8 mW/°C Derate above 25 ˚C
556 °C /W
300 mW TA=25 ˚C

2.4 mW/°C Derate above 25 ˚C
417 °C /W

-55 to +150 °C

-55 to +150 °C

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Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060

Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415

Rev. B/CZ

Page 1 of 9

SMD General Purpose Transistor (PNP)

MMBT3906

Electrical Characteristics (T

=25ºC unless noted otherwise)

Ambient

Off Characteristics

Symbol Description Min. Max. Unit Conditions

V(BR)CEO

V(BR)CBO
V(BR)EBO

IBL

ICEX

Collector-Emitter Breakdown Voltage
(Pulse width ≤300µs, Duty Cycle ≤2.0%)

Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage -5.0 - V
Base Cut-off Current - -50 nA
Collector Cut-off Current - -50 nA

-40 - V

-40 - V

IC=-1mA, IB=0

IC=-10µA, IE=0

IE=-10µA, IC=0
VEB=-3V, VCE=-30V
VEB=-3V, VCE=-30V

On Characteristics

Symbol Description Min. Max. Unit Conditions

hFE

VCE(sat)

VBE(sat)

D.C. Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

60 ­80 -

100 300

60 ­30 -

- -0.25

- -0.4

-0.65 -0.85

- -0.95

V

V

VCE=-1V, IC=-0.1mA

VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA

VCE=-1V, IC=-100mA

IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA

Small-signal Characteristics

Symbol Description Min. Max. Unit Conditions

fT

COBO

CIBO

hie

hre

hfe

hoe

NF

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Current Gain-Bandwidth Product 250 - MHz

Output Capacitance

Input Capacitance

Input Impedance 2.0 12 kohms

Voltage Feedback Ratio 0.1 10 x 10-4

Small-Signal Current Gain 100 400 -

Output Admittance 3.0 60 UMHOS

Noise Figure - 4.0 dB

- 4.5 pF

- 10 pF

VCE=-20V, IC=-10mA,

f=100MHz

VCB=-5V, f=1.0MHz,

IE=0

VEB=-0.5V, f=1.0MHz,

IC=0

VCE=-10V, IC=-1mA,

f=1kHz

VCE=-10V, IC=-1mA,

f=1kHz

VCE=10V, IC=-1mA,

f=1kHz

VCE=-10V, IC=-1mA,

f=1kHz

VCE=-5V, IC=-100µA,

Rs=1.0kohms,

f=1kHz

Rev. B/CZ

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SMD General Purpose Transistor (PNP)

MMBT3906

Switching Characteristics

Symbol Description Min. Max. Unit Conditions

td

tr
ts
tf

Delay Time
Rise Time
Storage Time
Fall Time

- 35

- 35

- 225

- 75

ns

Equivalent Test Circuit

Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time

Total Shunt Capacitance of test jig and connectors

VCC=-3V, VBE=0.5V
IC=-10mA, IB1=-1mA

VCC=-3V, IC=-10mA,

IB1= IB2=-1mA

Rev. B/CZ

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