Small Signal MOSFET (P-Channel)
Small Signal MOSFET (P-Channel)
Features
• Low on-resistance: 10Ω
• Low input-capacitance: 30pF
• Low output capacitance: 10pF
• Low threshole: 2.0V
• Fast switching speed: 2.5ns
• RoHS Compliance
Application
• DC to DC Converter
• Cellular & PCMCIA Card
• Cordless Telephone
• Power Management in Portable and Battery etc.
BSS84
SOT-23
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings
Symbol Description BSS84 Unit Conditions
VDSS
VGSS
ID
IDM
PD
RthJA
TJ, TSTG
Drain-Source Voltage 50 V
Gate-Source Voltage ±20 V
Drain Current Continuous 130 mA T
Drain Current Pulsed 520 mA tp≤10µS
Power Dissipation 225 mW T
Max. Thermal Resistance, Junction to Ambient 556 ° C/W
Operation Junction and Storage Temperature Range
(T
=25ºC unless noted otherwise)
Ambient
A=25 ˚C
A=25 ˚C
-55 to +150 ° C
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Rev. A/AH
Page 1 of 7
)
Small Signal MOSFET (P-Channel
BSS84
Electrical Characteristics (T
=25ºC unless noted otherwise)
Ambient
Static Characteristics (Note 1)
Symbol Description Min. Typ. Max. Unit Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
g
FS
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage 0.8 - 2.0 V VDS=VGS, ID=1mA
Gate-Source Leakage Current - - ±60 μA V
Zero Gate Voltage Drain Current
Drain-Source ON Resistance - 5.0 10 Ω V
Forward Transconductance 50 - - mS V
50 - - V V
- - 0.1 μA VDS=25V, VGS=0V
- - 15 μA V
GS=0V, ID=250µA
DS=0V, VGS=±20V
DS=50V, VGS=0V
GS=5V, ID=100mA
DS=25V, ID=100mA, f=1KHz
Dynamic Characteristics
Symbol Description Min. Typ. Max. Unit Conditions
Ciss
Crss
Coss
Input Capacitance - 30 -
Reverse Transfer Capacitance - 5.0 -
Output Capacitance - 10 -
DS=5V, VGS=0V,
pF
V
f=1MHz
Switching Characteristics
Symbol Description Min. Typ. Max. Unit Conditions
ton
tr
toff
tf
QT
Turn-On Time - 25 -
Rise-Time - 1.0 -
Turn-Off Time - 16 -
Fall-Time - 8.0 -
Gate Charge - 6000 - PC
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(Note 2)
DD=-15V, RL=50Ω,
nS
V
I
Page 2 of 7
D=-2.5A
Rev. A/AH
)
Small Signal MOSFET (P-Channel
BSS84
Source-Drain Diode Characteristics
Symbol Description Min. Typ. Max. Unit Conditions
IS
ISM
Continuous Drain-Source Diode Forward
Current
Pulsed Drain-Source Diode Forward Current - - 0.52 A
- - 0.13 A
VSD
Source-Drain Forward Voltage (Note 2) - 2.5 - V
Note: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Switching Time is Essentially Independent of Operation Temperature.
Typical Characteristics Curves
Drain Current ID (A)
Fig.1- Transfer Characteristics
Gate-Source Voltage
VGS (V)
Fig.2- On Region Characteristics
ID (A)
Drain Current
Drain-Source Voltage
VDS (V)
Rev. A/AH
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Page 3 of 7
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