Taitron MMBT3904 Schematic [ru]
Rev. C/CZ
MMBT3904
Page 1 of 9
SMD General Purpose
Transistor (NPN)
Case:
SOT-23, Plastic Package
Terminals:
Solderable per MIL-STD-202G, Method 208
Weight:
0.008 gram
Symbol
Description
MMBT3904
Unit
Conditions
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
200
mA
PD
Total Device Power Dissipation(Note 1)
225
mW
TA=25 ˚C
1.8
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
556
°C /W
PD
Total Device Power Dissipation, Alumina Substrate
(Note 2)
300
mW
TA=25 ˚C
2.4
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
417
°C /W
TJ
Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
SOT-23
SMD General Purpose Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
RoHS compliance
Mechanical Data
Maximum Ratings (T
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
=25ºC unless noted otherwise)
Ambient
Rev. C/CZ
MMBT3904
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com
Page 2 of 9
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage
(Pulse width ≤300µs, Duty Cycle ≤2.0%)
40 - V
IC=1mA, IB=0
V(BR)CBO
Collector-Base Breakdown Voltage
60 - V
IC=10µA, IE=0
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0 - V
IE=10µA, IC=0
IBL
Base Cut-off Current
-
50
nA
VEB=3V, VCE=30V
ICEX
Collector Cut-off Current
-
50
nA
VEB=3V, VCE=30V
Symbol
Description
Min.
Max.
Unit
Conditions
hFE
D.C. Current Gain
40
-
VCE=1V, IC=0.1mA
70
-
VCE=1V, IC=1mA
100
300
VCE=1V, IC=10mA
60
-
VCE=1V, IC=50mA
30
-
VCE=1V, IC=100mA
VCE(sat)
Collector-Emitter Saturation Voltage
-
0.2
V
IC=10mA, IB=1mA
-
0.3
IC=50mA, IB=5mA
VBE(sat)
Base-Emitter Saturation Voltage
0.65
0.85
V
IC=10mA, IB=1mA
-
0.95
IC=50mA, IB=5mA
Symbol
Description
Min.
Max.
Unit
Conditions
fT
Current Gain-Bandwidth Product
300 - MHz
VCE=20V, IC=10mA,
f=100MHz
COBO
Output Capacitance
-
4.0
pF
VCB=5V, f=1.0MHz,
IE=0
CIBO
Input Capacitance
-
8.0
pF
VEB=0.5V, f=1.0MHz,
IC=0
hie
Input Impedance
1.0
10
kohms
VCE=10V, IC=1mA,
f=1kHz
hre
Voltage Feedback Ratio
0.5
8.0
x 10-4
VCE=10V, IC=1mA,
f=1kHz
hfe
Small-Signal Current Gain
100
400
-
VCE=10V, IC=1mA,
f=1kHz
hoe
Output Admittance
1.0
40
UMHOS
VCE=10V, IC=1mA,
f=1kHz
NF
Noise Figure
-
5.0
dB
VCE=5V, IC=100µA,
Rs=1.0kohms, f=1kHz
Electrical Characteristics (T
Off Characteristics
On Characteristics
=25ºC unless noted otherwise)
Ambient
Small-signal Characteristics
Rev. C/CZ
MMBT3904
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com
Page 3 of 9
Fig.1- Delay and Rise Time
Fig.2- Storage and Fall Time
Symbol
Description
Min.
Max.
Unit
Conditions
td
Delay Time
-
35
ns
VCC=3V, VBE=-0.5V
IC=10mA, IB1=1mA
tr
Rise Time
-
35
ts
Storage Time
-
200
VCC=3V, IC=10mA,
IB1= IB2=1mA
tf
Fall Time
-
50
Switching Characteristics
Equivalent Test Circuit
Total Shunt Capacitance of test jig and connectors
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